TW200702299A - Single crystalline diamond and producing method thereof - Google Patents

Single crystalline diamond and producing method thereof

Info

Publication number
TW200702299A
TW200702299A TW095110951A TW95110951A TW200702299A TW 200702299 A TW200702299 A TW 200702299A TW 095110951 A TW095110951 A TW 095110951A TW 95110951 A TW95110951 A TW 95110951A TW 200702299 A TW200702299 A TW 200702299A
Authority
TW
Taiwan
Prior art keywords
single crystalline
crystalline diamond
diamond
linear polarized
producing method
Prior art date
Application number
TW095110951A
Other languages
English (en)
Other versions
TWI367859B (en
Inventor
Kiichi Meguro
Yoshiyuki Yamamoto
Takahiro Imai
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36809674&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200702299(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200702299A publication Critical patent/TW200702299A/zh
Application granted granted Critical
Publication of TWI367859B publication Critical patent/TWI367859B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095110951A 2005-04-15 2006-03-29 Single crystalline diamond and producing method thereof TWI367859B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005117948 2005-04-15
JP2006060511A JP5002982B2 (ja) 2005-04-15 2006-03-07 単結晶ダイヤモンドの製造方法

Publications (2)

Publication Number Publication Date
TW200702299A true TW200702299A (en) 2007-01-16
TWI367859B TWI367859B (en) 2012-07-11

Family

ID=36809674

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110951A TWI367859B (en) 2005-04-15 2006-03-29 Single crystalline diamond and producing method thereof

Country Status (6)

Country Link
US (2) US7655208B2 (zh)
EP (1) EP1712661B2 (zh)
JP (1) JP5002982B2 (zh)
CN (1) CN1865534B (zh)
DE (1) DE602006004100D1 (zh)
TW (1) TWI367859B (zh)

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* Cited by examiner, † Cited by third party
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EP1832672B1 (en) * 2004-11-05 2014-01-01 Sumitomo Electric Industries, Ltd. Single-crystal diamond
WO2008090514A2 (en) 2007-01-22 2008-07-31 Element Six Limited Diamond electronic devices and methods for their manufacture
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
JP5168563B2 (ja) * 2008-07-16 2013-03-21 住友電気工業株式会社 ダイヤモンド単結晶基板及びその製造方法
JP5239574B2 (ja) * 2008-07-18 2013-07-17 住友電気工業株式会社 気相合成法で作製されたダイヤモンド単結晶基板及びその製造方法
GB0900771D0 (en) 2009-01-16 2009-03-04 Element Six Ltd Diamond
CN104603335B (zh) * 2013-04-09 2017-10-17 住友电气工业株式会社 单晶金刚石和金刚石工具
KR101731736B1 (ko) 2013-04-30 2017-04-28 스미토모덴키고교가부시키가이샤 단결정 다이아몬드 및 다이아몬드 공구
JP6112485B2 (ja) * 2013-09-19 2017-04-12 国立研究開発法人産業技術総合研究所 単結晶ダイヤモンドの製造方法
JP6708972B2 (ja) 2014-07-22 2020-06-10 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法、単結晶ダイヤモンドを含む工具、ならびに単結晶ダイヤモンドを含む部品
SG10201505413VA (en) * 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
CN111256830B (zh) * 2020-03-30 2022-08-23 湖州中芯半导体科技有限公司 一种用cvd金刚石单晶检测偏振光的方法
CN112048760A (zh) * 2020-09-08 2020-12-08 宁波晶钻工业科技有限公司 单晶金刚石外延生长方法、单晶金刚石及其片状籽晶
CN114836829A (zh) * 2022-04-27 2022-08-02 河南天璇半导体科技有限责任公司 一种mpcvd法生产单晶金刚石的方法

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JPH0658891B2 (ja) 1987-03-12 1994-08-03 住友電気工業株式会社 薄膜単結晶ダイヤモンド基板
JP2730145B2 (ja) 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
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KR101052395B1 (ko) * 2002-09-06 2011-07-28 엘리멘트 식스 리미티드 유색 다이아몬드
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
GB0303860D0 (en) * 2003-02-19 2003-03-26 Element Six Ltd CVD diamond in wear applications
US7115241B2 (en) * 2003-07-14 2006-10-03 Carnegie Institution Of Washington Ultrahard diamonds and method of making thereof
GB0318215D0 (en) 2003-08-04 2003-09-03 Element Six Ltd Diamond microelectrodes
DE602004016394D1 (de) * 2003-12-12 2008-10-16 Element Six Ltd Verfahren zum einbringen einer markierung in einen cvd-diamanten
JP4385764B2 (ja) * 2003-12-26 2009-12-16 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法
US7481879B2 (en) * 2004-01-16 2009-01-27 Sumitomo Electric Industries, Ltd. Diamond single crystal substrate manufacturing method and diamond single crystal substrate
JP4697514B2 (ja) * 2004-01-16 2011-06-08 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法およびダイヤモンド単結晶基板
JP4736338B2 (ja) * 2004-03-24 2011-07-27 住友電気工業株式会社 ダイヤモンド単結晶基板
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
EP1708255A3 (en) * 2005-03-28 2010-08-25 Sumitomo Electric Industries, Ltd. Diamond substrate and manufacturing method thereof
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法

Also Published As

Publication number Publication date
DE602006004100D1 (de) 2009-01-22
JP2006315942A (ja) 2006-11-24
TWI367859B (en) 2012-07-11
US20100111812A1 (en) 2010-05-06
CN1865534A (zh) 2006-11-22
US20060231015A1 (en) 2006-10-19
CN1865534B (zh) 2011-11-30
EP1712661B1 (en) 2008-12-10
US7655208B2 (en) 2010-02-02
EP1712661B2 (en) 2015-04-08
JP5002982B2 (ja) 2012-08-15
EP1712661A1 (en) 2006-10-18

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