TW200715564A - Method of manufacturing electro-optical device - Google Patents
Method of manufacturing electro-optical deviceInfo
- Publication number
- TW200715564A TW200715564A TW095127320A TW95127320A TW200715564A TW 200715564 A TW200715564 A TW 200715564A TW 095127320 A TW095127320 A TW 095127320A TW 95127320 A TW95127320 A TW 95127320A TW 200715564 A TW200715564 A TW 200715564A
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- data lines
- scanning lines
- driving elements
- pixel electrodes
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 3
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005227571A JP4497049B2 (ja) | 2005-08-05 | 2005-08-05 | 電気光学装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200715564A true TW200715564A (en) | 2007-04-16 |
TWI315583B TWI315583B (en) | 2009-10-01 |
Family
ID=37700259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095127320A TWI315583B (en) | 2005-08-05 | 2006-07-26 | Method of manufacturing electro-optical device |
Country Status (4)
Country | Link |
---|---|
US (1) | US7477334B2 (zh) |
JP (1) | JP4497049B2 (zh) |
CN (1) | CN100477170C (zh) |
TW (1) | TWI315583B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI386739B (zh) * | 2007-09-27 | 2013-02-21 | Sony Corp | 電子裝置,其製造方法及電子機器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8555150B1 (en) * | 2008-05-29 | 2013-10-08 | Adobe Systems Incorporated | Constraint driven authoring environment |
JP5987461B2 (ja) * | 2012-05-11 | 2016-09-07 | セイコーエプソン株式会社 | 電気光学装置の製造方法、及び、電気光学装置 |
CN104900633B (zh) | 2015-03-30 | 2018-04-03 | 京东方科技集团股份有限公司 | 一种阵列基板制造方法、阵列基板和显示装置 |
JP6508255B2 (ja) | 2017-05-17 | 2019-05-08 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05333377A (ja) * | 1992-06-04 | 1993-12-17 | Nec Corp | 液晶表示装置の製造方法 |
JPH06337436A (ja) * | 1993-05-27 | 1994-12-06 | Fujitsu Ltd | 薄膜トランジスタマトリクスの製造方法 |
KR100239779B1 (ko) * | 1996-12-04 | 2000-01-15 | 구본준 | 액정표시장치 |
JP3395598B2 (ja) * | 1997-09-25 | 2003-04-14 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法および液晶表示パネル |
JP3956572B2 (ja) * | 2000-03-13 | 2007-08-08 | セイコーエプソン株式会社 | 液晶装置用基板の製造方法 |
JP2001339065A (ja) * | 2000-05-26 | 2001-12-07 | Seiko Epson Corp | 電気光学装置の製造方法及び電気光学装置 |
JP2002299632A (ja) * | 2001-03-30 | 2002-10-11 | Sanyo Electric Co Ltd | 半導体装置及びアクティブマトリクス型表示装置 |
-
2005
- 2005-08-05 JP JP2005227571A patent/JP4497049B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-21 US US11/425,569 patent/US7477334B2/en active Active
- 2006-07-26 TW TW095127320A patent/TWI315583B/zh not_active IP Right Cessation
- 2006-08-04 CN CN200610110628.2A patent/CN100477170C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI386739B (zh) * | 2007-09-27 | 2013-02-21 | Sony Corp | 電子裝置,其製造方法及電子機器 |
Also Published As
Publication number | Publication date |
---|---|
US7477334B2 (en) | 2009-01-13 |
CN1909214A (zh) | 2007-02-07 |
US20070028390A1 (en) | 2007-02-08 |
JP2007041432A (ja) | 2007-02-15 |
TWI315583B (en) | 2009-10-01 |
CN100477170C (zh) | 2009-04-08 |
JP4497049B2 (ja) | 2010-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102655956B1 (ko) | 표시 장치, 타일형 표시 장치 및 이의 제조 방법 | |
CN107993983B (zh) | 柔性显示器 | |
KR20240049788A (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
CN105789225B (zh) | 阵列基板母板及其制作方法、显示装置及其制作方法 | |
CN107112349A (zh) | 具有经倒角的偏光层的柔性显示装置 | |
TW200742481A (en) | Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus | |
TWI267197B (en) | Thin film and method array substrate and method of producing the same | |
KR20140140150A (ko) | 플렉서블 표시장치 및 그의 제조방법 | |
EP2144292A3 (en) | Organic light emitting diode display apparatus and method of manufacturing the same | |
JP2009152565A5 (zh) | ||
TW200607380A (en) | Display device and production method for the same | |
TW200720803A (en) | Display apparatus and manufacturing method thereof | |
TW200732804A (en) | Display substrate, method of manufacturing the same and display panel having the same | |
CN104393188A (zh) | 一种有机发光二极管显示基板及其制作方法、显示装置 | |
TW200618291A (en) | Active matrix substrate, electro-optical device, electronic apparatus, and manufacturing method of active matrix substrate | |
TW200641492A (en) | Electro-optical device, method of manufacturing the same, and electronic apparatus | |
TW200729352A (en) | Electro-optical device, method of manufacturing electro-optical deivce, and electronic apparatus | |
CN204257650U (zh) | 显示基板、显示面板和掩膜板 | |
TW200612586A (en) | Organic light emitting diode display and manufacturing method thereof | |
TW200709426A (en) | Liquid crystal display device capable of reducing leakage current, and fabrication method thereof | |
TW200624971A (en) | Thin film transistor array panel and manufacturing method thereof | |
JP7079548B2 (ja) | アレイ基板、表示装置およびアレイ基板の製造方法 | |
TWI264816B (en) | Substrate for liquid crystal display device and liquid crystal display device having the same | |
TW200636980A (en) | Pixel structure, active matrix substrate, method of manufacturing active matrix substrate, electro-optical device, and electronic apparatus | |
TW200629566A (en) | Thin film transistor array panel and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |