JP2010539715A5 - - Google Patents

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Publication number
JP2010539715A5
JP2010539715A5 JP2010525192A JP2010525192A JP2010539715A5 JP 2010539715 A5 JP2010539715 A5 JP 2010539715A5 JP 2010525192 A JP2010525192 A JP 2010525192A JP 2010525192 A JP2010525192 A JP 2010525192A JP 2010539715 A5 JP2010539715 A5 JP 2010539715A5
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JP
Japan
Prior art keywords
radiation
layer
emitting component
embodied
layers
Prior art date
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Granted
Application number
JP2010525192A
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English (en)
Japanese (ja)
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JP2010539715A (ja
JP5362727B2 (ja
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Publication date
Priority claimed from DE102008005344A external-priority patent/DE102008005344A1/de
Application filed filed Critical
Publication of JP2010539715A publication Critical patent/JP2010539715A/ja
Publication of JP2010539715A5 publication Critical patent/JP2010539715A5/ja
Application granted granted Critical
Publication of JP5362727B2 publication Critical patent/JP5362727B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010525192A 2007-09-21 2008-08-28 放射放出コンポーネント Expired - Fee Related JP5362727B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007045087.9 2007-09-21
DE102007045087 2007-09-21
DE102008005344.9 2008-01-21
DE102008005344A DE102008005344A1 (de) 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement
PCT/DE2008/001448 WO2009036731A2 (de) 2007-09-21 2008-08-28 Strahlungsemittierendes bauelement

Publications (3)

Publication Number Publication Date
JP2010539715A JP2010539715A (ja) 2010-12-16
JP2010539715A5 true JP2010539715A5 (enExample) 2011-07-28
JP5362727B2 JP5362727B2 (ja) 2013-12-11

Family

ID=40384494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010525192A Expired - Fee Related JP5362727B2 (ja) 2007-09-21 2008-08-28 放射放出コンポーネント

Country Status (8)

Country Link
US (2) US8373186B2 (enExample)
EP (1) EP2198464B1 (enExample)
JP (1) JP5362727B2 (enExample)
KR (1) KR101460388B1 (enExample)
CN (2) CN101803048B (enExample)
DE (1) DE102008005344A1 (enExample)
TW (2) TWI473297B (enExample)
WO (1) WO2009036731A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100788A1 (de) * 2012-01-31 2013-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Konverterelement
CN103633223B (zh) * 2013-11-13 2016-08-17 苏州热驰光电科技有限公司 高光透玻璃基板led照明装置及其制备方法
WO2016079658A1 (en) * 2014-11-18 2016-05-26 Industries Yifei Wang Inc. Led module, methods of manufacturing same and luminaire integrating same
US20220223771A1 (en) * 2019-05-14 2022-07-14 Osram Opto Semiconductors Gmbh Optoelectronic component, pixels, display assembly, and method
KR20240133228A (ko) * 2023-02-28 2024-09-04 삼성전자주식회사 반도체 발광 소자
CN116344707A (zh) * 2023-03-20 2023-06-27 华灿光电（浙江）有限公司 改善发光亮度的发光二极管及其制备方法
CN120214069B (zh) * 2025-05-23 2025-08-22 上海聚跃检测技术有限公司 一种半导体晶圆表面的芯片检测方法及系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
JP4834198B2 (ja) 2002-12-25 2011-12-14 独立行政法人科学技術振興機構 発光素子装置、受光素子装置、光学装置、フッ化物結晶
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
FR2861853B1 (fr) 2003-10-30 2006-02-24 Soitec Silicon On Insulator Substrat avec adaptation d'indice
JP2005157313A (ja) * 2003-10-30 2005-06-16 Arisawa Mfg Co Ltd リアプロジェクションディスプレイ用スクリーン
TW200602585A (en) * 2004-03-16 2006-01-16 Koninkl Philips Electronics Nv High brightness illumination device with incoherent solid state light source
JP2006093602A (ja) * 2004-09-27 2006-04-06 Toyoda Gosei Co Ltd 発光素子
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
ATE483257T1 (de) * 2004-10-12 2010-10-15 Koninkl Philips Electronics Nv Elektroluminsezente lichtquelle
TWI239671B (en) * 2004-12-30 2005-09-11 Ind Tech Res Inst LED applied with omnidirectional reflector
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP2006261540A (ja) * 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス
JP4996101B2 (ja) * 2006-02-02 2012-08-08 新光電気工業株式会社 半導体装置及び半導体装置の製造方法

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