TW200903782A - Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same - Google Patents

Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same Download PDF

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Publication number
TW200903782A
TW200903782A TW097111114A TW97111114A TW200903782A TW 200903782 A TW200903782 A TW 200903782A TW 097111114 A TW097111114 A TW 097111114A TW 97111114 A TW97111114 A TW 97111114A TW 200903782 A TW200903782 A TW 200903782A
Authority
TW
Taiwan
Prior art keywords
conductor
memory
carbon nanotube
level
diode
Prior art date
Application number
TW097111114A
Other languages
English (en)
Chinese (zh)
Inventor
S Brad Herner
Roy E Scheuerlein
Original Assignee
Sandisk 3D Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/692,148 external-priority patent/US7982209B2/en
Priority claimed from US11/692,144 external-priority patent/US7667999B2/en
Application filed by Sandisk 3D Llc filed Critical Sandisk 3D Llc
Publication of TW200903782A publication Critical patent/TW200903782A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
TW097111114A 2007-03-27 2008-03-27 Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same TW200903782A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/692,148 US7982209B2 (en) 2007-03-27 2007-03-27 Memory cell comprising a carbon nanotube fabric element and a steering element
US11/692,144 US7667999B2 (en) 2007-03-27 2007-03-27 Method to program a memory cell comprising a carbon nanotube fabric and a steering element

Publications (1)

Publication Number Publication Date
TW200903782A true TW200903782A (en) 2009-01-16

Family

ID=39590778

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097111114A TW200903782A (en) 2007-03-27 2008-03-27 Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same

Country Status (6)

Country Link
EP (1) EP2140492A1 (https=)
JP (1) JP2010522991A (https=)
KR (1) KR20100014547A (https=)
CN (1) CN101681921B (https=)
TW (1) TW200903782A (https=)
WO (1) WO2008118486A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI749273B (zh) * 2018-07-18 2021-12-11 南亞科技股份有限公司 動態隨機存取記憶體結構及其製備方法
TWI763443B (zh) * 2021-04-06 2022-05-01 旺宏電子股份有限公司 半導體結構

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* Cited by examiner, † Cited by third party
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KR100655078B1 (ko) * 2005-09-16 2006-12-08 삼성전자주식회사 비트 레지스터링 레이어를 갖는 반도체 메모리 장치 및그의 구동 방법
US8294098B2 (en) 2007-03-30 2012-10-23 Tsinghua University Transmission electron microscope micro-grid
US8558220B2 (en) * 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
CN102265400A (zh) * 2008-10-23 2011-11-30 桑迪士克3D有限责任公司 展示减少的分层的基于碳的存储器元件和形成其的方法
KR20100052080A (ko) * 2008-11-10 2010-05-19 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
JP2010123646A (ja) * 2008-11-18 2010-06-03 Toshiba Corp 電気素子、スイッチング素子、メモリ素子、スイッチング方法及びメモリ方法
US8114765B2 (en) 2008-12-31 2012-02-14 Sandisk 3D Llc Methods for increased array feature density
US8084347B2 (en) * 2008-12-31 2011-12-27 Sandisk 3D Llc Resist feature and removable spacer pitch doubling patterning method for pillar structures
US8023310B2 (en) * 2009-01-14 2011-09-20 Sandisk 3D Llc Nonvolatile memory cell including carbon storage element formed on a silicide layer
JP4829320B2 (ja) * 2009-03-17 2011-12-07 株式会社東芝 不揮発性半導体記憶装置の製造方法
CN101848564B (zh) 2009-03-27 2012-06-20 清华大学 加热器件
US7955981B2 (en) * 2009-06-30 2011-06-07 Sandisk 3D Llc Method of making a two-terminal non-volatile memory pillar device with rounded corner
CN101991364B (zh) 2009-08-14 2013-08-28 清华大学 电烤箱
CN101998706B (zh) 2009-08-14 2015-07-01 清华大学 碳纳米管织物及应用该碳纳米管织物的发热体
PE20121148A1 (es) 2009-08-17 2012-09-07 Intellikine Llc Compuestos heterociclicos y usos de los mismos
CN102019039B (zh) 2009-09-11 2013-08-21 清华大学 红外理疗设备
JP5611574B2 (ja) 2009-11-30 2014-10-22 株式会社東芝 抵抗変化メモリ及びその製造方法
US9096590B2 (en) 2010-05-24 2015-08-04 Intellikine Llc Substituted benzoxazoles as PI3 kinase inhibitors
WO2012116237A2 (en) 2011-02-23 2012-08-30 Intellikine, Llc Heterocyclic compounds and uses thereof
CN104613545B (zh) * 2015-02-02 2017-05-10 广东美的制冷设备有限公司 空调器室内机及空调器的出风控制方法
CN104613620B (zh) * 2015-02-02 2017-05-10 广东美的制冷设备有限公司 空调器及其出风控制方法
CN113194752A (zh) 2018-06-01 2021-07-30 康奈尔大学 Pi3k相关疾病或病症的组合疗法

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US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
CN1849718A (zh) * 2003-07-09 2006-10-18 先进微装置公司 存储器件和使用及制造该器件的方法
JP4448356B2 (ja) * 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
JP2005343744A (ja) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd カーボンナノチューブ半導体の製造方法およびカーボンナノチューブ構造体
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US20060273298A1 (en) * 2005-06-02 2006-12-07 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a transistor and resistance-switching material in series
JP4975289B2 (ja) * 2005-09-06 2012-07-11 国立大学法人名古屋大学 カーボンナノウォールを用いた電子素子
JP6114487B2 (ja) * 2006-08-08 2017-04-12 ナンテロ，インク． メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI749273B (zh) * 2018-07-18 2021-12-11 南亞科技股份有限公司 動態隨機存取記憶體結構及其製備方法
TWI763443B (zh) * 2021-04-06 2022-05-01 旺宏電子股份有限公司 半導體結構
US11502105B2 (en) 2021-04-06 2022-11-15 Macronix International Co., Ltd. Semiconductor structure and a method for manufacturing the same

Also Published As

Publication number Publication date
EP2140492A1 (en) 2010-01-06
CN101681921A (zh) 2010-03-24
CN101681921B (zh) 2013-03-27
WO2008118486A1 (en) 2008-10-02
KR20100014547A (ko) 2010-02-10
JP2010522991A (ja) 2010-07-08

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