JP2007243049A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007243049A
JP2007243049A JP2006066300A JP2006066300A JP2007243049A JP 2007243049 A JP2007243049 A JP 2007243049A JP 2006066300 A JP2006066300 A JP 2006066300A JP 2006066300 A JP2006066300 A JP 2006066300A JP 2007243049 A JP2007243049 A JP 2007243049A
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JP
Japan
Prior art keywords
insulating film
film
semiconductor device
gate insulating
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006066300A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007243049A5 (enExample
Inventor
Koji Akiyama
浩二 秋山
Shintaro Aoyama
真太郎 青山
Takeshi Takahashi
高橋　　毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006066300A priority Critical patent/JP2007243049A/ja
Priority to PCT/JP2007/052930 priority patent/WO2007105413A1/ja
Priority to TW096108314A priority patent/TW200742078A/zh
Publication of JP2007243049A publication Critical patent/JP2007243049A/ja
Publication of JP2007243049A5 publication Critical patent/JP2007243049A5/ja
Pending legal-status Critical Current

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Classifications

    • H10P14/69392—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H10P14/6328—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2006066300A 2006-03-10 2006-03-10 半導体装置 Pending JP2007243049A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006066300A JP2007243049A (ja) 2006-03-10 2006-03-10 半導体装置
PCT/JP2007/052930 WO2007105413A1 (ja) 2006-03-10 2007-02-19 半導体装置
TW096108314A TW200742078A (en) 2006-03-10 2007-03-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006066300A JP2007243049A (ja) 2006-03-10 2006-03-10 半導体装置

Publications (2)

Publication Number Publication Date
JP2007243049A true JP2007243049A (ja) 2007-09-20
JP2007243049A5 JP2007243049A5 (enExample) 2009-03-12

Family

ID=38509251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006066300A Pending JP2007243049A (ja) 2006-03-10 2006-03-10 半導体装置

Country Status (3)

Country Link
JP (1) JP2007243049A (enExample)
TW (1) TW200742078A (enExample)
WO (1) WO2007105413A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10833166B2 (en) 2016-07-15 2020-11-10 Rohm Co., Ltd. Semiconductor device including an MIS structure

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007027765A1 (de) 2007-06-16 2008-12-18 Tuchenhagen Gmbh Doppelsitzventil
WO2013113341A1 (de) 2012-02-03 2013-08-08 Gea Tuchenhagen Gmbh Verfahren zur sitzreinigung eines doppelsitzventils und doppelsitzventil zur durchführung des verfahrens
DE102012003892A1 (de) 2012-02-28 2013-08-29 Gea Tuchenhagen Gmbh Verfahren zur Reinigung eines Ventils
DK2861898T3 (en) 2012-06-16 2017-06-06 Gea Tuchenhagen Gmbh DOUBLE SEAT VALVE WITH SEAT CLEANING FUNCTION
CN114373802A (zh) * 2021-12-09 2022-04-19 广州华星光电半导体显示技术有限公司 Tft基板、液晶显示面板及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158262A (ja) * 2001-11-22 2003-05-30 Toshiba Corp 半導体装置及びその製造方法
JP2004241725A (ja) * 2003-02-07 2004-08-26 Toshiba Corp 半導体装置およびその製造方法
WO2005038929A1 (ja) * 2003-10-15 2005-04-28 Nec Corporation 半導体装置の製造方法
JP2005317583A (ja) * 2004-04-27 2005-11-10 Renesas Technology Corp 半導体装置およびその製造方法
JP2005322900A (ja) * 2004-04-09 2005-11-17 Tokyo Electron Ltd ゲート絶縁膜の形成方法ならびにコンピュータ読取可能な記憶媒体およびコンピュータプログラム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158262A (ja) * 2001-11-22 2003-05-30 Toshiba Corp 半導体装置及びその製造方法
JP2004241725A (ja) * 2003-02-07 2004-08-26 Toshiba Corp 半導体装置およびその製造方法
WO2005038929A1 (ja) * 2003-10-15 2005-04-28 Nec Corporation 半導体装置の製造方法
JP2005322900A (ja) * 2004-04-09 2005-11-17 Tokyo Electron Ltd ゲート絶縁膜の形成方法ならびにコンピュータ読取可能な記憶媒体およびコンピュータプログラム
JP2005317583A (ja) * 2004-04-27 2005-11-10 Renesas Technology Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10833166B2 (en) 2016-07-15 2020-11-10 Rohm Co., Ltd. Semiconductor device including an MIS structure

Also Published As

Publication number Publication date
WO2007105413A1 (ja) 2007-09-20
TW200742078A (en) 2007-11-01

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