TW200821402A - System and method including a particle trap/filter for recirculating a dilution gas - Google Patents
System and method including a particle trap/filter for recirculating a dilution gas Download PDFInfo
- Publication number
- TW200821402A TW200821402A TW096135769A TW96135769A TW200821402A TW 200821402 A TW200821402 A TW 200821402A TW 096135769 A TW096135769 A TW 096135769A TW 96135769 A TW96135769 A TW 96135769A TW 200821402 A TW200821402 A TW 200821402A
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- gas
- coupled
- process gas
- filter
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 271
- 239000002245 particle Substances 0.000 title abstract description 22
- 230000003134 recirculating effect Effects 0.000 title abstract description 8
- 238000010790 dilution Methods 0.000 title description 2
- 239000012895 dilution Substances 0.000 title description 2
- 230000008569 process Effects 0.000 claims abstract description 248
- 239000007789 gas Substances 0.000 claims description 261
- 239000011159 matrix material Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 34
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 32
- 239000013589 supplement Substances 0.000 claims description 21
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000004064 recycling Methods 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 8
- 239000003085 diluting agent Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims 1
- 230000000712 assembly Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000000356 contaminant Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011859 microparticle Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000013618 particulate matter Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 241000287107 Passer Species 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Filtering Of Dispersed Particles In Gases (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82671806P | 2006-09-22 | 2006-09-22 | |
| US11/565,400 US20080072929A1 (en) | 2006-09-22 | 2006-11-30 | Dilution gas recirculation |
| US11/846,359 US20080072822A1 (en) | 2006-09-22 | 2007-08-28 | System and method including a particle trap/filter for recirculating a dilution gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200821402A true TW200821402A (en) | 2008-05-16 |
Family
ID=39201842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096135769A TW200821402A (en) | 2006-09-22 | 2007-09-26 | System and method including a particle trap/filter for recirculating a dilution gas |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2082077A2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2010504436A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20090058027A (cg-RX-API-DMAC7.html) |
| TW (1) | TW200821402A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2008036849A2 (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI596645B (zh) * | 2015-05-22 | 2017-08-21 | 台灣積體電路製造股份有限公司 | 電漿加工系統及在半導體製造中用於控制電漿的方法 |
| CN111430281A (zh) * | 2020-05-25 | 2020-07-17 | 中国科学院微电子研究所 | 一种反应腔室、反应腔室的控制方法及半导体加工设备 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101000296B1 (ko) * | 2008-09-10 | 2010-12-13 | 세메스 주식회사 | 기액 분리 장치 및 이를 포함하는 기판 처리 장치 |
| EP2599537A4 (en) | 2010-07-30 | 2014-09-17 | Jx Nippon Oil & Energy Corp | GAS PROCESSING SYSTEM |
| GB2489975A (en) * | 2011-04-14 | 2012-10-17 | Edwards Ltd | Vacuum pumping system |
| JP5598454B2 (ja) * | 2011-10-20 | 2014-10-01 | 信越半導体株式会社 | 有害物除去装置 |
| KR102062317B1 (ko) * | 2013-04-24 | 2020-01-06 | 삼성디스플레이 주식회사 | 가스 정제 장치 및 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6206970B1 (en) * | 1997-09-03 | 2001-03-27 | Micron Technology, Inc. | Semiconductor wafer processor, semiconductor processor gas filtering system and semiconductor processing methods |
| US6206971B1 (en) * | 1999-03-29 | 2001-03-27 | Applied Materials, Inc. | Integrated temperature controlled exhaust and cold trap assembly |
-
2007
- 2007-09-20 EP EP07842916A patent/EP2082077A2/en not_active Withdrawn
- 2007-09-20 WO PCT/US2007/079084 patent/WO2008036849A2/en not_active Ceased
- 2007-09-20 KR KR1020097008138A patent/KR20090058027A/ko not_active Withdrawn
- 2007-09-20 JP JP2009529405A patent/JP2010504436A/ja not_active Withdrawn
- 2007-09-26 TW TW096135769A patent/TW200821402A/zh unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI596645B (zh) * | 2015-05-22 | 2017-08-21 | 台灣積體電路製造股份有限公司 | 電漿加工系統及在半導體製造中用於控制電漿的方法 |
| US10395918B2 (en) | 2015-05-22 | 2019-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for controlling plasma in semiconductor fabrication |
| US10867787B2 (en) | 2015-05-22 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling plasma in semiconductor fabrication |
| CN111430281A (zh) * | 2020-05-25 | 2020-07-17 | 中国科学院微电子研究所 | 一种反应腔室、反应腔室的控制方法及半导体加工设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2082077A2 (en) | 2009-07-29 |
| WO2008036849A2 (en) | 2008-03-27 |
| WO2008036849A3 (en) | 2008-06-12 |
| KR20090058027A (ko) | 2009-06-08 |
| JP2010504436A (ja) | 2010-02-12 |
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