TW200847357A - Integrated circuit package with soldered lid for improved thermal performance - Google Patents

Integrated circuit package with soldered lid for improved thermal performance Download PDF

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Publication number
TW200847357A
TW200847357A TW096144052A TW96144052A TW200847357A TW 200847357 A TW200847357 A TW 200847357A TW 096144052 A TW096144052 A TW 096144052A TW 96144052 A TW96144052 A TW 96144052A TW 200847357 A TW200847357 A TW 200847357A
Authority
TW
Taiwan
Prior art keywords
circuit
integrated circuit
layer
bump metallurgy
solder
Prior art date
Application number
TW096144052A
Other languages
English (en)
Inventor
Zafer Kutlu
Original Assignee
Lsi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lsi Corp filed Critical Lsi Corp
Publication of TW200847357A publication Critical patent/TW200847357A/zh

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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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Description

200847357 九、發明說明： 【發明所屬之技術領域】 =㈣提供—種㈣電路裸晶、積體電路封裝結構 > ”衣&方法，尤指一種有關於可改善積體電路（IC)的設 計與製造。 σ 【先前技術】 在先丽用以封裝覆晶（flip-chip)積體電路裸晶的建 構技，中，一個蓋子（lid)係透過裸晶與蓋子間的熱傳導 [生‘著釗（thermally conductive adhesive)附接至裸晶 的背面。 aa 然而，當積體電路裸晶的尺寸不斷縮減，更高的密度 二更小的a曰片可使得效能更為提升，而更高的效能亦造成 消耗功率增加，從而必須將伴隨增加的熱能自更小的晶片 面積與封裝内排除。 睛芩閱第一圖所示為習知具有熱傳導性黏著劑的覆 晶積體電路封裝的侧視圖。在第一圖中所示為積體電路裸 晶102、熱傳導性黏著劑1〇4、蓋子106、未填滿的樹脂 (underfill ep0Xy ) 1〇8、封蓋樹脂（iid seal epoXy)11〇、 悍接凸塊（solder bump)112、基板114、以及焊球116。 在覆晶積體電路封裝中使用熱傳導性黏著劑1 04的 缺點是熱傳導性黏著劑1 〇4的熱傳導性大約在1至3f/mK (每公尺凱爾文的瓦特數）之間。 此外，黏著劑的接點電阻會使得熱傳導性黏著劑1〇4 的散熱能力降低約50%，因此，當積體電路裸晶丨〇2是 200847357 在功率規格内操作時，積體電路 熱傳二性將不足，應付覆晶封裝的散熱需求盍子_的 求’二需要較高的熱傳導性與傲熱需 黏著充中物提:，的方法是增加熱傳導性 降低敎傳導性增加填充物内容會大幅 '、、、：¥性黏者麵的流動與散熱性質。 104=/nf:的填充物内容會增加熱傳導性黏著劑 ^ 、，或攸積體電路裸晶1〇2剝離的可能性。 子10fi Η卜ή6曰古加的填充物内容不會使得降低裸晶102與蓋 #物肉二有效熱傳導性的接點電阻有所改善。增加的填 产沒辦的另一問題是熱傳導性黏著劑_的厚 度^又辦法降至低於50微米（micron)。 門m了避免使用熱傳導性黏著劑1 g 4所遭遇到的 問通，知體電路封裝可能會省略掉蓋子106。 圖所示為第—圖中的覆晶積體電路封I在沒有 ㈣側視圖。第二圖所示為積體電路裸晶102、未填 滿的树脂108、焊接凸塊（SC)lder bump)112、基板ιΐ4、 以及焊球116。 在弟二圖中，第一圖的封裝的蓋子106與封蓋樹脂 110係被省略以提升積體電路裸晶1〇2的散熱效能。然 而，如果沒有附接蓋子的話，積體電路裸晶丨02有可能在 基板114層級組裝與測試流程中因為處理不慎而損壞，或 被使用者不小心弄壞。 200847357 同樣地，覆晶封裝構造會對積體電路裸晶102造成抗 張應力，由於積體電路裸晶102通常都非常脆弱，些許的 外力/應力就有可能造成積體電路裸晶102碎裂。此外， 通常會在積體電路裸晶102的背表面打上的識別標記也 可能會產生應力集中點，提升裸晶碎裂的危險。 緣是，本發明人有感上述缺失可改善，乃特潛心研究 並配合學理之應用，終於提出一種設計合理且有效改善上 述缺失之發明。 ' 【發明内容】 本發明之主要目的係提供一種積體電路裸晶、積體電 路封裝結構及其製造方法，其克服了先前技術的缺點。 為達上述之目的，本發明提供一種積體電路封裝結 構，包含：一積體電路裸晶，其具有一電路表面及一相對 於該電路表面的背表面；一底層凸塊冶金層，其形成於該 積體電路裸晶之背表面；以及一焊接層，其形成於該底層 凸塊冶金層上。 本發明另提供一種用以製作一積體電路封裝結構的 方法，包含以下的步驟：提供一積體電路裸晶，其具有一 電路表面與一相對於該電路表面的背表面；於該積體電路 裸晶之背表面形成一底層凸塊冶金層；以及於該底層凸塊 冶金層上形成一焊接層。 本發明另提供一種積體電路裸晶，包含：一電路表 面；一背表面，其相對於該電路表面；一底層凸塊冶金層， 其形成於該背表面；以及一焊接層，其形成於該底層凸塊 7 200847357 冶金層上。 本發明另提供一種用以製作一積體電路裸晶的方 法，包含：於一裸晶上形成一電路表面及一相對於該電路 表面的背表面；於該背表面形成一底層凸塊冶金層；以及 於該底層凸塊冶金上形成一焊接層。 本發明具有以下有益效果：在採用相同的覆晶積體電 路封裝技術的情況下，克服了先前技術的缺點。此外，也 可拿來提升其他類型的積體電路封裝之熱傳導性。 " 為使能更進一步了解本發明之特徵及技術内容，請參 閱以下有關本發明之詳細說明及圖式，然而所附圖式僅供 參考與說明用，並非用來對本發明加以限制者。 【實施方式】 以下所描述的較佳方法在採用相同的覆晶積體電路 封裝技術的情況下，克服了先前技術的缺點。此外，以下 所述的方法在所附的申請專利範圍的範疇内，也可拿來提 升其他類型的積體電路封裝之熱傳導性。 第三圖所示為一積體電路裸晶的放大侧視圖，其具有 一形成於該裸晶的背面之額外的底層凸塊冶金。第三圖所 示為積體電路裸晶102與底層凸塊冶金 （underbump metallurgy, UBM)結構 302、304。 每一個底層凸塊冶金（underbump metallurgy，UBM) 結構3 0 2、3 0 4是薄膜介面金屬如欽、銅、以及鎳的多層 沉積或堆疊。在先前技術中的一般覆晶封裝中，底層凸塊 冶金（U B Μ)結構3 0 2係沉積在積體電路裸晶10 2的電路 8 200847357 表面。底層凸塊冶金（UBM)結構302接著會被蝕刻以形 成焊錫突塊，讓積體電路裸晶102與積體電路封裝之間產 生電氣接觸，如第一圖所示。 在一實施例中，除了底層凸塊冶金（UBM)結構302 係沉積在積體電路裸晶102的電路表面外，底層凸塊冶 金（UBM)結構304係沉積在相對於電路表面之積體電路 裸晶102的背面。積體電路裸晶102的背面之底層凸塊冶 金（UBM)結構304可利用形成底層凸塊冶金（UBM)結構 3 0 2的同一技術形成。相對於電路表面的積體電路裸晶 102的背面一般並未電氣地連接至積體電路裸晶内的電 路。然而，在某些實施例中可使用電氣連結連接至背面， 舉例來說，像是接地或者是防電磁干擾屏障（EMI shield) 〇 第四圖所示為第三圖的積體電路裸晶在形成光阻與 蝕刻後的放大侧視圖。在第四圖中所示為積體電路裸晶 102、底層凸塊冶金（underbump metal lurgy，UBM)結構 302、304、光阻層402，以及孔洞404。 在第四圖中，光阻層402係形成於底層凸塊冶金結構 3 0 2之上’並被姓刻而在積體電路裸晶10 2的電路表面形 成孔洞404。積體電路裸晶102的背面之底層凸塊冶金 (UBM)結構304不需要光阻層，然而，在附屬的申請專利 範圍的範疇内，光阻層也可形成於底層凸塊冶金結構上 304，以實行其他的實施例。 第五圖所不為第四圖的積體電路裸晶在形成焊錫凸 9 200847357 塊於電路表面，以及形成一連續焊錫層於背表面底層凸塊 冶金結構後之放大側視圖。在第五圖中所示為底層凸塊冶 金（underbump metallurgy，UBM)結構 302、304、光阻 層402、焊錫凸塊502、以及一焊錫層504。 在第五圖中，焊錫凸塊502係透過光阻層内的孔洞而 被一凸塊形成製程（bumping process)電鍍在底層凸塊冶 金（UBM)結構302上，建立積體電路裸晶102與積體電 路封裝基板間電氣接觸。同樣的製程可用來在沒有光阻的 V 情況下，將連續焊錫層504電鍍於底層凸塊冶金（UBM)結 構304上。經過凸塊形成製程後，舉例來說，光阻層402 會藉由一姓刻製程被移除。 在組裝封裝的過程中，舉例來說，第一圖中的蓋子 106係與焊錫層504，透過在封裝組裝製程中所用的植球 回流製程（bal 1 attach ref low)製程而被焊接至積體電路 裸晶102。蓋子106可利用厚度為，舉例來說，低於五微 米的焊錫層而焊接至積體電路裸晶102的背面。焊錫層 504具有約50-60W/mK的熱傳導性與低接點電阻。因此， 第一圖中的覆晶封裝的散熱能力可提升一個數量級或更 多。 在一實施例中，積體電路封裝包括一具有一電路表面 與一相對於該電路表面的背表面之積體電路裸晶。一底層 凸塊冶金係形成於該背表面。一焊錫層係形成於該底層凸 塊冶金上。 第六圖所示為金屬蓋被焊接至第五圖的積體電路裸 10 200847357 曰曰的％面後白勺一^積體雷敗+4 » 、 為積體電路裸晶1〇2、金屬視圖。在第六圖中所示 封蓋樹脂η。、基板 及-谭鍚層504。 卜錫球116、焊錫凸塊502、以 表二有第轉’所以電路 ，錫請取代，有利於增加熱傳導性，=== ;阻：圭路封咖-圖的二 ”有車乂佺的政熱表現。在—實施例 ’如第五圖之焊錫層5〇4。在其他實施例；’:、焊： 曰可為不連_，像是第七圖的個別焊錫凸塊他。 第七圖所示為第四圖的積體電路裸晶在形 塊於電路表面，而複數個焊錫凸塊形 ，構後的放大側視圖。在第七圖中所示為 日日102、底層凸塊冶金（_結構3〇2、3〇4、光阻 702，以及個別的焊錫層502與7〇4。 曰aw、 在第七圖的實施例中，焊錫層由複數個焊錫 組成，焊錫凸塊704係以如同焊錫凸塊5〇2被電 凸塊冶金⑽)結構302的相同方式，被電鑛至在又積^ 路裸晶102的背面之底層凸塊冶金⑽）結構3〇4电 成凸塊的製程後’ S阻層402與702係藉由，舉形 一蝕刻製程而被移除。在組裝封裝的過程中，舉二， 第-圖中的蓋+ 106係'藉由在封裴組裝製程中 ：: 同植球回流製程而被焊接至積體電路裸晶1〇2的北 11 200847357 第八圖所示為一積俨帝 、 埶器结構丈曰垃—、包 #衣的側視圖，其具有一散 中所示為積體電體未電，^ 脂no、基板114、焊 ，'滿的树脂108、封蓋樹 及一散熱器結構802球116、焊錫凸塊502與704、以 表面朝下。：二：二^中 '裸晶10 2被翻轉，所以電路 為％埶哭 見^歹1中，覆蓋積體電路裸晶102的蓋子 為放先、态、、、吉構8 〇 2。散敎哭έ士播8 η 9日+ 1 ⑽要大的表面芦ϋ 2具有比第一圖的蓋子 塊m而It 熱器結構802係藉由個別的焊錫凸 塊（U4而被焊接至積靜帝 ° 施例中，第-圖所用的 間以提升熱傳導性。基:上=勿胃】皮=錫峨^ F且右士 μ π ι文良弟八圖的積體電路封 以是第二®較佳的散熱表現。散熱器結構 構成:二=兄，狀散熱器，由像是銅或銅合金 丄成於積體電路裸晶102背面的焊 成於弟七圖的底層凸塊冶金（讀）結構3〇4之 上的锼數個焊錫凸塊7〇4所組成。 的41:實施例中，一積體電路裸晶的方法，包含以下 背具有一電路表面與—相對於該電路表面的 入表面之“琶路裸晶；於該背表面形成一底層凸塊户 玉’以及於該底層凸塊冶金上形成_焊錫層。α 口 的丄九圖所示為製作第六圖或第八圖的積體電路封裝 步驟902為流程圖的進入點。 12 200847357 在步驟904中，底層凸塊冶金 冶金形成於第 係猎由將底層凸塊 形成於相對;^311:的電路表面之相同製程，而 對於,路表面之積體電路裸晶的背表面。 在乂驟906,焊錫層係藉由一 層凸塊冶金304之上。焊靜可：衣耘而被形成於底 連續谭锡或m: 為，舉例來說’第五圖的 飞弟七圖的稷數個焊錫凸塊704。 v驟9 0 8為流程圖的離開點。 弟十圖所示為第六圖的積體 (⑽unded i 1 d)的側視圖 ^ 接地盍子 晶1〇2、全屬罢1nft 土 十圖中所不為積體電路裸 焊錫抻η« 未填的樹脂108 '封裝基板114、 ΪΓ二？凸塊5°2、一谭錫層_、非導電性黏 耆沁1004、以及一電氣連結1〇〇6。 在弟十圖中，焊錫層彳⑽9灸 層。在其他實施例中，焊錫層1〇〇2 ^ ^連續焊錫 桿錫凸塊704。全屬二1 1: b為弟七圖的複數個 連接至射壯^猎 導電性黏著劑1004 封衣基板。導電性材料1〇〇6連接金屬蓋⑽至電 妾:=封裝基板m的頂層金屬層内的另- ，導電性黏蓋樹脂或其他的導二= 被應用於封裝基板114上的特定區域，以便將金屬蓋⑽ 電氣連接至-接地面或者是封裝基板114内的連結二 藉由在積體電路裸晶102與金屬蓋1〇6之間使用俨 錫層麗，接地的金屬蓋可被當成積體電路裸晶⑽^ 背面的接地面。 13 200847357 在又另一實施例中，一積體電路裸s勺 與一相對於該電路表面的背表面，曰=括一毛路表面 凸塊冶金係形成於該背表面，一焊 ^圖，不。—底層 塊冶金上。焊錫層可以作為，舉^底層凸 接地面，以及讓裸晶能夠被納入各種^貝方^中路裸晶的 在另一實施例中，製作積體電路 裸晶基板上形成一電路表面與二方:包括於- 如第三圖所示。-底層凸塊冶 以及一烊錫層係形成於該底層凸塊冶金上。又 -欠序t管在Λ述流程圖中說明的方法是以特定的步驟盘 二序執仃，但是這些步驟可以結合、切割 妯 此牟1 的料。除非有特別說明，否則這 驟的次序和分組並非用來限制本發明。 14 200847357 第三f所示為積體電路裸晶具有-形成於f表面之 底層凸塊冶金層的放大側视示意圖； 圖的積體電路裸晶在形成光阻與 第四圖所示為第 韻刻後的放大側視圖 第五圖所示為第四圖的焊錫凸塊形 晶之電路表面及連•接層形成於f表、 金層之放大側視示意圖； 7展層凸塊冶 曰的示為金屬蓋被焊接至第五圖的積體電路裸 日日的月表面後之侧視圖； 保 曰之！所示為焊錫凸塊形成於第四圖的積體電路裸 面及背表面之底層凸塊冶金層的放大側視圖稞 的背:二為散熱件焊接至第七圖的積體電路裸晶 結構的流作弟六圖或第八圖的積體電路封裝 第十圖所示為第六圖的積體 的金屬蓋蓋之側視圖。 ％封衣、、、口構與—接地 【主要元件符號說明】 [習知] 第一圖 積體電路裸晶102 熱點著劑1〇4 蓋子106 15 200847357 未填滿的樹脂108 封蓋樹脂110 焊錫凸塊112 基板114 焊錫球116 第二圖 積體電路裸晶102 未填滿的樹脂108 焊錫凸塊112 基板114 焊錫球116 [本發明] 第三圖 積體電路裸晶102 底層凸塊冶金結構302 底層凸塊冶金結構3 0 4 第四圖 積體電路裸晶102 底層凸塊冶金結構3 0 2 底層凸塊冶金結構304 16 200847357 光阻層402 孔洞404 第五圖 積體電路裸晶102 底層凸塊冶金結構302 底層凸塊冶金結構3 0 4 光阻層402 焊接凸塊502 焊接層504 第六圖 積體電路裸晶102 金屬蓋106 未填滿的樹脂108 封蓋樹脂110 焊接凸塊112 基板114 焊球116 焊接凸塊502 焊接層504 第七圖 17 200847357 積體電路裸晶102 底層凸塊冶金（UBM)結構302 底層凸塊冶金（UBM)結構304 光阻層402 焊接凸塊502 光阻層702 焊接凸塊704 第八圖 積體電路裸晶102 未填滿的樹脂108 封蓋樹脂110 基板114 焊球116 焊接凸塊502 焊接凸塊704 散熱件802。 第九圖 902開始 904形成底層凸塊冶金於相對於電路表面之積體電 路裸晶的背表面。 9 0 6形成焊接層於底層凸塊冶金上 18 200847357 908結束 第十圖 積體電路裸晶102 金屬蓋106 未填滿的樹脂10 8 基板114 … 焊球116 焊接凸塊502 焊接層1002 非導電性黏著劑1004 電氣連結部1006 19

Claims (1)

  1. 200847357 十、申請專利範圍： 1、一種積體電路封裝結構，包含： 一積體電路裸晶，其具有一電路表面及— 路表面的背表面； 相斜於該電 面；=層凸塊冶金層’其形成於該積體電路裸晶之背表 一焊接層，其形成於該底層凸塊冶金層上。 包二全1封裳結構，更 冶金層’该至屬盖與該焊接層被焊接於該底層凸塊 勺人X如申請專利範圍第2項之積體電路封裝H舌 ^ 3 土板，該基板被鎖固於該金屬蓋。 χ、σ ，更 勺人4二如申請專利範圍第3項之積體電路封f s 包含一電氣連結部，該電氣連結部 于衣：構，更 裝基板之間。 小成於及金屬蓋與該封 包^二項之積體電路封裝結構，更 體電路裸晶的背面之°間以連結料成於該金屬蓋與該積 包含申請專利範圍第3項之積體電路封裝社構，更 Ά者制，該黏著劑連接該基板於該金屬二構更 20 200847357 9、如申請專利範圍第8項之積體電路 包含一散熱物質，該散熱物質設置於該些焊接^ =冓，更 ^0、如中請專利範圍第i項之積體電路封==° 3 -散熱件，該散熱件被焊接至該積體裸曰。」 表面之底層凸塊冶金層。 稞日日的月 1 1、-種用以製作一積體電路封裝 含以下的步驟·· 〕万去，包 提供—積體電路裸晶，其具有一電路 该電路表面的背表面； 〃相對於 於該積體電路裸晶之背表面 層；以及 战底層凸塊冶金 於該底層凸塊冶金層上形成—焊接層。 1 2如申凊專利範圍第1 1 f電路料結構的方法，更包含將」全屬^=作-積 接至该底層凸塊冶金層的—步驟。 〜、叫接層焊 1 3、如申請專利範圍第丄2 :電路封裝結構的方法，更 」以製作一積 的一步驟。 I板固接至該金屬蓋 體電…製作-積 形成一電氣連結部的一步驟。、Mi屬盍與該基板之間 1 5如申睛專利範 體電路封裝結構的方法貝所述之用以製作-積 裸晶的背表面之 匕3於该金屬蓋與該積體電路 面之間形成—電氣連結部的_㈣貝版电路 21 200847357 雕+ ^ 6如申請專利範圍第1 3項所述之用 體電路封裝結構的方法，更包 =用μ製作一積 劍，將該基板鎖固至該金屬蓋的：步：乳傳導性的黏著 體電S裝如:二專方Τ:。1項所… 桿接層的-步驟 更包含將該焊接層形成為一連續 1 8、如申請專利範圍第1 1項所沭 體電路封裝έ士播沾士、I k之用以製作一積 岭钌衣、、.0構的方法，更包含將該焊 丈于接凸塊的—步驟。 9心成為複數個 1 9、如申請專利範圍第工丄項所述 胧電路封裝結構的方法，f肖入 用乂衣作一積 散熱物質的—步:方法更包福些焊接凸塊間設置- ^ 2 〇、如申請專利範圍第1丄項所述之 路封裝結構的方法，更包含將一散熱 %體電路裸晶㈣表面之底層凸塊冶金層的—步ζ成於 21、一種積體電路裸晶，包含： 一電路表面； 一为表面’其相對於該電路表面； 一底層凸塊冶金層，其形成於該背表面；以及 一焊接層，其形成於該底層凸塊冶金層上。 2 2、一種用以製作一積體電路裸晶的方法，包含： 的背稞晶上形成—電路表面及—相對於該電路表面 ;以及 於該背表面形成一底層凸塊冶金層 22 200847357 於該底層凸塊冶金上形成一焊接層。 f % ί 23
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