TW200836025A - Treatment liquid for developed resist substrate and treating method for resist substrate using therewith - Google Patents
Treatment liquid for developed resist substrate and treating method for resist substrate using therewith Download PDFInfo
- Publication number
- TW200836025A TW200836025A TW096138774A TW96138774A TW200836025A TW 200836025 A TW200836025 A TW 200836025A TW 096138774 A TW096138774 A TW 096138774A TW 96138774 A TW96138774 A TW 96138774A TW 200836025 A TW200836025 A TW 200836025A
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- soluble polymer
- containing water
- substrate
- photoresist substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 239000007788 liquid Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000011282 treatment Methods 0.000 title claims description 69
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 120
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 34
- 238000012545 processing Methods 0.000 claims abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 4
- 229920000570 polyether Polymers 0.000 claims abstract description 4
- 238000011161 development Methods 0.000 claims description 20
- 125000003277 amino group Chemical group 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 229920005862 polyol Polymers 0.000 claims 1
- 150000003077 polyols Chemical group 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- 229920000768 polyamine Polymers 0.000 abstract description 4
- 238000003672 processing method Methods 0.000 abstract description 3
- 150000005846 sugar alcohols Polymers 0.000 abstract description 2
- 239000011342 resin composition Substances 0.000 description 24
- 229920000642 polymer Polymers 0.000 description 16
- 239000002253 acid Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- -1 benzoquinonediazide compound Chemical class 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 125000005647 linker group Chemical group 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 125000001033 ether group Chemical group 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- LEEBETSNAGEFCY-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 LEEBETSNAGEFCY-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 1
- QVTSRQSNAIKWMW-UHFFFAOYSA-N 1,5,6-trimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1C(C)=CC=CC1(C)O QVTSRQSNAIKWMW-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- GXGJIOMUZAGVEH-UHFFFAOYSA-N Chamazulene Chemical group CCC1=CC=C(C)C2=CC=C(C)C2=C1 GXGJIOMUZAGVEH-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 235000013844 butane Nutrition 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- NQRYJNQNLNOLGT-UHFFFAOYSA-N tetrahydropyridine hydrochloride Natural products C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006285262A JP2008102343A (ja) | 2006-10-19 | 2006-10-19 | 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200836025A true TW200836025A (en) | 2008-09-01 |
Family
ID=39313951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096138774A TW200836025A (en) | 2006-10-19 | 2007-10-17 | Treatment liquid for developed resist substrate and treating method for resist substrate using therewith |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20100028817A1 (enExample) |
| EP (1) | EP2088469A4 (enExample) |
| JP (1) | JP2008102343A (enExample) |
| KR (1) | KR20090079242A (enExample) |
| CN (1) | CN101523295A (enExample) |
| TW (1) | TW200836025A (enExample) |
| WO (1) | WO2008047720A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5000260B2 (ja) * | 2006-10-19 | 2012-08-15 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液 |
| JP5306755B2 (ja) * | 2008-09-16 | 2013-10-02 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 基板処理液およびそれを用いたレジスト基板処理方法 |
| JP5591623B2 (ja) * | 2010-08-13 | 2014-09-17 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | リソグラフィー用リンス液およびそれを用いたパターン形成方法 |
| JP5705669B2 (ja) * | 2011-07-14 | 2015-04-22 | メルクパフォーマンスマテリアルズＩｐ合同会社 | 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法 |
| US9097977B2 (en) | 2012-05-15 | 2015-08-04 | Tokyo Electron Limited | Process sequence for reducing pattern roughness and deformity |
| EP2935994A4 (en) | 2012-12-21 | 2016-09-28 | Covanta Energy Llc | GASIFICATION AND COMBUSTION SYSTEM |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3700623A (en) * | 1970-04-22 | 1972-10-24 | Hercules Inc | Reaction products of epihalohydrin and polymers of diallylamine and their use in paper |
| US3833531A (en) * | 1970-04-22 | 1974-09-03 | Hercules Inc | Reaction products of epihalohydrin and polymers of diallylamine and salts thereof and their use in paper |
| US4053512A (en) * | 1976-08-02 | 1977-10-11 | American Cyanamid Company | Process for preparing poly(allyltrialkylammonium) salt flocculants |
| US4350759A (en) * | 1981-03-30 | 1982-09-21 | Polaroid Corporation | Allyl amine polymeric binders for photographic emulsions |
| JPS60110987A (ja) * | 1983-11-15 | 1985-06-17 | 日東紡績株式会社 | 染色堅牢度向上法 |
| US4537831A (en) * | 1984-02-22 | 1985-08-27 | Air Products And Chemicals, Inc. | Crosslinking of chlorine-containing polymers |
| US6203785B1 (en) * | 1996-12-30 | 2001-03-20 | Geltex Pharmaceuticals, Inc. | Poly(diallylamine)-based bile acid sequestrants |
| TW372337B (en) * | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
| JP3659404B2 (ja) * | 1997-10-29 | 2005-06-15 | 日東紡績株式会社 | Ｎ，ｎ−ジアルキルアリルアミン系重合体の製造方法およびｎ，ｎ−ジアルキルアリルアミン系重合体 |
| US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| JP2001066782A (ja) * | 1999-08-26 | 2001-03-16 | Mitsubishi Electric Corp | 半導体装置の製造方法並びに半導体装置 |
| US7189783B2 (en) * | 2001-11-27 | 2007-03-13 | Fujitsu Limited | Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof |
| JP4045180B2 (ja) | 2002-12-03 | 2008-02-13 | Ａｚエレクトロニックマテリアルズ株式会社 | リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法 |
| EP1584633B1 (en) * | 2003-04-01 | 2010-10-20 | Nitto Boseki Co., Ltd. | Modified polyallylamine and process for producing the same |
| US20070218412A1 (en) * | 2004-04-23 | 2007-09-20 | Tokyo Ohka Kogyo Co., Ltd. | Rinse Solution For Lithography |
| JP2006011054A (ja) * | 2004-06-25 | 2006-01-12 | Shin Etsu Chem Co Ltd | リンス液及びこれを用いたレジストパターン形成方法 |
| JP2006030483A (ja) * | 2004-07-14 | 2006-02-02 | Tokyo Electron Ltd | リンス処理方法および現像処理方法 |
| CN101010639A (zh) * | 2004-09-01 | 2007-08-01 | 东京应化工业株式会社 | 光蚀刻用冲洗液和抗蚀图案形成方法 |
| JP4676325B2 (ja) * | 2005-02-18 | 2011-04-27 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
| US7528200B2 (en) * | 2006-02-01 | 2009-05-05 | Ardes Enterprises, Inc. | Epoxy hardener systems based on aminobis(methylene-ethyleneurea) |
| US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| US20100028803A1 (en) * | 2008-08-01 | 2010-02-04 | Fujifilm Corporation | Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern |
-
2006
- 2006-10-19 JP JP2006285262A patent/JP2008102343A/ja active Pending
-
2007
- 2007-10-12 US US12/311,724 patent/US20100028817A1/en not_active Abandoned
- 2007-10-12 WO PCT/JP2007/069978 patent/WO2008047720A1/ja not_active Ceased
- 2007-10-12 KR KR1020097010135A patent/KR20090079242A/ko not_active Ceased
- 2007-10-12 CN CNA2007800377970A patent/CN101523295A/zh active Pending
- 2007-10-12 EP EP07829714A patent/EP2088469A4/en not_active Withdrawn
- 2007-10-17 TW TW096138774A patent/TW200836025A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090079242A (ko) | 2009-07-21 |
| JP2008102343A (ja) | 2008-05-01 |
| US20100028817A1 (en) | 2010-02-04 |
| EP2088469A1 (en) | 2009-08-12 |
| EP2088469A4 (en) | 2010-10-20 |
| CN101523295A (zh) | 2009-09-02 |
| WO2008047720A1 (en) | 2008-04-24 |
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