TW200915459A - Method for evaluating contamination of semiconductor manufacturing apparatus - Google Patents

Method for evaluating contamination of semiconductor manufacturing apparatus Download PDF

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Publication number
TW200915459A
TW200915459A TW97120743A TW97120743A TW200915459A TW 200915459 A TW200915459 A TW 200915459A TW 97120743 A TW97120743 A TW 97120743A TW 97120743 A TW97120743 A TW 97120743A TW 200915459 A TW200915459 A TW 200915459A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
contamination
wafer
film
evaluation
Prior art date
Application number
TW97120743A
Other languages
English (en)
Chinese (zh)
Inventor
Kenji Araki
Takao Takenaka
Masanori Mayusumi
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200915459A publication Critical patent/TW200915459A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Chemical Vapour Deposition (AREA)
  • Sampling And Sample Adjustment (AREA)
TW97120743A 2007-06-05 2008-06-04 Method for evaluating contamination of semiconductor manufacturing apparatus TW200915459A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007149659 2007-06-05

Publications (1)

Publication Number Publication Date
TW200915459A true TW200915459A (en) 2009-04-01

Family

ID=40093624

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97120743A TW200915459A (en) 2007-06-05 2008-06-04 Method for evaluating contamination of semiconductor manufacturing apparatus

Country Status (3)

Country Link
JP (1) JP5120789B2 (ja)
TW (1) TW200915459A (ja)
WO (1) WO2008149806A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5682186B2 (ja) * 2010-09-09 2015-03-11 株式会社Sumco 環境雰囲気の不純物汚染評価方法
JP5794212B2 (ja) * 2012-08-24 2015-10-14 信越半導体株式会社 気相成長装置の汚染評価方法及びシリコンエピタキシャルウェーハの製造方法
JP6070095B2 (ja) * 2012-11-13 2017-02-01 株式会社Sumco エピタキシャルシリコンウェーハの汚染評価方法およびエピタキシャル成長装置炉内の汚染評価方法
JP6136205B2 (ja) * 2012-11-13 2017-05-31 株式会社Sumco エピタキシャル成長装置炉内の汚染評価方法および汚染評価用テストウェーハ
EP2779220B1 (en) * 2013-03-12 2017-10-25 GLobalWafers Japan Co., Ltd. Saturation voltage estimation method and silicon epitaxial wafer manufaturing method
KR102261633B1 (ko) * 2019-02-01 2021-06-04 에스케이실트론 주식회사 에피택셜웨이퍼의 금속오염분석방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666260B2 (ja) * 1984-01-18 1994-08-24 株式会社東芝 清浄度評価方法
JPH11204604A (ja) * 1998-01-12 1999-07-30 Shin Etsu Handotai Co Ltd ウエーハ周辺部の金属不純物回収方法とその装置
JP2001174375A (ja) * 1999-12-20 2001-06-29 Toshiba Corp 金属汚染評価用ウェハおよび金属汚染評価方法
JP2002252179A (ja) * 2001-02-22 2002-09-06 Shin Etsu Handotai Co Ltd 半導体基板熱処理用チューブの清浄化方法並びに金属汚染ゲッター基板及び再生金属汚染ゲッター基板
JP4761179B2 (ja) * 2001-07-19 2011-08-31 信越半導体株式会社 ウェーハ表面に吸着したボロン濃度の測定方法及び環境雰囲気中のボロンレベルの評価方法

Also Published As

Publication number Publication date
JP5120789B2 (ja) 2013-01-16
JPWO2008149806A1 (ja) 2010-08-26
WO2008149806A1 (ja) 2008-12-11

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