TW200704800A - Sputtering target and process for producing the same - Google Patents

Sputtering target and process for producing the same

Info

Publication number
TW200704800A
TW200704800A TW095111755A TW95111755A TW200704800A TW 200704800 A TW200704800 A TW 200704800A TW 095111755 A TW095111755 A TW 095111755A TW 95111755 A TW95111755 A TW 95111755A TW 200704800 A TW200704800 A TW 200704800A
Authority
TW
Taiwan
Prior art keywords
powder
sputtering target
refractive index
producing
target
Prior art date
Application number
TW095111755A
Other languages
English (en)
Other versions
TWI346713B (zh
Inventor
Atsushi Nakamura
Masataka Yahagi
Kenji Sato
Original Assignee
Nippon Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co filed Critical Nippon Mining Co
Publication of TW200704800A publication Critical patent/TW200704800A/zh
Application granted granted Critical
Publication of TWI346713B publication Critical patent/TWI346713B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/6261—Milling
    • C04B35/6262—Milling of calcined, sintered clinker or ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62685—Treating the starting powders individually or as mixtures characterised by the order of addition of constituents or additives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/604—Pressing at temperatures other than sintering temperatures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/726—Sulfur content
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646—Optical properties
    • C04B2235/9653—Translucent or transparent ceramics other than alumina
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
TW095111755A 2005-05-30 2006-04-03 Sputtering target and process for producing the same TW200704800A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005156646 2005-05-30

Publications (2)

Publication Number Publication Date
TW200704800A true TW200704800A (en) 2007-02-01
TWI346713B TWI346713B (zh) 2011-08-11

Family

ID=37481343

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100117929A TW201144468A (en) 2005-05-30 2006-04-03 Sputtering target and process for producing the same
TW095111755A TW200704800A (en) 2005-05-30 2006-04-03 Sputtering target and process for producing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW100117929A TW201144468A (en) 2005-05-30 2006-04-03 Sputtering target and process for producing the same

Country Status (5)

Country Link
EP (1) EP1887100B1 (zh)
JP (1) JP4828529B2 (zh)
CN (1) CN101189358B (zh)
TW (2) TW201144468A (zh)
WO (1) WO2006129410A1 (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101460425B (zh) * 2006-06-08 2012-10-24 住友金属矿山株式会社 氧化物烧结体、靶、用它制得的透明导电膜以及透明导电性基材
WO2009145152A1 (ja) * 2008-05-27 2009-12-03 株式会社カネカ 透明導電膜およびその製造方法
EP2139001A1 (en) * 2008-06-26 2009-12-30 Deutsche Thomson OHG Storage medium for optical data and optical data disc
WO2010090101A1 (ja) * 2009-02-06 2010-08-12 株式会社カネカ 薄膜光電変換装置およびその製造方法
JP5418105B2 (ja) * 2009-09-18 2014-02-19 東ソー株式会社 複合酸化物焼結体、酸化物透明導電膜、及びその製造方法
EP2514851B1 (en) * 2009-12-16 2015-04-15 Mitsubishi Materials Corporation Transparent conductive film, solar cell using same, sputtering target for forming said transparent conductive film, and manufacturing method therefor
JP5613926B2 (ja) * 2010-08-02 2014-10-29 三菱マテリアル株式会社 透明導電膜用スパッタリングターゲットおよびその製造方法
JP5488970B2 (ja) * 2009-12-16 2014-05-14 三菱マテリアル株式会社 透明導電膜、この透明導電膜を用いた太陽電池および透明導電膜を形成するためのスパッタリングターゲット
CN102162085A (zh) * 2010-02-16 2011-08-24 三菱综合材料株式会社 薄膜形成用气相沉积材、具备该薄膜的薄膜片材和层压片材
CN102191461A (zh) * 2010-03-04 2011-09-21 三菱综合材料株式会社 薄膜形成用气相沉积材、具备该薄膜的薄膜片材和层压片材
JP2011184724A (ja) * 2010-03-05 2011-09-22 Tdk Corp スパッタリングターゲットの製造方法、及び、光メディアの製造方法
JP5632697B2 (ja) * 2010-10-12 2014-11-26 株式会社カネカ 薄膜太陽電池
EP2657316A4 (en) * 2010-12-24 2015-10-07 Oceans King Lighting Science ELECTRICALLY CONDUCTIVE FILM, MANUFACTURING METHOD AND USE THEREOF
CN102560391A (zh) * 2010-12-24 2012-07-11 海洋王照明科技股份有限公司 一种导电膜制备方法、导电膜及应用
CN103270191B (zh) * 2011-02-10 2016-10-05 三菱综合材料株式会社 用于形成太阳能电池用透明膜的溅射靶及其制造方法
WO2012114713A1 (ja) * 2011-02-25 2012-08-30 三菱マテリアル株式会社 透明酸化物膜およびその製造方法
CN102676992B (zh) * 2011-03-09 2014-01-08 海洋王照明科技股份有限公司 一种导电膜、其制备方法和应用
CN103403213A (zh) * 2011-03-25 2013-11-20 海洋王照明科技股份有限公司 多元素掺杂氧化锌薄膜及其制备方法和应用
JP5141794B2 (ja) * 2011-06-10 2013-02-13 三菱マテリアル株式会社 有機ｅｌ用透明導電膜およびこの透明導電膜を用いた有機ｅｌ素子
KR101731847B1 (ko) * 2011-07-01 2017-05-08 우베 마테리알즈 가부시키가이샤 스퍼터링용 MgO 타겟
JP5760857B2 (ja) * 2011-08-29 2015-08-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法並びに該ターゲットを用いた薄膜、該薄膜を備える薄膜シート、積層シート
JP5747738B2 (ja) * 2011-08-29 2015-07-15 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法並びに該ターゲットを用いた薄膜、該薄膜を備える薄膜シート、積層シート
JP5730729B2 (ja) * 2011-09-20 2015-06-10 株式会社カネカ 透明電極付き基板
JP6070194B2 (ja) * 2011-10-28 2017-02-01 東レ株式会社 ガスバリア性フィルム
JP5837183B2 (ja) * 2012-03-28 2015-12-24 Jx日鉱日石金属株式会社 低屈折率膜形成用焼結体及びその製造方法
KR20190065483A (ko) * 2012-03-30 2019-06-11 제이엑스금속주식회사 스퍼터링 타깃 및 그 제조 방법
JP5954620B2 (ja) * 2012-04-04 2016-07-20 三菱マテリアル株式会社 透明酸化物膜形成用スパッタリングターゲット及びその製造方法
KR101583124B1 (ko) 2012-07-09 2016-01-07 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 도전성 산화물 소결체 및 그 제조 방법
JP6278229B2 (ja) * 2012-08-10 2018-02-14 三菱マテリアル株式会社 透明酸化物膜形成用スパッタリングターゲット及びその製造方法
WO2014069367A1 (ja) * 2012-10-30 2014-05-08 Jx日鉱日石金属株式会社 導電性酸化物焼結体及び該導電性酸化物を用いた低屈折率膜
WO2014112209A1 (ja) * 2013-01-21 2014-07-24 Jx日鉱日石金属株式会社 低屈折率のアモルファス透明導電膜作製用焼結体及び低屈折率のアモルファス透明導電膜
EP2767610B1 (en) * 2013-02-18 2015-12-30 Heraeus Deutschland GmbH & Co. KG ZnO-Al2O3-MgO sputtering target and method for the production thereof
DE102015001945A1 (de) 2015-02-16 2016-08-18 Ellenberger & Poensgen Gmbh Schutzschalter und Verfahren zu dessen Betrieb
US11434172B2 (en) 2018-10-31 2022-09-06 Idemitsu Kosan Co., Ltd. Sintered body

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2805813B2 (ja) * 1988-08-09 1998-09-30 東ソー株式会社 スパッタリングターゲット及びその製造方法
JPH0350148A (ja) * 1989-07-19 1991-03-04 Tosoh Corp 酸化亜鉛焼結体及びその製造法並びに用途
JP3636914B2 (ja) * 1998-02-16 2005-04-06 株式会社日鉱マテリアルズ 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット
JP3841388B2 (ja) * 1998-02-16 2006-11-01 日鉱金属株式会社 光ディスク用保護膜及び光ディスクの保護膜形成用スパッタリングターゲット
JPH11322332A (ja) * 1998-05-21 1999-11-24 Sumitomo Metal Mining Co Ltd ＺｎＯ系焼結体およびその製造方法
JP2003105533A (ja) * 2001-10-01 2003-04-09 Mitsubishi Heavy Ind Ltd 透明導電膜の製造方法及び透明導電膜
JP4793773B2 (ja) * 2003-03-04 2011-10-12 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
WO2006129410A1 (ja) 2006-12-07
EP1887100A4 (en) 2010-07-21
CN101189358B (zh) 2010-05-19
TW201144468A (en) 2011-12-16
JPWO2006129410A1 (ja) 2008-12-25
TWI346713B (zh) 2011-08-11
CN101189358A (zh) 2008-05-28
EP1887100A1 (en) 2008-02-13
TWI368662B (zh) 2012-07-21
EP1887100B1 (en) 2011-05-11
JP4828529B2 (ja) 2011-11-30

Similar Documents

Publication Publication Date Title
TW200704800A (en) Sputtering target and process for producing the same
TW200738580A (en) A high resistivity refractory with a high zirconia content
Chu et al. Optical and structural properties of Sr–Nb–phosphate glasses
MY150314A (en) Glass for information recording medium substrate, glass substrate for information recording medium and magnetic disk
EA201390089A1 (ru) Огнеупорный материал, содержащий оксид хрома
EA200800644A1 (ru) Спечённое огнеупорное изделие, обладающее повышенной устойчивостью к температурному шоку
FR2363535A1 (fr) Composition et article refractaire formes a partir de grains du systeme alumine-zircone-silice coules a l'etat fondu
WO2010001065A3 (fr) GRAINS FONDUS D'OXYDES COMPRENANT AL, TI, MG et ZR ET PRODUITS CERAMIQUES COMPORTANT DE TELS GRAINS
WO2009133194A3 (de) Keramischer werkstoff, verfahren zur herstellung des keramischen werkstoffs und bauelement mit dem keramischen werkstoff
Shan et al. Influence of TiO2 on the physical properties of low-temperature ceramic vitrified bond and mechanical properties of CBN composites
WO2011077380A3 (fr) Poudre de granules de zircone et d'alumine
WO2008108197A1 (ja) チタン酸アルカリ金属塩固着チタン酸塩、その製造方法及びチタン酸アルカリ金属塩固着チタン酸塩を含有する樹脂組成物
DE602006015619D1 (de) Innenbeschichtung für einen vergasungsreaktor
EA035245B9 (ru) Неформованный продукт для ремонта стеклоплавильных печей
UA99473C2 (ru) Литой огнеупорный продукт с высоким содержанием диоксида циркония и стекловаренная печь, содержащая его
JP2006152443A5 (zh)
WO2009004349A3 (en) Glass polycarboxylate cements
WO2013124183A3 (de) Thermoschock- und korrosionsbeständiger keramikwerkstoff auf der basis von calciumzirkonat und verfahren zu seiner herstellung
Suescum-Morales et al. Use of carbonated water as kneading in mortars made with recycled aggregates
Torres et al. Effect of some additives on the development of spinel-based glass-ceramic glazes for floor-tiles
MX2018014155A (es) Granulados de espinela refractarios adecuados para la elastificacion de productos refractarios de ceramica gruesa, procedimientos para su fabricacion y su uso.
KR920000659A (ko) 마그네시아-알루미나계 스피넬(spinel)클링커(clinker) 및 이것을 사용한 내화물의 제조법
Felaous et al. Optimizing Alkaline Activation of Natural Volcanic Pozzolan for Eco-Friendly Materials Production: An Investigation of NaOH Molarity and Na2SiO3-to-NaOH Ratio
CN109592969B8 (zh) 一种低铬电熔半再结合复合尖晶石砖
WO2011012510A3 (fr) Procédé d'oxydo-réduction en boucle utilisant comme masse oxydo-réductrice une composition à base d'oxyde supporté de cérium ou de cérium, de zirconium et/ou de terre rare