TW200742078A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW200742078A
TW200742078A TW096108314A TW96108314A TW200742078A TW 200742078 A TW200742078 A TW 200742078A TW 096108314 A TW096108314 A TW 096108314A TW 96108314 A TW96108314 A TW 96108314A TW 200742078 A TW200742078 A TW 200742078A
Authority
TW
Taiwan
Prior art keywords
insulating film
gate electrode
semiconductor device
gate
contact
Prior art date
Application number
TW096108314A
Other languages
English (en)
Chinese (zh)
Inventor
Koji Akiyama
Shintaro Aoyama
Tsuyoshi Takahashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200742078A publication Critical patent/TW200742078A/zh

Links

Classifications

    • H10P14/69392—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H10P14/6328—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW096108314A 2006-03-10 2007-03-09 Semiconductor device TW200742078A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006066300A JP2007243049A (ja) 2006-03-10 2006-03-10 半導体装置

Publications (1)

Publication Number Publication Date
TW200742078A true TW200742078A (en) 2007-11-01

Family

ID=38509251

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108314A TW200742078A (en) 2006-03-10 2007-03-09 Semiconductor device

Country Status (3)

Country Link
JP (1) JP2007243049A (enExample)
TW (1) TW200742078A (enExample)
WO (1) WO2007105413A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007027765A1 (de) 2007-06-16 2008-12-18 Tuchenhagen Gmbh Doppelsitzventil
WO2013113341A1 (de) 2012-02-03 2013-08-08 Gea Tuchenhagen Gmbh Verfahren zur sitzreinigung eines doppelsitzventils und doppelsitzventil zur durchführung des verfahrens
DE102012003892A1 (de) 2012-02-28 2013-08-29 Gea Tuchenhagen Gmbh Verfahren zur Reinigung eines Ventils
DK2861898T3 (en) 2012-06-16 2017-06-06 Gea Tuchenhagen Gmbh DOUBLE SEAT VALVE WITH SEAT CLEANING FUNCTION
CN109478567B (zh) * 2016-07-15 2022-12-16 罗姆股份有限公司 半导体装置
CN114373802A (zh) * 2021-12-09 2022-04-19 广州华星光电半导体显示技术有限公司 Tft基板、液晶显示面板及显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3688631B2 (ja) * 2001-11-22 2005-08-31 株式会社東芝 半導体装置の製造方法
JP3776889B2 (ja) * 2003-02-07 2006-05-17 株式会社東芝 半導体装置およびその製造方法
JPWO2005038929A1 (ja) * 2003-10-15 2007-02-08 日本電気株式会社 半導体装置の製造方法
JP4526995B2 (ja) * 2004-04-09 2010-08-18 東京エレクトロン株式会社 ゲート絶縁膜の形成方法ならびにコンピュータ読取可能な記憶媒体およびコンピュータプログラム
JP2005317583A (ja) * 2004-04-27 2005-11-10 Renesas Technology Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2007105413A1 (ja) 2007-09-20
JP2007243049A (ja) 2007-09-20

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