TW200711046A - Transistors and methods of manufacture thereof - Google Patents
Transistors and methods of manufacture thereofInfo
- Publication number
- TW200711046A TW200711046A TW095130731A TW95130731A TW200711046A TW 200711046 A TW200711046 A TW 200711046A TW 095130731 A TW095130731 A TW 095130731A TW 95130731 A TW95130731 A TW 95130731A TW 200711046 A TW200711046 A TW 200711046A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate electrode
- thickness
- transistors
- manufacture
- methods
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 229910008482 TiSiN Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/219,368 US20070052036A1 (en) | 2005-09-02 | 2005-09-02 | Transistors and methods of manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200711046A true TW200711046A (en) | 2007-03-16 |
Family
ID=37478691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095130731A TW200711046A (en) | 2005-09-02 | 2006-08-21 | Transistors and methods of manufacture thereof |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070052036A1 (zh) |
EP (1) | EP1760777A3 (zh) |
JP (1) | JP2007110091A (zh) |
TW (1) | TW200711046A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101652854A (zh) * | 2008-01-25 | 2010-02-17 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US8159034B2 (en) | 2007-07-23 | 2012-04-17 | Kabushiki Kaisha Toshiba | Semiconductor device having insulated gate field effect transistors and method of manufacturing the same |
TWI470734B (zh) * | 2007-10-31 | 2015-01-21 | Freescale Semiconductor Inc | 不同電介質厚度之半導體裝置 |
Families Citing this family (17)
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JP2007088122A (ja) * | 2005-09-21 | 2007-04-05 | Renesas Technology Corp | 半導体装置 |
EP2153432B1 (fr) * | 2007-06-13 | 2012-09-12 | Thomson Licensing | Procede et dispositif d'affichage d'images comprenant deux étages de modulation |
US8138076B2 (en) * | 2008-05-12 | 2012-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | MOSFETs having stacked metal gate electrodes and method |
JP5291992B2 (ja) * | 2008-06-10 | 2013-09-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5288907B2 (ja) | 2008-06-27 | 2013-09-11 | 株式会社東芝 | 半導体装置とその製造方法 |
US7951678B2 (en) * | 2008-08-12 | 2011-05-31 | International Business Machines Corporation | Metal-gate high-k reference structure |
JP2010073985A (ja) * | 2008-09-19 | 2010-04-02 | Toshiba Corp | 半導体装置 |
US20100102393A1 (en) * | 2008-10-29 | 2010-04-29 | Chartered Semiconductor Manufacturing, Ltd. | Metal gate transistors |
JP4647682B2 (ja) * | 2008-11-12 | 2011-03-09 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US8252649B2 (en) | 2008-12-22 | 2012-08-28 | Infineon Technologies Ag | Methods of fabricating semiconductor devices and structures thereof |
JP2010177240A (ja) * | 2009-01-27 | 2010-08-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5135250B2 (ja) * | 2009-02-12 | 2013-02-06 | 株式会社東芝 | 半導体装置の製造方法 |
JP2011003717A (ja) * | 2009-06-18 | 2011-01-06 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5285519B2 (ja) | 2009-07-01 | 2013-09-11 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP6100589B2 (ja) * | 2012-04-13 | 2017-03-22 | ルネサスエレクトロニクス株式会社 | 自己整合型ソース・ドレインコンタクトを有する半導体装置およびその製造方法 |
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US11996298B2 (en) | 2022-05-03 | 2024-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reversed tone patterning method for dipole incorporation for multiple threshold voltages |
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KR100604908B1 (ko) * | 2004-10-11 | 2006-07-28 | 삼성전자주식회사 | 이종의 게이트 절연막을 구비하는 씬-바디 채널 씨모스소자 및 그 제조방법 |
US7344934B2 (en) * | 2004-12-06 | 2008-03-18 | Infineon Technologies Ag | CMOS transistor and method of manufacture thereof |
US7091568B2 (en) * | 2004-12-22 | 2006-08-15 | Freescale Semiconductor, Inc. | Electronic device including dielectric layer, and a process for forming the electronic device |
US7205186B2 (en) * | 2004-12-29 | 2007-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for suppressing oxide formation |
US7160781B2 (en) * | 2005-03-21 | 2007-01-09 | Infineon Technologies Ag | Transistor device and methods of manufacture thereof |
US7282426B2 (en) * | 2005-03-29 | 2007-10-16 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof |
US20060275975A1 (en) * | 2005-06-01 | 2006-12-07 | Matt Yeh | Nitridated gate dielectric layer |
US7183596B2 (en) * | 2005-06-22 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite gate structure in an integrated circuit |
US7361561B2 (en) * | 2005-06-24 | 2008-04-22 | Freescale Semiconductor, Inc. | Method of making a metal gate semiconductor device |
US7375394B2 (en) * | 2005-07-06 | 2008-05-20 | Applied Intellectual Properties Co., Ltd. | Fringing field induced localized charge trapping memory |
US7432201B2 (en) * | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
-
2005
- 2005-09-02 US US11/219,368 patent/US20070052036A1/en not_active Abandoned
-
2006
- 2006-08-21 TW TW095130731A patent/TW200711046A/zh unknown
- 2006-09-01 EP EP06120019A patent/EP1760777A3/en not_active Withdrawn
- 2006-09-04 JP JP2006238994A patent/JP2007110091A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8159034B2 (en) | 2007-07-23 | 2012-04-17 | Kabushiki Kaisha Toshiba | Semiconductor device having insulated gate field effect transistors and method of manufacturing the same |
TWI470734B (zh) * | 2007-10-31 | 2015-01-21 | Freescale Semiconductor Inc | 不同電介質厚度之半導體裝置 |
US9362280B2 (en) | 2007-10-31 | 2016-06-07 | Freescale Semiconductor, Inc. | Semiconductor devices with different dielectric thicknesses |
CN101652854A (zh) * | 2008-01-25 | 2010-02-17 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1760777A3 (en) | 2008-05-07 |
JP2007110091A (ja) | 2007-04-26 |
US20070052036A1 (en) | 2007-03-08 |
EP1760777A2 (en) | 2007-03-07 |
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