WO2009031567A1 - 電気回路のスイッチング装置 - Google Patents

電気回路のスイッチング装置 Download PDF

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Publication number
WO2009031567A1
WO2009031567A1 PCT/JP2008/065838 JP2008065838W WO2009031567A1 WO 2009031567 A1 WO2009031567 A1 WO 2009031567A1 JP 2008065838 W JP2008065838 W JP 2008065838W WO 2009031567 A1 WO2009031567 A1 WO 2009031567A1
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Prior art keywords
igfet
main
sub
switching device
electric circuit
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PCT/JP2008/065838
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English (en)
French (fr)
Inventor
Ryoji Takahashi
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Sanken Electric Co., Ltd.
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Application filed by Sanken Electric Co., Ltd. filed Critical Sanken Electric Co., Ltd.
Priority to EP08829470A priority Critical patent/EP2187441A4/en
Priority to CN2008801057758A priority patent/CN101809742B/zh
Publication of WO2009031567A1 publication Critical patent/WO2009031567A1/ja
Priority to US12/717,615 priority patent/US7872315B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
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    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)

Abstract

スイッチング装置としての複合半導体装置（２０）は、第１及び第２の主端子（１１，１２）と、主制御端子（１３）と、主IGFET（１４）と、保護スイッチング素子としての副IGFET（１５）と、ゲート抵抗（１６）とを有する。主IGFET（１４）は第１及び第２の主端子（１１，１２）間に接続されている。副IGFET（１５）は主IGFET（１４）のドレイン電極（Ｄ１）とゲート電極（Ｇ１）との間に接続されている。副IGFET（１５）のゲート電極（Ｇ２）は主IGFET（１４）のソース電極（Ｓ１）に接続されている。副IGFET（１５）は主IGFET（１４）に逆方向電圧が印加された時にオンになる。これにより主スイッチング素子としての主IGFET（１４）の保護が達成される。
PCT/JP2008/065838 2007-09-07 2008-09-03 電気回路のスイッチング装置 WO2009031567A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08829470A EP2187441A4 (en) 2007-09-07 2008-09-03 SWITCHING DEVICE FOR ELECTRICAL CIRCUIT
CN2008801057758A CN101809742B (zh) 2007-09-07 2008-09-03 电气电路的开关装置
US12/717,615 US7872315B2 (en) 2007-09-07 2010-03-04 Electronic switching device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007232635A JP4930904B2 (ja) 2007-09-07 2007-09-07 電気回路のスイッチング装置
JP2007-232635 2007-09-07

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US12/717,615 Continuation US7872315B2 (en) 2007-09-07 2010-03-04 Electronic switching device

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WO2009031567A1 true WO2009031567A1 (ja) 2009-03-12

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US (1) US7872315B2 (ja)
EP (1) EP2187441A4 (ja)
JP (1) JP4930904B2 (ja)
CN (1) CN101809742B (ja)
WO (1) WO2009031567A1 (ja)

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US20110073905A1 (en) * 2009-09-30 2011-03-31 Mutsuhiro Mori Semiconductor device and power converter using it
WO2012169019A1 (ja) * 2011-06-08 2012-12-13 住友電気工業株式会社 半導体装置およびその製造方法
US8334563B2 (en) 2008-06-02 2012-12-18 Sanken Electric Co., Ltd. Field-effect semiconductor device and method of producing the same

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WO2016051973A1 (ja) 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
KR102206965B1 (ko) * 2017-11-01 2021-01-25 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 트렌치형 전력 트랜지스터
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JP2019175930A (ja) * 2018-03-27 2019-10-10 エイブリック株式会社 半導体装置及びその製造方法
JP7294036B2 (ja) * 2019-09-30 2023-06-20 三菱電機株式会社 半導体試験装置、半導体装置の試験方法および半導体装置の製造方法

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See also references of EP2187441A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8334563B2 (en) 2008-06-02 2012-12-18 Sanken Electric Co., Ltd. Field-effect semiconductor device and method of producing the same
US20110073905A1 (en) * 2009-09-30 2011-03-31 Mutsuhiro Mori Semiconductor device and power converter using it
US8853736B2 (en) * 2009-09-30 2014-10-07 Hitachi, Ltd. Semiconductor device and power converter using it
WO2012169019A1 (ja) * 2011-06-08 2012-12-13 住友電気工業株式会社 半導体装置およびその製造方法

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CN101809742B (zh) 2012-08-08
JP2009065026A (ja) 2009-03-26
JP4930904B2 (ja) 2012-05-16
EP2187441A4 (en) 2011-02-09
US20100155830A1 (en) 2010-06-24
CN101809742A (zh) 2010-08-18
US7872315B2 (en) 2011-01-18

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