TW200737324A - Manufacturing method of a semiconductor device - Google Patents

Manufacturing method of a semiconductor device

Info

Publication number
TW200737324A
TW200737324A TW095146369A TW95146369A TW200737324A TW 200737324 A TW200737324 A TW 200737324A TW 095146369 A TW095146369 A TW 095146369A TW 95146369 A TW95146369 A TW 95146369A TW 200737324 A TW200737324 A TW 200737324A
Authority
TW
Taiwan
Prior art keywords
semiconductor
semiconductor wafer
semiconductor device
paste
hardened
Prior art date
Application number
TW095146369A
Other languages
English (en)
Inventor
Yoshiyuki Abe
Hideo Mutou
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200737324A publication Critical patent/TW200737324A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
TW095146369A 2006-03-30 2006-12-12 Manufacturing method of a semiconductor device TW200737324A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006093300A JP2007266557A (ja) 2006-03-30 2006-03-30 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200737324A true TW200737324A (en) 2007-10-01

Family

ID=38639207

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146369A TW200737324A (en) 2006-03-30 2006-12-12 Manufacturing method of a semiconductor device

Country Status (5)

Country Link
US (1) US20070275543A1 (zh)
JP (1) JP2007266557A (zh)
KR (1) KR20070098623A (zh)
CN (1) CN101047146A (zh)
TW (1) TW200737324A (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4511903B2 (ja) * 2004-10-20 2010-07-28 株式会社ディスコ ウエーハの分割装置
JP2008235650A (ja) * 2007-03-22 2008-10-02 Disco Abrasive Syst Ltd デバイスの製造方法
JP2009200140A (ja) * 2008-02-20 2009-09-03 Disco Abrasive Syst Ltd 半導体チップの製造方法
US20090311849A1 (en) * 2008-06-17 2009-12-17 International Business Machines Corporation Methods of separating integrated circuit chips fabricated on a wafer
JP2011091240A (ja) * 2009-10-23 2011-05-06 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
EP2378548A1 (en) * 2010-04-19 2011-10-19 Nanda Technologies GmbH Methods of processing and inspecting semiconductor substrates
JP5508133B2 (ja) * 2010-05-19 2014-05-28 株式会社ディスコ 板状物の分割装置
JP5559623B2 (ja) * 2010-07-15 2014-07-23 株式会社ディスコ 分割方法
JP5654810B2 (ja) * 2010-09-10 2015-01-14 株式会社ディスコ ウェーハの加工方法
JP2012076439A (ja) * 2010-10-06 2012-04-19 Canon Inc シリコン基板の加工方法、および液体吐出ヘッドの製造方法
JP5496167B2 (ja) * 2010-11-12 2014-05-21 株式会社東京精密 半導体ウェハの分割方法及び分割装置
CN102646584B (zh) * 2011-02-16 2014-06-25 株式会社东京精密 工件分割装置及工件分割方法
KR101835483B1 (ko) 2011-12-09 2018-03-08 삼성전자주식회사 멀티-칩 패키지 및 그의 제조 방법
TWI488231B (zh) * 2012-01-18 2015-06-11 Xintec Inc 半導體封裝件及其製法與製作其系統
JP5992256B2 (ja) * 2012-08-24 2016-09-14 株式会社ディスコ ウェーハの分割方法
JP6026222B2 (ja) * 2012-10-23 2016-11-16 株式会社ディスコ ウエーハの加工方法
JP2014209523A (ja) * 2013-04-16 2014-11-06 株式会社ディスコ ウェーハの加工方法
JP6211884B2 (ja) * 2013-10-10 2017-10-11 株式会社ディスコ ウェーハの加工方法
US9349645B2 (en) * 2013-10-16 2016-05-24 Nxp B.V. Apparatus, device and method for wafer dicing
WO2015125343A1 (ja) * 2014-02-18 2015-08-27 オリンパス株式会社 細胞分取方法
US9472458B2 (en) * 2014-06-04 2016-10-18 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
JP6371735B2 (ja) * 2015-04-20 2018-08-08 東芝メモリ株式会社 半導体装置の製造方法
CN105336686B (zh) * 2015-09-30 2019-10-25 中国电子科技集团公司第五十五研究所 一种复合结构SiC衬底器件的切割方法
JP6560147B2 (ja) * 2016-03-07 2019-08-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2019057575A (ja) * 2017-09-20 2019-04-11 東芝メモリ株式会社 半導体装置の製造方法および半導体装置
KR102388103B1 (ko) * 2017-10-27 2022-04-20 삼성디스플레이 주식회사 윈도우 패널 재생설비 및 윈도우 패널 재생방법
US10490428B2 (en) * 2017-12-22 2019-11-26 Lumidleds LLC Method and system for dual stretching of wafers for isolated segmented chip scale packages
US10283424B1 (en) * 2018-03-08 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer structure and packaging method
JP7027215B2 (ja) * 2018-03-27 2022-03-01 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置

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JPS63205383A (ja) * 1987-02-20 1988-08-24 F S K Kk ウエハ貼着用粘着シ−ト
JP3438369B2 (ja) * 1995-01-17 2003-08-18 ソニー株式会社 部材の製造方法
US6102267A (en) * 1998-12-10 2000-08-15 Lucent Technologies, Inc. Method and apparatus for non-contact pulsating jet cleaving of a semiconductor material
JP3368876B2 (ja) * 1999-11-05 2003-01-20 株式会社東京精密 半導体チップ製造方法
US6716723B2 (en) * 2002-06-05 2004-04-06 Intel Corporation Wafer cutting using laser marking
JP4471563B2 (ja) * 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
TWI520269B (zh) * 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US7410831B2 (en) * 2003-05-12 2008-08-12 Tokyo Seimitsu Co., Ltd. Method and device for dividing plate-like member
JP4770126B2 (ja) * 2003-06-06 2011-09-14 日立化成工業株式会社 接着シート
US7005317B2 (en) * 2003-10-27 2006-02-28 Intel Corporation Controlled fracture substrate singulation
JP2005150537A (ja) * 2003-11-18 2005-06-09 Disco Abrasive Syst Ltd 板状物の加工方法および加工装置
JP4054773B2 (ja) * 2004-02-27 2008-03-05 キヤノン株式会社 シリコン基板割断方法
US7075107B2 (en) * 2004-05-06 2006-07-11 Advanced Analog Technology, Inc Semiconductor wafer and manufacturing process thereof
JP2005340431A (ja) * 2004-05-26 2005-12-08 Renesas Technology Corp 半導体装置の製造方法
JP2006059941A (ja) * 2004-08-19 2006-03-02 Disco Abrasive Syst Ltd 半導体チップの製造方法

Also Published As

Publication number Publication date
CN101047146A (zh) 2007-10-03
JP2007266557A (ja) 2007-10-11
KR20070098623A (ko) 2007-10-05
US20070275543A1 (en) 2007-11-29

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