TW200818360A - Semiconductor package and fabricating method thereof - Google Patents
Semiconductor package and fabricating method thereof Download PDFInfo
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- TW200818360A TW200818360A TW096136764A TW96136764A TW200818360A TW 200818360 A TW200818360 A TW 200818360A TW 096136764 A TW096136764 A TW 096136764A TW 96136764 A TW96136764 A TW 96136764A TW 200818360 A TW200818360 A TW 200818360A
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Description
200818360 25734pif.doc 九、發明說明: 【發明所屬之技術領域】 本發明是有關於-種半導體晶片封裝(semiconductor
Chip package )及其封裝系統,特別有關於一種藉由外部端 子(external terminal)以電性及物理性連接到電路板 導體晶片封裝及其封裝系統。 【先前技術】 Ο ο 隨著微電子工業不斷地開發日益複雜且具有極小特徵 =寸,裝置’產生可靠的互連系統為—大挑戰。將晶片封 衣附者於複合印刷電路板(PCB)上的相方法是利 拇陣列(ball grid army,BGA)配置。在這種配置中,焊球 如滅)在晶片封裝和PCB之間提供電性和機械性 用於將晶片封賴接到PCB㈣程—般包括一個或 循f,例如焊料回流步驟。同樣,可靠性測試可 溫賴環來模擬最終裝置的操作環境。在 ^封裝基板的熱膨脹係數 之間的 rrmhennai Ε—,cte)和 pcb 的咖 封i基板生應力。產生的應力同時與晶片 因此,CTF H間的 失配以及溫度變化成正比。 生相當大的應溫度的變化過大會在谭球處產 小的裂缝’都可』 將景伽裝置的操作可靠性。具體而言,當=‘ 6 Ο ο 200818360 25734pif.doc ’導電的有效區域減小,因此增加了連 再,如果裂缝例如藉由重複的溫度至 間的開路連接。 下用狀曰曰片封裝和PCB之 圖1是顯示具有接合墊(b〇ndpad) 裝2與具有接觸墊(—_)8的曰曰2 裂缝谭球1 2的顯微照片。如圖1所示,在_連接 縫的地方是焊球2輕接到接合塾4或接觸J上 的角洛之-。這顯示於圖】的細節A和B中。心塾= 也可以形成於焊球3的中心部。圖】於細 二、 已沿著焊球3整個賞声椎广并“从菩丨 P 节還#不了 B釦度進 的裂縫。顯示於細節A、 ^和C内的裂縫可以導致谭料連接 1
Oh等人的美國專利第6,959,856號(“〇h”)中 二,焊球内的裂缝蔓延最小化的方法。於 屬:起肷入焊塊(solderbump)。金屬突起作為裂缝黛延 的ί1 早域。然而,儘管Oh的结構可 、又 Φ ^ ^ 、 了乂,咸小裂縫的蔓延以避 =力t 不能補救由於焊塊内的裂縫而產生的阻 需要-種使裂缝蔓延達到最小化且使裂縫所 k成的烊球連接之阻力最小化的方法。 【發明内容】 2 本發明的實施例提供-種半導體裝置,包括基板,設 200818360 25734pif.doc 置於基板上的電極墊,設置於電極墊上的外部端子,從電 極墊延伸至外部端子内的容器以及設置於容器内部的 液體。導電液體在暴露於空氣中時固化。當外部端子内= 成裂縫時,容器能抑制裂鏠的蔓延。進一步,如果裂縫使 容器破裂,導電液體填充裂缝且其在暴露於空氣中時能於 裂縫内固化。還提供了一種形成包括具有導電液體的容哭 的半導體裝置的方法。 Ο “根據本發_實施例,藉由容器抑制外部端子内裂縫的 一步’如_造成容器破裂,來自容器的導電 明文二::?缝,恢復連接的阻输生。因此,根據本發 二二 1性晶片封裝和PCB之間的連接比習知方法具有 【實施方式】 明的面地描述本發明,其中咐 、彳^例。;,本發日何藉由許多不 ::不f解釋為健於本申請所閣述的特定實施例。;3 c 些實施例使得本公開内容更加;徹 f知此項技藝者傳達本發明的範圍。:: •了放大。 £域的尺寸以及相對尺寸進行 要理解,當元件或層被稱為“位於” 到另一元件或層之上時,、連接或耦接,, 該其他元件或層上或者可 位於、連接或耦接到 元件被稱為“直接位於”、間,70件或層。相反,當 接連接”或“直接耦接,,到另_ 8
Ο 200818360 25734pif.doc 元件或層之上時,不存在中間元件或 八 號表示類似的元件。如本t請所使用^ == 相關列舉項目中的-項❹項的任意以及所或包括 除非以其他方式限定,本申請所使用的所有^ ,技術術語以及科學術語)所具㈣含義與本發明所屬(領 域的熟知此項技藝者所普遍理解的I義相同。進一牛理 解:術語(例如通用字典中定義的那些術語)的含ς 釋爲與其在相關領域的情況下的含義—致,並且除: 請明確限定侧不應㈣想化或者過度正柄方式解釋。 圖2是根據本發明一些實施例之外部端子和延伸容器 的橫截面圖。 參照圖2,根據一些實施例,半導體晶片封裝1〇〇包 括半導體基板10、設置於基板10上的電極墊12、位於電 極墊12上的外部端子2〇、設置於外部端子2〇内的延伸容 器22,以及位於延伸容器22内部的導電液體以。基板ι〇 可以包括保護層14以及絕緣層16。絕緣層16界定出暴露 於電極墊12的開口。絕緣層16可以包括無機材質,例如 聚醯亞胺材質。 、 半導體晶片封裝100包括設置於電極墊12上的凸塊下 金屬化層(Under-Bump Metallization,UBM) 18。UBM 18 可以改善外部端子20和電極墊12之間的可濕性。UBM i8 可以包括b午多層薄層並且可以包含Cu、Au、Ni、Cr气复 合金中的一種或多種,並且可以藉由本領域習知的方法形 成。外部端子20可以是焊球、焊塊、導電球、導電塊或者 9 200818360 25734pif.doc 本領域習知的用於將接合墊連接到接觸墊的任何方式。 Ο ο 容器22主要是由外部端子2G支撐或者可以 極墊12、UBM 18和/或接觸墊52上(如圖3所示)。電 一步說明,容器22的端部可以部分插入電極墊12 。進 接觸墊52之溝槽或二者之溝槽内。容器22的端部還舞稽、 肷入UBM 18 (未圖示)。例如如圖2所示,容器u以 部直接接觸UBM 18的頂面。容器22可以實質f為柱^端 另外,容器22可以是能夠容納導電液體24、的任何延:形 狀,包括但不限於中空的矩形以及中空的三角形。 ν 導電液體24的一部份24a可以藉由於延伸容器22 的-端或兩端暴露於线中而形成。導電液體24可以°° 導電材質,例如金屬,並在暴露於空氣巾時固化。因而, 導電液體24的-部份施在暴露於空氣中時可以是固體, 以便將剩餘導電液體24密封於容器22内。具體來說, 電液體24的-部份24a在暴露於空氣中時變為固體兄但容 器22内的剩餘導電液體24除非暴露於空氣巾,將一 直保持液態、。導電液體24T叹低雜的可流動材 如金屬貧、導電墨水以及奈米金屬溶膠。例如 麟 24可以是導電墨水或奈米墨水材質,例如韓利J 1〇-2_043484 號,第 1〇_2〇〇6〇〇u〇83 號以寻 1 1〇侧7_遍號所描述的_,本申請藉轉考結^ 其内容。«-些實補’導電液體24邮性可 到,約”。爲了形成具有適t黏性的導液 體,可以在導電液體24中加入有黏性的材料。 10 200818360 25734pif.doc 圖3疋根據本發明一些實施例之將 =:Γ:外部端子和延伸容器的橫截_ = 片=::怎=施例之已經接合到電路板上的半導體晶 蒼照圖3和圖4,半導體晶片封裝⑽藉 2〇接合到電路板50上。電路板50可以包括用以叙接
Ο 接:墊52。接觸墊%可包括溝槽54,並且 I伸夺22可以在電路板5〇接合到半導體晶片封 上時延伸到制54内。制54可以完全穿透接觸塾52 或者可以僅部份穿透接騎Μ。具體來說,料5 穿透接觸墊52到職深度。如圖5所示,敢深度可 應外部端子20突出於容器22的長度。溝槽54可以於 準接觸墊52並且為容器22提供附加的機 械性支撐。更進—步,藉由容1122與溝槽54的嗜合,六 ,22可以對:導體晶片封裝議和電路板5。施加二外ς 端子20上的男切應力(sheer stress )提供阻抗。接觸 可以包括導電材質,例如如本領域習知的金屬。 圖5是根據本發明一些實施例之外部端子和延 抑 的橫截面圖。 〜裔 圖5的半導體晶片封裝1〇類似於圖2的半導體晶 裝’但半導體晶片封裝105的延伸容器22包括延伸到外^ 端子20的頂面上的部份22a。如上文討論的,容器a〕^ 的這個部份22a可以與電路板50内的溝槽54嚙合(如囷 3所示)。同樣的,延伸到外部端子2〇的表面外部的容二 11 200818360 25734pif.doc 22的這個部份22a可以用於穩定 P C B 5 0之間的連接。同理 ζ體曰曰片封叙1 〇 5和 PCB接合在一走已日士 μ从 田半‘體晶片封裝105與 封裝105*PCB;準。當助於將半導體晶片 空氣中時,導電液體“二分m=a暴露於 圖6是根據本發明一實施夺曰固化。 Ο ο 突起=容:r導體晶片封裝丄:及多個
和突。挺伸容器U 伸容器並且容納導電液體。突2、=伸=22的延 材質可以舆延伸容器22内的材_ 部的導電液體的 部22b可以實質上完全是赛材^目同或不同。再者,突起 質製成。貝u疋w的’並且由導電或非導電材 圖7是根據本發明一些實施例之 的延伸容器的半導體晶片封|的橫截面^成於電極墊上 ,雷=圖,7, 一種製造半導體晶㈣裝的方法可以包括 η = 伸容器22。電極塾12可以包括麵 ^在這樹月況下’延伸容器22提供於聰18上。電極 延伸18可以包括溝槽,並且延伸容11 22可以 =到清槽内以便改善其間的_性。具體來說,電極墊 12 口聰4 18中的任意一個或二者均可包括溝槽(未圖示) ,且谷③' 22可以延伸到溝槽内。延伸容器22在被提供 =^2上以前’先填充導電液體24並可以切割成想要 的長度。在_延伸容H2、過財,暴露絲的導電液 12 200818360 25734pif.doc 暴φ露於空氣中時固化,因此密封容器22的端部。 並^並上㈣①例如可以#由提供銅板’將鋼板卷成筒狀 卫於/、上艘鎳而形成容器22。 r ο 的邱據本發明—些實施例之具有形成於電極墊上 礼填充的延伸容器的半導體晶片封裝的横截面圖。 芩照圖8, 一種製造半導體晶片封裝 =設置於半導體基板1G上的電極塾12上提 電極墊12可以包括UBM 18,在這種情況下 =供於UBM 18上。電極墊12和域ubm 18可以^ 並且延伸容器22可以延伸到溝槽内以便改善 ‘附性。延伸容器22—開始是中空的容器M旦卜的= 之後(例如在中线器提供到電極墊12上之後) & 電液體24。藉由將導電液體24注射到容器22内,而逡 ,液體24填充延伸容器22。可以利用容器22之 六 益22之外部間的壓力差’將導電液體24注入容哭2/、: =這種壓力差的方法可以大幅降低容器22内^氣泡二 =况。填充後,暴露於空氣中的導電液體2何以固化 句話說,在容器22填充之後暴露於空氣的導電液體以可 以固化,因此密封容器22的端部。 圖9是根據本發明-些實施例之具有形成於 的延伸容器和焊膏的半導體晶片封裝的横截面圖。 參照圖9,可以藉由將焊膏20a印刷到基板1〇上 =部端子20。具體來說,如本領域習知的,焊膏如^以 藉由絲網印刷(screen printing)製程或任何其他"傳統 13 Ο Ο 200818360 25734pif.doc 上。焊膏20a可以實質上包圍延伸容器22 ^觸$極塾12和/或UBM 18。谭膏2〇a可以受到 '用而形成外部端子20。如本領域習知的,珲膏2〇^可 S::統痒料、無鉛焊料(—知〇或任何其他 極墊I:外一些實施例之具有插入形成於電 面圖。 延伸容器的半導體晶片封裝的橫截 智^圖心根據一些實施例’可以在谭膏加和/或外 2°0二外·Π於基板1〇上之後,將延伸容器22插入焊膏 敎牛= ° Μ來說,在印刷製程之後^ m:將谷器22插入焊膏施,或者可以在加埶步 =之t將容器22插人外部端子2G。藉由控端^ ==兄Γ在不損壞容器22並且不改變外部端子 =μ插入外部端子2G之前,導電液體 = 可能因暴露於空氣中而固化。另一十品,丨切2如 =二將,電_密封在容器二如 密封於容;22内!^執仃塗覆製程,以便將導電液體24 電路i上的些實施例之由外部端子接合到 括裂紋或裂缝 封装的橫截面圖’該外部端子内包 14 200818360 25734pif.doc 到應力作用時,外Α卩端子20例如在加熱步驟過程中受 容器22的存在可20内會有裂缝或裂㈣形成。 樣,裂縫28可以使容^破縫28蔓延於外部端子2〇内。同 裂時,導電液體24 破裂。當裂縫28使容器22破 部份填充裂鏠28。導^分冰會離開容器22並且至少 充裂缝28。離開容哭=文 的一部份24s可以完全填 Ο 暴露於空氣中並且固。化之導電液體24的—部份冰可以 Μ的-部份24s可以形成導電材質。因此,導電液體 機械穩定性。更進_/,二裂缝亚且恢復外部端子2〇的 it ^蛤电液體24的一部份24s可以將 :同::的阻抗特性恢復到與裂縫心現之前實質: 充右ΐΐ文:描述的,本發明之實施例提供了—種包括埴 充有導電液體之容器的外部端子。藉 ^括填 υ 内。更進-步,如果裂缝造成 導電液體至少部份填充裂缝,改善或恢復i接= 間的連接比習知方法具有改良的可^生曰曰。片封襄和咖之 整個說明書中,參照“一個實施例,,或“多個,,a 此實施例所描述的特定特徵、結構或、= 务明中的—個實施例。因而,在整個說明了 ^ 現的短語如“在一實施例中,,或者“在實施例曰中”,^位,出 ,同-個實施例。此外’特定特徵、結構或特性= 一個或多個實施例中以任何適當方式組合。 在 15 200818360 25734pif.doc 為多個單一步:理::發明的實施方式,各種操作被描述 序執行。相關的或者是步驟必須按照呈現該步驟的順 --Lj^ 要的細節,i所ίΐ縣發明的描述更清楚以及避免不必 〜斤週知的結構以及裝置皆未顯示。 Ο ο 刖处内容是為了讓本發明的立音 成是對其的限制。儘管僅描述了本;明:::會:卿 屬技術領域中具有通常知識者應該知道=脫; 本發明之精袖知# m W 、,, 通’在不脫離 所有的潤_ g H ^ *可^^些許之更動與潤飾。因而, 明在描述中,皆使祕伸容絲敘述本發 方式延伸是延伸的或者是以不同於附圖所顯示的 因而,要理解^延伸容器具有相同功能即可。 解釋成限制於;發明的不意,而本發明不被 飾的貫施例,而其他經由更動與潤 圍者^本”專利範圍内。因此本發明之保護範 田見後附之申請專利範圍所界定者為準。 【圖式簡單說明】 藉由參照附圖的詳細示範性實施例中的描述,本發明 、上述以及其他特徵更加顯而易見,其中: 縫 圖1是顯示半導體晶片封裝與印刷電路板之間的裂 的焊球的顯微照片。 圖2是根據本發明一些實施例之外部端子及延伸容器 16 200818360 25734pif.doc 的橫截面圖。 圖3是根據本發明一些實施例之將半導體晶片封袭接 合至電路板的外部端子及延伸容器的橫截面圖。 圖4是根據本發明一些實施例之已經接合至電路 半導體晶片封裝的橫截面圖。 、 圖5是根據本發明一些實施例之外部端子及延伸容器 的橫截面圖。 Ο ϋ 圖6是根據本發明一實施例之包括外部端子及多個 起部的半導體晶片封裝的橫截面圖。 圖7疋根據本發明一些實施例之具有形成於電極墊上 的延伸容器的半導體晶片封裝的橫截面圖。 ⑽圖8是根據本發明—些實施例之具有形成於電極塾上 的箱填充的延伸容器的半導體晶片封裝的橫截面圖。 ㈣Π是根據本發明—些實施例之具有形成於電極墊上 的延伸容ϋ及焊㈣半導體晶㈣裝的橫截面圖。 圖1〇是根據本發明—些實施例之具有插人形成於電 面圖。的外部電極内的延伸容器的半導體晶片封裝的橫截 括裂縫。,心彳衣的域面圖,該外部端子内包 【主要元件符號說明】 2:半導體晶片封裝 3:焊球 17 200818360 25734pif.doc
4 :接合墊 6 :電路板 8 :接觸墊 10 :半導體基板 12 :電極墊 14 :保護層 16 :絕緣層 18 : UBM 1 20 :外部端子 20a :焊膏 22 :延伸容器 22a :延伸容器的一部份 22b :突起部 24 :導電液體 24a :導電液體的一部份 24s :導電液體的一部份 C/ 28 :裂缝 50 :電路板 52 :接觸墊 54 :溝槽 • 100 :半導體晶片封裝 105 :半導體晶片封裝 A、B、C :細節 18
Claims (1)
- Ο υ 200818360 25734pif.doc 十、申請專利範圍·· ι·一種半導體裝置,包括: 半導體基板; 設置於所述半導體基板上的電極塾; 设置於所述電極墊上的外部端子, · 從所述電極塾延伸到所述外部端子内的容器 ;以及 設置於所述容器内部的導電液體。 、2.如申請專利範圍帛1項所述之半導體裝置,其中所 述導電液體在暴露於空氣中時固化。 …3·如申請專利範圍帛1項所述之半導體裝置,其中所 述‘毛液體的黏性在大約1〇cps到大約5〇〇〇cps的範圍内。 4·如申請專利範圍第1項所述之半導體裝置,其中所 述導電液體包括金屬。 、5·如申請專利範圍第1項所述之半導體裝置,其中所 述導電液體包括金屬f、導電墨水或奈米金屬溶膠。 6·如申請專利範圍第丨項所述之半導體裝置,更包括 位於:述電極墊上的凸塊下金屬化層(UBM),並且其中 所述容ϋ直接朗崎UBM的細或麵述容器嵌二所 述 UBM。 .7.如中請專利範圍第]項所述之半導體裝置, 述谷裔直接接觸所述電極墊。 、 8. 如巾請專利範㈣所述之半導體裝置, 述電極墊包括溝槽並且所述容器延伸到所述溝槽内。 9. 如申請專利範圍第1項所述之半導體裝^,其中所 19 200818360 25734pif.doc 述容器於所述外部端子的頂面上方延伸。 10·如申明專利範圍第1項所述之半導體筆置 勺 設置於所述外部電極内的一個或多個突起部。 更 11.如申請專利範圍第10項所述之半導體壯 所述突起部是實心的。 衣置’ /、 Ο CJ 12·如申請專利範圍第1〇項所述之半導體穿 各所述突起部分別包括設置於其中的導電液體,,广 13·如申請專利範圍帛丨項所述之半導體|置,更包 電路板;以及 電路板和所述 對應於所述電極墊的位置而設置於所述 外部端子之間的接觸墊。 14.如申請專利範圍第13項所述之半導體 所述接觸墊包括形成於其中的溝槽,並且其^述= 所述電極墊延伸,經過所述外部端子 ςς 所述溝槽内。 W建接觸塾的 15.如申請專利範圍帛13項所述之半導體 所述接觸純括貫穿其㈣成的貫孔,並且 ' 述^ 延伸經過所述貫孔。 、斤处谷态 16· —種半導體裝置,包括: 半導體基板; ,置於所述半導體基板上的電極墊; $ 又置於所述電極墊上的外部端子; 設置成從賴f極敏侧所述外部端子_延伸容 20 200818360 25734pif.doc 電路板; 設置於所述電路板和所述外部端子之間的接觸塾·, 所述外部端子内部的裂縫,所述裂縫從所述延伸容器 的外壁延伸到所述延伸容器;以及 設置於所述延伸容器和所述裂縫内部的導電材質。 17.如申請專利範圍帛16項所述之半導财置,、其中 所述導電材質是原本為液體的固體。 、 ^ f) W · —種半導體裝置,包括: 半導體基板, 設置於所述半導體基板上的電極墊; 設置於所述電極墊上的外部端子;以及 在所述外部端子内延伸的裂縫, 其中所述裂缝至少部份填充有由導電液體固化而成的 導電材質。 19·一種製造半導體裝置的方法,所述方法包括·· 於半導體基板上形成電極墊; ί ) / 於所述電極墊上形成容器,使得所述容器從所述電極 蟄延伸,其中所述容器容納導電液體;以及 於所述電極墊上並於所述容器周圍形成外部端子。 20.如申請專利範圍第19項所述之製造半導體裝置的 方法,其中形成所述容器包括: 於所述電極墊上形成中空容器;以及 用導電液體填充所述中空容器。 21 200818360 25734pif.doc 21·如申請專利範圍第19項所述之製 方法,其中所述導電液體在暴露於空氣中時固^體衣置的 22·如申請專利範園帛i 。 方法,其中所述導電液體的黏性在大導體装置的 5000cps的範圍内。 CPS到大約 23. 如申請專利範園第19項所述之製 方法,其中所述導電液體包括金屬。 ¥體震置的 24. 如申請專利範圍第19項所述之製 方法,其中所述導電液體包金屬 衣置的 溶膠。 电墨水或奈米金屬 25二申請專利範圍第19項所述之製造 方法,更包括將所述容器切割成想要的長戶。⑭衣置的 26.如申請專利範園第乃項所 二 方法,其中藉由切割所诚玄哭;-命 ^ 〇+蛤粗裝置的 部分,會藉由暴露於空氣中路的所迷導電液體的-27·如申,專利化,以便密封所述容器。 ϋ 方法,其中形成所‘二;=述之製造半導趙裝置的 容器=膏=於所述半導體基板上,所述焊膏位於所述 加熱所述焊膏以便形成焊球。 28·,申明專利氣圍第19項所述之製造半導體裝置的 ::所=括於所述電極墊内形成溝槽,其中所述容器 29.如申凊專利無園第19項所述之製造半導體裝置的 22Ο 200818360 25734pif.doc 方法,更包括於所述電極墊上形成一個或多個突起部。 30·—種製造半導體裝置的方法,所述方法包括·· 於半導體基板上形成電極塾; 於所述電極墊上形成外部端子;以及 將延伸谷裔插入所述外部端子,所述延伸容器容納導 電液體。 31·如申請專利範圍第3〇項所述之製造半導體裝置的 方法,其更包括於所述電極墊上形成凸塊下金屬化層 (UBM),並且其中所述容器直接接觸所述υβΜ的頂表 面或者所述容器嵌入所述UBM。 32·—種製造半導體裝置的方法,所述方法包括: 於半導體基板上形成電極墊; 於所述電極墊上形成外部端子,所述外部端子包括容 納導電液體的延伸容器; 於所述外部端子内產生應力以便於所述外部端子 成裂縫;以及 7 用來自所述延伸容器的所述導電液體至少部份埴 述裂缝。 ^ 33·如申請專利範圍第32項所述之製造半導體裝置的 方法,其中產生所述應力包括執行熱處理。 34·如申請專利範圍第32項所述之製造半導體裝置的 方法,其杨成外部端子包括將所述延伸容器插 、 部端子。 、外 35·如申請專利範圍第34項所述之製造半導體裝置 23 200818360 25734pif.doc 方法,其t形成所述外部端子包括印刷焊膏且更包括於插 入所述延伸容器後加熱所述焊膏以便形成焊球。 36·如申睛專利範圍第32項所述之製造半導體裝置的 方法,其中形成所述外部端子包括: 於所述電極墊上形成所述延伸容器使得所述延伸容器 從所述電極墊延伸;以及 W 於所述電極墊上與所述容器周圍形成所述外部端子。 37·如申请專利範圍第36項所述之製造半導體裝置的 方法,其中开>成所述外部端子更包括用所述導電液體填充 所述延伸容器。 38·如申請專利範圍第32項所述之製造半導體裝置的 方法,其中所述導電液體在暴露於空氣中時固化。 39·如申請專利範圍第32項所述之製造半導體裝置的 方法,其中形成所述電極墊包括於所述電極墊内形成溝 槽,其中所述延伸容器延伸到所述溝槽内。 40· —種半導體裝置,包括: (J 半導體基板; 設置於所述半導體基板上的電極墊;以及 設置於所述電極墊上的外部端子,其中所述外部端子 • 包括導電液體。 - 41.如申請專利範圍第40項所述之半導體裝置,更包 括設置於所述外部端子内的延伸容器,其中所述導電液體 設置於所述延伸容器内。 岐 42·如申請專利範圍第40項所述之半導體裝置,其中 24 200818360 25734pif.doc所述導電液體配置為在暴露於空氣中時固化。 U 25
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