TW200705797A - Resistor circuit - Google Patents

Resistor circuit

Info

Publication number
TW200705797A
TW200705797A TW095119733A TW95119733A TW200705797A TW 200705797 A TW200705797 A TW 200705797A TW 095119733 A TW095119733 A TW 095119733A TW 95119733 A TW95119733 A TW 95119733A TW 200705797 A TW200705797 A TW 200705797A
Authority
TW
Taiwan
Prior art keywords
voltage
resistor
mos resistor
drain
variable
Prior art date
Application number
TW095119733A
Other languages
English (en)
Other versions
TWI316324B (zh
Inventor
Koichi Ito
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200705797A publication Critical patent/TW200705797A/zh
Application granted granted Critical
Publication of TWI316324B publication Critical patent/TWI316324B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45638—Indexing scheme relating to differential amplifiers the LC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45641—Indexing scheme relating to differential amplifiers the LC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45686—Indexing scheme relating to differential amplifiers the LC comprising one or more potentiometers, which are not shunting potentiometers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45691—Indexing scheme relating to differential amplifiers the LC comprising one or more transistors as active loading resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Voltage And Current In General (AREA)
TW095119733A 2005-06-07 2006-06-02 Resistor circuit TW200705797A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005166465A JP4696701B2 (ja) 2005-06-07 2005-06-07 抵抗回路

Publications (2)

Publication Number Publication Date
TW200705797A true TW200705797A (en) 2007-02-01
TWI316324B TWI316324B (zh) 2009-10-21

Family

ID=37498293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119733A TW200705797A (en) 2005-06-07 2006-06-02 Resistor circuit

Country Status (6)

Country Link
US (1) US7659765B2 (zh)
JP (1) JP4696701B2 (zh)
KR (1) KR101241264B1 (zh)
CN (1) CN101171748B (zh)
TW (1) TW200705797A (zh)
WO (1) WO2006132090A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8615205B2 (en) 2007-12-18 2013-12-24 Qualcomm Incorporated I-Q mismatch calibration and method
US8970272B2 (en) 2008-05-15 2015-03-03 Qualcomm Incorporated High-speed low-power latches
US8712357B2 (en) 2008-11-13 2014-04-29 Qualcomm Incorporated LO generation with deskewed input oscillator signal
US8718574B2 (en) 2008-11-25 2014-05-06 Qualcomm Incorporated Duty cycle adjustment for a local oscillator signal
US8693148B2 (en) 2009-01-08 2014-04-08 Micron Technology, Inc. Over-limit electrical condition protection circuits for integrated circuits
US8847638B2 (en) * 2009-07-02 2014-09-30 Qualcomm Incorporated High speed divide-by-two circuit
US8791740B2 (en) * 2009-07-16 2014-07-29 Qualcomm Incorporated Systems and methods for reducing average current consumption in a local oscillator path
JP5546361B2 (ja) * 2010-06-10 2014-07-09 セイコーインスツル株式会社 可変抵抗回路を備えた半導体集積回路
KR20120045561A (ko) * 2010-10-29 2012-05-09 에스케이하이닉스 주식회사 집적 회로
US8854098B2 (en) 2011-01-21 2014-10-07 Qualcomm Incorporated System for I-Q phase mismatch detection and correction
US8611058B2 (en) * 2011-08-23 2013-12-17 Micron Technology, Inc. Combination ESD protection circuits and methods
US8724268B2 (en) 2011-08-30 2014-05-13 Micron Technology, Inc. Over-limit electrical condition protection circuits and methods
US9154077B2 (en) 2012-04-12 2015-10-06 Qualcomm Incorporated Compact high frequency divider
US9628075B2 (en) 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US9148194B2 (en) 2012-07-07 2015-09-29 Skyworks Solutions, Inc. Radio-frequency switch system having improved intermodulation distortion performance
US9160328B2 (en) 2012-07-07 2015-10-13 Skyworks Solutions, Inc. Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
US20140009207A1 (en) * 2012-07-07 2014-01-09 Skyworks Solutions, Inc. Radio-frequency switch having dynamic gate bias resistance and body contact
US8975950B2 (en) 2012-07-07 2015-03-10 Skyworks Solutions, Inc. Switching device having a discharge circuit for improved intermodulation distortion performance
US9059702B2 (en) 2012-07-07 2015-06-16 Skyworks Solutions, Inc. Switch linearization by non-linear compensation of a field-effect transistor
US9276570B2 (en) 2012-07-07 2016-03-01 Skyworks Solutions, Inc. Radio-frequency switch having gate node voltage compensation network
US10147724B2 (en) 2012-07-07 2018-12-04 Skyworks Solutions, Inc. Feed-forward circuit to improve intermodulation distortion performance of radio-frequency switch
US8643168B1 (en) * 2012-10-16 2014-02-04 Lattice Semiconductor Corporation Integrated circuit package with input capacitance compensation
US9013225B2 (en) 2013-02-04 2015-04-21 Skyworks Solutions, Inc. RF switches having increased voltage swing uniformity
TWI505058B (zh) 2013-08-09 2015-10-21 Asustek Comp Inc 電壓控制電路
US20170243628A1 (en) 2016-02-22 2017-08-24 Mediatek Inc. Termination topology of memory system and associated memory module and control method
WO2017162269A1 (en) * 2016-03-22 2017-09-28 Telefonaktiebolaget Lm Ericsson (Publ) Low power high speed interface

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975604A (en) * 1987-05-29 1990-12-04 Triquint Semiconductor, Inc. Automatic return-loss optimization of a variable fet attenuator
US4875023A (en) * 1988-05-10 1989-10-17 Grumman Aerospace Corporation Variable attenuator having voltage variable FET resistor with chosen resistance-voltage relationship
CH675181A5 (zh) * 1988-05-19 1990-08-31 Siemens Ag Albis
FR2657736A1 (fr) 1990-01-31 1991-08-02 Sgs Thomson Microelectronics Circuit a resistance variable commandee en tension.
JPH0758563A (ja) * 1993-08-18 1995-03-03 Hitachi Ltd ステップ減衰器
WO1996003799A1 (fr) * 1994-07-27 1996-02-08 Citizen Watch Co., Ltd. Oscillateur a quartz du type a compensation de temperature
JP2827947B2 (ja) * 1995-02-14 1998-11-25 日本電気株式会社 減衰回路
JP3748460B2 (ja) * 1995-09-01 2006-02-22 キヤノン株式会社 集積回路
AUPN814496A0 (en) 1996-02-19 1996-03-14 Monash University Dermal penetration enhancer
JPH10200377A (ja) * 1997-01-13 1998-07-31 Asahi Kasei Micro Syst Kk 可変抵抗回路
JP3216808B2 (ja) * 1999-03-30 2001-10-09 日本電気株式会社 可変減衰器
JP3332082B2 (ja) * 2000-01-17 2002-10-07 日本電気株式会社 高周波可変減衰回路
US6717449B2 (en) 2001-10-23 2004-04-06 Olympus Corporation Variable resistance circuit and application circuits using the variable resistance circuit
JP4245892B2 (ja) 2001-10-23 2009-04-02 オリンパス株式会社 Ｍｏｓ型トランジスタのソースとドレイン間を制御可能な等価抵抗として用いる回路
CN1189933C (zh) * 2002-02-26 2005-02-16 台湾积体电路制造股份有限公司 垂直型半导体可变电阻装置及其制造方法
JP2006136086A (ja) * 2004-11-04 2006-05-25 Hitachi Ltd 電流検知方法と電流検知装置及びこの電流検知装置を用いた電力変換装置並びにこの電力変換装置を用いた車両

Also Published As

Publication number Publication date
JP4696701B2 (ja) 2011-06-08
US7659765B2 (en) 2010-02-09
TWI316324B (zh) 2009-10-21
CN101171748A (zh) 2008-04-30
KR101241264B1 (ko) 2013-03-14
CN101171748B (zh) 2010-05-19
WO2006132090A1 (ja) 2006-12-14
KR20080011649A (ko) 2008-02-05
JP2006345018A (ja) 2006-12-21
US20090284311A1 (en) 2009-11-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees