TW200805673A - Method for fabricating polysilicon film - Google Patents

Method for fabricating polysilicon film Download PDF

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TW200805673A
TW200805673A TW096119115A TW96119115A TW200805673A TW 200805673 A TW200805673 A TW 200805673A TW 096119115 A TW096119115 A TW 096119115A TW 96119115 A TW96119115 A TW 96119115A TW 200805673 A TW200805673 A TW 200805673A
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layer
substrate
seed layer
annealing process
forming
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TW096119115A
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Ramesh Kakkad
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Tpo Displays Corp
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

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  • Thin Film Transistor (AREA)

Description

200805673 九、發明說明： " 【發明所屬之技術領域】 本發明係關於^一種製作多晶秒薄膜之方法。 【先前技術】 由於液晶顯示旨具有㈣輕薄、耗電量少以及無|帛射污染等 特性，故已被廣泛地應用在筆記型電腦、個人數位助理(PDA)等攜 礞帶式貢訊產品上。然而隨著使用者對於顯示器視覺感受要求的提 幵，加上新技術應用領域不斷的擴展，於是更高晝質、高解析度 且具低價㈣平賴示n變絲來顧示技術發展_勢，也造就 了新的顯示技術發的原動力，而低溫多晶㈣膜電晶體(low temperature polysilicon thin film transistor，LTPS TFT)除了具有符合 主動式驅動(activelydrive)潮流的特性外，其技術是達 的一項重要技術突破。 着 請麵第1圖，第1圖為習知製作-低溫多晶石夕薄膜之示意 圖如第1圖所不，首先提供一基底1〇，例如一由玻璃所構成的 基底。然後職-由氧化⑪魏切賴成的阻隔層12於基底 上’且阻隔層12具有一非晶體結構。接著形成—非晶帅麵細s siHcon)層Μ於阻隔層12上，並利用準分子雷射對非晶石夕層丨斗進 行-雷射退火製程16，使非晶石夕層14產生一結晶化現象 (crystallization)。 200805673 -般而言，在結晶化的過程中，非晶石夕層i41經歷融化與再 生(regrowth)的步驟而形成—多祕層，且多晶⑪層的晶粒尺寸會 取决於=射退火製程巾的能量。舉絲說，多祕層巾的晶粒尺 lit著田射i里的提升而增加，朗—足以完全融化該石夕層的 里單位亥月b里單位係通稱為一完全融化臨界點㈣l_mdt threshold)。當雷射能量猶或超财全融化轉點時，多晶石夕層 中^粒便會再次料，進騎彡小結晶體_麵yStalline)i =恶。此現象畅於#非晶㈣14在非晶體阻隔層Η上成長時， =纽化臨界點下，晶姉udeus)無法存活，錄後續進行冷卻 蚪，5午多微小的晶核會形成’進而形成許多微小的晶粒。因 2為了有效增加晶㈣尺寸與均勻性，f知於結晶化過程中必 =將=射能量控·完全融化臨界點之下1此麵下的雷射能 ^亦即所需㈣程齡通_為1Q議…。然而，在這麼小 所^IT"，f知製作多祕薄_，由於空暖異以及每次 II射能量有變異’會造成秒晶體的品質不均且再現性不 二=將會使謝的晶粒無法達到所需繼 因此界點的重要因素係為⑦層的厚度， 二=射製程間的變異量影私層的厚度， ::衝:習^^^ ::捕非曰曰㈣的各區域進行處理，以達到均句的晶格分 概況下’使用者必須對非岭層進行至少2G至40道 200805673 的雷射脈衝處理，顿得均勻的晶粒大小。然而，隨著雷射脈衝 次數的增加，雷射退讀程的整體鱗將無可避免的降低。 【發明内容】 、因此本發明之主要目的顧供—種製作多祕細的方法， 以有效提升多晶矽薄膜之均勻性。 本發明係揭露-種製作多祕薄膜之方法。首絲成一晶種 層(__极一基底之一表面，然後形成一石夕層於該晶種層之表 面接著進仃φ射退火製程，使該石夕層轉換為一多晶石夕層，且 該雷射敎雜之綺敍於轉於—可完全概财層之能量。 本發日蝴卜晶種層設置於非晶销與阻隔層之間， 本發明可藉纽晶御來大幅提升雷 …曰之a日格結構係對應該非晶砍層之晶格結構。值得注意的是， 射能量的範圍，亦即增加矽 層進行結晶化過程中的製程範#，以有效降低形成均勻抑曰 左射的雷射脈衝數量、提升產能、降低成本、以及二而 矽層的晶格特性與薄膜電晶體的性能。 ，夕晶 【實施方式】 請^第2圖，第2_本❹雜佳魏 膜之示思圖。如第2圖所示，首先提供― 夕阳 破璃所構成的基底。秋後料n 月基底20，例如 …、後軸-_切錢切 200805673 體阻隔層22於透明基底20上。接著進行—賤鑛(s_er㈣製程、 原子沈積(atomic layer deposition)製程、蒸鍍(evap〇rati〇n)製程或一 化學氣相沈積(CVD)製程，以形成一具有結晶結構的晶種層以於 阻隔層22上。隨後再進行一化學氣相沈積製程或一濺鑛製程，以 形成一非晶矽層26於晶種層24表面。 根據本發明之較佳實施例’晶種層24的厚度係介於5⑻埃至 Φ 5000埃，且晶種層24可具有結晶特性㈣祕_以及一結晶結 構。因此’藉由調整晶種層24的結晶特性與晶格排列方向 (orientation) ’使时可有效控做射祕_的結晶特性與晶 格排列方向。其次，晶種層24的晶粒尺寸係介於鄉埃至5_ 埃’且晶種層24的晶格結構可對應後續退火製程巾由非晶石夕層％ 而形成的一多晶矽層的晶格結構。此外，晶種層24可由氧化錦 (ceriumoxide)、氟化鈣㈣ciumfluoride)或氧化錯⑵麵i聰 所構成。 接著於沈積非晶石夕層26後進行-雷射退火製程28，例如一準 分子雷射退火(excimer laser annealing)製程或固態雷射退火 (solid-state laser ambling)製程，使非晶矽層26產生一結晶化現 象。-般而言’雷射退火製程的能量可大於或等於—可二融化 石夕層的能f ’如先騎述之完全祕臨界點，且完全 的能量係取決於判的厚度、雷射職長叹雷射_的範圍等 條件。根據本發明之-實施例，雷概火製程醜量可介於 200805673 一 —2至500遷m2之間，且雷射退 -射脈衝，例如二至十次之雷射脈衝。舉例來說，如本發 射對—厚度、_輪層進行處理，則= 火的此罝-叙會介於·mJ/cm2至35〇mj/cm2之間。 f想情形下，在結晶化的過程中，晶格對應的晶種層Μ可做 =-曰曰種材料，以促進非蝴26的生長。因此 ^能量超驗·_並物完全·非_二 王=’非晶铺26便會隨著晶格對應晶種層24的晶格結構而 成長，進而轉變為一多晶矽薄膜。 ▲曰由於多祕_的結晶特性係由晶種層24所控制，因此雷射 2量密度以及薄膜厚度的變異性將不會對多晶石夕薄膜的結晶特性 =顯著的影響。換句話說，本發明藉由晶種層24㈣制晶粒的尺 y以有效改善習知製作多祕_易於㈣能量大於完全融化 臨界點時產生微小結晶體的現象。 、此外，根據本發明之實關，由於多晶石夕薄膜的晶粒尺寸係 取决於阳觀24的結晶躲，g此本發财法可於減少雷射次數 的條件下形成大帕㈣晶粒。同時，根據本發明之—些實施例， 月可心加產里’對於既定產量下，可減少雷射器材的使用量， 進而降低器材、設施與維修的成本。 200805673 l 1 '、人使用者又可藉由調整晶種層24之晶格特性與晶粒的晶 才。排列方向來㈣_成之多祕_的晶格雜與晶粒的晶格 排列方向，舉例來說，使用者可沈積—具有高優勢排列㈣脚 rredoriented)(lll)^^^|^^ceri^ ^ — 同樣具有優勢排列的石夕層。 …根縣㈣之實關，本發日狀可縣神成之多晶石夕 春薄f進行加工，以形成複數個多晶石夕薄膜電晶體。够照第3圖 至第5圖’第3圖至第5圖為本發明製作一低溫多晶石夕薄膜電晶 體=意圖。如第3圖所示，首先提供一基底42，且基底42具有 一多晶石夕層44覆蓋其上。其中’多晶韻44係由先前所述之方 法所製作完成。然後進行一餘刻製程，以於多晶石夕層44上形成複 數個主動區域43。如第4圖所示’接著沈積—由氧化碎或氮化石夕 所^成的閘極絕緣層46於多晶石夕層44表面，並形成一由鶴或鉻 所組成的金屬層（圖未示)於閘極絕緣層46上。隨後形成一圖荦化 # ^層(圖未利於該金騎上，錢行__触，二一=刻 ^程’將圖案化光阻層作為-遮罩’以侧部分該金屬層並於多 夕層44上形成一閘極48。然後如帛5圖所示，移除該圖案化光 阻層，將閘極48作為-遮罩並進行—離子佈植製程，以於多晶石夕 f 44的主動區域43中形成一源極50與汲極52，進而完成一低溫 多晶矽薄膜電晶體邰的製作。 轉本發明之實細，本㈣又可將辆所製作之低溫
10 200805673 夕晶石夕薄膜電晶體應用於-顯示面板’例如—液晶顯示面板或一 有機發光二極體面板上。請參照第6圖，第6圖為本發明一實施 例之-液晶顯示面板㈤之示意圖。如第6圖所示，本發明之液晶 顯示面板60包含有-彩色濾^ 62以及—共同電極64設置於一 上基板66的下表面、-薄膜電晶體沾以及一晝素電極％設置於 一下基板72上以及-液晶層76設於上基板66與下基板72之間。 值得注意的是’賴電晶體68餘由切實施狀方法所製作完 成0 根據本發社又-實_，本發日収可將液晶顯示面板6〇庫 用於-電子裝置中。請參照第7圖，第7圖為本發鴨液晶顯示 面板60應用於-電子裝置9G之方塊示意圖。其中，電开置如 可為-個人數位助理(PDA)、數位相機、筆記型電腦、手持式電腦、 行動電話、或DVD触科可赋電子產品。電子裝置9〇包含 =曰日顯爾60及-輸入單元⑽。其中，輸入單論係輛合 液曰曰顯示面板6G並提供液晶顯示面板6()㈣ 影像訊號）’進岐液晶顯示帖顯示畫面。' 隔斤將一額外的晶種層設置於非晶石夕層與阻 :0之間雌曰曰種層之晶格結構係對應多晶矽層 本發明可藉由此晶種層來Α幅提升雷射 =二， 層進行結晶化過財㈣程鱗 的域_增加石夕 注射的雷射脈衝數量、提升產能成低形成均勻矽層所需 降低成本、以及改善後續多晶 200805673 « * 石夕層的晶格特性與薄膜電晶體的性能。 以上所述僅為本翻之較佳實施例，凡依本翻申請專利範 圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 幻圖為習知製作一低溫多晶㈣膜之示意圖。 弟2圖為本發明較佳實施例製作 第3圖至第5圖為本發明製作 阳夕_之示意圖。 第6圖為本發明—實施例之—夜日=夕__電晶體之示意圖。 第7圖為本發哪液晶顯料圖。 电十衣置之方塊示意圖。 【主要元件符號說明】 10 基底 12 14 非晶秒層 16 20 透明基底 22 24 晶種層 26 28 雷射退火製程 42 43 主動區域 44 46 閘極絕緣層 48 50 源極 52 60 液晶顯示面板 62 64 共同電極 66 夕晶t石夕層 彩色濾光片 12 200805673 68 多晶矽薄膜電晶體 70 晝素電極 72 下基板 76 液晶層 80 輸入單元 90 電子裝置
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Claims (1)

  1. 200805673 十、申請專利範圍·· i種製作多祕薄臈之方法，包含有： 形成-晶種騎eedla㈣於—基底之_表面； 形成一料_晶_之表n及 進行—雷概讀程，使财層職 退火製程之能量係大於或等於一可完全融化該; 2. =申請專利麵第1項所述之方法，財該基底係為一玻璃基 底0 如申請專利範圍第1項所述之方法，其中該方法另包含有形成 一阻隔層於該晶種層與該基底之間。 4. 如申請專利範圍第i項所述之方法，其中該石夕層包含非晶矽 (amorphous silicon)。 5. 如申請專利範㈣丨項所述之方法，其中形成該晶種層之步驟 係由一濺鍍(sputtering)製程、原子沈積______ 製程、蒸鍍(evaporation)製程或—化學氣相沈積(CVD)製程所達 成。 6·如申請專利範圍$ 1項所述之方法，其中形成該石夕層之步驟係 由化學氣相沈積製程所達成。 “ 200805673 7·如申請專利範圍第1項所述之方法，其中該晶種層之厚度係介 於500埃至5000埃。 8·如申睛專利範圍第1項所述之方法，其中該晶種層包含有一結 晶結構。 9·如申請專利範圍第8項所述之方法，其中該晶種層之晶格結構 係對應該多晶硬層之晶格結構。 10·如申請專利範圍第8項所述之方法，其中該晶種層之晶粒尺寸 係介於500埃至5000埃。 U•如申請專利範圍第1項所述之方法，其中該晶種層包含有氧化 鈽(cerium oxide)、氟化^(calcium fluoride)或氧化锆(zirconium oxide) ° 12·如申請專利範圍第1項所述之方法，其中該雷射退火製程包含 準分子雷射退火(excimer laser annealing)製程或固態雷射退火 (solid-state laser annealing)製程。 13·如申請專利範圍第1項所述之方法，其中該雷射退火製程之能 量係介於250mJ/cm2至500mJ/cm2之間。 _ 如巾請專利範圍第1項所述之方法’其中進行該雷射退火製程 15 200805673 之步驟包含有進行複數次雷射脈衝。 15. 如申請專圍第M項所述之方法’其中該雷射退火製程包 含有進行二至十次雷射脈衝。 16. —種薄膜電晶體，包含有： 一多晶韻，設置於―基底表面’該多轉層具有一主動區 域、一源極、以及一汲極； φ 一閘極絕緣層，設置於該多晶矽層上； 閘極層，設置於該閘極絕緣層上； 其中该多晶石夕層係由下列步驟所形成·· 形成一晶種層於該基底之表面； 形成一矽層於該晶種層之表面；以及、 、進行-雷射退火製程，使該㈣轉換為—多晶破層，且該雷射 _ 献製程之能量係大於或等於—可完全融化财層之能量。 17·—種顯示面板，包含有： 如申請專利範圍第16項所述之薄膜電晶體； —上基板’包含有-共同電極以及—彩色濾光㈣置於該上基 板之表面； —下基板’包含有-4素電極設置於該下基板之表面；以及 一液晶層’設置於該上基板與該下基板之間。 16 200805673 > 18. —種電子元件，包含有： 如申請專利範圍弟17項所述之顯不面板，以及 一輸入單元，耦合該顯示面板，該輸入單元係提供輸入訊號至 該顯示面板，以使該顯示面板產生畫面。
    十一、圖式： 17
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US7670886B2 (en) 2010-03-02

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