JP2008102343A - 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法 - Google Patents

現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法 Download PDF

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Publication number
JP2008102343A
JP2008102343A JP2006285262A JP2006285262A JP2008102343A JP 2008102343 A JP2008102343 A JP 2008102343A JP 2006285262 A JP2006285262 A JP 2006285262A JP 2006285262 A JP2006285262 A JP 2006285262A JP 2008102343 A JP2008102343 A JP 2008102343A
Authority
JP
Japan
Prior art keywords
resist substrate
substrate processing
resist
soluble polymer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006285262A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008102343A5 (enExample
Inventor
Takeshi Noya
谷 剛 能
Ryuta Shimazaki
崎 竜 太 嶋
Masaichi Kobayashi
林 政 一 小
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Priority to JP2006285262A priority Critical patent/JP2008102343A/ja
Priority to CNA2007800377970A priority patent/CN101523295A/zh
Priority to KR1020097010135A priority patent/KR20090079242A/ko
Priority to US12/311,724 priority patent/US20100028817A1/en
Priority to EP07829714A priority patent/EP2088469A4/en
Priority to PCT/JP2007/069978 priority patent/WO2008047720A1/ja
Priority to TW096138774A priority patent/TW200836025A/zh
Publication of JP2008102343A publication Critical patent/JP2008102343A/ja
Publication of JP2008102343A5 publication Critical patent/JP2008102343A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2006285262A 2006-10-19 2006-10-19 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法 Pending JP2008102343A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006285262A JP2008102343A (ja) 2006-10-19 2006-10-19 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法
CNA2007800377970A CN101523295A (zh) 2006-10-19 2007-10-12 显影后抗蚀基板处理溶液及使用它的抗蚀基板处理方法
KR1020097010135A KR20090079242A (ko) 2006-10-19 2007-10-12 현상 완료 레지스트 기판 처리액과 이를 사용한 레지스트 기판의 처리 방법
US12/311,724 US20100028817A1 (en) 2006-10-19 2007-10-12 Solution for treatment of resist substrate after development processing and method for treatment of resist substrate using the same
EP07829714A EP2088469A4 (en) 2006-10-19 2007-10-12 RESISTANT SUBSTRATE TREATMENT SOLUTION AFTER DEVELOPMENT PROCESSING AND PROCESS FOR TREATING RESERVE SUBSTRATE USING THE SAME
PCT/JP2007/069978 WO2008047720A1 (en) 2006-10-19 2007-10-12 Solution for treatment of resist substrate after development processing, and method for treatment of resist substrate using the same
TW096138774A TW200836025A (en) 2006-10-19 2007-10-17 Treatment liquid for developed resist substrate and treating method for resist substrate using therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006285262A JP2008102343A (ja) 2006-10-19 2006-10-19 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法

Publications (2)

Publication Number Publication Date
JP2008102343A true JP2008102343A (ja) 2008-05-01
JP2008102343A5 JP2008102343A5 (enExample) 2009-04-23

Family

ID=39313951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006285262A Pending JP2008102343A (ja) 2006-10-19 2006-10-19 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法

Country Status (7)

Country Link
US (1) US20100028817A1 (enExample)
EP (1) EP2088469A4 (enExample)
JP (1) JP2008102343A (enExample)
KR (1) KR20090079242A (enExample)
CN (1) CN101523295A (enExample)
TW (1) TW200836025A (enExample)
WO (1) WO2008047720A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012020747A1 (ja) * 2010-08-13 2012-02-16 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP5306755B2 (ja) * 2008-09-16 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 基板処理液およびそれを用いたレジスト基板処理方法
JP5705669B2 (ja) * 2011-07-14 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法
US9097977B2 (en) 2012-05-15 2015-08-04 Tokyo Electron Limited Process sequence for reducing pattern roughness and deformity
EP2935994A4 (en) 2012-12-21 2016-09-28 Covanta Energy Llc GASIFICATION AND COMBUSTION SYSTEM

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JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
JP2006030483A (ja) * 2004-07-14 2006-02-02 Tokyo Electron Ltd リンス処理方法および現像処理方法
WO2006025303A1 (ja) * 2004-09-01 2006-03-09 Tokyo Ohka Kogyo Co., Ltd. リソグラフィー用リンス液とレジストパターン形成方法

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US3700623A (en) * 1970-04-22 1972-10-24 Hercules Inc Reaction products of epihalohydrin and polymers of diallylamine and their use in paper
US3833531A (en) * 1970-04-22 1974-09-03 Hercules Inc Reaction products of epihalohydrin and polymers of diallylamine and salts thereof and their use in paper
US4053512A (en) * 1976-08-02 1977-10-11 American Cyanamid Company Process for preparing poly(allyltrialkylammonium) salt flocculants
US4350759A (en) * 1981-03-30 1982-09-21 Polaroid Corporation Allyl amine polymeric binders for photographic emulsions
JPS60110987A (ja) * 1983-11-15 1985-06-17 日東紡績株式会社 染色堅牢度向上法
US4537831A (en) * 1984-02-22 1985-08-27 Air Products And Chemicals, Inc. Crosslinking of chlorine-containing polymers
US6203785B1 (en) * 1996-12-30 2001-03-20 Geltex Pharmaceuticals, Inc. Poly(diallylamine)-based bile acid sequestrants
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
JP3659404B2 (ja) * 1997-10-29 2005-06-15 日東紡績株式会社 Ｎ，ｎ−ジアルキルアリルアミン系重合体の製造方法およびｎ，ｎ−ジアルキルアリルアミン系重合体
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP2001066782A (ja) * 1999-08-26 2001-03-16 Mitsubishi Electric Corp 半導体装置の製造方法並びに半導体装置
US7189783B2 (en) * 2001-11-27 2007-03-13 Fujitsu Limited Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
JP4045180B2 (ja) 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
EP1584633B1 (en) * 2003-04-01 2010-10-20 Nitto Boseki Co., Ltd. Modified polyallylamine and process for producing the same
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
JP2006030483A (ja) * 2004-07-14 2006-02-02 Tokyo Electron Ltd リンス処理方法および現像処理方法
WO2006025303A1 (ja) * 2004-09-01 2006-03-09 Tokyo Ohka Kogyo Co., Ltd. リソグラフィー用リンス液とレジストパターン形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012020747A1 (ja) * 2010-08-13 2012-02-16 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
JP2012042531A (ja) * 2010-08-13 2012-03-01 Az Electronic Materials Kk リソグラフィー用リンス液およびそれを用いたパターン形成方法

Also Published As

Publication number Publication date
KR20090079242A (ko) 2009-07-21
TW200836025A (en) 2008-09-01
US20100028817A1 (en) 2010-02-04
EP2088469A1 (en) 2009-08-12
EP2088469A4 (en) 2010-10-20
CN101523295A (zh) 2009-09-02
WO2008047720A1 (en) 2008-04-24

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