200915459 九、發明說明 【發明所屬之技術領域】 本發明係關於可簡便地掌握半導體製造裝置（例如氣 相成長裝置）之污染量的半導體製造裝置之污染評價方法 【先前技術】 目前爲止已知有在矽單晶基板（以下亦簡稱爲矽基板 )的主表面上，使矽磊晶層（以下亦簡稱爲磊晶層）氣相 成長來製造矽磊晶圓（以下亦簡稱爲磊晶晶圓）的方法。 作爲以此方式用來製造磊晶晶圓的氣相成長裝置，一般乃 具備：在氣相成長時矽基板設置於內部的反應容器；用以 將該反應容器內的矽基板加熱至所期望之溫度的加熱裝置 ;和用以將氣相成長用氣體供給至該反應容器的氣體供給 裝置。 【發明內容】 〔發明所欲解決之課題〕 在磊晶晶圓的製造時會成爲問題者係上述氣相成長裝 置的污染。評價氣相成長裝置的污染（污染的有無或污染 的程度）時，係在矽基板上的主表面上使磊晶層氣相成長 ，以測定/分析該氣相成長後的磊晶晶圓，來進行評價。 然而，隨著磊晶晶圓的品質提昇且污染程度減少，捕捉成 爲污染原因的雜質更加困難。一般來說，利用電性測定（ -5- 200915459 例如S P V法或D L T S法）時，檢測感度雖高，但在雜質的 特定上只有部分的元素有效，爲評價更多的元素，適用化 學分析法。但是，利用化學分析法會有無法像電性測定法 那樣進行高感度的分析之問題。 本發明係爲了解決上述問題點而開發者，其目的在於 提供一種針對氣相成長裝置等的半導體製造裝置，可藉由 評價掌握處理時（例如氣相成長時）的污染量之半導體製 造裝置之污染評價方法（例如氣相成長裝置之污染評價方 法）。 〔用以解決課題之手段〕 本發明之半導體製造裝置之污染評價方法，係藉由對 試料半導體晶圓使用半導體製造裝置進行特定的處理，來 製造g平價對象半導體晶圓，且藉由針對該製造的評價對象 半導體晶圓進行污染評價，來評價上述半導體製造裝置的 污染之方法’其特徵爲： 上述試料半導體晶圓的表面係被從熱氧化矽膜、藉由 CVD沉積的氧化矽膜、非晶矽膜及多晶矽膜所成之群組 中選擇的任一種覆膜所被覆。 藉由在上述試料半導體晶圓的主表面上使用氣相成長 裝置使CVD層氣相成長來製造評價對象半導體晶圓，且 藉由針對該製造的評價對象晶圓進行污染評價，可評價上 述氣相成長裝置的污染。200915459 IX. EMBODIMENT OF THE INVENTION [Technical Field] The present invention relates to a pollution evaluation method for a semiconductor manufacturing apparatus capable of easily grasping the amount of contamination of a semiconductor manufacturing apparatus (for example, a vapor phase growth apparatus). [Prior Art] On the main surface of a germanium single crystal substrate (hereinafter also referred to as a germanium substrate), a germanium epitaxial layer (hereinafter also referred to as an epitaxial layer) is grown in a vapor phase to fabricate a germanium wafer (hereinafter also referred to as an epitaxial wafer). )Methods. The vapor phase growth apparatus used for manufacturing the epitaxial wafer in this manner generally includes a reaction vessel in which the crucible substrate is disposed inside when the vapor phase is grown; and the crucible substrate in the reaction vessel is heated to a desired state. a heating device for temperature; and a gas supply device for supplying a gas for gas phase growth to the reaction vessel. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] In the production of an epitaxial wafer, a problem is caused by the contamination of the vapor phase growth device. When evaluating the contamination of the vapor phase growth apparatus (the presence or absence of contamination or the degree of contamination), the epitaxial layer is vapor-phase grown on the main surface of the tantalum substrate to measure/analyze the epitaxial wafer after the vapor phase growth. To evaluate. However, as the quality of epitaxial wafers increases and the degree of contamination decreases, it is more difficult to capture impurities that are a cause of contamination. In general, when the electrical measurement (-5-200915459, for example, the SPV method or the DLTS method) is used, the detection sensitivity is high, but only a part of the elements are effective in the specificity of the impurities, and for evaluating more elements, chemical analysis is applied. . However, the chemical analysis method has a problem that high sensitivity analysis cannot be performed as in the electrical measurement method. The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus for a vapor phase growth apparatus or the like, which can be used to evaluate a semiconductor manufacturing apparatus capable of grasping a contamination amount during processing (for example, when vapor phase is grown). Pollution evaluation method (for example, pollution evaluation method of gas phase growth apparatus). [Means for Solving the Problem] The contamination evaluation method of the semiconductor manufacturing apparatus of the present invention is a method of manufacturing a sample wafer semiconductor wafer using a semiconductor manufacturing apparatus, thereby producing a parity semiconductor wafer, and The method for evaluating the contamination of the semiconductor manufacturing apparatus by performing the contamination evaluation of the semiconductor wafer to be evaluated is characterized in that the surface of the sample semiconductor wafer is formed from a thermal yttrium oxide film, a yttrium oxide film deposited by CVD, Any one of the selected ones of the amorphous ruthenium film and the polycrystalline ruthenium film is coated. The semiconductor wafer to be evaluated is produced by vapor-grown the CVD layer on the main surface of the sample semiconductor wafer by using a vapor phase growth apparatus, and the gas can be evaluated by performing contamination evaluation on the wafer to be evaluated. Contamination of phase growing devices.
在上述試料半導體晶圓的主表面上氣相成長的CVD 200915459 層係以多晶矽層或氧化矽膜層爲合適。以利用蝕刻藥液將 上述評價對象半導體晶圓蝕刻特定時間，將該評價對象半 導體晶圓之表層部的雜質取入上述蝕刻藥液中，藉以將該 含雜質的蝕刻藥液施行化學分析，來進行上述污染評價爲 佳。 具體而言，利用蝕刻藥液（例如氫氟酸與硝酸的混合 酸）將溶解有該評價對象半導體晶圓表層部之雜質的含雜 質蝕刻藥液予以蒸發乾固，且用酸（例如硝酸）將包含於 殘渣的雜質再抽取出來，然後，利用原子吸光分析裝置或 ICP發光分析裝置或ICP質量分析裝置加以分析，藉以進 行評價對象半導體晶圓的污染評價。依據該評價對象半導 體晶圓的污染評價，可評價用以在半導體基板的主表面上 進行特定處理（例如使CVD層氣相成長）之半導體製造 裝置（例如氣相成長裝置）的污染，因此，可掌握半導體 製造裝置（例如氣相成長裝置）的污染量。依此構成，可 確實地進行半導體製造裝置（例如氣相成長裝置）的維修 或改良，而可達成半導體晶圓的品質提昇。 〔發明之功效〕 根據本發明之半導體製造裝置的污染評價方法，藉由 對試料半導體晶圓使用半導體製造裝置（例如氣相成長裝 置）使多晶矽膜或氧化矽膜成長，且將該成長的多晶矽膜 或氧化矽膜進行化學分析，可簡便地掌握半導體製造裝置 (例如氣相成長裝置）的污染量。因此，可確實地進行半 -7- 200915459 導體處理裝置（例如氣相成長裝置）的維修或改良，結果 ’可達成半導體晶圓的品質提昇。 【實施方式】 以下’參照附圖說明本發明之實施型態，但圖示例係 用來表示本發明之較佳實施型態，只要不逸離本發明的技 術思想’皆可進行各種變形乃不言而喻者。 首先’參照第4圖，說明用以製造矽晶圓之氣相成長 裝置的構成，作爲本發明方法中所使用之半導體裝置的一 例。如第4圖所示，氣相成長裝置1 〇具有進行氣相成長時 砂單晶基板1 2 (以下簡稱爲矽基板1 2 )配置於內部的反應 容器14。在該反應容器14內，圓盤狀的基板保持器（ susceptor ) 16係被配置成水平狀態，在該基板保持器16 的上面可載置矽基板1 2。在反應容器1 4的一側部設有氣體 導入路徑1 8，經由該氣體導入路徑1 8可將含有原料氣體（ 例如三氯矽烷（trichlorosilane )等）及載體氣體（例如 氫氣）的氣相成長用氣體導入反應容器14內。在反應容器 1 4的另一側部設有氣體排出路徑20，經由該氣體排出路徑 20可將氣體從反應容器14排出。22係被設置於基板保持器 16下方的加熱裝置，可將載置於基板保持器16上的矽基板 12加熱至所期望的溫度。24係被安裝於基板保持器16的下 面且使基板保持器16旋轉於板面方向的旋轉裝置。藉由驅 動該旋轉裝置24，可在氣相成長時使基板保持器1 6旋轉於 板面方向，伴隨著該旋轉，矽基板1 2亦被旋轉於該板面方 200915459 向。 使用此種構成的氣相成長裝置10來製造砂晶圓時，可 將矽基板1 2以其主表面朝上的方式載置於基板保持器丨6上 ’且藉由加熱裝置22將該基板保持器16上的矽基板12加熱 至所期望的成長溫度’並同時經由氣體導入路徑1 8將含有 原料氣體（例如三氯矽烷等）及載體氣體（例如氫氣等） 的氣相成長用氣體水平地供給到矽基板1 2的主表面上。依 此方式，在砍基板12的主表面上使CVD層氣相成長，可 製造矽晶圓（以下亦簡稱爲晶圓）。 繼之，參照第1圖’說明本發明方法的步驟順序。本 發明之半導體裝置的污染評價方法係如第1圖的流程圖所 示，首先，準備試料半導體晶圓（第1圖的步驟1 0 0 )。本 發明中’作爲試料半導體晶圓’可使用其表面被從熱氧化 矽膜、藉由C V D沉積的氧化矽膜、非晶矽膜及多晶矽膜 所成之群組中選擇的任一種覆膜所被覆者。 藉由對上述試料半導體晶圓使用半導體裝置進行特定 的處理，來製造評價對象半導體晶圓（第1圖的步驟1 〇 2 ) 。繼之’針對該製造的評價對象半導體晶圓進行污染評價 (第1圖的步驟1 0 4 )。依據該評價對象半導體晶圓的污染 評價’來評價半導體製造裝置中的污染（第1圖的步驟106 )° 作爲本發明方法之具體的實施型態，係參照第2圖〜 第7圖’更詳細地說明在矽基板的主表面上使c V D層氣相 成長之氣相成長裝置的污染評價之情形 -9- 200915459 如第2圖的流程圖所記載’先準備試料半導體晶圓（ 第2圖的步驟2 0 0 )。作爲該試料半導體晶圓3 〇 a，如第5 圖（a )所示’係使用在矽基板！ 2的主表面上使熱氧化矽 膜3 2a成長而被覆其主表面者。又，作爲試料半導體晶圓 30B’如第5圖（b)所示，係使用在矽基板12的主表面上 使多晶矽膜32b成長而被覆其主表面者。作爲該被覆層， 除了上述覆膜外，亦可使用藉由CVD沉積的氧化矽膜及 非晶矽膜等。 本實施型態中’係將使用上述氣相成長裝置1 〇在矽基 板12的主表面上沉積有熱氧化矽膜32a的半導體晶圓30A (第5圖（a)) ’供作爲氣相成長裝置1〇之污染評價用的 試料半導體晶圓。又，亦可將在矽基板12的主表面上成長 有多晶矽膜3 2b的半導體晶圓3 0B (第5圖（b ))，供作 爲氣相成長裝置1 〇之污染評價用的試料半導體晶圓。以下 的說明中，係就使用試料半導體晶圓3 0 A及3 Ο B的情形進 行說明，惟主要乃針對試料半導體晶圓3 0 A進行說明，此 外，就試料半導體晶圓3 0B而言，由於也是以同樣的方式 處理者，故可依需要附帶進行其說月。 上述試料半導體晶圓30Α係以其主表面朝上的方式被 載置於基板保持器16上。將該基板保持器16上的試料半導 體晶圓30Α藉由加熱裝置22加熱至所期望的成長溫度，並 同時經由氣體導入路徑1 8將含有原料氣體（例如三氯矽烷 等）及載體氣體（例如氫氣等）的氣相成長用氣體水平地 供給至試料半導體晶圓3 0 Α的主表面上。 -10- 200915459 依此方式’在試料半導體晶圓3〇A的主表面上成長多 晶砂膜3 3而製造評價對象晶圓3 4 a，同時從氣相成長裝置 1 0之基板保持器1 6、加熱裝置2 2、氣體導入路徑丨8、反應 容器14、旋轉裝置24產生的污染也會被取入所成長的多晶 矽膜33中（第6圖（a)及第2圖的步驟2〇2)。又，使用試 料半導體晶圓3 0B時’係在其主表面上成長多晶矽膜3 3而 製造評價對象晶圓34B，故從上述各構件產生的污染也同 樣會被取入所成長的多晶矽膜3 3中（第6圖（b )及第2圖 的步驟202 )。 更且，由於在評價對象晶圓3 4 A中，被取入多晶矽膜 3 3中的污染會接收多晶矽膜33在成長時的熱歷程（ thermal history) ’故會在多晶矽膜3 3與成長於矽基板1 2 上之熱氧化矽膜3 2 a的界面附近濃縮。又，由於在評價對 象晶圓34B中，被取入多晶矽膜33中的污染會接收多晶矽 膜33在成長時的熱歷程（thermal history)，故會在多晶 矽膜33與沉積於矽基板12上之多晶矽膜32a的界面附近濃 縮。 接著，參照第7圖’針對僅將上述評價對象半導體晶 圓3 4 A上成長有多晶矽膜的一面藉由蝕刻液選擇性地予以 蝕刻用的蝕刻容器進行說明。第7圖中，4 〇係P T F E製的 蝕刻容器，具有由環狀側壁42a及底壁42b所構成的盤42 。在該環狀側壁4 2 a的內周面形成有母螺絲部。4 4係爲將 中央部設成開口部4 5的環狀環’其可裝卸自如地安裝於上 述盤42。在該環44之側壁44&的外周面’形成有可裝卸自 -11 - 200915459 如地與上述母螺絲部螺合的公螺絲部。46爲蓋體，其可裝 卸自如地載置於上述環狀環4 4之側壁4 4 a的上端面，而進 行封閉該環狀環44之開口部45上部的作用。 繼之，參照第3圖，說明使用上述蝕刻容器4 0的蝕刻 操作。首先，將成長有上述多晶矽膜3 3之氣相成長裝置之 污染評價用的評價對象晶圓3 4 A，以多晶矽膜3 3作爲主表 面的方式安置於上述蝕刻容器40之盤構件42的底壁42b上 面（第3圖的步驟3 00 )。藉由將環狀環44之側壁44a的公 螺絲部螺入上述盤構件42之側壁42a的母螺絲部，可使該 環狀環44之側壁44a的下端面密接於評價對象晶圓34A的 外周部。此時，環狀環44之側壁44a的下端面與評價對象 晶圓34A之外周部的密接，係以將與評價對象晶圓34a之 外周端距離特定寬度（例如1 〇mm左右）的環狀部分設爲 密接部爲合適。 於上述環狀環4 4之側壁4 4 a的下端面與評價對象晶圓 34A之外周部密接的狀態，在環狀環44的開口部分，評價 對象晶圓34A係在多晶矽膜33露出的狀態被保持載置於盤 構件42的底壁42b上。於該狀態下將藥液（以38 %的氫氟 酸與6 8 %的硝酸與純水的混合酸，容量比爲1.2 : 6.5 : 4 ) 少量地（例如3 0 m 1左右）注入盤構件4 2內，進行一定時 間的蝕刻（第3圖的步驟3〇2 )。 藉由該蝕刻處理，將所成長的多晶矽膜3 3和熱氧化矽 膜32a及矽基板12之主表面側的表層部一起或個別地溶解 ，而使雜質被取入蝕刻藥液中（第3圖的步驟3 04 )。將取 -12- 200915459 入有雜質的蝕刻液在加熱板上於190 °C下進行蒸發乾固， 用酸（硝酸）將包含於殘渣中的雜質再抽取出來，然後， 利用ICP質量分析裝置進行分析（第3圖的步驟306)。 依此方式進行取入有雜質之蝕刻藥液的分析，可進行 評價對象半導體晶圓34A的污染評價（第2圖的步驟204 ) 。依據該評價對象半導體晶圓3 4 A的污染評價，可進行氣 相成長裝置的污染評價（第2圖的步驟206)。 又，於評價對象半導體晶圓3 4B之情況，其在藉由上 述蝕刻處理將所成長的多晶矽膜3 3和多晶矽膜3 2 b及矽基 板1 2之主表面側的表層部—起或個別地溶解，而使雜質被 取入蝕刻藥液中之部分係與評價對象半導體晶圓3 4 A之情 況不同，而其他部分係相同。 〔實施例〕 以下’例舉實施例’更具體地說明本發明。此等實施 例係爲例示’不應作限定式解釋乃不言而喻者。 (實施例1 ) 本實施例中’表示氣相成長裝置之污染評價的一例。 依據第2圖的順序製作試料半導體晶圓（熱氧化矽覆膜） ’且對該試料半導體晶圓使用氣相成長裝置使多晶矽膜成 長來製造評價對象晶圓。依據第3圖的順序對該評價對象 晶圓使用蝕刻藥液來進行蝕刻處理’將該評價對象晶圓之 表層邰的雜質取入蝕刻藥液中。針對取入有該雜質的蝕刻 -13- 200915459 藥液，進行化學分析。此外，關於上述氣相成長裝置，係 於該氣相成長裝置的維修後、以及利用該氣相成長裝置進 行晶圓製品製造時，來評價該氣相成長裝置的污染量。就 上述評價對象晶圓之表層部的雜質（Fe、Ni )濃度，將按 不同深度或不同層的分析結果顯示於第8圖及第9圖。氣相 成長裝置於維修後所成長之多晶矽膜中的Fe、Ni濃度被 檢測出比較高，暗指維修時的污染。然而，得知於晶圓製 品製造時所成長之多晶砍膜中的F e、N i濃度較低，與石夕 基板的濃度大致相同。因此，此時可視爲幾乎沒有污染。 (比較例1 ) 製作一般的半導體晶圓，對該半導體晶圓使用氣相成 長裝置使矽磊晶層成長來製造磊晶晶圓。利用與實施例1 同樣的方式對該磊晶晶圓施行蝕刻處理，且針對將該磊晶 晶圓之表層部的雜質取入蝕刻藥液中的蝕刻藥液進行化學 分析，並利用與實施例1同樣的方式對上述氣相成長裝置 進行雜質評價。就上述磊晶晶圓之表層部的雜質（Fe、Ni )濃度，將按不同深度的分析結果顯示於第1 0圖及第1 1圖 。氣相成長裝置於維修後所成長之磊晶層中的F e、N i濃 度亦與矽基板的濃度大致相同。又，氣相成長裝置在維修 後的Fe、Ni濃度與在晶圓製品製造時的Fe、Ni濃度，其 値幾乎沒有改變。因此，得知在磊晶層中無法檢測出F e 、Ni污染。 由實施例1的結果得知，藉由在氣相成長裝置中使多 -14- 200915459 晶砂膜成長’進行多晶矽膜的雜質分析，可簡單地掌握該 氣相成長裝置的污染量。 【圖式簡單說明】 第1圖係表示本發明之半導體裝置之污染評價方法之 步驟順序的一例之流程圖。 第2H係表示本發明之半導體裝置之污染評價方法之 步驟順序的其他例之流程圖。 第3圖係表示本發明方法之污染評價之順序的一例之 流程圖。 第4圖係表示氣相成長裝置之構成例的剖面槪略說明 圖。 第5圖係表示試料半導體晶圓的剖面說明圖，（& )係 在試料砂基板主表面上使熱氧化矽膜成長的試料半導體晶 圓’（b )係在試料矽基板主表面上使多晶矽膜沉積的試 料半導體晶圓。 第6圖係表示在第5圖之試料半導體晶圓的主表面上使 多晶矽膜成長的評價對象半導體晶圓之剖面說明圖，（a )係在第5圖（a )的試料半導體晶圓上使多晶矽膜成長的 評價對象半導體晶圓，（b )係在第5圖（b )的試料半導 體晶圓上使多晶矽膜成長的評價對象半導體晶圓。 第7圖係僅將評價對象半導體晶圓上成長有多晶矽膜 的一面藉由蝕刻液選擇性地予以蝕刻用的蝕刻容器之剖面 說明圖。 -15- 200915459 第8圖係表示針對實施例1的Fe之污染評價結果的曲 線圖。 第9圖係表示針對實施例1的Ni之污染評價結果的曲 線圖。 第1 〇圖係表示針對實施例2的F e之污染評價結果的曲 線圖。 第1 1圖係表示針對實施例2的Ni之污染評價結果的曲 線圖。 【主要元件符號說明】 1 〇 =氣相成長裝置 1 2 :矽單晶基板 1 4 :反應容器 16:基板保持器（susceptor) 1 8 :氣體導入路徑 2 0 :氣體排出路徑 2 2 :加熱裝置 24 :旋轉裝置 30A、30B :試料半導體晶圓 3 2a :熱氧化矽膜 32b、33 :多晶矽膜 34A、34B :評價對象晶圓 4 0 :蝕刻容器 42 :盤構件 -16- 200915459 42a 、 44a ：側壁 42b :底壁 44 :環狀環 46 :蓋體The CVD 200915459 layer which is vapor-grown on the main surface of the sample semiconductor wafer is preferably a polycrystalline germanium layer or a hafnium oxide layer. The semiconductor wafer to be evaluated is etched for a specific time by using an etching solution, and impurities in the surface layer portion of the semiconductor wafer to be evaluated are taken into the etching solution, thereby performing chemical analysis on the etching solution containing the impurity. It is preferable to carry out the above pollution evaluation. Specifically, an etching-containing etching solution in which an impurity of a surface portion of the semiconductor wafer to be evaluated is dissolved is evaporated and dried by an etching solution (for example, a mixed acid of hydrofluoric acid and nitric acid), and an acid (for example, nitric acid) is used. The impurities contained in the residue are further extracted, and then analyzed by an atomic absorption spectrometer or an ICP emission spectrometer or an ICP mass spectrometer to perform contamination evaluation of the semiconductor wafer to be evaluated. According to the contamination evaluation of the semiconductor wafer to be evaluated, contamination of a semiconductor manufacturing apparatus (for example, a vapor phase growth apparatus) for performing specific processing (for example, vapor-phase growth of a CVD layer) on the main surface of the semiconductor substrate can be evaluated. The amount of contamination of a semiconductor manufacturing device such as a vapor phase growth device can be grasped. According to this configuration, the semiconductor manufacturing apparatus (e.g., the vapor phase growth apparatus) can be reliably repaired or improved, and the quality of the semiconductor wafer can be improved. [Effect of the Invention] According to the contamination evaluation method of the semiconductor manufacturing apparatus of the present invention, the polycrystalline germanium film or the hafnium oxide film is grown by using a semiconductor manufacturing apparatus (for example, a vapor phase growth apparatus) on the sample semiconductor wafer, and the grown polycrystalline silicon is grown. The chemical analysis of the film or the ruthenium oxide film allows for easy grasp of the amount of contamination of a semiconductor manufacturing device (for example, a vapor phase growth device). Therefore, maintenance or improvement of the semi--7-200915459 conductor processing apparatus (e.g., vapor phase growth apparatus) can be reliably performed, and as a result, the quality of the semiconductor wafer can be improved. Embodiments of the present invention will be described with reference to the accompanying drawings, but the drawings are intended to illustrate preferred embodiments of the present invention, and various modifications may be made without departing from the technical spirit of the invention. It goes without saying. First, the configuration of a vapor phase growth apparatus for manufacturing a germanium wafer will be described with reference to Fig. 4 as an example of a semiconductor device used in the method of the present invention. As shown in Fig. 4, the vapor phase growth apparatus 1 has a reaction vessel 14 in which a sand single crystal substrate 1 2 (hereinafter simply referred to as a tantalum substrate 1 2 ) is disposed inside the vapor phase growth chamber. In the reaction container 14, a disk-shaped substrate holder (susceptor) 16 is placed in a horizontal state, and the substrate 12 can be placed on the upper surface of the substrate holder 16. A gas introduction path 1 is provided at one side of the reaction container 14 , and a gas phase growth containing a source gas (for example, trichlorosilane or the like) and a carrier gas (for example, hydrogen) can be grown through the gas introduction path 18 . The gas is introduced into the reaction vessel 14. A gas discharge path 20 is provided at the other side of the reaction vessel 14 through which the gas can be discharged from the reaction vessel 14. The 22-series heating device disposed under the substrate holder 16 heats the crucible substrate 12 placed on the substrate holder 16 to a desired temperature. The 24 series is attached to the lower surface of the substrate holder 16 and rotates the substrate holder 16 in the plate surface direction. By driving the rotating device 24, the substrate holder 16 can be rotated in the plate surface direction during the vapor phase growth, and the 矽 substrate 12 is also rotated in the plate surface 200915459 direction along with the rotation. When the sand wafer is manufactured using the vapor phase growth apparatus 10 having such a configuration, the crucible substrate 1 2 can be placed on the substrate holder 6 with its main surface facing upwards' and the substrate is heated by the heating device 22. The crucible substrate 12 on the holder 16 is heated to a desired growth temperature' while the gas phase growth gas level containing the material gas (for example, trichloromethane or the like) and the carrier gas (for example, hydrogen gas) is simultaneously supplied through the gas introduction path 18. The ground is supplied onto the main surface of the crucible substrate 12. In this manner, the CVD layer is vapor-grown on the main surface of the dicing substrate 12, and a ruthenium wafer (hereinafter also referred to simply as a wafer) can be manufactured. Next, the sequence of steps of the method of the present invention will be described with reference to Fig. 1'. The contamination evaluation method of the semiconductor device of the present invention is as shown in the flowchart of Fig. 1. First, a sample semiconductor wafer is prepared (step 1 0 0 of Fig. 1). In the present invention, as the sample semiconductor wafer, any one of the groups selected from the group consisting of a thermal yttrium oxide film, a yttrium oxide film deposited by CVD, an amorphous ruthenium film, and a polysilicon film can be used. Covered. The semiconductor wafer to be evaluated is produced by performing specific processing on the sample semiconductor wafer using a semiconductor device (step 1 〇 2 in Fig. 1). Then, contamination evaluation is performed on the semiconductor wafer to be evaluated for the manufacturing (step 1 0 4 of Fig. 1). The contamination in the semiconductor manufacturing apparatus is evaluated based on the contamination evaluation of the semiconductor wafer to be evaluated (step 106 in Fig. 1). As a specific embodiment of the method of the present invention, reference is made to Figs. 2 to 7 The contamination evaluation of the vapor phase growth apparatus in which the c VD layer is vapor-grown on the main surface of the ruthenium substrate will be described in detail. -9-200915459 As described in the flowchart of Fig. 2, the sample semiconductor wafer is prepared first (2nd) Step 2 0 0 of the figure. As the sample semiconductor wafer 3 〇 a, as shown in Fig. 5(a), it is used in the ruthenium substrate! On the main surface of 2, the thermal yttria film 32a is grown to cover its main surface. Further, as shown in Fig. 5(b), the sample semiconductor wafer 30B' is formed by growing the polysilicon film 32b on the main surface of the ruthenium substrate 12 to cover the main surface thereof. As the coating layer, in addition to the above coating film, a ruthenium oxide film deposited by CVD, an amorphous ruthenium film or the like can be used. In the present embodiment, a semiconductor wafer 30A (Fig. 5(a)) in which the thermal yttria film 32a is deposited on the main surface of the ruthenium substrate 12 using the vapor phase growth apparatus 1 described above is used as a vapor phase growth. A sample semiconductor wafer for contamination evaluation of the device. Further, a semiconductor wafer 30B (Fig. 5(b)) in which a polycrystalline germanium film 3 2b is grown on the main surface of the germanium substrate 12 can be used as a sample semiconductor crystal for contamination evaluation of the vapor phase growth apparatus 1 circle. In the following description, the case where the sample semiconductor wafers 30 A and 3 Ο B are used will be described, but the sample semiconductor wafer 30 A will be mainly described, and the sample semiconductor wafer 30 B will be described. Since it is also handled in the same way, it can be carried out as needed. The sample semiconductor wafer 30 is placed on the substrate holder 16 with its main surface facing upward. The sample semiconductor wafer 30 on the substrate holder 16 is heated to a desired growth temperature by the heating device 22, and simultaneously contains a material gas (for example, trichloromethane or the like) and a carrier gas via the gas introduction path 18 (for example). The vapor phase growth gas of hydrogen gas or the like is horizontally supplied onto the main surface of the sample semiconductor wafer 30 Α. -10-200915459 In this way, the polycrystalline sand film 3 3 is grown on the main surface of the sample semiconductor wafer 3A to produce the evaluation target wafer 3 4 a, and the substrate holder 1 from the vapor phase growth device 10 is simultaneously 6. Heating device 2 2. Contamination generated by the gas introduction path 丨8, the reaction container 14, and the rotating device 24 is also taken into the grown polycrystalline ruthenium film 33 (Fig. 6(a) and Fig. 2, step 2 〇 2 ). In addition, when the sample semiconductor wafer 30B is used, the polycrystalline germanium film 3 is grown on the main surface thereof to produce the evaluation target wafer 34B. Therefore, the contamination generated from the respective members is also taken in the grown polycrystalline germanium film 3 3 . Medium (Fig. 6(b) and step 202 of Fig. 2). Further, in the evaluation target wafer 34A, the contamination taken into the polysilicon film 3 3 receives the thermal history of the polycrystalline germanium film 33 during growth, so that it grows in the polycrystalline germanium film 3 3 The vicinity of the interface of the thermal yttrium oxide film 3 2 a on the ruthenium substrate 1 2 is concentrated. Further, in the evaluation target wafer 34B, the contamination taken into the polysilicon film 33 receives the thermal history of the polysilicon film 33 during growth, so that it is deposited on the germanium substrate 13 and deposited on the germanium substrate 12. The vicinity of the interface of the polycrystalline germanium film 32a is concentrated. Next, an etching container for selectively etching only one surface on which the polycrystalline germanium film is grown on the semiconductor wafer 3 4 A to be evaluated will be described with reference to Fig. 7 . In Fig. 7, an etching container made of a 〇P T F E has a disk 42 composed of an annular side wall 42a and a bottom wall 42b. A female screw portion is formed on an inner circumferential surface of the annular side wall 42a. The 4 4 is an annular ring ′ having a central portion formed as an opening 45, and is detachably attached to the disk 42. A male screw portion detachably coupled to the female screw portion is detachably attached to the outer peripheral surface ‘ of the side wall 44&' of the ring 44. Reference numeral 46 denotes a lid which is detachably placed on the upper end surface of the side wall 44 4 a of the annular ring 44 and which functions to close the upper portion of the opening portion 45 of the annular ring 44. Next, referring to Fig. 3, an etching operation using the etching container 40 described above will be described. First, the evaluation target wafer 3 4 A for contamination evaluation of the vapor phase growth apparatus in which the polycrystalline germanium film 3 is grown is placed on the bottom of the disk member 42 of the etching container 40 in such a manner that the polysilicon film 3 3 is the main surface. Above wall 42b (step 3 00 of Figure 3). By screwing the male screw portion of the side wall 44a of the annular ring 44 into the female screw portion of the side wall 42a of the disk member 42, the lower end surface of the side wall 44a of the annular ring 44 can be in close contact with the outer periphery of the evaluation target wafer 34A. unit. In this case, the lower end surface of the side wall 44a of the annular ring 44 is in close contact with the outer peripheral portion of the evaluation target wafer 34A, and is formed in a ring shape having a specific width (for example, about 1 〇mm) from the outer peripheral end of the evaluation target wafer 34a. It is suitable to partially set the contact portion. In a state where the lower end surface of the side wall 440a of the annular ring 44 is in close contact with the outer peripheral portion of the evaluation target wafer 34A, the evaluation target wafer 34A is exposed in the opening portion of the annular ring 44 in a state where the polycrystalline germanium film 33 is exposed. It is held on the bottom wall 42b of the disk member 42. In this state, the chemical solution (mixed acid of 38% hydrofluoric acid and 68% nitric acid and pure water, volume ratio of 1.2: 6.5: 4) is injected into the disc member in a small amount (for example, about 30 m 1 ). In 4 2, etching is performed for a certain period of time (step 3〇2 of Fig. 3). By the etching treatment, the grown polycrystalline germanium film 3 3 and the thermal yttrium oxide film 32a and the surface layer portion on the main surface side of the ruthenium substrate 12 are dissolved together or individually, and impurities are taken into the etching solution (third) Step 3 of the figure 04). The etchant containing -12-200915459 into the impurities was evaporated to dryness on a hot plate at 190 ° C, and the impurities contained in the residue were extracted again with acid (nitric acid), and then subjected to ICP mass spectrometry. Analysis (step 306 of Figure 3). In this manner, the analysis of the etching solution in which the impurities are taken in is performed, and the contamination evaluation of the semiconductor wafer 34A to be evaluated can be performed (step 204 in Fig. 2). According to the contamination evaluation of the semiconductor wafer 34A to be evaluated, contamination evaluation of the gas phase growth apparatus can be performed (step 206 of Fig. 2). Further, in the case of evaluating the semiconductor wafer 34B, the surface layer portion on the main surface side of the grown polycrystalline germanium film 3 3 and the poly germanium film 3 2 b and the germanium substrate 1 2 is individually or individually formed by the above etching treatment. The portion which is dissolved in the etching solution and taken into the etching solution is different from the case where the semiconductor wafer 34 4 A is to be evaluated, and the other portions are the same. [Examples] Hereinafter, the present invention will be more specifically described by way of Examples. It is to be understood that these embodiments are not to be construed as limiting. (Example 1) In the present Example, 'an example of contamination evaluation of a vapor phase growth apparatus is shown. A sample semiconductor wafer (thermal ruthenium oxide film) was prepared in the order of Fig. 2, and a polycrystalline germanium film was grown on the sample semiconductor wafer using a vapor phase growth apparatus to produce a wafer to be evaluated. An etching solution is applied to the evaluation target wafer in the order of Fig. 3, and the impurity of the surface layer of the evaluation target wafer is taken into the etching solution. Chemical analysis was carried out for the etching of the -13-200915459 solution in which the impurities were taken. Further, in the vapor phase growth apparatus described above, the amount of contamination of the vapor phase growth apparatus is evaluated after the maintenance of the vapor phase growth apparatus and the production of the wafer product by the vapor phase growth apparatus. The analysis results of the impurity (Fe, Ni) concentration in the surface layer portion of the wafer to be evaluated are shown in Figs. 8 and 9 in the analysis results of different depths or different layers. The concentration of Fe and Ni in the polycrystalline ruthenium film grown by the gas phase growth apparatus after maintenance was detected to be relatively high, implying contamination during maintenance. However, it has been found that the concentration of Fe and Ni in the polycrystalline chopped film grown at the time of manufacture of the wafer product is low, and is substantially the same as the concentration of the substrate. Therefore, it can be considered as almost no pollution at this time. (Comparative Example 1) A general semiconductor wafer was produced, and a germanium epitaxial layer was grown using a vapor phase growth device for the semiconductor wafer to fabricate an epitaxial wafer. The epitaxial wafer is etched in the same manner as in the first embodiment, and the etching solution for taking the impurities in the surface layer portion of the epitaxial wafer into the etching solution is chemically analyzed, and the embodiment is utilized. In the same manner, the gas phase growth apparatus was subjected to impurity evaluation. The analysis results at different depths of the impurity (Fe, Ni) concentration in the surface layer portion of the epitaxial wafer are shown in FIGS. 1 and 1 . The concentration of F e and N i in the epitaxial layer grown by the vapor phase growth apparatus after maintenance is also substantially the same as the concentration of the germanium substrate. Further, the concentration of Fe and Ni after the maintenance of the vapor phase growth apparatus and the Fe and Ni concentrations at the time of manufacture of the wafer product hardly changed. Therefore, it was found that Fe and Ni contamination could not be detected in the epitaxial layer. As a result of the first embodiment, it was found that the amount of contamination of the vapor phase growth apparatus can be easily grasped by performing impurity analysis of the polycrystalline germanium film by growing the poly-14-200915459 crystal sand film in the vapor phase growth apparatus. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing an example of a procedure of a contamination evaluation method for a semiconductor device of the present invention. The second embodiment is a flow chart showing another example of the procedure of the contamination evaluation method for the semiconductor device of the present invention. Fig. 3 is a flow chart showing an example of the procedure of pollution evaluation by the method of the present invention. Fig. 4 is a schematic cross-sectional view showing a configuration example of a vapor phase growth apparatus. Fig. 5 is a cross-sectional explanatory view showing a sample semiconductor wafer, and the sample semiconductor wafer '(b) on which the thermal yttrium oxide film is grown on the main surface of the sample sand substrate is made on the main surface of the sample 矽 substrate; A sample semiconductor wafer deposited by a polysilicon film. Fig. 6 is a cross-sectional explanatory view showing a semiconductor wafer for evaluation in which a polycrystalline germanium film is grown on the main surface of the sample semiconductor wafer of Fig. 5, and (a) is on the sample semiconductor wafer of Fig. 5(a). (b) An evaluation target semiconductor wafer in which a polycrystalline germanium film is grown on a sample semiconductor wafer of FIG. 5(b). Fig. 7 is a cross-sectional explanatory view showing an etching container for selectively etching a surface on which a polycrystalline germanium film is grown on a semiconductor wafer to be evaluated. -15- 200915459 Fig. 8 is a graph showing the results of contamination evaluation of Fe for Example 1. Fig. 9 is a graph showing the results of contamination evaluation of Ni for Example 1. Fig. 1 is a graph showing the results of contamination evaluation for F e of Example 2. Fig. 1 is a graph showing the results of contamination evaluation of Ni for Example 2. [Description of main component symbols] 1 〇 = vapor phase growth device 1 2 : 矽 single crystal substrate 1 4 : reaction container 16: substrate holder (susceptor) 1 8 : gas introduction path 2 0 : gas discharge path 2 2 : heating device 24: Rotating device 30A, 30B: sample semiconductor wafer 3 2a: thermal yttrium oxide film 32b, 33: polycrystalline germanium film 34A, 34B: evaluation target wafer 40: etching container 42: disk member-16 - 200915459 42a, 44a: Side wall 42b: bottom wall 44: annular ring 46: cover