TW200802786A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TW200802786A TW200802786A TW096116590A TW96116590A TW200802786A TW 200802786 A TW200802786 A TW 200802786A TW 096116590 A TW096116590 A TW 096116590A TW 96116590 A TW96116590 A TW 96116590A TW 200802786 A TW200802786 A TW 200802786A
- Authority
- TW
- Taiwan
- Prior art keywords
- mosfet
- semiconductor device
- connected together
- electrodes
- elements
- Prior art date
Links
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dc-Dc Converters (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006175278A JP5165214B2 (ja) | 2006-06-26 | 2006-06-26 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200802786A true TW200802786A (en) | 2008-01-01 |
Family
ID=39008996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096116590A TW200802786A (en) | 2006-06-26 | 2007-05-10 | Semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080122063A1 (zh) |
JP (1) | JP5165214B2 (zh) |
KR (1) | KR100849015B1 (zh) |
CN (2) | CN101097908A (zh) |
TW (1) | TW200802786A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI573243B (zh) * | 2008-09-10 | 2017-03-01 | 瑞薩電子股份有限公司 | Semiconductor device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101506535B1 (ko) | 2007-02-28 | 2015-03-27 | 제이엔씨 주식회사 | 포지티브형 감광성 수지 조성물 |
CN103824784B (zh) * | 2010-05-05 | 2016-10-12 | 万国半导体有限公司 | 用连接片实现连接的半导体封装的方法 |
US9842797B2 (en) | 2011-03-07 | 2017-12-12 | Texas Instruments Incorporated | Stacked die power converter |
US10128219B2 (en) | 2012-04-25 | 2018-11-13 | Texas Instruments Incorporated | Multi-chip module including stacked power devices with metal clip |
US9129959B2 (en) | 2012-08-21 | 2015-09-08 | Infineon Technologies Ag | Method for manufacturing an electronic module and an electronic module |
JP6161251B2 (ja) * | 2012-10-17 | 2017-07-12 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US9837380B2 (en) | 2014-01-28 | 2017-12-05 | Infineon Technologies Austria Ag | Semiconductor device having multiple contact clips |
CN104332458B (zh) * | 2014-11-05 | 2018-06-15 | 中国电子科技集团公司第四十三研究所 | 功率芯片互连结构及其互连方法 |
JP6599736B2 (ja) * | 2015-11-20 | 2019-10-30 | 株式会社三社電機製作所 | 半導体モジュール |
KR102132056B1 (ko) * | 2016-03-30 | 2020-07-09 | 매그나칩 반도체 유한회사 | 전력 반도체 모듈 및 이의 제조 방법 |
JP6995674B2 (ja) * | 2018-03-23 | 2022-01-14 | 株式会社東芝 | 半導体装置 |
JP7180490B2 (ja) * | 2019-03-26 | 2022-11-30 | 株式会社デンソー | 半導体装置およびその製造方法 |
EP4231345A1 (en) * | 2022-02-22 | 2023-08-23 | Infineon Technologies Austria AG | Power semiconductor device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5245166Y2 (zh) * | 1973-11-14 | 1977-10-14 | ||
JPS58119665A (ja) * | 1982-01-11 | 1983-07-16 | Hitachi Ltd | 半導体装置及びその製法 |
FR2730365A1 (fr) * | 1995-02-08 | 1996-08-09 | Bull Sa | Circuit integre avec conductance reglable a partir d'un signal numerique de consigne |
US5814884C1 (en) * | 1996-10-24 | 2002-01-29 | Int Rectifier Corp | Commonly housed diverse semiconductor die |
SE518573C2 (sv) * | 1997-12-04 | 2002-10-22 | Ericsson Telefon Ab L M | Elektronisk krets resp. omkopplare för styrning av konduktans samt förfarande för tillverkning av dylik krets |
US6249041B1 (en) * | 1998-06-02 | 2001-06-19 | Siliconix Incorporated | IC chip package with directly connected leads |
US6040626A (en) * | 1998-09-25 | 2000-03-21 | International Rectifier Corp. | Semiconductor package |
KR20000057810A (ko) * | 1999-01-28 | 2000-09-25 | 가나이 쓰토무 | 반도체 장치 |
JP2001068498A (ja) * | 1999-08-27 | 2001-03-16 | Toshiba Corp | 半導体装置 |
JP4047572B2 (ja) * | 2001-10-31 | 2008-02-13 | 三菱電機株式会社 | 電力用半導体装置 |
JP3993461B2 (ja) * | 2002-05-15 | 2007-10-17 | 株式会社東芝 | 半導体モジュール |
US6731000B1 (en) * | 2002-11-12 | 2004-05-04 | Koninklijke Philips Electronics N.V. | Folded-flex bondwire-less multichip power package |
JP4115882B2 (ja) * | 2003-05-14 | 2008-07-09 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2005217072A (ja) * | 2004-01-28 | 2005-08-11 | Renesas Technology Corp | 半導体装置 |
JP2005302951A (ja) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | 電力用半導体装置パッケージ |
JP2007184525A (ja) * | 2005-12-07 | 2007-07-19 | Mitsubishi Electric Corp | 電子機器装置 |
-
2006
- 2006-06-26 JP JP2006175278A patent/JP5165214B2/ja not_active Expired - Fee Related
-
2007
- 2007-05-10 TW TW096116590A patent/TW200802786A/zh unknown
- 2007-06-18 KR KR1020070059459A patent/KR100849015B1/ko not_active IP Right Cessation
- 2007-06-25 US US11/819,162 patent/US20080122063A1/en not_active Abandoned
- 2007-06-26 CN CNA2007101262730A patent/CN101097908A/zh active Pending
- 2007-06-26 CN CN200910179290XA patent/CN101699623B/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI573243B (zh) * | 2008-09-10 | 2017-03-01 | 瑞薩電子股份有限公司 | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2008004873A (ja) | 2008-01-10 |
KR20070122372A (ko) | 2007-12-31 |
JP5165214B2 (ja) | 2013-03-21 |
CN101699623A (zh) | 2010-04-28 |
US20080122063A1 (en) | 2008-05-29 |
CN101097908A (zh) | 2008-01-02 |
CN101699623B (zh) | 2012-12-12 |
KR100849015B1 (ko) | 2008-07-30 |
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