TW200721335A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW200721335A
TW200721335A TW095128749A TW95128749A TW200721335A TW 200721335 A TW200721335 A TW 200721335A TW 095128749 A TW095128749 A TW 095128749A TW 95128749 A TW95128749 A TW 95128749A TW 200721335 A TW200721335 A TW 200721335A
Authority
TW
Taiwan
Prior art keywords
semiconductor chip
semiconductor device
resin protrusion
electrodes
semiconductor
Prior art date
Application number
TW095128749A
Other languages
English (en)
Inventor
Nobuaki Hashimoto
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200721335A publication Critical patent/TW200721335A/zh

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    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
TW095128749A 2005-08-08 2006-08-04 Semiconductor device TW200721335A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005229355A JP4235835B2 (ja) 2005-08-08 2005-08-08 半導体装置

Publications (1)

Publication Number Publication Date
TW200721335A true TW200721335A (en) 2007-06-01

Family

ID=37106375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128749A TW200721335A (en) 2005-08-08 2006-08-04 Semiconductor device

Country Status (5)

Country Link
US (2) US7705454B2 (zh)
EP (1) EP1753026A2 (zh)
JP (1) JP4235835B2 (zh)
CN (1) CN100452375C (zh)
TW (1) TW200721335A (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235835B2 (ja) 2005-08-08 2009-03-11 セイコーエプソン株式会社 半導体装置
KR100759309B1 (ko) 2005-08-08 2007-09-17 세이코 엡슨 가부시키가이샤 반도체 장치
JP4305667B2 (ja) 2005-11-07 2009-07-29 セイコーエプソン株式会社 半導体装置
JP4572376B2 (ja) * 2007-07-30 2010-11-04 セイコーエプソン株式会社 半導体装置の製造方法および電子デバイスの製造方法
JP4396746B2 (ja) * 2007-08-13 2010-01-13 セイコーエプソン株式会社 電子デバイス
JP4353289B2 (ja) 2007-08-20 2009-10-28 セイコーエプソン株式会社 電子デバイス及び電子機器
JP4548459B2 (ja) 2007-08-21 2010-09-22 セイコーエプソン株式会社 電子部品の実装構造体
JP4352279B2 (ja) * 2007-08-21 2009-10-28 セイコーエプソン株式会社 半導体装置及びその製造方法
JP4535295B2 (ja) * 2008-03-03 2010-09-01 セイコーエプソン株式会社 半導体モジュール及びその製造方法
JP4488254B2 (ja) * 2008-03-03 2010-06-23 セイコーエプソン株式会社 半導体モジュール
JP4888462B2 (ja) * 2008-09-24 2012-02-29 セイコーエプソン株式会社 電子部品の実装構造
JP5333367B2 (ja) * 2010-07-08 2013-11-06 セイコーエプソン株式会社 電気光学装置及び電子モジュール

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JPH02272737A (ja) * 1989-04-14 1990-11-07 Citizen Watch Co Ltd 半導体の突起電極構造及び突起電極形成方法
JP3336859B2 (ja) 1996-05-29 2002-10-21 松下電器産業株式会社 半導体装置およびその製造方法
TW324847B (en) * 1996-12-13 1998-01-11 Ind Tech Res Inst The structure of composite bump
TW448524B (en) 1997-01-17 2001-08-01 Seiko Epson Corp Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
JP4258660B2 (ja) 1997-01-17 2009-04-30 セイコーエプソン株式会社 半導体装置
JP3651597B2 (ja) * 1999-06-15 2005-05-25 株式会社フジクラ 半導体パッケージ、半導体装置、電子装置及び半導体パッケージの製造方法
JP2001110831A (ja) * 1999-10-07 2001-04-20 Seiko Epson Corp 外部接続突起およびその形成方法、半導体チップ、回路基板ならびに電子機器
JP4465891B2 (ja) 2001-02-07 2010-05-26 パナソニック株式会社 半導体装置
JP3969295B2 (ja) 2002-12-02 2007-09-05 セイコーエプソン株式会社 半導体装置及びその製造方法と回路基板及び電気光学装置、並びに電子機器
JP3693056B2 (ja) * 2003-04-21 2005-09-07 セイコーエプソン株式会社 半導体装置及びその製造方法、電子装置及びその製造方法並びに電子機器
JP4334397B2 (ja) 2003-04-24 2009-09-30 三洋電機株式会社 半導体装置及びその製造方法
TWI229890B (en) 2003-04-24 2005-03-21 Sanyo Electric Co Semiconductor device and method of manufacturing same
JP2005005306A (ja) * 2003-06-09 2005-01-06 Seiko Epson Corp 半導体装置、半導体モジュール、電子デバイス、電子機器および半導体モジュールの製造方法
JP3938128B2 (ja) 2003-09-30 2007-06-27 セイコーエプソン株式会社 半導体装置とその製造方法、回路基板、電気光学装置、及び電子機器
JP4218622B2 (ja) 2003-10-09 2009-02-04 セイコーエプソン株式会社 半導体装置の製造方法
JP3994989B2 (ja) * 2004-06-14 2007-10-24 セイコーエプソン株式会社 半導体装置、回路基板、電気光学装置および電子機器
JP4235835B2 (ja) 2005-08-08 2009-03-11 セイコーエプソン株式会社 半導体装置

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US20100155945A1 (en) 2010-06-24
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CN1913138A (zh) 2007-02-14
JP2007048812A (ja) 2007-02-22
US7851912B2 (en) 2010-12-14
US20070063345A1 (en) 2007-03-22
JP4235835B2 (ja) 2009-03-11
US7705454B2 (en) 2010-04-27

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