CN102347417B - 发射辐射的器件 - Google Patents

发射辐射的器件 Download PDF

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Publication number
CN102347417B
CN102347417B CN201110340389.0A CN201110340389A CN102347417B CN 102347417 B CN102347417 B CN 102347417B CN 201110340389 A CN201110340389 A CN 201110340389A CN 102347417 B CN102347417 B CN 102347417B
Authority
CN
China
Prior art keywords
radiation
layer
electromagnetic radiation
emitting device
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110340389.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN102347417A (zh
Inventor
斯特凡·格勒奇
扬·马费尔德
约尔格·埃里希·佐尔格
莫里茨·恩格尔
斯特芬·科勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102347417A publication Critical patent/CN102347417A/zh
Application granted granted Critical
Publication of CN102347417B publication Critical patent/CN102347417B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN201110340389.0A 2007-09-21 2008-08-28 发射辐射的器件 Expired - Fee Related CN102347417B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007045087.9 2007-09-21
DE102007045087 2007-09-21
DE102008005344.9 2008-01-21
DE102008005344A DE102008005344A1 (de) 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008801079846A Division CN101803048B (zh) 2007-09-21 2008-08-28 发射辐射的器件

Publications (2)

Publication Number Publication Date
CN102347417A CN102347417A (zh) 2012-02-08
CN102347417B true CN102347417B (zh) 2014-10-01

Family

ID=40384494

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110340389.0A Expired - Fee Related CN102347417B (zh) 2007-09-21 2008-08-28 发射辐射的器件
CN2008801079846A Expired - Fee Related CN101803048B (zh) 2007-09-21 2008-08-28 发射辐射的器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2008801079846A Expired - Fee Related CN101803048B (zh) 2007-09-21 2008-08-28 发射辐射的器件

Country Status (8)

Country Link
US (2) US8373186B2 (enExample)
EP (1) EP2198464B1 (enExample)
JP (1) JP5362727B2 (enExample)
KR (1) KR101460388B1 (enExample)
CN (2) CN102347417B (enExample)
DE (1) DE102008005344A1 (enExample)
TW (2) TW200915624A (enExample)
WO (1) WO2009036731A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100788A1 (de) * 2012-01-31 2013-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Konverterelement
CN103633223B (zh) * 2013-11-13 2016-08-17 苏州热驰光电科技有限公司 高光透玻璃基板led照明装置及其制备方法
CA2967190C (en) 2014-11-18 2022-09-20 Industries Yifei Wang Inc. Led module, methods of manufacturing same and luminaire integrating same
WO2020229043A2 (de) * 2019-05-14 2020-11-19 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, pixel, displayanordnung und verfahren
KR20240133228A (ko) * 2023-02-28 2024-09-04 삼성전자주식회사 반도체 발광 소자
CN116344707A (zh) * 2023-03-20 2023-06-27 华灿光电（浙江）有限公司 改善发光亮度的发光二极管及其制备方法
CN120214069B (zh) * 2025-05-23 2025-08-22 上海聚跃检测技术有限公司 一种半导体晶圆表面的芯片检测方法及系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1592974A (zh) * 2000-08-08 2005-03-09 奥斯兰姆奥普托半导体有限责任公司 用于光电子学的半导体芯片及其制造方法
CN1934477A (zh) * 2004-03-16 2007-03-21 皇家飞利浦电子股份有限公司 具有非相干固态光源的高亮度照明器件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
US6878563B2 (en) * 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
KR20110025236A (ko) 2002-12-25 2011-03-09 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 발광소자장치, 수광소자장치, 광학장치, 플루오르화물 결정, 플루오르화물 결정의 제조방법 및 도가니
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
FR2861853B1 (fr) 2003-10-30 2006-02-24 Soitec Silicon On Insulator Substrat avec adaptation d'indice
JP2005157313A (ja) * 2003-10-30 2005-06-16 Arisawa Mfg Co Ltd リアプロジェクションディスプレイ用スクリーン
JP2006093602A (ja) 2004-09-27 2006-04-06 Toyoda Gosei Co Ltd 発光素子
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
US8471456B2 (en) * 2004-10-12 2013-06-25 Koninklijke Philips Electronics N.V. Electroluminescent light source with improved color rendering
TWI239671B (en) * 2004-12-30 2005-09-11 Ind Tech Res Inst LED applied with omnidirectional reflector
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP2006261540A (ja) 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス
JP4996101B2 (ja) * 2006-02-02 2012-08-08 新光電気工業株式会社 半導体装置及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1592974A (zh) * 2000-08-08 2005-03-09 奥斯兰姆奥普托半导体有限责任公司 用于光电子学的半导体芯片及其制造方法
CN1934477A (zh) * 2004-03-16 2007-03-21 皇家飞利浦电子股份有限公司 具有非相干固态光源的高亮度照明器件

Also Published As

Publication number Publication date
US20130146919A1 (en) 2013-06-13
TW200915624A (en) 2009-04-01
CN101803048B (zh) 2011-12-21
US8373186B2 (en) 2013-02-12
DE102008005344A1 (de) 2009-04-02
JP2010539715A (ja) 2010-12-16
US20100207148A1 (en) 2010-08-19
JP5362727B2 (ja) 2013-12-11
KR20100055357A (ko) 2010-05-26
EP2198464A2 (de) 2010-06-23
CN101803048A (zh) 2010-08-11
TW201242078A (en) 2012-10-16
WO2009036731A3 (de) 2009-05-28
TWI473297B (zh) 2015-02-11
US8963181B2 (en) 2015-02-24
KR101460388B1 (ko) 2014-11-10
EP2198464B1 (de) 2016-11-16
WO2009036731A2 (de) 2009-03-26
CN102347417A (zh) 2012-02-08

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141001

Termination date: 20190828