TW200903758A - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the same Download PDFInfo
- Publication number
- TW200903758A TW200903758A TW097123671A TW97123671A TW200903758A TW 200903758 A TW200903758 A TW 200903758A TW 097123671 A TW097123671 A TW 097123671A TW 97123671 A TW97123671 A TW 97123671A TW 200903758 A TW200903758 A TW 200903758A
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- Prior art keywords
- bonding
- gallium
- substrate
- semiconductor device
- heating
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- Wire Bonding (AREA)
Description
200903758 九、發明說明: 【發明所屬之技術領域】 關於—種半導料m半導體裝置之製 仏方法’及更特定而言’係關於—種透過覆 連接裝置半導體元件的半導體$ c lp 裝置半導體元μ半導體覆晶連接 【先前技術】 奴者+導體元件之積體的增加及半導體裝置 減小,通常使用透過覆晶連接裂置半導體元件的方法 於透過覆晶連接將半導體元件裝置於基板上之方法,係將 包括金凸塊作為連接凸塊之半導體元件焊接及裝置在形 成於基板上的連接焊墊上(例如,參見專利文件丨及2)。 利用金凸塊將半導體元件裝置於基板上之方法包括將 焊料粉末黏著至形成於基板上之連接焊墊上且使連接焊 墊與金凸塊對準,及實施加熱至焊料粉末熔融之溫度,因 而進行焊料黏接的方法(專利文件3),及預先將下填樹脂 供給至基板,使金凸塊與連接焊墊對準而對半導體元件施 加超θ波振動,及對其施壓以使金凸塊黏接至連接焊墊的 方法。 [專利文件 1] JP-A-8-31835 [專利文件 2] JP-A-2007-27526 [專利文件 3] JP-A-2003-7902 使用將焊料粉末黏著至連接焊墊及透過桿料黏接將金 凸塊黏接至連接焊墊的方法於製造其中以5〇至6〇微米之 97123671 6 200903758 相當小節距設置連接焊墊的半導體裝置。於焊料黏接步 驟,使用諸如 Sn-3. 5Ag(熔點 221。(:)及 Sn-3Ag-0. 5Cu(熔 點217至220 C )的無鉛焊料,以降低對環境的負荷。無 鉛焊料具有較鉛基焊料高的熔點,且其係使用在較熔點高 大約30°C之大約25(TC之高溫下的加熱。 當半導體it件如此在高溫下黏#至基才反且溫度降至室 溫時,存在半導體裝置因半導體元件之熱膨脹係數(2 3 ΡΡίπ/Κ)與由有機基板形成之基板之熱膨脹係數(2〇至6〇 ppm/K)之間的差異而完全變形龜曲的問題。 圖6說明性地展示半導體元件10及基板2G之溫度於焊 料黏接後降至室溫的狀態。形成於半導體元件ι〇之電極 上的金凸塊12透過焊料14黏接至形成於基板2()上 ^妾烊塾22。基板2〇具有較半導體元件1()高的熱膨服係 數。因此’當溫度降至室溫時,基板2G較半導體元件 更大程度地收縮’且在金凸塊12與連接桿塾22 t 使黏接部分斷裂的力。 丰2過^日連接裝置半導體元件時,將下填樹脂填補於 虹70。基板之間’以透過T填樹料gj地固定住半 與基板的轉料,及簡金凸塊與連接焊塾的 古。刀不使其剝離。在焊料黏接後溫度下降前進行下埴 產當於高溫下進行下填時易於下填樹脂中產生 §產生空隙時下填的功能會大大地劣化。 接連接痒墊的設置節距降為5g至60微米時,連 >、見度必然降低。因此’亦會有金凸塊與連接焊墊 97123671 200903758 之黏接面積減小且黏接強度因此降低,且黏接部分易因自 熱應力施加之外力而破裂的問題。 此外,右半導體元件係在於金凸塊與連接焊墊之間存在 應力的狀態下裝置,則亦會有於黏接部分中產生異常擴散 因此形成晶須,導致黏接部分於裝置後隨時間經過而不完 全電連接的問題。 【發明内容】 本發明係要解決該等問題,且其之一目的為提供一種半 導體裝置及-種半導體裝置之製造方法,其可降低將半導 體疋件覆晶連接至基板時的黏接溫度,因 溫度降至室溫時作用於半導體元件與基板之二自= 力’且增進半導體元件與基板的黏接可靠度。 為達成目的,本發明具有以下結構。 根據本發明之第一態樣,提供一種半導體裝置, 基板; 透過覆晶連接位於基板上的半導體元件; 形成於半導體元件上的連接凸塊;及 設置於基板上之連接焊墊,其中, 忒連接凸塊及該連接焊墊係利用呈固體溶液狀態之鎵 (Ga)或銦(In)作為黏接材料而彼此黏接。 此外’根據本發明之第二態樣,提供—種透過覆晶連接 將半導體元件裝置於基板上之半導體裝置之製造方法’复 包括以下步驟: 〃 將作為黏接材料之呈固體溶液狀態的鎵包覆至形成於 97123671 200903758 基板表面上的連接焊墊;及 使形成於半導體元件上之連接凸塊與連接焊墊對準,且 透過呈固體溶液狀態之點接材料在加熱下,將連接凸塊黏 接至連接焊墊。 將鎵以固體溶液狀態包覆至連接焊墊之步驟意謂將不 相似的金屬混入鎵中,且將鎵以固體溶液之狀態包覆至連 接焊塾。關於包覆呈固體溶液狀態之鎵的方》,可利用濺 鍍方法或電鍍方法。 此外,根據本發明之第三態樣,提供根據第二態樣之半 導體裝置之製造方法,其中, 將作為黏接材料之呈固體溶液狀態的鎵包覆至連接焊 墊的步驟包括: 將作為黏接材料之鎵包覆至形成於基板表面上之連接 焊塾的步驟,及 丑使銅自由銅所形成之連接焊墊透過在真空中加熱而擴 散^黏接材料巾’且使錁與銅達到固體溶液狀態的步驟。 藉由在真空中加熱,可使銅自連接焊塾擴散至鎵中,而 容易地使鎵達到固體溶液狀態。 、此外,根據本發明之第四態樣,提供根據第三態樣之 導體裝置之製造方法,其中, 々使連接凸塊黏接至連接焊墊之步驟的加熱溫度係設為 等於或低於透過在真空中加熱使鎵達到固體 步驟中的加熱溫度。 〜、之 因此,可無需過度地熔融鎵,而使凸塊可靠地黏接至連 97123671 200903758 接焊塾。 此外,根據本發明之第五態樣,提供根據第三態樣之半 導體裝置之製造方法,其中, 填補及熱固化下填樹脂時之加熱溫度係設為比透過在 真空中加熱使鎵達到固體溶液狀態之步驟的加熱溫度低。 此外,根據本發明之第六態樣,提供根據第二至第五態 樣中任一態樣之半導體裝置之製造方法,其中, 該半導體元件包括金凸塊作為連接凸塊,及 該金凸塊及該連接焊墊係透過作為黏接材料呈固體溶 液狀態之鎵而彼此黏接。 此外,根據本發明之第七態樣,提供根據第二至第六態 樣中任一態樣之半導體裝置之製造方法,其進一步包括: 於使連接凸塊黏接至黏接材料之步驟後,在半導體元件 與基板之黏接部分中填補下填樹脂,及使下填樹脂熱固化 的下填步驟。 此外,根據本發明之第八態樣,提供根據第二至第六態 樣中任一態樣之半導體褒置之製造方法,其進-步包括二 於透過在真$中加熱使鎵達到固Μ溶液&態之步驟 後,將下填樹脂供給至基板的步驟,及 將連接凸塊純至呈㈣溶液㈣之黏 熱中使下填樹腊熱固化之步驟。 及於加 2據本發明之半導體裝置及半導體裝置之製造方法,半 ν -=件係㈣使用鎵或銦作為黏接材料而裝置。因此, 可在較使用習知無鉛焊料之情況中低的溫度下覆晶連接 97123671 200903758 半導體元件,而使於半導體元件與基板之間所產生的熱應 力鬆弛,因而增進半導體元件與基板之黏接部分的黏接 罪度。此外,可在較習知技藝中低的溫度下進行覆晶連 接。因此,可進行下填,而不會於樹脂中產生空隙。 【實施方式】 μ 底下將參照附圖詳細說明根據本發明之一較佳具體 (半導體裝置之製造方法) 〃 & 。 圖1顯示利用根據本發明之半導體裝置之製造方法,透 過覆晶連接’將具有金屬凸塊12之半導體元件1G裝置於 基板2 0上之方法。 圖1A顯示將連接焊墊22形成於待於其上裝置 件10之基板2G上的狀態。連接焊塾22係電連接至形成 於基板20上之佈線圖案,且與形成於半導體元件1〇上之 =塊12的平面配置對準並如此配置。將印刷電路板或 積層(bUlld-up)基板使用作為包括連接焊墊22的基板 基板2。之材料及將佈線圖案及連接焊塾形成於基板 Ζ ϋ上之方法並無特殊之限制。 =發明中’將低㈣金屬的鎵(⑻使用作為用於將金 凸塊12黏接至連接焊墊22的黏接材料。 圖广,示將“形成之黏接材料3。包覆至形成於基板 =上之連接焊塾22的狀態。鎵係具有Μ•代之溶點的金 f,且在室溫下U在輕度加熱狀態中)為液體。因此,可 分配法)將液態鎵供給至連接…。鎵係 視連接知墊22之面積及金凸塊之尺寸而以適量供給。在 97123671 11 200903758 此具體例中’鎵係以大約5微米之厚度供給。 關於將鎵供給至連接焊整22之方法,除°分配法之夕卜, 可利用m浸人至液態鎵中之方法(浸潰法)、於真空 室中將鎵沈積於連接焊塾22上之方法(真空沈積法)、及 =電=提供鎵之方法。在使用浸潰法、真空沈積法或電 之隋况中,較佳使其上經形成連接焊墊22之部分自 ^板(加工件)20之表面暴露’及將該部分塗布諸如抗蝕 =保護膜’及將鎵包覆至連接料㈡,然後再移除保 墁膜。 二二顯示在真空室中加熱(真空加熱)加工件之根據本 發明+導體裝置之製造方法中的一特徵步驟。真空加執步 =係要使銅自由銅所形成之連接焊塾22擴散至經包覆至 固22之表面之液態鎵中,因而將鎵轉變為與銅的 囡體 >谷液。 在此具體例中,加工件係於真空中在2〇rc下加埶。告 i =真空中加熱加工件時觀察供給至連接烊墊22之錄的二 二、。結果,觀察到起初為液體之鎵的表面開始凝固且轉變 為固體溶液。 圖4係銅及鎵之狀態目。此狀態圖顯示當鎵且有67原 =至⑽原子%之濃度時,其在29.代或更高溫度下轉 叆為固體溶液(混合固體與液體之狀態)。因此,若 鎵遭度等於或高於67原子%之部分,則會共同存在於^ =更高之溫度下熔融的部分,此就產品的可靠度而並 不佳。 97123671 12 200903758 具體缺下進行加熱時,銅會擴散,且 右蘇具有5微米之厚度,則鉉之矣曲 子"鎵之表面浪度於大約5分鐘内 ^為97核以下。在於朦口進行真空加熱的步驟中, 連接焊墊22之鎵於任何部分中皆具有大約m之 /辰度因此,可推測鎵自液相轉變為固體溶液。雖然 ^此㈣例中係於·。C下進行於真空中之加熱,但可^ 田地選擇在_真空加熱步驟中的加熱溫度及加熱所需時間。 圖1D頌示於真空中加熱加工件,然後使半導體裝置1 〇 與基板20對準,因而將其覆晶連接之步驟。金及鎵具有 使其易於相互且強烈地擴散的性質。在加熱下,金凸塊 12與經包覆由鎵所形成之黏接材料3〇的連接焊墊μ透 過壓力熔接而彼此黏接。 圖5係金及鎵之狀態圖。此狀態圖顯示鎵在67原子九 至100原、+%之濃度下轉變為固體溶液(混合液體與固體 之狀態)。當使液態鎵與金在70t下彼此接觸時,會重度 (地產生相互擴散。因此,為使金凸塊12在固相狀態下ς 接至連接焊墊22,可透過在真空中加熱有效地使銅擴散 至鎵中,及使鎵達到固體溶液之狀態,然後再進行黏接。 在此具體例中,將加工件加熱至15(rc,以使金凸塊12 透過鎵覆晶連接至連接焊墊22。圖1E顯示半導體元件1〇 覆晶連接至基板20之狀態。由鎵形成的黏接材料3〇擴散 至金凸塊12中之球部分與階梯部分之間的邊界附近,且 與其可靠地黏接。 覆晶連接較佳應在等於真空加熱溫度之溫度或較真空 97123671 13 200903758 加熱溫度低之溫度下於加熱下進行。將覆晶連接溫产設為 盡可能地低,以降低在半導體元件1〇與基板2〇之$:生 的熱應力,及防止鎵於覆晶連接中過度熔融。 於半導體元件10覆晶連接至基板2〇#,將下填樹脂 40填補在插置於半導體元件1()與基板2{)之間的 區 域中,並使其固化,以致獲得具有經覆晶連接之半導體元 件10的半導體裝置(圖2)。 f。在此具體例中,下填步驟係藉由將環境溫度維持為150 c之加熱溫度而進行,在此溫度下半導體元件1G覆晶連 接至基板20,且下填樹脂40因此熱固化。在下填樹脂 固化後經由使溫度降至室溫,可增強半導體元件與基 板2 0之黏接部分的黏接可靠度。
亦可將半導體元件10覆晶連接至基板2〇之加熱溫度設 為大約2G(TC,即幾乎等於真空加熱溫度。其理由如下。 覆晶連接所需的時間大約為5至1G #,且鎵與銅之固體 :液於短如間内透過溫度下降而凝固,即使(例如)該固體 ^液熔融亦然。因此,可避免於相鄰的連接焊墊之間產生 電短路$ #面’當要使下填樹脂40熱固化時,需要 1至2 ”的時間。因此,若使下填樹脂40熱固化的溫 又匕又提㈤冑將易於移動,且因此易於相鄰的連接焊塾 之產生電短路。因此’較佳將使下填樹脂熱固化之溫度 設為比使鎵達到固體溶液狀態之加熱溫度低。 在根據此具體例之半導體裝置之製造方法中,將半 元们〇覆晶連接至基板2Q之加熱溫度設為聽。亦可 97123671 14 200903758 將孟與鎵之黏接溫度設為大約i〇『c。在根據本發明方法 =清況乂覆晶連接可在顯著低於習知之覆晶連接溫度的 —、又下進行、纟°果,當覆晶連接之加熱環境中之溫度降至 ί ’於半導體元件1G與基板2G之間視其間之熱膨脹 彩 異而產生的熱應力可較習知技藝之情況更有效地 々弛因此’可降低作用於黏接部分上之破裂力及剝離力 r t增進半導體裝置的可#性,尤其係在電極與半導體元件 中之連接焊墊之間的黏接可靠度。 此外’亦可在相當低的溫度下進行下填。因此,可進行 k當的下填,而不會於下填樹脂中產生空隙。 d已於此具體例中對金凸塊與鎵之黏接性質進行說 可以相同方式將本發明應用至包括由金凸塊以外 -所形成之凸塊(例如’金凸塊以外之鋼凸塊)的半導 二在此情況亦使用鎵作為黏接材料,以致鎵擴散至 5 A ’且凸塊與連接焊墊彼此黏接。 (下填方法) 根據本發明之半導體裝署 牛¥體衣置之製造方法並不限於前述的 方法,而係亦可由其他製造方法進行。更明確t之, 2虽0然=具體例中係先使半導體元件10覆晶連接至基板 美极^行下填’但亦可採用預先將下填樹脂供給至 土 ,然後再覆晶連接半導體元件1 〇的方法。 ==下填樹脂4。供給至基板20然後再進行 鎵作為與連接焊墊22的黏接材料30, 後使銅透過於真空中之加熱擴散至錄中,且達到録表面 97123671 15 200903758 二:固之狀態,然後再供給下填樹脂4〇。使用不會與 至=應的樹月旨材料作為下填樹脂4〇。將下填樹脂4〇供給 基f 20,然後使金凸塊12與連接焊墊22對準,且在 凸境中使半導體元件1GM力炫接至基板2G,以致金 2與連接焊墊22透過鎵而彼此黏接。 =預先供給下填樹脂4G至基板2G以進行覆晶連接的方 旦㈣連接谭塾與金凸塊的黏接性質成為問題。在根據此 法的情況中’金凸塊及鎵具有使其可容易地相 ,的重要性質。因此,在預先供給下填樹脂40的方 户點亦=連接22及金凸塊12能彼此可靠地黏接的 與使用習知之sn★黏接材料的情況相比, 接可在較低溫度下進行。因此,其有可以相同方式 降低於半導體元件Π)與基板2G之 之效果的優點。 ‘、、、m力 (使用作為黏接材料的低熔點金屬材料) 月j所it鎵在至溫附近成為液相,且成為液相的録與 h重j地相互擴散。因此,使用嫁透過相變化成固體 /谷液之狀態而作為斑技U女丨 接材枓。在真空加熱方法中,連接焊 —之銅擴政至鎵申,以致鎵自液相改變為固體溶 A 由使不相似的金屬(例如,1n、Bi、Sb或Zn)擴 I 巾將鎵變為固體溶液。在此情況,當要使由鎵 22時(…所i之=幵:成於基板2… _合至鎵中二:較佳在將不相似的金屬以大 勺狀態下進行包覆。將不相似的金屬混 97123671 16 200903758 2鎵中及將其黏著的方法包括利用將不相似的金屬混 。、鎵中之㈣’透過_進行形成的方法,以及進行電 二十達到將鎵及不相似的金屬混合於電鍍薄膜中之狀態 的方法。 此外’關於在透過鎵將金凸㈣接至連接焊塾之後,抑 ^鎵^擴散至金凸塊中及增進黏接可靠度的方法,將銀 (Ag)此合至鎵中的方法有效。 圖3^顯示由鎵所形成之黏接材料3()黏著至形成於基板 之又面上之連接焊墊22的狀態,此外,將銀層32形 :黏接材料30之表面上。較佳將銀層Μ形 由鎵所形成之黏接材料3〇之厚度(大約5微米)小的厚度 (數百埃)。銀層32可經由濺鍍或電鍍形成。 圖3B顯示Ag透過真空加熱處理自銀層32擴散至由鎵 9 黏接材料30中之狀態,㈣時,Cu自連接焊墊 2擴散至料㈣連接焊塾22之表面上形絲接材料層 4。透過真空加熱處理包覆至連接焊墊22之表面的黏接 材料層34係固體溶液,且使黏接材料層%達到銅( 及銀(Ag)擴散至作為主要成分之鎵中的狀態。 圖3C顯示半導體元件1〇透過黏接材料層^覆 至基板2G的狀態。形成於半導體元件1()上之金 ΠΓ/…且金凸塊12與呈固體溶液狀態之黏 接材科層34經加熱至使其相互擴散及黏接的溫度。因 此,金凸塊12與連接焊塾22透過黏接材料層%而彼此 黏接。 97123671 17 200903758 在根據此具體例之半導體裝置之製造方法中,銀係包含 於黏接材料中。因此,當使金凸塊12與連接焊墊22彼此 黏接時,可防止金凸塊12與鎵過度地相互擴散。因此, 可使金凸塊12精確地黏接至連接焊墊22。此外,銀係包 含於金凸塊丨2與連接焊墊22的黏接部分中。因此,可抑 制於黏接部分中的異常擴散。結果,可增進金凸塊12與 連接焊墊22的黏接可靠度。 雖然在此具體例中係對使用鎵作為用於使金凸塊12黏 接至連接焊墊22之黏接材料的實例作說明,但亦可使用 ::之外的金屬(例如,銦(ίη))作為可在較習知之 料低之溫度下進行黏接的低炫點金屬材料。經由使 二=點金屬於將半導體元件1〇覆晶連接至基板別,可 導體元件與基板之間所產生因此’可使於半 辦_ $,、、'應力鬆弛,因而增進半導 體几件與基板之黏接部分的黏 裝置具有增加密度且且有时了/度。因此’可抑制當 體元件時,導致電短路2小㈣設置之電極的半導 外,卩”離的問題產生。此 進黏接部分的可靠度。 寸+^體几件㈠’可增 【圖式簡單說明】 圖1A至1E係用於說明根摅 法之-實例的圖; 《本發明半導體裝置之製造方 圖2係顯示根據本發明之 構的剖面圖; 裝置之一具體例之結 97123671 200903758 圖3A至3C係用於說明半導體裝置之製造方法之另一實 例的圖, 圖4係銅及鎵之狀態圖; 圖5係金及鎵之狀態圖;及 圖6係顯示習知半導體裝置之結構的剖面圖。 【主要元件符號說明】 10 半導體元件 12 金凸塊 14 焊料 20 基板 22 連接焊墊 30 黏接材料 32 銀層 34 黏接材料層 40 下填樹脂 97123671 19
Claims (1)
- 200903758 十、申請專利範圍: 1. 一種半導體裝置,其包括: 基板; 透過覆晶連接位於基板上的半導體元件; 形成於半導體元件上的連接凸塊;及 设置於基板上之連接焊塾,其中, 該連接凸塊及該連接焊墊係利用呈固體溶液狀態之鎵 (Ga)或銦(in)作為黏接材料而彼此黏接。 2. —種半導體裝置之製造方法,其中透過覆晶連接將半 ¥體元件裝置於基板上’其包括以下步驟: 將作為黏接材料之呈固體溶液狀態的鎵包覆至形成於 基板表面上的連接焊蟄;及 透過呈固體,谷液狀態之黏接材料在加熱下,將連接凸塊黏 使形成於半導體元件上之連接凸塊與連接焊墊對準,且 接至連接焊墊。 如申請專利範圍第2項之半導體裝置之製造方法,其 忒將作為黏接材料之呈固體溶液狀態 焊塾之步驟包括: 之鎵包覆至連接 焊墊的步驟;及 面上之連接97123671 將作為黏接材料之鎵包覆至形成於基板表 20 200903758 中, 使連接凸塊黏接至連接焊墊之步驟的加熱溫度係設為 等於或低於透過在真空中加熱使鎵達到固體溶液狀態之 步驟中的加熱溫度。 5. 如申請專利範圍第3項之半導體裝置之製造方法,其 中, 填補及熱固化下填樹脂時之加熱溫度係設為比透過在 (真空中加熱使鎵達到固體溶液狀態之步驟的加熱溫度低。 6. 如申請專利範圍帛2項之半導體裝置之製造方法,复 中, ,、 該半導體元件包括金凸塊作為連接凸塊,及 該金凸塊與該連接焊墊係透過作為黏接材料呈固體溶 液狀態之鎵而彼此黏接。 7.如申請專利範圍第2項之半導體裝置之製造方法,盆 進一步包括: 八 二 ==鬼黏接至黏接材料之步驟後,在半導體元件 的= 妾部分中填補下填樹脂,及使下填樹脂熱固化 二利範圍第2項之半導體裝置之製造方法,其 於透過在真空中加熱使鎵達到固體溶 後,將下填樹脂供給至基板的步驟;A 厂驟 將連接凸塊黏接至呈固體 熱中使下填樹脂熱固化之步驟液狀心之黏接材料,及於加 97123671
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JP5644286B2 (ja) * | 2010-09-07 | 2014-12-24 | オムロン株式会社 | 電子部品の表面実装方法及び電子部品が実装された基板 |
EP3208028B1 (en) * | 2016-02-19 | 2021-04-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | A method and device for reversibly attaching a phase changing metal to an object |
JP7484268B2 (ja) | 2020-03-18 | 2024-05-16 | 三菱マテリアル株式会社 | 金属部材の仮止め方法、接合体の製造方法、及び、絶縁回路基板の製造方法 |
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