TW200845271A - Hybrid composite wafer carrier for wet clean equipment - Google Patents

Hybrid composite wafer carrier for wet clean equipment Download PDF

Info

Publication number
TW200845271A
TW200845271A TW96149331A TW96149331A TW200845271A TW 200845271 A TW200845271 A TW 200845271A TW 96149331 A TW96149331 A TW 96149331A TW 96149331 A TW96149331 A TW 96149331A TW 200845271 A TW200845271 A TW 200845271A
Authority
TW
Taiwan
Prior art keywords
substrate
carrier
patent application
opening
support
Prior art date
Application number
TW96149331A
Other languages
English (en)
Other versions
TWI423369B (zh
Inventor
Wing Lau Cheng
Arnold Kholodenko
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200845271A publication Critical patent/TW200845271A/zh
Application granted granted Critical
Publication of TWI423369B publication Critical patent/TWI423369B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/26—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/04—Layered products comprising a layer of synthetic resin as impregnant, bonding, or embedding substance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/28—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer impregnated with or embedded in a plastic substance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/90—Supporting structure having work holder receiving apertures or projections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/901—Collapsible or foldable work holder supporting structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23—Sheet including cover or casing
    • Y10T428/237—Noninterengaged fibered material encased [e.g., mat, batt, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
    • Y10T428/24994—Fiber embedded in or on the surface of a polymeric matrix
    • Y10T428/24995—Two or more layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y10T428/31515—As intermediate layer

Description

200845271 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種濕式清洗設備用之混雜複合晶圓載具。 【交叉參考之相關申請案】 本申請案主張優先權於2006年12月21 η担山士 時專利申請案第60/876,631號，其發明名稱美國臨 之混雜複合晶_具」（HybH仙_S1 te f ΐ用
Clean Equipment)，在此併入作為參考。 r 〇rWet
作為翏考·於2002年i2月3日頒證給De LaH 利第6,488，_號，發明名稱為「單晶圓清潔及乾二 近接頭」（Capi 1 lary proximity heads f0r single waf '、、.吕 and drying);於 2002 年 12 月 24 日提出I i lC ng 第麵，843號，發明名稱為「彎液面、直；、以案 (Meniscus, Vacuum, I PA Vapor, Drying Manifold) Ϊ於ίΠ月「24日提出申請之美國專利中請案第1G/330, 897 ^ ^月名無為利用幫、液面、真空、異丙醇蒸氣、乾燥歧管的 (System for Substrate Processing with eniscus，acuum，IPA Vapor，Drying Manifold);於 2003 年 3 3 3「1日提出，請之美國專利申請案第1〇/綱，692號，發明名稱 ，利用動祕體彎液面之基板處理方法與系統」（Methc)ds — Systems for processing a Substrate Using a Dynamic Liquid eniscus)，於2004年4月1日提出申請之美國專利申請案第 10/817, 620號，發明名稱為「基板彎液面形界面及其操作方法」 (Substrate Meniscus Interface and Methods for Operation)； ，2006年f月29日提出申請之美國專利申請案第n/537,5〇1 號，發明名稱為「用以使由處理基板用之彎月形所留下之入口及/ 或出口痕跡減少的支持構件」（Carrier Reducing Entrance 5 200845271 and/or Exit Marks Left By a Substrate-Process in. Meniscus)； 及於2006年12月15日搵ψ由咬+ 古 s ^ 轳，菸日0β i「人誕出申研之美國專利申請案第11/639,752 fi!% ft广工程用之受控制的周圍系統」(c〇血^
Ambient System for Interface Engineering) 〇 【先前技術】 料ίίίΐίίί^產業巾，完成—製造程序之後，會有不 jiimt表面上’而有必要清洗及乾燥該基板。 牛例匕括電漿蝕刻(例如，鎢回蝕(WEB，tungsten ίi ί i 械研磨(CMP)。在cmp中’基板置於一支座中， tiiii面ΐ該支座推擠而頂住研磨表面。該研磨表面使用一 g=雜料所喊之研漿。不幸的是，gmp製程易將研漿 粒子之累積物及殘餘物殘留在基板表面上。若留在基板上，這些 i in留材料與粒子可導致缺陷。在某些情況下，如此缺陷^ =二ϊίΐ裝置無法操作。在"'製造程序後清洗基板去除了 不要的殘餘物與微粒，避免該缺陷的發生。 、生、細、六f板㈣、式清洗後，該基板必須有效地乾燥，以防止水或 體^於後文，「流體」）的水痕將殘餘物殘留在基板上。如讓 机體通常因液滴（droplets)的形成而在基板表面上蒸發，則 瘵發後，/之别溶解在流體中的殘餘物或污染物將繼續留在基板 二=上、’形成斑點。為防止蒸發的發生，該清潔流體必須盡快地 私除，以免其在基板表面上形成液滴。為了試圖達成此目的，可 使^數個不同技術中的—種，例如自旋乾燥法㈤.的㈣、異 =醇（IPA，isopropyl alcohol)蒸氣乾燥法、或馬蘭格尼乾燥法 ^a^angoni drying)。所有這些乾燥技術使用基板上某種移動液 體ί氣t介面，若經適當維持，則乾燥該基板時不形成液滴。不幸 的是’前述所有乾燥方法通常會發生移動液體/氣體介面失效，而 使液滴形成且蒸發產生，造成污染物殘留在基板表面上。 現行的基板載具並不具有如此預期的屬性組合，即在清洗及 6 200845271 其他處理步驟時之傳輸基板的過程中，、 成。雲於前述，吾人有必要改善清洗系‘mug 率之清洗之際，減少乾燥後流體液滴之水痕^r能性在μ、有效 【發明内容】 大體上說，為滿足前述需求，本發明在一織 過程中，提供一載具結構及其製造方法來支俨曰弓口处土 、
:如$ 明之數個發明性實施例之 在-實施射，設有-載具結_以切— ίί;?Γϊ:巧具穿過至少由一個近接頭賴之 =載具=-框力木（frame)，該框架具有一標定大小的開口部用以 接受-基板，以及數個支稽銷用以支撐在開口部_基板，P且該 ΓΛ比-基板ii’以ί基板與F扣部間存在—_(_)。該; 木匕3 —稷δ核心口P(COmp〇Site c〇re)、一頂部板片（t sheet)、一底部板片（bottom sheet)、一介於頂部板片與核心 間之芳香族聚醯胺織物層（a layer 〇f aramid fabric)、及 介於底部板片與核心部間之芳香族聚醯胺織物層。 部板片由一高分子材料形成。 在另-實施例中，提供-製造載具的方法。該方法包括形成 一複合框架，該框架具有一碳纖維核心部（(^此〇11 fiber c〇re)、 -頂部板片、-底部板片、-介於頂部板片與核心部間之芳香族 聚醯胺織物層、及另-介於底部板片與核心部間之芳香族聚酿胺 織物層。頂部板片與底部板片各由一高分子材料形成。該方法更 包括形成-標定大小的開口·以接受—基板，及設置數個延伸 至開口部的支撐細以支關口勒之基板。該形成之開口部比 基板稍大，以使基板與開口部間存在一間隙。 而又在另一實施例中，提供一用以製備基板之载具的製造方 7 200845271 法。該方法包括：形成一本體，該本體包含一具有第一面及第二 面之核心材料部；於該本體中形成一開口部；對該本體施加一熱 硬化循環（thermal curing cycle)，以使殘留應力最小化及減低 該本體之不平坦特徵；於熱塑性層之表面上方及邊緣施加一壓 力，以確保該本體之密閉；及切削該本體以界定成該載具。該核 心材料部有一熱塑性層，皆形成於該核心材料部之第一面及第二 面上。該開口部標定大小來接受基板。該切削製程設定為界定開 口部的尺寸及載具外部的尺寸參數。
經由该發明原理之舉例說明，本發明之優點將可透過以下詳 述及相配合之附圖而得知。 【實施方式】 於下述中 ^〜肘鬧明眾夕的特定細節以供徹底了解本發明。然 :二本二：者當可輕易得知本發明不需要下述中之某些細節 二在，、他狀況τ ’為避免不必要地赌本發明，已知之 用於此之「彎液面」(__) =3二ί液面的維持係藉由送達流體至-表面Γ， 面的形狀可猎精密流體輪送及 制丹有弓月 delivery and re_i _ 議 fluid 化之》系統控制器作為介面。帝J 3糸統邛分地以-可網路
，1A係一近接頭設備1〇〇之示範 將該示範性實施例表示於平 圖。圖1B 於一載具150之中，哼^ a s +在此乾例中，基板安置 之中心如部的框ζ === 射;標定大似接受基板⑽ 方向穿過上部近接頭1ϊ〇與下接頭H，順著箭頭166的 u 弓月面200因此在該近接頭 8 200845271 110的-表面、基板160的表面及載具150的部分表面之 舉例來說，彎月面200可界定為至少與基板⑽的直徑同寬 另一例中，彎月面200比基板16〇的直徑稍寬，以使載具丨 表面邊緣(例如，至少是圍繞在基板圓周的表面邊緣)與彎月面 相接觸。在前述說明的例子中，該彎月面於上部與下部 (田^，之間形成。「上部」（UPPer)與「下部」（lower)之詞係 ^來J義-例子，其中載具15〇實質上水平地固持及運送基板， ;」而其他除水平之外的方向亦有可能。 ΛΑ + ίΐ 150可藉由一設備來輪送，以導致載具150順著箭頭166 的方向穿過上部與下部近接頭⑴G、⑽之間。舉例來說，該 =備可包括圖職示之轨道lu。軌道nl可設 載= 150 ’且沿著轨道⑴輸送载具15〇。不受限地，該載具15〇 ^ 馬達、螺^傳動、皮帶傳動、磁控制料等所控制。 / ^一實施例中，基板160於近接頭⑴0、^)-侧的-第-2置放於載具⑽上’於近接頭⑴。、12〇) J的」:二:置 ΐί ‘後i，2f)i3可由近接頭U1G、12G)穿過回來，或由近 )的ΐ方、下方或周圍回到第—位置，以供置放下 此程序重複進行。載具⑽亦銶祕 有支4所示），每個支擇銷具 使ί液!载具編，隙158。間隙158可受操控，俾 吏二液斜祕錢具過渡到晶圓，且再_載具上 : 及後緣156具有傾率的邊緣^防 舉例來ί兒，載且150 ^出^液面時，彎液面液體之容綱然改變。 向成一角度θ，亦11开^置中點，而相對應之兩後緣分別與一橫 速位移之綠亦可使Τ ΐ：置巾點。其他不造麟液面形狀迅 丌使用，如梯形或平行四邊形，其中前後緣與載 9 200845271 的角度，或與彎液面之前後緣成 沾士，土應注意到，除了在圖1之舉例中，該基板順著箭頭166 =方向牙過近接頭⑴0、12〇)，亦可能使該基板保持靜止而使 5頭0=、12G)從基板的上下方穿過，使基板相對於近接頭二 二。再者’基紐近接賴穿過時的定蚁隨意 美 ^不―定要用水平的定位’而可用垂直或其他任意角^定$ ‘ f特定的實關中，-控制器控制載具150的移動及 、羅部近翻⑽、12Q)的流動，該㈣11可為功能取決於 途或特定用途的電腦系統。該流體可由益塵室 设備或容器中供應。 田…、麼至 圖2係表示上部近接頭11〇的示意圖， 120(圖1)的鏡像。各近接頭包括數個中心喷嘴η/，开^ 2 200的液體穿過該喷嘴來供應。該液體可以^ /生=液面
其他液體用以處理、清洗或洗滌基板16。 ：二、以J f 2°°的周邊施加真空。真空口 m從彎 ，吸液體，該流體如由喷嘴112供應之空氣或其^ 嘴3可提供來圍繞或部分地圍繞真空口 m t =、丙知纽祕、以上兩者的混合氣體、或i 了相二喷嘴112及由該處供應之流體幫^面^ = 上-連貫的氣液介面相。更多有關於近接表面 =第_峨作有二接 圖3A到3(:說明基板16〇穿過且 (110 ^ 200 〇 t ^ "I： 近接頭⑴〇、_，基板16_具⑽往左方移動。 10 200845271 P皆段時’基板160 -直延伸穿過腎液面2〇〇，以使基板⑽ =與後緣164位於彎液面200的兩側，且彎液面2 缘3
正接近基板160的後緣164。吾人應H J ? 150 ^ 2；〇 ^,1 ίί；®Ϊ 刀之載具150可與肯液面200相接觸。 在圖3Β中，彎液面200正從基^ ^ Ρ跡娜位於彎液面之 = ，斷面可稍微比基板160的厚。舉例來說，基板⑽可為^臟 f Η’士而載h 5咖厚。如此，當-液面2GG過渡^載且150 ί面液體將遭載具⑽位移。圖sd纖液 面已元全地從基板160過渡到載具15〇上。 中弓液 通常^平4^^7^性，載具15()的平面圖。晶圓載具卿 3 ί千，有扣部151標定大小以接受處理用之曰圓。 152支撐。在—實施例中，開口部&内 ΚίΞ 之支撐銷152。載具150亦可包括數個供一 =〇 =153。例如，一用來將晶圓置放於載具 或末端執行器（end effector)，= 至晶圓底下以使晶圓能被升起卩口 153後滑動 在凹口 153虚蔣曰域部（fingerS)，或處理設備可 將其升起，接著藉-機哭圖中）從载具150底下 載具=亦器或末端執行器移除。 ' 157) ? ---- 厚邊=?系㈣以 彎、夜面Γθ At支撐日日圓時穿過一可能只有約2至3厘平厚的 弓液面’载具能呈薄狀、平坦及剛硬是很重要的， 200845271 轉最小化，亦即垂直於載具15G表 ^ ^ ^ Μ. ^ ^ Κ 4 ^ (hydrofluoric acid)(顧务今 w w / 如虱鼠酸 so㈣⑽。在一實^ ί，^ jlu〇nde (155、157)之加厚部分外的厚度約為} 5】米;二^加厚邊緣 ί =他基板_^= 亦維二坦度，同時 圖6表示一載具18〇具有一具古取业々ΜΑ丄土 姐張力’即張力向左右兩邊緣相背離，同時s 載具==〇時使㈣面流體的迅速位移最:化门- 大縱向尺面圖，誇 ί
Pennsvl如f Γ 烯板片可從賓州費城（Philadelphia 能=具機械及化=或St =惡= f 成具有一期望之疏水性(hydrophobicity)，以 的完整_2至30。亦即，在某些製程中 材料具，而在其他製程中期望較具親水性之載具。 一ill日Π二鼠乙烯可藉由研磨或拋光來製備，將疏水性微調至 接枯糾t。頂部與底部板片⑽、2G4)可用已知之熱塑性溶 n或猎由黏合劑密封在一起。頂部與底部板片（202、204)的 12 200845271 厚度可織至絲平戦具15G的壽命 载具150亦包括圖δ所示之一成坦性需求。 一複合核心部222及預浸布層⑽、；jf G ° J成層結構由 填充材料228，該填充材料可由聚偏二氣乙)^於=卜盆可設置一 形成。在一實施例中，複合核心部222包括掇硬棒(r〇d) 合例如以環氧樹脂為基材。複合核吳 ‘—或更多層的單向碳纖維環氧樹脂複3 其之下有 維強化複合積板(sheeting)來代替。單向^人夕層的碳纖 ====¾材= 2=料二考/:娜 5*.. 2付。從芳香族聚醯胺纖維形成的織物 替f香族聚醯胺纖維。此般材料需要益夠同帐 二，，織物，則可預拉伸(pre_tensi〇ned)以使$至因 伸^鬆垂。舉例來說，此預拉伸可類似於將織物』 =過妓皮面。材料如Sic卻不適合用此方法預拉伸 二Ϊ強化織物層具有與氟化氫及其他腐細匕學物相容 充材ί 3 ί例Γ ^樓鎖152(圖7中只表示一個）被插入於埴 «^(PEEK, P〇lyetheretherket〇；?^ 雜之材t亦可考翻以形成支_152。 防腐 載具15G的生產可藉由以下堆疊而成： 層的來偏一鼠乙細積板、一層的芳香族聚醯胺織物、—複合核 13 200845271 ΐϊΐίίϊί纖^環氧樹脂、又一層的芳香族聚醯胺織物 ⑽:严?的，緣、轉角更精確地成形，聚偏二氟乙烯:以 佈於方香域_織物層核心、的厢。在—實施例中，磁鐵( :於加厚邊緣⑽、157)中，與—磁性輸送器使 :其他適合用以作成加厚邊緣(155、==== f力^⑯加於載具的上方及所有邊緣’以確盆 :。貫施例中’反(pressure pla 時含上: =，55、157)雜形。另外形 形成時可，其他Ϊ形特ί載/、在承载w坦化。同理，壓板 在一貫施例中，當該堆疊仍受壓力時，可接受—埶; 合Ϊ5Ϊ=，以使_力最 約為34〇ΐ(17ϊί)5 ΐ該結構加熱至聚偏二氟乙烯的炼點， 箱溫度與元件溫朗建立鮮轉，二了由烘 循環後，載具可切削至最欲尺+心確疋、、ή果的一致性。硬化 ，的粗糙度。在另一實施例;依：===: %以==:二開地加熱至聚偏二氟:烯:溶點、。4 %:先杈造好。製造出的載具提c巧 該載具亦對氫_及科物洗的棘巾是侧鍵的。 成分、副產物及其k μίί'、同抗性，該污染物包括從其他清洗 成刀田J產物及基板上移除之材料。用來包封核心複合結構之聚 14 200845271 芳香族聚醯胺織物的複合材能使表面修改成 ，，水性達到其乾燥性能。複合载具之混雜構造 :夺裁時的損壞容限(damage t〇lerance)及運送，ΐ、先曰3 守载具的振動阻尼（vibration damping)。 ，、月/先日日® 福人示—流程圖綱’說明製造載具⑽用之-示心 所；之二】f造程。吾人應注意到，這些程序性步驟並非需二 ，之轉來進行，有些程序性步驟可同步進行。 而，依 不之開始方塊3〇2，接著進行到操作步驟柳 ^ ^二於 ，環以將殘留應力與不平坦性最小化。「不平坦&二;Lif ，直偏離。該設計可包含—如前述之微拱形 又:十 或其他基板的重量下平坦化。 使载具在晶圓 mtTimZ ^0 开开。在一實施例中，外部板片由聚偏二敦 箱溫度λ編溶點。根據使用之烘箱，供 在操作步驟310中，載具切削至最終 =犯中’可依預期疏水性所需之粗糙狀， 該製程方法接著結束於所示之完成方塊314 表面狀況。 ，然上述發明為了清楚理解而詳細敘述 =之申請專利範圍之範圍内，可從事特定 貫施例應被認為是舉例性而非限制性的，gj，，亡 ::限制’但仍可於隨附之申請專利範圍的範圍與均 【圖式簡單說明】 中之=====容純理解本發明，且圖 15 200845271 圖1A係一近接頭言免備之示範性實施例的立體圖。 圖1Β/系圖^ΙΑ所示之示範性實施利的平面圖。 圖2係表不上部近接頭的示意圖。 圖3A、3B及 液面中退出。 3C說明基板從由上部與下部近接頭所產生之$
•圖4係表:一晶圓載具之範例的平面圖。 圖5係表4巾該晶圓载具的橫剖面立 圖6係表b載具呈長方形狀之範例的平二。 圖7係表示圖4中沿著W線段之簡且=° 誇大縱向尺度以示清楚。 、耗例的横 圖8詳細表示® 7中該载具橫之成 圖9係-流程圖，說明用以製造圖4 、：二 乾性之複合模造製程。 口 S中的 载具之， 示
【主要元件符號說明】 100設備 no上部近接頭 111執道 112嘴嘴 114真空口 116中心喷嘴 120下部近接頭15〇载具 151開口部152支撐銷 153 凹口 154前緣 155加厚邊緣 156前緣 16 200845271 157加厚邊緣 158間隙 160基板 162前緣 164後緣 166箭頭 180載具 200彎月面 202頂部板片 204底部板片 220成層結構 222複合核心部 =ϊΐ碳纖維_樹脂預浸布層 =C胺預浸布層 232前緣 300流程圖 302開始 化 306加熱至外部板片的· 卞-_ Z ^及其所有邊緣加壓以確佯爽閉 310切削至最終尺寸 力雏保么閉 =;Γ疏水性所需之粗糙度修改表面狀況 17

Claims (1)

  1. 200845271 十、申請專利範圍： 1· 7種支撐基板用之載具，用以在使載具穿過由至少一個近接頭 所形成之一。彎液面以進行基板處理時支撐基板，該載具包含·· 一框架，具有：大小設成可以接受一基板的一開口部、及數 部内支稽該基板用之支禮銷，該開口部比雜板稍大 以使該基板與該開口部間有—_，·該框架包含：—複合核心部、 2部部板片、及位於該頂部板片與該複合核心部之 族聚醯胺織物，其中該頂部板片與該底部板片包 C 2. jt〇申請翻麵f丨狀狀基板狀載具 之方香族聚醯胺織物，位賊底部板片錢複合核心部之 3·如申請專利範圍第丨項之支撐基板用之 爱 十坦化，使其從一平面之垂直位移最小化。 T木貝貝上 ^如申請專利範圍第丨項之支撐基板用之 邛包含具有一環氧樹脂基材之模造碳、纖維複合材料、。中心硬合核心 ^如申請專利範圍第丨項之支撐基板用之，、 邛包含至少一層之單向預浸石炭纖維材料。/、 /、中邊複合核心 6· 碳纖 直 如申請專利範圍第5項之支撐基板用之 备維材料係配置成使得該碳纖維定向為/、二/、中該單向預浸 、錢具之左右邊緣垂 I如申請專利範圍第i項之支撐基板用之 ，、底部板片係以聚偏二氟乙烯形成。 /、，其中該頂部板片 18 200845271 胺織物以項之支躲板狀載具，其巾料族聚醯 右邊緣 支推基板用之載具，其中該載具之左 1勺0人專利範圍第1項之支撐基板用之載且，1中判呈承 造n該_以在使載具穿 i;造方所形成之-彎液面以進行基板處理時支撐基板， 板片开，賴合框架具有—碳纖軸㈣、-頂部 ΐί物;?ΐi頂部板片與該碳纖維核心部之間的- 、及位於該底部板片與該碳纖維核心部之 ，子力聚酿胺織物，該卿板片與底部板片由- ^架並具有數個—基板之開口部， 開部以於該開口部内支撑該基板 在一 ‘隙^ ^ 5亥土板稍大以在該基板與該開口部之間存 i二is項之支撐基板用之載具的製造方法，其 Ht 形，俾使當該框祕承載—基板而受負載 叶，就_貞上平坦化，使其從—平面之垂直位移最小化。 19 200845271 燦嗽方法，其 浸礙纖維材料，而進-步形成該韻維。以—詹之早向預 16. 如申請專利範圍第15項之支撐基板用 =該單向預浸碳纖維材料之碳_定向 直’該左右邊緣朝該載具移行之方向延伸。I、之左“、、彖垂 17. 如申請專利範圍第12項之支撐基板 中該頂部板片與底部板片係由聚偏二I乙^成、。的一方法’其 18. 如申請專利範圍帛12項之支撐基板 中該芳香族聚醯胺織物以環氧樹脂預浸。戰”的衣仏方法，其 19. 如申請專利範圍第12項之支撐基板用 包含模造該複合框架使其具有加厚之左右邊'^以^舰 性，該左右邊緣朝該載具移行之方向延伸。 e 20.如申請專利範圍第12項之支撺基板用之裁 中該載具更包含以熱塑性粉末形成之埴充材钮/、衣&方/ : 於製造該載具時在-熱循環處理巾燒結麵二。’“熱塑性粉末係 21·如申請專利範圍第12項之支撐基板用之 牛，豆 中該支撐銷以聚偏二敦乙稀或聚__酮中之—者开° ’、 20 200845271 22m：s：製造方法，該方法包含： 第二面，該核心材料 &一核心材料，具有-第-面與- 面兩面上的-層熱射生塑膠成於該核心材料的該第-面及該第二 板 ;…體中域開口部，該開口部的大小設成可接受該基 :環，以使殘留應力最小化及減低該 對该本體施加一熱硬化循： 本體之不平坦特徵； C 體之密閉；f力於雜紐層之—上部表面及邊緣，以確保該本 口部辆執，肋削肋界定減具之該開 2中3該範圍第22項之製備基板用之載具的製造方法，其 整形該熱塑性層之特定部位。 t含如^專利補第22項之製備基板用之載具的製造方法，更 整形該本體之部分以界定成該本體之該邊緣。 圍第22項之製備基板用之載具的製造方法，盆 :的ΐ點使用—溫度高達於該第—面與該第二面之該熱塑 2包6含如申請專利範圍第22項之製備基板用之载具的製造方法，更 修改該熱塑性層的表面粗糙度以得到期望之疏水性。 21
TW96149331A 2006-12-21 2007-12-21 濕式清洗設備用之混雜複合晶圓載具 TWI423369B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87663106P 2006-12-21 2006-12-21
US11/743,516 US8146902B2 (en) 2006-12-21 2007-05-02 Hybrid composite wafer carrier for wet clean equipment

Publications (2)

Publication Number Publication Date
TW200845271A true TW200845271A (en) 2008-11-16
TWI423369B TWI423369B (zh) 2014-01-11

Family

ID=39543283

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96149331A TWI423369B (zh) 2006-12-21 2007-12-21 濕式清洗設備用之混雜複合晶圓載具

Country Status (5)

Country Link
US (2) US8146902B2 (zh)
KR (1) KR20090106536A (zh)
CN (1) CN101632163B (zh)
TW (1) TWI423369B (zh)
WO (1) WO2008085259A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011103214A1 (en) * 2010-02-16 2011-08-25 Cypress Semiconductor Corporation Integrated shielding for wafer plating
CN103579057A (zh) * 2012-08-07 2014-02-12 浙江鸿禧光伏科技股份有限公司 一种提高石墨舟处理效果的方法
JP6612206B2 (ja) * 2016-12-19 2019-11-27 Ｔｏｗａ株式会社 切断装置
US11658059B2 (en) 2018-02-28 2023-05-23 Ii-Vi Delaware, Inc. Thin material handling carrier
US20190283164A1 (en) * 2018-03-19 2019-09-19 Asia Vital Components Co., Ltd. Soldering jig
CN110176421B (zh) * 2018-11-07 2021-07-02 北京市塑料研究所 一种疏水快干型硅片承载器及其制备方法
CN115551336A (zh) * 2019-01-04 2022-12-30 捷普有限公司 能够在至少底部填充物工艺期间支撑印刷电路板的载体
CN110600411A (zh) * 2019-09-18 2019-12-20 江西展宇新能源股份有限公司 一种用于快速制绒的单晶花篮及其插片杆
US20210300635A1 (en) * 2020-03-24 2021-09-30 Gudeng Precision Industrial Co., Ltd Container system
CN113819751B (zh) * 2021-08-27 2023-08-18 连城凯克斯科技有限公司 光伏电池片湿法用烘干装置

Family Cites Families (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953265A (en) 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
US4086870A (en) 1977-06-30 1978-05-02 International Business Machines Corporation Novel resist spinning head
US4367123A (en) 1980-07-09 1983-01-04 Olin Corporation Precision spot plating process and apparatus
JPS5852034B2 (ja) 1981-08-26 1983-11-19 株式会社ソニツクス 部分メツキ方法及びその装置
US4444492A (en) 1982-05-15 1984-04-24 General Signal Corporation Apparatus for projecting a series of images onto dies of a semiconductor wafer
US4838289A (en) 1982-08-03 1989-06-13 Texas Instruments Incorporated Apparatus and method for edge cleaning
US4609285A (en) * 1985-08-30 1986-09-02 Rca Corporation Wafer support plate for photolithographic apparatus
DE3574884D1 (de) * 1985-09-02 1990-01-25 Sulzer Ag Drehervorrichtung fuer webmaschinen.
JPS62150828A (ja) 1985-12-25 1987-07-04 Mitsubishi Electric Corp ウエハ乾燥装置
US4901011A (en) * 1988-11-04 1990-02-13 Tokyo Electron Limited Carrier for transferring plate-like objects one by one, a handling apparatus for loading or unloading the carrier, and a wafer probing machine fitted with the handling apparatus for the wafer carrier
JPH0712035B2 (ja) 1989-04-20 1995-02-08 三菱電機株式会社 噴流式液処理装置
US5750244A (en) * 1989-05-01 1998-05-12 Christensen; Richard M. High strength polymeric-fiber composites
JPH02309638A (ja) 1989-05-24 1990-12-25 Fujitsu Ltd ウエハーエッチング装置
JPH0628223Y2 (ja) 1989-06-14 1994-08-03 大日本スクリーン製造株式会社 回転塗布装置
US5271774A (en) 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5102494A (en) 1990-07-13 1992-04-07 Mobil Solar Energy Corporation Wet-tip die for EFG cyrstal growth apparatus
US5198280A (en) * 1990-10-25 1993-03-30 Allied-Signal Inc. Three dimensional fiber structures having improved penetration resistance
US5185195A (en) * 1990-11-19 1993-02-09 Allied-Signal Inc. Constructions having improved penetration resistance
US5294257A (en) 1991-10-28 1994-03-15 International Business Machines Corporation Edge masking spin tool
US5343234A (en) 1991-11-15 1994-08-30 Kuehnle Manfred R Digital color proofing system and method for offset and gravure printing
EP0625962B1 (de) * 1992-02-11 1996-03-13 Environmental Technologies (Europa) Ltd. Verfahren und anlage zur herstellung eigenschaftsmodifizierter werkstoffe
US5304413A (en) * 1992-04-29 1994-04-19 E. I. Du Pont De Nemours And Company Molded PVF laminar structures
JP2877216B2 (ja) 1992-10-02 1999-03-31 東京エレクトロン株式会社 洗浄装置
ATE135968T1 (de) * 1992-11-16 1996-04-15 Volker Haager Mehrschichtige stoffbahn zur bildung von flexiblen behältern, zelten, planen, schutzanzügen u.dgl.
GB9300545D0 (en) * 1993-01-13 1993-03-10 Hurel Dubois Uk Ltd Carbon fibre panels
US5820686A (en) 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5472502A (en) 1993-08-30 1995-12-05 Semiconductor Systems, Inc. Apparatus and method for spin coating wafers and the like
US5677045A (en) * 1993-09-14 1997-10-14 Hitachi, Ltd. Laminate and multilayer printed circuit board
US5807522A (en) 1994-06-17 1998-09-15 The Board Of Trustees Of The Leland Stanford Junior University Methods for fabricating microarrays of biological samples
CZ288371B6 (en) 1994-06-30 2001-06-13 Procter & Gamble Structure for transport of liquids and process for producing thereof
US5705223A (en) 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
JP3247270B2 (ja) 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
US5558111A (en) 1995-02-02 1996-09-24 International Business Machines Corporation Apparatus and method for carrier backing film reconditioning
US5601655A (en) 1995-02-14 1997-02-11 Bok; Hendrik F. Method of cleaning substrates
DE29505497U1 (de) * 1995-03-31 1995-06-08 Balzers Hochvakuum Beschichtungsstation
JPH08277486A (ja) 1995-04-04 1996-10-22 Dainippon Printing Co Ltd リードフレームのめっき装置
US5618594A (en) 1995-04-13 1997-04-08 Cvd, Incorporated Composite thermocouple protection tubes
TW386235B (en) 1995-05-23 2000-04-01 Tokyo Electron Ltd Method for spin rinsing
US5660642A (en) 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
EP0764837A1 (en) 1995-09-25 1997-03-26 Isuzu Ceramics Research Institute Co., Ltd. Thermocouple structure
US5975098A (en) 1995-12-21 1999-11-02 Dainippon Screen Mfg. Co., Ltd. Apparatus for and method of cleaning substrate
DE19622015A1 (de) 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
US5985031A (en) 1996-06-21 1999-11-16 Micron Technology, Inc. Spin coating spindle and chuck assembly
US5997653A (en) 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US5827608A (en) * 1996-10-28 1998-10-27 Minnesota Mining And Manufacturing Company Method of forming a thermoplastic layer on a flexible two-dimensional substrate and powder for preparing same
US5830334A (en) 1996-11-07 1998-11-03 Kobayashi; Hideyuki Nozzle for fast plating with plating solution jetting and suctioning functions
JPH1133506A (ja) 1997-07-24 1999-02-09 Tadahiro Omi 流体処理装置及び洗浄処理システム
JPH10163138A (ja) 1996-11-29 1998-06-19 Fujitsu Ltd 半導体装置の製造方法および研磨装置
JP2951903B2 (ja) 1997-01-09 1999-09-20 株式会社日立製作所 処理装置
JPH10232498A (ja) 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JPH1131672A (ja) 1997-07-10 1999-02-02 Hitachi Ltd 基板処理方法および基板処理装置
US6103636A (en) 1997-08-20 2000-08-15 Micron Technology, Inc. Method and apparatus for selective removal of material from wafer alignment marks
EP0905746A1 (en) 1997-09-24 1999-03-31 Interuniversitair Micro-Elektronica Centrum Vzw Method of removing a liquid from a surface of a rotating substrate
US6398975B1 (en) 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
JP4616948B2 (ja) 1997-09-24 2011-01-19 アイメック 回転基材の表面から液体を除去する方法および装置
WO1999016109A1 (en) 1997-09-24 1999-04-01 Interuniversitair Micro-Elektronica Centrum Vereniging Zonder Winstbejag Method and apparatus for removing a liquid from a surface
US6491764B2 (en) 1997-09-24 2002-12-10 Interuniversitair Microelektronics Centrum (Imec) Method and apparatus for removing a liquid from a surface of a rotating substrate
JP2974007B1 (ja) * 1997-10-20 1999-11-08 新神戸電機株式会社 被研磨物保持材及び被研磨物の製造法
JP3523197B2 (ja) 1998-02-12 2004-04-26 エーシーエム リサーチ，インコーポレイティド メッキ設備及び方法
US6108932A (en) 1998-05-05 2000-08-29 Steag Microtech Gmbh Method and apparatus for thermocapillary drying
JPH11350169A (ja) 1998-06-10 1999-12-21 Chemitoronics Co ウエットエッチング装置およびウエットエッチングの方法
US6132586A (en) 1998-06-11 2000-10-17 Integrated Process Equipment Corporation Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly
EP0967453A1 (en) * 1998-06-25 1999-12-29 Armortec Incorporated Flexible, impact-resistant materials
CA2346952C (en) * 1998-10-23 2008-03-18 Vantico Ag Method for filling and reinforcing honeycomb sandwich panels
US6689323B2 (en) 1998-10-30 2004-02-10 Agilent Technologies Method and apparatus for liquid transfer
US6652938B1 (en) * 1998-11-09 2003-11-25 Kaneka Corporation Media transport belt
US6092937A (en) 1999-01-08 2000-07-25 Fastar, Ltd. Linear developer
GB9900577D0 (en) * 1999-01-13 1999-03-03 Altro Ltd Non stain flooring
US6169244B1 (en) 1999-05-21 2001-01-02 Moore Epitaxial, Inc. Thermocouple sheath cover
DE19931113A1 (de) 1999-07-06 2001-01-25 Ekra Eduard Kraft Gmbh Verfahren zum Aufbringen von Verbindungsmaterialien für eine Verbindung zwischen einem Mikrochip und einem Substrat, Verfahren zum Herstellen einer elektrischen und mechanischen Verbindung zwischen einem Mikrochip und einem Substrat sowie Verwendung eines nach dem Tintendruckprinzip arbeitenden Druckkopfes
JP3653198B2 (ja) 1999-07-16 2005-05-25 アルプス電気株式会社 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置
US20020121290A1 (en) 1999-08-25 2002-09-05 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
JP3635217B2 (ja) 1999-10-05 2005-04-06 東京エレクトロン株式会社 液処理装置及びその方法
WO2001027357A1 (en) 1999-10-12 2001-04-19 Semitool, Inc. Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station
US6662950B1 (en) * 1999-10-25 2003-12-16 Brian R. Cleaver Wafer shipping and storage container
US6341998B1 (en) 1999-11-04 2002-01-29 Vlsi Technology, Inc. Integrated circuit (IC) plating deposition system and method
US6214513B1 (en) 1999-11-24 2001-04-10 Xerox Corporation Slot coating under an electric field
US6433541B1 (en) 1999-12-23 2002-08-13 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements during the process for removing the film
US6458526B1 (en) * 2000-01-28 2002-10-01 Agilent Technologies, Inc. Method and apparatus to inhibit bubble formation in a fluid
JP2001220688A (ja) 2000-02-09 2001-08-14 Matsushita Electric Ind Co Ltd 薄膜形成装置及び薄膜形成方法
US20030091754A1 (en) 2000-02-11 2003-05-15 Thami Chihani Method for treating cellulosic fibres
US6474786B2 (en) 2000-02-24 2002-11-05 The Board Of Trustees Of The Leland Stanford Junior University Micromachined two-dimensional array droplet ejectors
JP2001244279A (ja) * 2000-02-25 2001-09-07 Nec Niigata Ltd 基板の供給方法、基板供給装置、チップ供給装置およびチップ実装装置
US6495005B1 (en) 2000-05-01 2002-12-17 International Business Machines Corporation Electroplating apparatus
CA2409093C (en) 2000-05-16 2009-07-21 Regents Of The University Of Minnesota High mass throughput particle generation using multiple nozzle spraying
JP2004515053A (ja) 2000-06-26 2004-05-20 アプライド　マテリアルズ　インコーポレイテッド ウェーハ洗浄方法及び装置
US6290491B1 (en) 2000-06-29 2001-09-18 Motorola, Inc. Method for heating a semiconductor wafer in a process chamber by a shower head, and process chamber
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US6488040B1 (en) 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
US7000622B2 (en) 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
US6530823B1 (en) 2000-08-10 2003-03-11 Nanoclean Technologies Inc Methods for cleaning surfaces substantially free of contaminants
JP2002075947A (ja) 2000-08-30 2002-03-15 Alps Electric Co Ltd ウェット処理装置
US6555017B1 (en) 2000-10-13 2003-04-29 The Regents Of The University Of Caliofornia Surface contouring by controlled application of processing fluid using Marangoni effect
US6550988B2 (en) 2000-10-30 2003-04-22 Dainippon Screen Mfg., Co., Ltd. Substrate processing apparatus
US6375313B1 (en) 2001-01-08 2002-04-23 Hewlett-Packard Company Orifice plate for inkjet printhead
US6531206B2 (en) 2001-02-07 2003-03-11 3M Innovative Properties Company Microstructured surface film assembly for liquid acquisition and transport
TW480221B (en) 2001-02-27 2002-03-21 Microjet Technology Co Ltd Method to precisely align and adhere ink jet head chip and nozzle plate
KR20040028782A (ko) 2001-06-12 2004-04-03 베르테크, 인코포레이티드 메가소닉 세정기 및 건조기 시스템
TW554069B (en) 2001-08-10 2003-09-21 Ebara Corp Plating device and method
JP2003115474A (ja) 2001-10-03 2003-04-18 Ebara Corp 基板処理装置及び方法
TW561541B (en) * 2001-10-09 2003-11-11 Hitachi Chemical Co Ltd Polishing pad for CMP, method for polishing substrate using it and method for producing polishing pad for CMP
JP4003441B2 (ja) 2001-11-08 2007-11-07 セイコーエプソン株式会社 表面処理装置および表面処理方法
US6799584B2 (en) 2001-11-09 2004-10-05 Applied Materials, Inc. Condensation-based enhancement of particle removal by suction
US6849339B2 (en) * 2001-11-27 2005-02-01 Guardian Industries Corporation Composite laminate structures especially useful for automotive trim components, and methods and tie layers employed to make the same
DE10200525A1 (de) * 2002-01-09 2003-10-23 Mattson Wet Products Gmbh Vorrichtung und Verfahren zum Behandeln von scheibenförmigen Substraten
JP3888620B2 (ja) * 2002-01-22 2007-03-07 東京エレクトロン株式会社 基板搬送装置における基板の受け渡し位置検知方法及びその教示装置
TWI274393B (en) 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
FR2839788B1 (fr) * 2002-05-14 2004-11-05 Essilor Int Support individuel de lentille optique
US6864195B2 (en) 2002-08-15 2005-03-08 Bfs Diversified Products, Llc Heat weldable roofing membrane
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7252097B2 (en) 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7069937B2 (en) 2002-09-30 2006-07-04 Lam Research Corporation Vertical proximity processor
US7329321B2 (en) 2002-09-30 2008-02-12 Lam Research Corporation Enhanced wafer cleaning method
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
TWI230396B (en) 2002-09-30 2005-04-01 Lam Res Corp System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100446179C (zh) 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
US7320825B2 (en) * 2003-05-27 2008-01-22 International Paper Company Barrier coatings for oil and grease resistance
EP1489461A1 (en) 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US7230047B2 (en) * 2003-06-25 2007-06-12 Henkel Corporation Reformable compositions
US7427444B2 (en) * 2003-07-16 2008-09-23 Air Products Polymers, L.P. Polymer emulsion coatings for cellulosic substrates with improved barrier properties
US7353560B2 (en) 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
US20050176530A1 (en) * 2004-02-06 2005-08-11 Leo Sartor Hockey stick blade
US7003899B1 (en) 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
US7713890B2 (en) * 2005-08-23 2010-05-11 Milliken & Company Flexible sheet-like composites
US7378359B2 (en) * 2005-09-27 2008-05-27 Eleazer Howell B Moldable fibrous construction incorporating non-woven layers
US7946303B2 (en) * 2006-09-29 2011-05-24 Lam Research Corporation Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus

Also Published As

Publication number Publication date
KR20090106536A (ko) 2009-10-09
CN101632163A (zh) 2010-01-20
US20120168079A1 (en) 2012-07-05
CN101632163B (zh) 2011-08-31
TWI423369B (zh) 2014-01-11
US8146902B2 (en) 2012-04-03
WO2008085259A1 (en) 2008-07-17
US8292697B2 (en) 2012-10-23
US20080152922A1 (en) 2008-06-26

Similar Documents

Publication Publication Date Title
TW200845271A (en) Hybrid composite wafer carrier for wet clean equipment
JP5547932B2 (ja) 成膜装置
JP5122546B2 (ja) 基板処理装置
US20160280536A1 (en) Method for Manufacturing Hollow Structure
JP2018065242A (ja) ナノ構造強化された複合体およびナノ構造強化方法
TW201140737A (en) Apparatus for processing a substrate
JP2010536706A (ja) ナノ構造補強の複合品および方法
JP2015091619A5 (zh)
KR20100102228A (ko) 성막 장치 및, 성막 방법
JP5292032B2 (ja) 重合膜の成膜方法および成膜装置
CN110172736A (zh) 一种大尺寸三层硫化钼单晶的化学气相沉积制备方法
TW201132418A (en) Pre-drying device and pre-drying method
US20050236268A1 (en) Substrate processing apparatus
CN107799437A (zh) 用于处理基板的装置和方法
JP4738085B2 (ja) 塗布膜形成装置、及び塗布膜形成方法
TW201014658A (en) Treating liquid supplying unit and substrate treating apparatus and method using the same
Dong et al. Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods
JP4841411B2 (ja) パウダースラッシュ成形機
TW201820513A (zh) 基板裝載系統
WO2007094229A1 (ja) 基板の処理方法及びコンピュータ読み取り可能な記憶媒体
KR20150114697A (ko) 원자층 증착 시스템
JP6255222B2 (ja) 金属酸化物−ポリマー積層体およびその製造方法
JP2004286975A (ja) 液晶表示装置
KR101621817B1 (ko) Ｖａｒｔｍ 공정을 이용한 복합재료의 성형방법
US20140227377A1 (en) Device for hot embossing of a polymer layer

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees