TW200727081A - Positive resist composition and pattern forming method using the same - Google Patents

Positive resist composition and pattern forming method using the same

Info

Publication number
TW200727081A
TW200727081A TW095145556A TW95145556A TW200727081A TW 200727081 A TW200727081 A TW 200727081A TW 095145556 A TW095145556 A TW 095145556A TW 95145556 A TW95145556 A TW 95145556A TW 200727081 A TW200727081 A TW 200727081A
Authority
TW
Taiwan
Prior art keywords
group
fluorine atom
hydrogen atom
resin
acid
Prior art date
Application number
TW095145556A
Other languages
English (en)
Other versions
TWI403844B (zh
Inventor
Kei Yamamoto
Shinichi Kanna
Hiromi Kanda
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200727081A publication Critical patent/TW200727081A/zh
Application granted granted Critical
Publication of TWI403844B publication Critical patent/TWI403844B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095145556A 2005-12-09 2006-12-07 正型光阻組成物及使用它之圖案形成方法 TWI403844B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005356719 2005-12-09
JP2006075070 2006-03-17
JP2006257553A JP4881686B2 (ja) 2005-12-09 2006-09-22 ポジ型レジスト組成物及びそれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
TW200727081A true TW200727081A (en) 2007-07-16
TWI403844B TWI403844B (zh) 2013-08-01

Family

ID=37650638

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145556A TWI403844B (zh) 2005-12-09 2006-12-07 正型光阻組成物及使用它之圖案形成方法

Country Status (5)

Country Link
US (1) US7771912B2 (zh)
EP (1) EP1795962B1 (zh)
JP (1) JP4881686B2 (zh)
KR (1) KR101348223B1 (zh)
TW (1) TWI403844B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471690B (zh) * 2012-08-30 2015-02-01 Tokyo Ohka Kogyo Co Ltd Method for manufacturing photoresist composition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4613140B2 (ja) * 2006-03-17 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法
KR101400824B1 (ko) 2006-09-25 2014-05-29 후지필름 가부시키가이샤 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법
JP4857218B2 (ja) * 2006-09-26 2012-01-18 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
WO2008047729A1 (fr) * 2006-10-18 2008-04-24 Tokyo Ohka Kogyo Co., Ltd. Composition de réserve destinée à l'exposition par immersion et procédé de formation d'un motif de réserve
JP5186255B2 (ja) * 2007-03-20 2013-04-17 富士フイルム株式会社 レジスト表面疎水化用樹脂、その製造方法及び該樹脂を含有するポジ型レジスト組成物
JP4961374B2 (ja) * 2007-03-28 2012-06-27 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
US8877421B2 (en) * 2007-03-28 2014-11-04 Fujifilm Corporation Positive resist composition and pattern-forming method
EP1975716B1 (en) * 2007-03-28 2013-05-15 Fujifilm Corporation Positive resist composition and pattern forming method
JP5002323B2 (ja) * 2007-04-27 2012-08-15 東京応化工業株式会社 含フッ素高分子化合物、液浸露光用ポジ型レジスト組成物、及びレジストパターン形成方法
EP2017674A1 (en) * 2007-07-20 2009-01-21 Fujifilm Corporation Positive resist composition and pattern forming method
JP5459998B2 (ja) * 2007-09-14 2014-04-02 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂
JP5130019B2 (ja) * 2007-10-30 2013-01-30 東京応化工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
JP2009199058A (ja) 2007-11-05 2009-09-03 Rohm & Haas Electronic Materials Llc 液浸リソグラフィーのための組成物および方法
WO2009116182A1 (ja) * 2008-03-21 2009-09-24 日立化成工業株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP5358113B2 (ja) * 2008-03-28 2013-12-04 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
JP5586294B2 (ja) * 2009-03-31 2014-09-10 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
KR101857467B1 (ko) * 2009-12-14 2018-06-28 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 설포닐 광산 발생제 및 이를 포함하는 포토레지스트
US20110210577A1 (en) * 2010-03-01 2011-09-01 Rick Cochran Mobile shelter system
JP2013088763A (ja) * 2011-10-21 2013-05-13 Jsr Corp フォトレジスト組成物

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JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JP4262427B2 (ja) * 2000-09-12 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
WO2002077710A2 (en) * 2001-03-22 2002-10-03 Shipley Company, L.L.C. Photoresist compositions for short wavelength imaging
JP4124978B2 (ja) 2001-04-05 2008-07-23 富士フイルム株式会社 ポジ型レジスト組成物
JP3907167B2 (ja) * 2001-11-19 2007-04-18 富士フイルム株式会社 ポジ型レジスト組成物
JP4154593B2 (ja) * 2002-05-02 2008-09-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
US7029821B2 (en) * 2003-02-11 2006-04-18 Rohm And Haas Electronic Materials Llc Photoresist and organic antireflective coating compositions
JP2004294688A (ja) * 2003-03-26 2004-10-21 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びその製造方法
JP2004318045A (ja) * 2003-03-31 2004-11-11 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
DE602004008468T2 (de) 2003-06-26 2008-05-21 Jsr Corp. Photoresistzusammensetzungen
JP3993549B2 (ja) * 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
JP2005266764A (ja) * 2004-02-20 2005-09-29 Fuji Photo Film Co Ltd 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7906268B2 (en) * 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
US7681074B2 (en) * 2005-04-29 2010-03-16 Microsoft Corporation Transport high availability
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
JP4691442B2 (ja) * 2005-12-09 2011-06-01 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4881687B2 (ja) * 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
EP3537217B1 (en) * 2005-12-09 2022-08-31 FUJIFILM Corporation Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471690B (zh) * 2012-08-30 2015-02-01 Tokyo Ohka Kogyo Co Ltd Method for manufacturing photoresist composition

Also Published As

Publication number Publication date
TWI403844B (zh) 2013-08-01
US20070134589A1 (en) 2007-06-14
JP4881686B2 (ja) 2012-02-22
KR20070061462A (ko) 2007-06-13
KR101348223B1 (ko) 2014-01-06
EP1795962A3 (en) 2012-06-06
JP2007279663A (ja) 2007-10-25
EP1795962B1 (en) 2014-02-12
EP1795962A2 (en) 2007-06-13
US7771912B2 (en) 2010-08-10

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