TWI473297B - 輻射發射組件 - Google Patents

輻射發射組件 Download PDF

Info

Publication number
TWI473297B
TWI473297B TW101124292A TW101124292A TWI473297B TW I473297 B TWI473297 B TW I473297B TW 101124292 A TW101124292 A TW 101124292A TW 101124292 A TW101124292 A TW 101124292A TW I473297 B TWI473297 B TW I473297B
Authority
TW
Taiwan
Prior art keywords
layer
radiation
radiation emitting
electromagnetic
region
Prior art date
Application number
TW101124292A
Other languages
English (en)
Chinese (zh)
Other versions
TW201242078A (en
Inventor
史帝芬 葛洛奇
珍 瑪弗德
傑瑞 休羅傑
莫里茲 安格爾
史蒂芬 克樂
Original Assignee
歐司朗光電半導體有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐司朗光電半導體有限公司 filed Critical 歐司朗光電半導體有限公司
Publication of TW201242078A publication Critical patent/TW201242078A/zh
Application granted granted Critical
Publication of TWI473297B publication Critical patent/TWI473297B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW101124292A 2007-09-21 2008-08-18 輻射發射組件 TWI473297B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007045087 2007-09-21
DE102008005344A DE102008005344A1 (de) 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement

Publications (2)

Publication Number Publication Date
TW201242078A TW201242078A (en) 2012-10-16
TWI473297B true TWI473297B (zh) 2015-02-11

Family

ID=40384494

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097131452A TW200915624A (en) 2007-09-21 2008-08-18 Radiation-emitting component
TW101124292A TWI473297B (zh) 2007-09-21 2008-08-18 輻射發射組件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW097131452A TW200915624A (en) 2007-09-21 2008-08-18 Radiation-emitting component

Country Status (8)

Country Link
US (2) US8373186B2 (enExample)
EP (1) EP2198464B1 (enExample)
JP (1) JP5362727B2 (enExample)
KR (1) KR101460388B1 (enExample)
CN (2) CN101803048B (enExample)
DE (1) DE102008005344A1 (enExample)
TW (2) TW200915624A (enExample)
WO (1) WO2009036731A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100788A1 (de) * 2012-01-31 2013-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Konverterelement
CN103633223B (zh) * 2013-11-13 2016-08-17 苏州热驰光电科技有限公司 高光透玻璃基板led照明装置及其制备方法
WO2016079658A1 (en) * 2014-11-18 2016-05-26 Industries Yifei Wang Inc. Led module, methods of manufacturing same and luminaire integrating same
US20220223771A1 (en) * 2019-05-14 2022-07-14 Osram Opto Semiconductors Gmbh Optoelectronic component, pixels, display assembly, and method
KR20240133228A (ko) * 2023-02-28 2024-09-04 삼성전자주식회사 반도체 발광 소자
CN116344707A (zh) * 2023-03-20 2023-06-27 华灿光电（浙江）有限公司 改善发光亮度的发光二极管及其制备方法
CN120214069B (zh) * 2025-05-23 2025-08-22 上海聚跃检测技术有限公司 一种半导体晶圆表面的芯片检测方法及系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352085A (ja) * 2005-03-14 2006-12-28 Philips Lumileds Lightng Co Llc 波長変換型半導体発光デバイス
US20070194712A1 (en) * 2006-02-02 2007-08-23 Shinko Electric Industries Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
US6878563B2 (en) * 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
WO2004059750A1 (ja) 2002-12-25 2004-07-15 Japan Science And Technology Agency 発光素子装置、受光素子装置、光学装置、フッ化物結晶、フッ化物結晶の製造方法、およびルツボ
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
FR2861853B1 (fr) 2003-10-30 2006-02-24 Soitec Silicon On Insulator Substrat avec adaptation d'indice
JP2005157313A (ja) * 2003-10-30 2005-06-16 Arisawa Mfg Co Ltd リアプロジェクションディスプレイ用スクリーン
TW200602585A (en) * 2004-03-16 2006-01-16 Koninkl Philips Electronics Nv High brightness illumination device with incoherent solid state light source
JP2006093602A (ja) 2004-09-27 2006-04-06 Toyoda Gosei Co Ltd 発光素子
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht
EP1803175B1 (en) * 2004-10-12 2010-09-29 Philips Intellectual Property & Standards GmbH Electroluminescent light source
TWI239671B (en) * 2004-12-30 2005-09-11 Ind Tech Res Inst LED applied with omnidirectional reflector
JP2006261540A (ja) * 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352085A (ja) * 2005-03-14 2006-12-28 Philips Lumileds Lightng Co Llc 波長変換型半導体発光デバイス
US20070194712A1 (en) * 2006-02-02 2007-08-23 Shinko Electric Industries Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
US20130146919A1 (en) 2013-06-13
US8373186B2 (en) 2013-02-12
US20100207148A1 (en) 2010-08-19
JP2010539715A (ja) 2010-12-16
JP5362727B2 (ja) 2013-12-11
DE102008005344A1 (de) 2009-04-02
TW201242078A (en) 2012-10-16
US8963181B2 (en) 2015-02-24
WO2009036731A3 (de) 2009-05-28
WO2009036731A2 (de) 2009-03-26
KR20100055357A (ko) 2010-05-26
TW200915624A (en) 2009-04-01
CN102347417A (zh) 2012-02-08
CN101803048A (zh) 2010-08-11
KR101460388B1 (ko) 2014-11-10
CN101803048B (zh) 2011-12-21
EP2198464A2 (de) 2010-06-23
CN102347417B (zh) 2014-10-01
EP2198464B1 (de) 2016-11-16

Similar Documents

Publication Publication Date Title
JP7414886B2 (ja) 発光素子及びその製造方法
TWI473297B (zh) 輻射發射組件
TWI415294B (zh) 發光二極體晶片
EP2930801B1 (en) Laser light source device
JP6920995B2 (ja) 向上した色均一性を有する光源アッセンブリ
CN103988502B (zh) 具有荧光材料元件的照明单元
US20120286701A1 (en) Light Emitting Diode Light Source With Layered Phosphor Conversion Coating
KR20100118149A (ko) 발광 다이오드 장치
JP2005210132A (ja) 放射光の再循環により輝度を増大させる光学システムを有するｌｅｄ
JP7048873B2 (ja) 発光装置及び発光装置の製造方法
US20150131259A1 (en) Hybrid light bulbs using combinations of remote phosphor leds and direct emitting leds
US20200403124A1 (en) Light-emitting device having a dielectric multilayer film arranged on the side surface of the light-emitting element
KR20130112577A (ko) 발광 다이오드 조명 장치
JP6644233B2 (ja) 発光装置
US11360374B2 (en) Light source device and electronic apparatus
WO2022004663A1 (ja) 発光装置
JP7755522B2 (ja) 半導体発光装置およびそれを備えた車両用灯具
KR101848842B1 (ko) 레이저 조명 장치
KR20190117308A (ko) 발광소자 패키지
CN117790488A (zh) 一种高单色性的五色cob光源
KR20160116998A (ko) 발광패키지 및 이를 포함하는 차량용 램프
CN119546002A (zh) 一种发光装置及显示装置
KR20160129448A (ko) 레이저 조명 장치

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees