TW200905797A - Fabricating method of IC back-end copper interconnection with copper barrier - Google Patents
Fabricating method of IC back-end copper interconnection with copper barrier Download PDFInfo
- Publication number
- TW200905797A TW200905797A TW96127180A TW96127180A TW200905797A TW 200905797 A TW200905797 A TW 200905797A TW 96127180 A TW96127180 A TW 96127180A TW 96127180 A TW96127180 A TW 96127180A TW 200905797 A TW200905797 A TW 200905797A
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- barrier layer
- layer
- barrier
- integrated circuit
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 82
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 64
- 239000010949 copper Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 230000009977 dual effect Effects 0.000 claims abstract description 15
- 239000011148 porous material Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000003989 dielectric material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000005360 phosphosilicate glass Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012774 insulation material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96127180A TW200905797A (en) | 2007-07-26 | 2007-07-26 | Fabricating method of IC back-end copper interconnection with copper barrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96127180A TW200905797A (en) | 2007-07-26 | 2007-07-26 | Fabricating method of IC back-end copper interconnection with copper barrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200905797A true TW200905797A (en) | 2009-02-01 |
| TWI346370B TWI346370B (enExample) | 2011-08-01 |
Family
ID=44722862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96127180A TW200905797A (en) | 2007-07-26 | 2007-07-26 | Fabricating method of IC back-end copper interconnection with copper barrier |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200905797A (enExample) |
-
2007
- 2007-07-26 TW TW96127180A patent/TW200905797A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI346370B (enExample) | 2011-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |