JP2010522991A - カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法 - Google Patents

カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法 Download PDF

Info

Publication number
JP2010522991A
JP2010522991A JP2010500999A JP2010500999A JP2010522991A JP 2010522991 A JP2010522991 A JP 2010522991A JP 2010500999 A JP2010500999 A JP 2010500999A JP 2010500999 A JP2010500999 A JP 2010500999A JP 2010522991 A JP2010522991 A JP 2010522991A
Authority
JP
Japan
Prior art keywords
memory cell
carbon nanotube
conductor
monolithic
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010500999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010522991A5 (https=
Inventor
ハーナー，エス．ブラッド
イー． シャーエウエルライン，ロイ
Original Assignee
サンディスク スリーディー，エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/692,148 external-priority patent/US7982209B2/en
Priority claimed from US11/692,144 external-priority patent/US7667999B2/en
Application filed by サンディスク スリーディー，エルエルシー filed Critical サンディスク スリーディー，エルエルシー
Publication of JP2010522991A publication Critical patent/JP2010522991A/ja
Publication of JP2010522991A5 publication Critical patent/JP2010522991A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2010500999A 2007-03-27 2008-03-26 カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法 Pending JP2010522991A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/692,148 US7982209B2 (en) 2007-03-27 2007-03-27 Memory cell comprising a carbon nanotube fabric element and a steering element
US11/692,144 US7667999B2 (en) 2007-03-27 2007-03-27 Method to program a memory cell comprising a carbon nanotube fabric and a steering element
PCT/US2008/004018 WO2008118486A1 (en) 2007-03-27 2008-03-26 Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same

Publications (2)

Publication Number Publication Date
JP2010522991A true JP2010522991A (ja) 2010-07-08
JP2010522991A5 JP2010522991A5 (https=) 2011-04-21

Family

ID=39590778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010500999A Pending JP2010522991A (ja) 2007-03-27 2008-03-26 カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法

Country Status (6)

Country Link
EP (1) EP2140492A1 (https=)
JP (1) JP2010522991A (https=)
KR (1) KR20100014547A (https=)
CN (1) CN101681921B (https=)
TW (1) TW200903782A (https=)
WO (1) WO2008118486A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009517787A (ja) * 2005-09-16 2009-04-30 サムスン エレクトロニクス カンパニー リミテッド ビットレジスターリング層を有する半導体メモリ装置及びその駆動方法
JP2010123646A (ja) * 2008-11-18 2010-06-03 Toshiba Corp 電気素子、スイッチング素子、メモリ素子、スイッチング方法及びメモリ方法
JP2011119296A (ja) * 2009-11-30 2011-06-16 Toshiba Corp 抵抗変化メモリ及びその製造方法
JP2012514339A (ja) * 2008-12-31 2012-06-21 サンディスク スリーディー，エルエルシー 柱状構造のためのレジストフィーチャおよび除去可能スペーサピッチを倍増するパターニング法
JP2012532450A (ja) * 2009-06-30 2012-12-13 サンディスク スリーディー，エルエルシー 丸いコーナーを有する複数の柱を備えるクロスポイント形不揮発性メモリ装置およびその製造方法
US8658526B2 (en) 2008-12-31 2014-02-25 Sandisk 3D Llc Methods for increased array feature density

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8294098B2 (en) 2007-03-30 2012-10-23 Tsinghua University Transmission electron microscope micro-grid
US8558220B2 (en) * 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
CN102265400A (zh) * 2008-10-23 2011-11-30 桑迪士克3D有限责任公司 展示减少的分层的基于碳的存储器元件和形成其的方法
KR20100052080A (ko) * 2008-11-10 2010-05-19 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
US8023310B2 (en) * 2009-01-14 2011-09-20 Sandisk 3D Llc Nonvolatile memory cell including carbon storage element formed on a silicide layer
JP4829320B2 (ja) * 2009-03-17 2011-12-07 株式会社東芝 不揮発性半導体記憶装置の製造方法
CN101848564B (zh) 2009-03-27 2012-06-20 清华大学 加热器件
CN101991364B (zh) 2009-08-14 2013-08-28 清华大学 电烤箱
CN101998706B (zh) 2009-08-14 2015-07-01 清华大学 碳纳米管织物及应用该碳纳米管织物的发热体
PE20121148A1 (es) 2009-08-17 2012-09-07 Intellikine Llc Compuestos heterociclicos y usos de los mismos
CN102019039B (zh) 2009-09-11 2013-08-21 清华大学 红外理疗设备
US9096590B2 (en) 2010-05-24 2015-08-04 Intellikine Llc Substituted benzoxazoles as PI3 kinase inhibitors
WO2012116237A2 (en) 2011-02-23 2012-08-30 Intellikine, Llc Heterocyclic compounds and uses thereof
CN104613545B (zh) * 2015-02-02 2017-05-10 广东美的制冷设备有限公司 空调器室内机及空调器的出风控制方法
CN104613620B (zh) * 2015-02-02 2017-05-10 广东美的制冷设备有限公司 空调器及其出风控制方法
CN113194752A (zh) 2018-06-01 2021-07-30 康奈尔大学 Pi3k相关疾病或病症的组合疗法
US10580778B2 (en) * 2018-07-18 2020-03-03 Nanya Technology Corporation Dynamic random access memory structure and method for preparing the same
US11502105B2 (en) * 2021-04-06 2022-11-15 Macronix International Co., Ltd. Semiconductor structure and a method for manufacturing the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285821A (ja) * 2004-03-26 2005-10-13 Fujitsu Ltd 半導体装置およびその製造方法
JP2005343744A (ja) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd カーボンナノチューブ半導体の製造方法およびカーボンナノチューブ構造体
WO2006121837A2 (en) * 2005-05-09 2006-11-16 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
WO2006122111A2 (en) * 2005-05-09 2006-11-16 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
JP2007073715A (ja) * 2005-09-06 2007-03-22 Univ Nagoya カーボンナノウォールを用いた電子素子
WO2008021900A2 (en) * 2006-08-08 2008-02-21 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
CN1849718A (zh) * 2003-07-09 2006-10-18 先进微装置公司 存储器件和使用及制造该器件的方法
US20060273298A1 (en) * 2005-06-02 2006-12-07 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a transistor and resistance-switching material in series

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285821A (ja) * 2004-03-26 2005-10-13 Fujitsu Ltd 半導体装置およびその製造方法
JP2005343744A (ja) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd カーボンナノチューブ半導体の製造方法およびカーボンナノチューブ構造体
WO2006121837A2 (en) * 2005-05-09 2006-11-16 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
WO2006122111A2 (en) * 2005-05-09 2006-11-16 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
JP2007073715A (ja) * 2005-09-06 2007-03-22 Univ Nagoya カーボンナノウォールを用いた電子素子
WO2008021900A2 (en) * 2006-08-08 2008-02-21 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009517787A (ja) * 2005-09-16 2009-04-30 サムスン エレクトロニクス カンパニー リミテッド ビットレジスターリング層を有する半導体メモリ装置及びその駆動方法
JP2010123646A (ja) * 2008-11-18 2010-06-03 Toshiba Corp 電気素子、スイッチング素子、メモリ素子、スイッチング方法及びメモリ方法
JP2012514339A (ja) * 2008-12-31 2012-06-21 サンディスク スリーディー，エルエルシー 柱状構造のためのレジストフィーチャおよび除去可能スペーサピッチを倍増するパターニング法
US8637389B2 (en) 2008-12-31 2014-01-28 Sandisk 3D Llc Resist feature and removable spacer pitch doubling patterning method for pillar structures
US8658526B2 (en) 2008-12-31 2014-02-25 Sandisk 3D Llc Methods for increased array feature density
JP2012532450A (ja) * 2009-06-30 2012-12-13 サンディスク スリーディー，エルエルシー 丸いコーナーを有する複数の柱を備えるクロスポイント形不揮発性メモリ装置およびその製造方法
JP2011119296A (ja) * 2009-11-30 2011-06-16 Toshiba Corp 抵抗変化メモリ及びその製造方法

Also Published As

Publication number Publication date
EP2140492A1 (en) 2010-01-06
TW200903782A (en) 2009-01-16
CN101681921A (zh) 2010-03-24
CN101681921B (zh) 2013-03-27
WO2008118486A1 (en) 2008-10-02
KR20100014547A (ko) 2010-02-10

Similar Documents

Publication Publication Date Title
US7982209B2 (en) Memory cell comprising a carbon nanotube fabric element and a steering element
US7667999B2 (en) Method to program a memory cell comprising a carbon nanotube fabric and a steering element
JP2010522991A (ja) カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法
JP5735271B2 (ja) 大きくて一様な電流を有する上向きｐｉｎダイオードの大型アレイとそれを形成する方法
US7767499B2 (en) Method to form upward pointing p-i-n diodes having large and uniform current
US20090086521A1 (en) Multiple antifuse memory cells and methods to form, program, and sense the same
US20060157683A1 (en) Nonvolatile phase change memory cell having a reduced thermal contact area
US20090168507A1 (en) Method of programming cross-point diode memory array
JP2009517863A (ja) ニッケル−コバルト酸化物切換素子を含むメモリセル
JP2008546213A (ja) アンチヒューズとしてのダイオードを備える一度にプログラム可能なクロスポイントメモリ
JP5695417B2 (ja) 逆方向リークが減少した３次元の読み書きセルとそれを作る方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110301

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110301

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130312

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130610

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131203

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140708