TW200802984A - Optoelectronic semiconductor chip - Google Patents

Optoelectronic semiconductor chip

Info

Publication number
TW200802984A
TW200802984A TW096114571A TW96114571A TW200802984A TW 200802984 A TW200802984 A TW 200802984A TW 096114571 A TW096114571 A TW 096114571A TW 96114571 A TW96114571 A TW 96114571A TW 200802984 A TW200802984 A TW 200802984A
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor
sequence
optoelectronic semiconductor
semiconductor chip
Prior art date
Application number
TW096114571A
Other languages
English (en)
Other versions
TWI381545B (zh
Inventor
Stefan Illek
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200802984A publication Critical patent/TW200802984A/zh
Application granted granted Critical
Publication of TWI381545B publication Critical patent/TWI381545B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
TW096114571A 2006-04-27 2007-04-25 光電半導體晶片 TWI381545B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006019725 2006-04-27
DE102006034847A DE102006034847A1 (de) 2006-04-27 2006-07-27 Optoelektronischer Halbleiterchip

Publications (2)

Publication Number Publication Date
TW200802984A true TW200802984A (en) 2008-01-01
TWI381545B TWI381545B (zh) 2013-01-01

Family

ID=38542466

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114571A TWI381545B (zh) 2006-04-27 2007-04-25 光電半導體晶片

Country Status (8)

Country Link
US (1) US8378371B2 (zh)
EP (1) EP2011160B1 (zh)
JP (1) JP5404386B2 (zh)
KR (1) KR101294911B1 (zh)
CN (1) CN101427392B (zh)
DE (1) DE102006034847A1 (zh)
TW (1) TWI381545B (zh)
WO (1) WO2007124708A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102132427B (zh) * 2008-10-20 2013-07-17 Lg伊诺特有限公司 发光器件及其制造方法
TWI406433B (zh) * 2009-03-17 2013-08-21 Tekcore Co Ltd Vertical gallium nitride based light emitting diode and manufacturing method thereof
TWI723002B (zh) * 2014-11-06 2021-04-01 荷蘭商露明控股公司 具有位於一頂部接點下方之溝渠之發光裝置

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DE102007020291A1 (de) 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Kontaktstruktur für einen derartigen Chip
US10463774B2 (en) * 2007-02-27 2019-11-05 Deka Products Limited Partnership Control systems and methods for blood or fluid handling medical devices
CN102037575B (zh) * 2008-03-27 2013-04-10 宋俊午 发光元件及其制造方法
DE102008035110A1 (de) * 2008-07-28 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR20110049799A (ko) * 2008-08-19 2011-05-12 라티스 파워(지앙시) 코포레이션 양면 패시베이션을 갖는 반도체 발광 디바이스 제작 방법
KR101047634B1 (ko) * 2008-11-24 2011-07-07 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TWI389355B (zh) * 2009-01-05 2013-03-11 Epistar Corp 發光半導體裝置
KR100969126B1 (ko) 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
KR20100122998A (ko) * 2009-05-14 2010-11-24 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101007140B1 (ko) 2009-07-28 2011-01-10 엘지이노텍 주식회사 발광 소자
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101631599B1 (ko) * 2009-12-02 2016-06-27 삼성전자주식회사 발광 소자 및 그 제조 방법
KR101039946B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
CN102237464B (zh) * 2010-04-26 2013-07-03 亿光电子工业股份有限公司 发光二极管结构及其制作方法
SG185547A1 (en) * 2010-05-18 2012-12-28 Agency Science Tech & Res Method of forming a light emitting diode structure and a light emitting diode structure
JP5801542B2 (ja) 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
US8283652B2 (en) * 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
US20130001510A1 (en) * 2011-06-29 2013-01-03 SemiLEDs Optoelectronics Co., Ltd. Optoelectronic device having current blocking insulation layer for uniform temperature distribution and method of fabrication
US9419182B2 (en) * 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
US8816379B2 (en) 2012-05-17 2014-08-26 High Power Opto, Inc. Reflection curved mirror structure of a vertical light-emitting diode
US8546831B1 (en) * 2012-05-17 2013-10-01 High Power Opto Inc. Reflection convex mirror structure of a vertical light-emitting diode
US8748928B2 (en) 2012-05-17 2014-06-10 High Power Opto, Inc. Continuous reflection curved mirror structure of a vertical light-emitting diode
DE102012110836A1 (de) 2012-11-12 2014-02-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
JP2016528728A (ja) * 2013-07-18 2016-09-15 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 高反射フリップチップｌｅｄダイ
FR3054725B1 (fr) * 2016-07-26 2019-05-17 Institut Polytechnique De Grenoble Dispositif optoelectronique et son procede de fabrication
US10643980B2 (en) 2018-01-23 2020-05-05 Epistar Corporation Light-emitting device, manufacturing method thereof and display module using the same
KR102596625B1 (ko) 2021-11-15 2023-11-02 조대성 숯불 구이기 및 숯불 구이기용 메인기어모듈

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JPH0715038A (ja) * 1993-06-21 1995-01-17 Toshiba Corp 半導体発光素子
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US6057562A (en) * 1997-04-18 2000-05-02 Epistar Corp. High efficiency light emitting diode with distributed Bragg reflector
US5789768A (en) * 1997-06-23 1998-08-04 Epistar Corporation Light emitting diode having transparent conductive oxide formed on the contact layer
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JP2001223384A (ja) * 2000-02-08 2001-08-17 Toshiba Corp 半導体発光素子
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
JP2004088083A (ja) 2002-06-25 2004-03-18 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及びその実装方法
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
WO2004032248A2 (de) * 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
US6995401B2 (en) * 2002-10-23 2006-02-07 Shin-Etsu Handotai Co., Ltd. Light emitting device and method of fabricating the same
US7041529B2 (en) * 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
DE10346606B4 (de) 2003-08-29 2012-03-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
JP2007504639A (ja) * 2003-08-29 2007-03-01 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 放射放出半導体素子
DE10346605B4 (de) 2003-08-29 2022-02-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungemittierendes Halbleiterbauelement
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
JP2005123409A (ja) * 2003-10-16 2005-05-12 Shin Etsu Handotai Co Ltd 発光素子
EP1709694B1 (de) * 2004-01-26 2017-03-15 OSRAM Opto Semiconductors GmbH Dünnfilm-led mit einer stromaufweitungsstruktur
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same
DE102004021175B4 (de) 2004-04-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchips für die Optoelektronik und Verfahren zu deren Herstellung
DE102004026231B4 (de) 2004-05-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Bereichs mit reduzierter elektrischer Leitfähigkeit innerhalb einer Halbleiterschicht und optoelektronisches Halbleiterbauelement
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102132427B (zh) * 2008-10-20 2013-07-17 Lg伊诺特有限公司 发光器件及其制造方法
TWI406433B (zh) * 2009-03-17 2013-08-21 Tekcore Co Ltd Vertical gallium nitride based light emitting diode and manufacturing method thereof
TWI723002B (zh) * 2014-11-06 2021-04-01 荷蘭商露明控股公司 具有位於一頂部接點下方之溝渠之發光裝置

Also Published As

Publication number Publication date
WO2007124708A1 (de) 2007-11-08
EP2011160A1 (de) 2009-01-07
DE102006034847A1 (de) 2007-10-31
KR101294911B1 (ko) 2013-08-08
EP2011160B1 (de) 2018-08-15
JP2009534857A (ja) 2009-09-24
JP5404386B2 (ja) 2014-01-29
CN101427392B (zh) 2011-04-06
KR20090009912A (ko) 2009-01-23
CN101427392A (zh) 2009-05-06
US20100019268A1 (en) 2010-01-28
US8378371B2 (en) 2013-02-19
TWI381545B (zh) 2013-01-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees