TW200728919A - Negative photoresist composition - Google Patents

Negative photoresist composition

Info

Publication number
TW200728919A
TW200728919A TW095148307A TW95148307A TW200728919A TW 200728919 A TW200728919 A TW 200728919A TW 095148307 A TW095148307 A TW 095148307A TW 95148307 A TW95148307 A TW 95148307A TW 200728919 A TW200728919 A TW 200728919A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
negative photoresist
weights
liquid crystal
crystal display
Prior art date
Application number
TW095148307A
Other languages
English (en)
Other versions
TWI330759B (en
Inventor
Bong-Seok Moon
Mi-Sun Ryu
Seok-Keun Kim
Seon-Ho Kim
Young-Hoe Kim
Won-Su Byeon
Dae-Ho Shin
Seung-Woo Woo
Gab-Sung Lee
Kwang-Yong Lee
Haeng-Kyu Cho
Original Assignee
Samyang Ems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samyang Ems Co Ltd filed Critical Samyang Ems Co Ltd
Publication of TW200728919A publication Critical patent/TW200728919A/zh
Application granted granted Critical
Publication of TWI330759B publication Critical patent/TWI330759B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G03F7/0295—Photolytic halogen compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Filters (AREA)
  • Liquid Crystal (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Polymerisation Methods In General (AREA)
TW095148307A 2005-12-22 2006-12-22 Negative photoresist composition TWI330759B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050128008A KR100731327B1 (ko) 2005-12-22 2005-12-22 음성 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
TW200728919A true TW200728919A (en) 2007-08-01
TWI330759B TWI330759B (en) 2010-09-21

Family

ID=38298517

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095148307A TWI330759B (en) 2005-12-22 2006-12-22 Negative photoresist composition

Country Status (3)

Country Link
JP (2) JP4469365B2 (zh)
KR (1) KR100731327B1 (zh)
TW (1) TWI330759B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104817656A (zh) * 2015-04-01 2015-08-05 苏州瑞红电子化学品有限公司 一种聚氨酯丙烯酸酯共聚物及其光刻胶组合物
CN105503755A (zh) * 2016-01-10 2016-04-20 江苏博砚电子科技有限公司 一种彩色光阻用赛克基丙烯酸酯树脂及其制备方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100731327B1 (ko) * 2005-12-22 2007-06-25 주식회사 삼양이엠에스 음성 포토레지스트 조성물
KR100922810B1 (ko) * 2007-12-11 2009-10-21 주식회사 잉크테크 흑화 전도성 패턴의 제조방법
KR101099691B1 (ko) 2008-04-07 2011-12-28 주식회사 삼양이엠에스 음성 레지스트 조성물
US8796349B2 (en) * 2010-11-30 2014-08-05 Nissan Chemical Industries, Ltd. Photosensitive resin composition for microlenses
WO2012133429A1 (ja) * 2011-03-29 2012-10-04 日産化学工業株式会社 ネガ型感光性樹脂組成物
KR101837970B1 (ko) 2015-06-25 2018-03-13 삼성에스디아이 주식회사 흑색 감광성 수지 조성물, 감광성 수지막, 및 이를 이용한 디스플레이 장치
TWI741009B (zh) * 2016-09-30 2021-10-01 日商東麗股份有限公司 負型感光性樹脂組成物、硬化膜及有機ｅｌ顯示器暨其製造方法
KR101907410B1 (ko) 2017-01-17 2018-10-12 주식회사 트리엘 신규한 비닐페닐옥시기를 포함하는 화합물 및 이를 포함하는 감광성 포토레지스트 조성물
KR102103318B1 (ko) 2018-06-07 2020-04-22 주식회사 트리엘 비닐페닐옥시기를 가지는 화합물을 포함하는 포토레지스트 조성물
KR20180084716A (ko) 2018-07-17 2018-07-25 주식회사 트리엘 신규한 비닐페닐옥시기를 포함하는 화합물 및 이를 포함하는 감광성 포토레지스트 조성물
CN115894083B (zh) * 2022-07-29 2024-04-09 广东环波新材料有限责任公司 一种负性感光型黑色电子器件的制备方法和应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2613789B2 (ja) * 1988-05-12 1997-05-28 富士写真フイルム株式会社 感光性平版印刷版
JP2639734B2 (ja) * 1989-08-03 1997-08-13 富士写真フイルム株式会社 感光性組成物
JP2694393B2 (ja) * 1990-09-07 1997-12-24 富士写真フイルム株式会社 画像形成材料及びそれを用いる画像形成方法
KR100220953B1 (ko) 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
JP4366545B2 (ja) * 1999-09-01 2009-11-18 Ｊｓｒ株式会社 硬化性組成物およびカラーフィルタ保護膜
KR100684365B1 (ko) * 2003-04-30 2007-02-20 주식회사 삼양이엠에스 음성 레지스트 조성물을 이용한 고개구율 박막 트랜지스터(tft) 액정표시소자의 유기절연막 형성방법
KR100731327B1 (ko) * 2005-12-22 2007-06-25 주식회사 삼양이엠에스 음성 포토레지스트 조성물

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104817656A (zh) * 2015-04-01 2015-08-05 苏州瑞红电子化学品有限公司 一种聚氨酯丙烯酸酯共聚物及其光刻胶组合物
CN105503755A (zh) * 2016-01-10 2016-04-20 江苏博砚电子科技有限公司 一种彩色光阻用赛克基丙烯酸酯树脂及其制备方法
CN105503755B (zh) * 2016-01-10 2018-10-30 江苏博砚电子科技有限公司 一种彩色光阻用赛克基丙烯酸酯树脂及其制备方法

Also Published As

Publication number Publication date
TWI330759B (en) 2010-09-21
JP2007171973A (ja) 2007-07-05
JP4469365B2 (ja) 2010-05-26
JP4672789B2 (ja) 2011-04-20
JP2010015156A (ja) 2010-01-21
KR100731327B1 (ko) 2007-06-25

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