TW200746441A - Manufacturing method of thin film transistor and thin film transistor, and display - Google Patents

Manufacturing method of thin film transistor and thin film transistor, and display

Info

Publication number
TW200746441A
TW200746441A TW096115603A TW96115603A TW200746441A TW 200746441 A TW200746441 A TW 200746441A TW 096115603 A TW096115603 A TW 096115603A TW 96115603 A TW96115603 A TW 96115603A TW 200746441 A TW200746441 A TW 200746441A
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
gate electrode
manufacturing
display
Prior art date
Application number
TW096115603A
Other languages
English (en)
Other versions
TWI374545B (en
Inventor
Noriyuki Kawashima
Kazumasa Nomoto
Akihiro Nomoto
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200746441A publication Critical patent/TW200746441A/zh
Application granted granted Critical
Publication of TWI374545B publication Critical patent/TWI374545B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
TW096115603A 2006-05-16 2007-05-02 Manufacturing method of thin film transistor and thin film transistor, and display TWI374545B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006135995A JP2007311377A (ja) 2006-05-16 2006-05-16 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置

Publications (2)

Publication Number Publication Date
TW200746441A true TW200746441A (en) 2007-12-16
TWI374545B TWI374545B (en) 2012-10-11

Family

ID=38844002

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096115603A TWI374545B (en) 2006-05-16 2007-05-02 Manufacturing method of thin film transistor and thin film transistor, and display

Country Status (5)

Country Link
US (2) US8283200B2 (zh)
JP (1) JP2007311377A (zh)
KR (1) KR101432733B1 (zh)
CN (1) CN101075659B (zh)
TW (1) TWI374545B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424558B (zh) * 2007-12-19 2014-01-21 Japan Display West Inc 顯示器
TWI467752B (zh) * 2011-06-30 2015-01-01 Hon Hai Prec Ind Co Ltd 壓力調控薄膜電晶體及其應用
TWI637504B (zh) * 2017-01-25 2018-10-01 友達光電股份有限公司 畫素結構

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311377A (ja) * 2006-05-16 2007-11-29 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置
JP4986660B2 (ja) * 2007-03-14 2012-07-25 日本ゼオン株式会社 絶縁膜の形成方法およびこれを用いた半導体装置
JP5410032B2 (ja) * 2008-04-18 2014-02-05 三洋電機株式会社 有機半導体装置
GB0807767D0 (en) * 2008-04-29 2008-06-04 Plastic Logic Ltd Off-set top pixel electrode configuration
JP4552160B2 (ja) * 2008-07-30 2010-09-29 ソニー株式会社 有機半導体薄膜の形成方法および薄膜半導体装置の製造方法
JP2010062276A (ja) * 2008-09-03 2010-03-18 Brother Ind Ltd 酸化物薄膜トランジスタ、及びその製造方法
JP2010165930A (ja) * 2009-01-16 2010-07-29 Idemitsu Kosan Co Ltd 有機薄膜トランジスタ、その製造方法及びそれを備える装置
RU2528987C2 (ru) 2009-03-06 2014-09-20 Тейдзин Дюпон Филмз Джэпэн Лимитед Выравнивающая пленка и способ ее изготовления
EP2517245B1 (en) 2009-12-25 2019-07-24 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US20130099215A1 (en) * 2010-05-12 2013-04-25 Teijin Limited Organic semiconductor film, production method thereof, and contact printing stamp
CN102698268B (zh) * 2012-05-21 2013-10-09 苏州大学 一种导电高分子纳米材料及其用途
WO2014020809A1 (ja) * 2012-08-03 2014-02-06 パナソニック株式会社 窒化物半導体装置および窒化物半導体装置の製造方法
KR101994332B1 (ko) * 2012-10-30 2019-07-01 삼성디스플레이 주식회사 유기 발광 트랜지스터 및 이를 포함하는 표시 장치
WO2018020844A1 (ja) * 2016-07-29 2018-02-01 ソニー株式会社 表示装置、表示装置の製造方法、及び、電子機器
CN107994129B (zh) * 2017-11-20 2019-11-22 武汉华星光电半导体显示技术有限公司 柔性oled显示面板的制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07238481A (ja) * 1994-02-21 1995-09-12 Kokoku Kousensaku Kk インナーワイヤ及びワイヤ撚線機
JPH07239481A (ja) * 1994-02-28 1995-09-12 Kyocera Corp アクティブマトリクス基板およびその製造方法
JP3599950B2 (ja) * 1997-04-16 2004-12-08 株式会社アルバック 金属ペーストの焼成方法
WO2001047043A1 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Solution processed devices
KR100462712B1 (ko) * 2000-08-10 2004-12-20 마쯔시다덴기산교 가부시키가이샤 유기전자장치와 그 제조방법과 그 동작방법 및 그것을 사용한 표시장치
US6554801B1 (en) * 2000-10-26 2003-04-29 Advanced Cardiovascular Systems, Inc. Directional needle injection drug delivery device and method of use
US6982194B2 (en) * 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6897477B2 (en) * 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
US20040248338A1 (en) * 2001-07-09 2004-12-09 Henning Sirringhaus Solution influenced alignment
GB0126720D0 (en) * 2001-11-07 2002-01-02 Koninkl Philips Electronics Nv Active matrix pixel device
AU2002343058A1 (en) * 2001-12-19 2003-06-30 Merck Patent Gmbh Organic field effect transistor with an organic dielectric
US7622375B2 (en) * 2002-04-01 2009-11-24 Canon Kabushiki Kaisha Conductive member and process of producing the same
JP4103830B2 (ja) * 2003-05-16 2008-06-18 セイコーエプソン株式会社 パターンの形成方法及びパターン形成装置、デバイスの製造方法、アクティブマトリクス基板の製造方法
JP2005032769A (ja) * 2003-07-07 2005-02-03 Seiko Epson Corp 多層配線の形成方法、配線基板の製造方法、デバイスの製造方法
GB0318817D0 (en) * 2003-08-11 2003-09-10 Univ Cambridge Tech Method of making a polymer device
JP4997688B2 (ja) * 2003-08-19 2012-08-08 セイコーエプソン株式会社 電極、薄膜トランジスタ、電子回路、表示装置および電子機器
JP2005072188A (ja) * 2003-08-22 2005-03-17 Univ Of Tokyo 有機トランジスタの製造方法、及び有機トランジスタ
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP4474968B2 (ja) * 2004-03-26 2010-06-09 セイコーエプソン株式会社 半導体装置、電気光学装置、電子機器
JP2007311377A (ja) * 2006-05-16 2007-11-29 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置
US7718999B2 (en) * 2006-12-14 2010-05-18 Xerox Corporation Polythiophene electronic devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424558B (zh) * 2007-12-19 2014-01-21 Japan Display West Inc 顯示器
TWI467752B (zh) * 2011-06-30 2015-01-01 Hon Hai Prec Ind Co Ltd 壓力調控薄膜電晶體及其應用
TWI637504B (zh) * 2017-01-25 2018-10-01 友達光電股份有限公司 畫素結構

Also Published As

Publication number Publication date
US8283200B2 (en) 2012-10-09
KR101432733B1 (ko) 2014-08-20
CN101075659A (zh) 2007-11-21
US20120326154A1 (en) 2012-12-27
TWI374545B (en) 2012-10-11
KR20070111378A (ko) 2007-11-21
JP2007311377A (ja) 2007-11-29
CN101075659B (zh) 2010-12-22
US20080164463A1 (en) 2008-07-10

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees