TW200732864A - Composition for removing residue of a wiring substrate, and washing method thereof - Google Patents

Composition for removing residue of a wiring substrate, and washing method thereof

Info

Publication number
TW200732864A
TW200732864A TW095147558A TW95147558A TW200732864A TW 200732864 A TW200732864 A TW 200732864A TW 095147558 A TW095147558 A TW 095147558A TW 95147558 A TW95147558 A TW 95147558A TW 200732864 A TW200732864 A TW 200732864A
Authority
TW
Taiwan
Prior art keywords
wiring substrate
composition
residue
washing method
removing residue
Prior art date
Application number
TW095147558A
Other languages
English (en)
Other versions
TWI411893B (zh
Inventor
Eiko Kuwabara
Hideo Kashiwagi
Hiroshi Matsunaga
Masaru Ohto
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of TW200732864A publication Critical patent/TW200732864A/zh
Application granted granted Critical
Publication of TWI411893B publication Critical patent/TWI411893B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C11D2111/22—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax, thiol
    • H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW095147558A 2005-12-20 2006-12-19 配線基板之殘渣去除用組成物及洗淨方法 TWI411893B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005365729 2005-12-20

Publications (2)

Publication Number Publication Date
TW200732864A true TW200732864A (en) 2007-09-01
TWI411893B TWI411893B (zh) 2013-10-11

Family

ID=38188508

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095147558A TWI411893B (zh) 2005-12-20 2006-12-19 配線基板之殘渣去除用組成物及洗淨方法

Country Status (8)

Country Link
US (1) US20100051066A1 (zh)
EP (1) EP1965618B1 (zh)
JP (1) JP5292811B2 (zh)
KR (1) KR101349491B1 (zh)
CN (1) CN101331811B (zh)
IL (1) IL192278A (zh)
TW (1) TWI411893B (zh)
WO (1) WO2007072727A1 (zh)

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* Cited by examiner, † Cited by third party
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US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
EP2288965A4 (en) * 2008-05-01 2011-08-10 Advanced Tech Materials LOW PH MIXTURES FOR REMOVAL OF HIGH DENSITY IMPLANTED RESERVE
JP2010121151A (ja) * 2008-11-17 2010-06-03 Fuji Electric Systems Co Ltd 表面処理方法
JP5348007B2 (ja) * 2010-02-17 2013-11-20 住友電気工業株式会社 フレキシブルプリント配線板の製造方法
JP5676908B2 (ja) * 2010-04-21 2015-02-25 上村工業株式会社 プリント配線基板の表面処理方法及び表面処理剤
CN102673116B (zh) * 2012-05-24 2014-09-03 中国科学院苏州纳米技术与纳米仿生研究所 消除印刷器件卫星点的方法
JP5854230B2 (ja) * 2012-12-13 2016-02-09 栗田工業株式会社 基板洗浄液および基板洗浄方法
HUE044481T2 (hu) * 2013-08-29 2019-10-28 Hitachi Metals Ltd Eljárás kerámia áramkör-lap elõállítására
US9803162B2 (en) 2014-04-10 2017-10-31 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, and method for cleaning semiconductor device
KR102326028B1 (ko) 2015-01-26 2021-11-16 삼성디스플레이 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
CN105045051B (zh) * 2015-08-24 2016-06-01 北京中科紫鑫科技有限责任公司 光刻胶的去除方法
KR102412268B1 (ko) * 2016-01-26 2022-06-23 동우 화인켐 주식회사 표시장치용 어레이 기판의 제조방법
KR20180060489A (ko) 2016-11-29 2018-06-07 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
KR102295991B1 (ko) * 2017-08-31 2021-09-01 후지필름 가부시키가이샤 처리액, 키트, 기판의 세정 방법
KR20200058428A (ko) 2017-10-10 2020-05-27 미쯔비시 케미컬 주식회사 세정액, 세정 방법 및 반도체 웨이퍼의 제조 방법
JP2019201072A (ja) * 2018-05-15 2019-11-21 株式会社デンソー 半導体装置の製造方法
CN111484908A (zh) * 2019-01-29 2020-08-04 山东浪潮华光光电子股份有限公司 一种光刻版清洗剂及其使用方法
JP7212974B1 (ja) * 2022-04-14 2023-01-26 メック株式会社 洗浄剤、洗浄方法、および補給液

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
TW426816B (en) 1996-04-17 2001-03-21 Ekc Technology Inc Hydroxylamine-gallic compound composition and process
JPH1167632A (ja) 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
US6451697B1 (en) * 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
TW554258B (en) * 2000-11-30 2003-09-21 Tosoh Corp Resist stripper
JP2002202617A (ja) 2000-12-27 2002-07-19 Tosoh Corp レジスト剥離用組成物
DE10302596A1 (de) * 2002-01-24 2003-08-28 Shipley Company Marlborough Behandlung von Metalloberflächen mit einer modifizierten Oxidaustauschmasse
PL207297B1 (pl) * 2002-06-07 2010-11-30 Mallinckrodt Baker Inc Bezkrzemianowa kompozycja czyszcząca i zastosowanie bezkrzemianowej kompozycji czyszczącej
SG129274A1 (en) * 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
JP4270544B2 (ja) 2003-03-06 2009-06-03 花王株式会社 剥離剤組成物
JP4159980B2 (ja) * 2003-12-24 2008-10-01 花王株式会社 レジスト用剥離剤組成物
US7919445B2 (en) * 2004-03-30 2011-04-05 Basf Aktiengesellschaft Aqueous solution for removing post-etch residue
JP4440689B2 (ja) * 2004-03-31 2010-03-24 東友ファインケム株式会社 レジスト剥離剤組成物
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
KR100606187B1 (ko) * 2004-07-14 2006-08-01 테크노세미켐 주식회사 반도체 기판 세정용 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
KR101444468B1 (ko) * 2005-10-05 2014-10-30 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제

Also Published As

Publication number Publication date
EP1965618A4 (en) 2010-08-04
US20100051066A1 (en) 2010-03-04
KR20080091096A (ko) 2008-10-09
EP1965618B1 (en) 2012-11-14
WO2007072727A1 (ja) 2007-06-28
CN101331811B (zh) 2010-09-08
JPWO2007072727A1 (ja) 2009-05-28
KR101349491B1 (ko) 2014-01-08
IL192278A0 (en) 2008-12-29
IL192278A (en) 2013-11-28
JP5292811B2 (ja) 2013-09-18
TWI411893B (zh) 2013-10-11
CN101331811A (zh) 2008-12-24
EP1965618A1 (en) 2008-09-03

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