JP4488254B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP4488254B2
JP4488254B2 JP2008051968A JP2008051968A JP4488254B2 JP 4488254 B2 JP4488254 B2 JP 4488254B2 JP 2008051968 A JP2008051968 A JP 2008051968A JP 2008051968 A JP2008051968 A JP 2008051968A JP 4488254 B2 JP4488254 B2 JP 4488254B2
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Prior art keywords
elastic
wirings
semiconductor chip
protrusion
substrate
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Expired - Fee Related
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JP2008051968A
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JP2009212205A (ja
Inventor
明仁 成田
直也 佐藤
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2008051968A priority Critical patent/JP4488254B2/ja
Priority to TW098104339A priority patent/TWI406369B/zh
Priority to US12/392,288 priority patent/US7893543B2/en
Priority to KR1020090017556A priority patent/KR101067057B1/ko
Priority to CN2009101182472A priority patent/CN101527290B/zh
Publication of JP2009212205A publication Critical patent/JP2009212205A/ja
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Publication of JP4488254B2 publication Critical patent/JP4488254B2/ja
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Description

本発明は、半導体モジュールに関する。
半導体チップに長尺状の樹脂突起を形成し、その上に複数の配線を形成して、弾力性を有する端子を形成することが知られている（特許文献１）。しかし、特許文献１には、複数の配線間で、配線を構成する金属が移動して絶縁不良を起こすマイグレーションの対策について開示されていない。
特開２００７−４２８６７号公報
本発明は、マイグレーションの発生を防止することを目的とする。
（１）本発明に係る半導体モジュールは、
集積回路が形成された半導体チップと、
前記半導体チップに形成され、前記集積回路に電気的に接続された複数の電極と、
前記複数の電極上に位置する複数の開口を有して前記半導体チップ上に形成された絶縁膜と、
前記絶縁膜上に配置された、長尺状をなす弾性突起と、
前記複数の電極上から、前記弾性突起が延びる方向に沿った軸に交差して延び、前記弾性突起上に至る複数の配線と、
前記複数の配線の前記弾性突起上の部分にそれぞれ接触する複数のリードが形成された弾性基板と、
前記半導体チップの前記前記弾性突起が形成された面と、前記弾性基板の前記複数のリードが形成された面と、の間で間隔を保持する硬化した接着剤と、
を有し、
前記弾性突起の隣同士の前記配線の間の部分と、前記弾性基板とは、相互に弾性力を以て密着している。本発明によれば、隣同士の配線の間で弾性突起が弾性基板に密着するため、両者間の界面が１つだけになるので、水分の侵入経路が少ない。この点、両者間に接着剤が介在すると界面が２つになるので水分の侵入経路が多いので、イオンマイグレーションが発生しやすいが、本発明によれば、これを防止することができる。また、接着剤が介在しないので、接着剤に一般的に含まれるイオン化しやすい物質を配線間から排除することができ、これによってもイオンマイグレーションの発生を防止することができる。さらに、接着剤は硬化すると収縮するので、弾性突起と弾性基板間に硬化した接着剤が介在すると界面の剥離が生じやすいが、本発明では、接着剤が介在せず、しかも、弾性力によって弾性突起と弾性基板が密着するので両者の剥離が生じにくい。
（２）この半導体モジュールにおいて、
前記弾性基板は、弾性変形によって形成された複数の第１の窪みを有し、
前記複数のリードの前記複数の配線との接触部は、それぞれ、前記複数の第１の窪みの表面上に形成され、
前記弾性突起は、弾性変形によって形成された複数の第２の窪みを有し、
前記複数の配線の前記複数のリードとの接触部は、それぞれ、前記複数の第２の窪みの表面上に形成されていてもよい。
（半導体装置）
図１は、本発明の実施の形態に係る半導体モジュールに使用される半導体装置を示す平面図である。図２は、図１に示す半導体装置のII-II線断面図であり、図３は、図１に示す半導体装置のIII-III線断面図である。
半導体装置１は、半導体チップ１０を有する。半導体チップ１０は、矩形の面を有している。半導体チップ１０には、集積回路１２（トランジスタ等）が形成されている。半導体チップ１０には、集積回路１２に電気的に接続されるように、複数の電極１４が形成されている。電極１４は、１列又は複数列（平行な複数列）に並んでいる。電極１４は、半導体チップ１０の矩形の面の辺（例えば長方形の長辺）に沿って（平行に）並んでいる。電極１４は、内部配線（図示せず）を介して集積回路１２に電気的に接続されている。半導体チップ１０には、電極１４の少なくとも一部が露出する様に、電極１４上に位置する開口を有する絶縁膜１６（例えばパッシベーション膜）が形成されている。絶縁膜１６は、例えば、ＳｉＯ２やＳｉＮ等の無機材料のみで形成されていてもよい。絶縁膜１６は、集積回路１２の上方に形成されている。
半導体チップ１０（絶縁膜１６上）には、弾性突起１８が設けられている。半導体チップ１０の矩形の面の辺（例えば長方形の長辺）に沿って（平行に）延びる弾性突起１８が示されており、複数の弾性突起１８が平行に配列されている。弾性突起１８は、弾性変形する性質を有する。弾性突起１８の材料としては、例えばポリイミド樹脂、シリコーン変性ポリイミド樹脂、エポキシ樹脂、シリコーン変性エポキシ樹脂、ベンゾシクロブテン（ＢＣＢ；benzocyclobutene）、ポリベンゾオキサゾール（ＰＢＯ；polybenzoxazole）、アクリル樹脂、シリコーン樹脂、フェノール樹脂等を用いてもよい。
弾性突起１８は長尺状に形成されている。弾性突起１８は、延長方向に沿った軸ＡＸに直交する断面が、図２に示すように弓形（円の弧とその両端を結ぶ弦によってできる図形）をなしている。弾性突起１８は、その断面において、弓形の弦が絶縁膜１６上に配置されている。弾性突起１８の表面（半導体チップ１０とは反対側を向く面）は、凸曲面になっている。弾性突起１８の表面は、弾性突起１８の長手軸を回転軸として、回転軸の周囲に平行に位置する直線を回転させて描かれる回転面である。弾性突起１８の表面は、円柱を中心軸に平行な平面で切断して得られた形状の曲面（円柱の回転面の一部）の形状をなしている。弾性突起１８は、上面よりも下面が広くなるように、末広がりの形状になっている。
半導体チップ１０には、複数の配線２０が形成されている。配線２０の材料として、Ａｕ、Ｔｉ、ＴｉＷ、Ｗ、Ｃｒ、Ｎｉ、Ａｌ、Ｃｕ、Ｐｄ又は鉛フリーはんだ等を使用することができる。複数の配線２０は、電極１４上から弾性突起１８上に至るように形成されている。複数の配線２０は、隣同士の間隔をあけて弾性突起１８の上面に形成されている。１つの弾性突起１８上に複数の配線２０が形成されている。配線２０は、弾性突起１８の延長方向に沿った軸ＡＸに交差するように延びる。配線２０は、電極１４上から、絶縁膜１６上を通って、弾性突起１８上に至る。弾性突起１８上では、配線２０の表面は、弾性突起１８の表面に従った曲面になっている。配線２０と電極１４は直接接触していてもよいし、両者間に導電膜（図示せず）が介在していてもよい。配線２０は、弾性突起１８の、電極１４とは反対側の端部を越えて、絶縁膜１６上に至るように形成されている。
（半導体モジュールの製造方法）
図４（Ａ）〜図５（Ｂ）は、本発明の実施の形態に係る半導体モジュールの製造方法を説明する図である。本実施の形態では、上述した半導体装置１を、接着剤２２を介して、弾性基板２４に搭載する。弾性基板２４は、弾性変形する性質を有し、樹脂などからなるフレキシブル基板であってもよい。弾性基板２４には、リード２６が形成されている。リード２６の延長方向（図４（Ｂ）で紙面の表裏面方向）に直交する幅Ｗ１は、配線２０の延長方向（図４（Ｂ）で紙面の表裏面方向）に直交する幅Ｗ２よりも狭い。
リード２６を、配線２０の弾性突起１８上の部分に接触させて、弾性突起１８の延長方向に沿った軸ＡＸに交差して延びるように配置する。半導体装置１及び弾性基板２４の間に押圧力を加える。押圧力によって、弾性突起１８上の複数の配線２０を、リード２６に接触させる。
図５（Ａ）及び図５（Ｂ）に示すように、さらに押圧力を加えて、リード２６を弾性基板２４にめり込ませて第１の窪み２８を形成し、配線２０及びリード２６を弾性突起１８にくい込ませて第２の窪み３０を形成する。このとき、弾性基板２４及び弾性突起１８はいずれも弾性変形する。そして、弾性突起１８の隣同士の配線２０の間の部分と、弾性基板２４とを、相互に弾性力を以て密着させる。押圧力によって、半導体装置１及び弾性基板２４の間で接着剤２２を流動させる（例えば排出する）。熱によって、接着剤２２を硬化収縮させ、接着剤２２が硬化するまで押圧力を維持する。接着剤２２が硬化したら押圧力を解除する。こうして、半導体モジュールを製造する。
（半導体モジュール）
図６は、本発明の実施の形態に係る半導体モジュールを説明する図である。半導体モジュールは、上述した半導体装置１と、弾性基板２４と、を有する。弾性基板２４は、リード２６の弾性突起１８とは反対側を支持する。
弾性基板２４は、弾性変形によって形成された複数の第１の窪み２８を有する。第１の窪み２８の内面は、曲面であって、弾性突起１８の表面に対応した形状になっている。複数のリード２６の複数の配線２０との接触部は、それぞれ、複数の第１の窪み２８の表面上に形成されている。リード２６の、第１の窪み２８に対向する面は、曲面になっている。したがって、リード２６の、弾性基板２４との接触面は、平坦面（図４（Ｂ）参照）であったときと比べて、曲面（図６参照）になると面積が大きくなるので、リード２６の弾性基板２４への放熱性が高くなる。
弾性突起１８は、弾性変形によって形成された複数の第２の窪み３０を有する（図４（Ｂ）参照）。複数の配線２０の複数のリード２６との接触部は、それぞれ、複数の第２の窪み３０の表面上に形成されている。弾性突起１８の隣同士の配線２０の間の部分と、弾性基板２４とは、相互に弾性力を以て密着している。
接着剤２２は、半導体チップ１０の弾性突起１８が形成された面と、弾性基板２４の複数のリード２６が形成された面と、の間で間隔を保持する。接着剤２２は硬化収縮している。接着剤２２は、硬化時の収縮による残存ストレスを内在している。
本実施の形態によれば、隣同士の配線２０の間で弾性突起１８が弾性基板２４に密着するため、両者間の界面が１つだけになるので、水分の侵入経路が少ない。この点、両者間に接着剤２２が介在すると界面が２つになるので水分の侵入経路が多いので、イオンマイグレーションが発生しやすいが、本実施の形態によれば、これを防止することができる。また、接着剤２２が介在しないので、接着剤２２に一般的に含まれるイオン化しやすい物質（ナトリウム・カリウムなどのアルカリ金属（第１族元素のうち水素を除いたもの）又はフッ素・塩素・臭素などのハロゲン（第１７属元素））を配線２０間から排除することができ、これによってもイオンマイグレーションの発生を防止することができる。さらに、接着剤２２は硬化すると収縮するので、弾性突起１８と弾性基板２４間に硬化した接着剤２２が介在すると界面の剥離が生じやすいが、本実施の形態では、接着剤２２が介在せず、しかも、弾性力によって弾性突起１８と弾性基板２４が密着するので両者の剥離が生じにくい。
なお、半導体モジュールを有する電子機器として、ノート型パーソナルコンピュータ又は携帯電話などが挙げられる。
本発明は、上述した実施の形態に限定されるものではなく、種々の変形が可能である。例えば、本発明は、実施の形態で説明した構成と実質的に同一の構成（例えば、機能、方法及び結果が同一の構成、あるいは目的及び結果が同一の構成）を含む。また、本発明は、実施の形態で説明した構成の本質的でない部分を置き換えた構成を含む。また、本発明は、実施の形態で説明した構成と同一の作用効果を奏する構成又は同一の目的を達成することができる構成を含む。また、本発明は、実施の形態で説明した構成に公知技術を付加した構成を含む。
図１は、本発明の実施の形態に係る半導体モジュールに使用される半導体装置を示す平面図である。 図２は、図１に示す半導体装置のII-II線断面図である。 図３は、図１に示す半導体装置のIII-III線断面図である。 図４（Ａ）〜図４（Ｂ）は、本発明の実施の形態に係る半導体モジュールの製造方法を説明する図である。 図５（Ａ）〜図５（Ｂ）は、本発明の実施の形態に係る半導体モジュールの製造方法を説明する図である。 図６は、本発明の実施の形態に係る半導体モジュールを説明する図である。
符号の説明
１…半導体装置、 １０…半導体チップ、 １２…集積回路、 １４…電極、 １６…絶縁膜、 １８…弾性突起、 ２０…配線、 ２２…接着剤、 ２４…弾性基板、 ２６…リード ２８…第１の窪み、 ３０…第２の窪み

Claims (2)

  1. 集積回路が形成された半導体チップと、
    前記半導体チップに形成され、前記集積回路に電気的に接続された複数の電極と、
    前記複数の電極上に位置する複数の開口を有して前記半導体チップ上に形成された絶縁膜と、
    前記絶縁膜上に配置された、長尺状をなす弾性突起と、
    前記複数の電極上から、前記弾性突起が延びる方向に沿った軸に交差して延び、前記弾性突起上に至る複数の配線と、
    前記複数の配線の前記弾性突起上の部分にそれぞれ接触する複数のリードが形成された弾性基板と、
    前記半導体チップの前記前記弾性突起が形成された面と、前記弾性基板の前記複数のリードが形成された面と、の間で間隔を保持する硬化した接着剤と、
    を有し、
    前記弾性突起の隣同士の前記配線の間の部分と、前記弾性基板とは、相互に弾性力を以て密着している半導体モジュール。
  2. 請求項１に記載された半導体モジュールにおいて、
    前記弾性基板は、弾性変形によって形成された複数の第１の窪みを有し、
    前記複数のリードの前記複数の配線との接触部は、それぞれ、前記複数の第１の窪みの表面上に形成され、
    前記弾性突起は、弾性変形によって形成された複数の第２の窪みを有し、
    前記複数の配線の前記複数のリードとの接触部は、それぞれ、前記複数の第２の窪みの表面上に形成されている半導体モジュール。
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