TW200731629A - Nitride semiconductor light-emitting device and the method of manufacturing the same - Google Patents

Nitride semiconductor light-emitting device and the method of manufacturing the same

Info

Publication number
TW200731629A
TW200731629A TW095136585A TW95136585A TW200731629A TW 200731629 A TW200731629 A TW 200731629A TW 095136585 A TW095136585 A TW 095136585A TW 95136585 A TW95136585 A TW 95136585A TW 200731629 A TW200731629 A TW 200731629A
Authority
TW
Taiwan
Prior art keywords
face
nitride
layer
side end
nitride semiconductor
Prior art date
Application number
TW095136585A
Other languages
English (en)
Other versions
TWI336547B (zh
Inventor
Takayuki Matsuyama
Masaaki Onomura
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200731629A publication Critical patent/TW200731629A/zh
Application granted granted Critical
Publication of TWI336547B publication Critical patent/TWI336547B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H01S5/02224—Gas-filled housings the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
TW095136585A 2005-10-11 2006-10-02 Nitride semiconductor light-emitting device and the method of manufacturing the same TW200731629A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005296931A JP2007109737A (ja) 2005-10-11 2005-10-11 窒化物半導体レーザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200731629A true TW200731629A (en) 2007-08-16
TWI336547B TWI336547B (zh) 2011-01-21

Family

ID=38019022

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136585A TW200731629A (en) 2005-10-11 2006-10-02 Nitride semiconductor light-emitting device and the method of manufacturing the same

Country Status (4)

Country Link
US (1) US7602829B2 (zh)
JP (1) JP2007109737A (zh)
CN (1) CN100463311C (zh)
TW (1) TW200731629A (zh)

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US7852893B2 (en) * 2007-02-26 2010-12-14 Kabushiki Kaisha Toshiba Semiconductor laser device
US20080298411A1 (en) * 2007-05-28 2008-12-04 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device and method of manufacturing the same
JP4964027B2 (ja) * 2007-05-28 2012-06-27 三洋電機株式会社 窒化物系半導体レーザ素子の作製方法
JP4986714B2 (ja) * 2007-05-30 2012-07-25 三洋電機株式会社 窒化物系半導体レーザ素子およびその製造方法
US7646025B1 (en) * 2007-05-31 2010-01-12 Chien-Min Sung Diamond LED devices and associated methods
US8309967B2 (en) * 2007-05-31 2012-11-13 Chien-Min Sung Diamond LED devices and associated methods
JP5122337B2 (ja) * 2007-06-13 2013-01-16 シャープ株式会社 発光素子及び発光素子の製造方法
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
US7924898B2 (en) * 2007-09-28 2011-04-12 Sanyo Electric Co., Ltd. Nitride based semiconductor laser device with oxynitride protective coatings on facets
US7978744B2 (en) * 2007-09-28 2011-07-12 Sanyo Electric Co., Ltd. Nitride based semiconductor laser device with oxynitride protective films on facets
JP5183516B2 (ja) * 2008-02-15 2013-04-17 三洋電機株式会社 半導体レーザ素子
JP5193718B2 (ja) * 2008-07-18 2013-05-08 パナソニック株式会社 窒化物半導体レーザ装置
JP2010067890A (ja) * 2008-09-12 2010-03-25 Hitachi Cable Ltd 発光素子
JP5922400B2 (ja) * 2011-12-27 2016-05-24 古河電気工業株式会社 半導体装置の測定方法
JP7009988B2 (ja) * 2017-12-28 2022-01-26 三菱ケミカル株式会社 酸化ケイ素薄膜積層体のロール状巻回体およびその製造方法

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US4656638A (en) * 1983-02-14 1987-04-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
JPS61207091A (ja) * 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子
JPS62238679A (ja) * 1986-04-09 1987-10-19 Mitsubishi Electric Corp 光半導体素子
US5392305A (en) 1993-07-14 1995-02-21 Corning Incorporated Packaging of high power semiconductor lasers
JPH10509283A (ja) * 1995-09-14 1998-09-08 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体ダイオードレーザ及びその製造方法
JP2870486B2 (ja) * 1996-06-06 1999-03-17 日本電気株式会社 半導体レーザ素子
JP2001515656A (ja) * 1996-12-13 2001-09-18 ユニフェイズ オプト ホールディングス インコーポレイテッド 半導体レーザ及びその製造方法
JP2971435B2 (ja) * 1998-03-30 1999-11-08 東芝電子エンジニアリング株式会社 半導体レーザおよびその製造方法
JP3699851B2 (ja) * 1998-05-11 2005-09-28 三菱化学株式会社 半導体発光素子の製造方法
US6590920B1 (en) * 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
JP3814432B2 (ja) * 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
JP2000216476A (ja) * 1999-01-25 2000-08-04 Sanyo Electric Co Ltd 半導体発光素子
JP2000036633A (ja) * 1999-07-16 2000-02-02 Toshiba Electronic Engineering Corp 半導体レ―ザ
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Also Published As

Publication number Publication date
CN100463311C (zh) 2009-02-18
CN1949606A (zh) 2007-04-18
JP2007109737A (ja) 2007-04-26
US7602829B2 (en) 2009-10-13
TWI336547B (zh) 2011-01-21
US20080181275A1 (en) 2008-07-31

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MM4A Annulment or lapse of patent due to non-payment of fees