TW200643158A - CMP polishing agent, a method for polishing a substrate and method for manufacturing semiconductor device using the same, and an additive for CMP polishing agent - Google Patents
CMP polishing agent, a method for polishing a substrate and method for manufacturing semiconductor device using the same, and an additive for CMP polishing agentInfo
- Publication number
- TW200643158A TW200643158A TW095126934A TW95126934A TW200643158A TW 200643158 A TW200643158 A TW 200643158A TW 095126934 A TW095126934 A TW 095126934A TW 95126934 A TW95126934 A TW 95126934A TW 200643158 A TW200643158 A TW 200643158A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- substrate
- cmp polishing
- polished
- film
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17282199 | 1999-06-18 | ||
JP20484299 | 1999-07-19 | ||
JP33222199 | 1999-11-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200643158A true TW200643158A (en) | 2006-12-16 |
TWI292781B TWI292781B (en) | 2008-01-21 |
Family
ID=27323685
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095126934A TWI292781B (en) | 1999-06-18 | 2000-06-16 | Cmp polishing agent, a method for polishing a substrate and method for manufacturing semiconductor device using the same, and an additive for cmp polishing agent |
TW089111804A TWI265958B (en) | 1999-06-18 | 2000-06-16 | CMP polishing agent, a method for polishing a substrate and method for manufacturing semiconductor device using the same, and an additive for CMP polishing agent |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089111804A TWI265958B (en) | 1999-06-18 | 2000-06-16 | CMP polishing agent, a method for polishing a substrate and method for manufacturing semiconductor device using the same, and an additive for CMP polishing agent |
Country Status (7)
Country | Link |
---|---|
US (3) | US7410409B1 (zh) |
EP (2) | EP1205965B1 (zh) |
JP (1) | JP4729834B2 (zh) |
KR (2) | KR20050118314A (zh) |
DE (1) | DE60031857T2 (zh) |
TW (2) | TWI292781B (zh) |
WO (1) | WO2000079577A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI496855B (zh) * | 2012-07-11 | 2015-08-21 | Cabot Microelectronics Corp | 用於氮化矽材料之選擇性拋光之組合物及方法 |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050118314A (ko) * | 1999-06-18 | 2005-12-16 | 히다치 가세고교 가부시끼가이샤 | Cmp연마제, 이것을 사용한 기판의 연마방법과반도체장치의 제조방법 및 cmp연마제용 첨가제 |
KR100480760B1 (ko) * | 2000-10-02 | 2005-04-07 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 세륨계 연마재 및 세륨계 연마재의 제조방법 |
KR100447254B1 (ko) * | 2001-12-31 | 2004-09-07 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택 플러그 형성방법 |
US6811474B2 (en) * | 2002-07-19 | 2004-11-02 | Cabot Microelectronics Corporation | Polishing composition containing conducting polymer |
EP1566420A1 (en) | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
KR100588404B1 (ko) * | 2004-03-16 | 2006-06-12 | 삼성코닝 주식회사 | 반도체 박막 연마용 산화세륨 슬러리 |
US7582127B2 (en) | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
US7247567B2 (en) | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
US20070218811A1 (en) * | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
US20080254717A1 (en) * | 2004-09-28 | 2008-10-16 | Hitachi Chemical Co., Ltd. | Cmp Polishing Slurry and Method of Polishing Substrate |
US7988878B2 (en) | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
TWI323741B (en) * | 2004-12-16 | 2010-04-21 | K C Tech Co Ltd | Abrasive particles, polishing slurry, and producing method thereof |
US7790618B2 (en) | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
US7674716B2 (en) | 2004-12-29 | 2010-03-09 | Lg Chem. Ltd. | Adjuvant for chemical mechanical polishing slurry |
US7294044B2 (en) * | 2005-04-08 | 2007-11-13 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
KR100641348B1 (ko) * | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
KR100725699B1 (ko) * | 2005-09-02 | 2007-06-07 | 주식회사 엘지화학 | 일액형 cmp 슬러리용 산화 세륨 분말, 그 제조방법,이를 포함하는 일액형 cmp 슬러리 조성물, 및 상기슬러리를 사용하는 얕은 트랜치 소자 분리방법 |
EP1838620B1 (en) * | 2005-10-14 | 2016-12-14 | Lg Chem, Ltd. | Method for preparing a cerium oxide powder for a chemical mechanical polishing slurry |
EP1943320B1 (en) * | 2005-10-25 | 2009-04-15 | Freescale Semiconductor, Inc. | Method for testing a slurry used to form a semiconductor device |
KR100812052B1 (ko) | 2005-11-14 | 2008-03-10 | 주식회사 엘지화학 | 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 cmp 슬러리 |
KR100786948B1 (ko) | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | 연마 선택비 조절제 및 이를 함유한 cmp 슬러리 |
KR100786949B1 (ko) | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | 연마 선택도 조절 보조제 및 이를 함유한 cmp 슬러리 |
EP1994112B1 (en) | 2006-01-25 | 2018-09-19 | LG Chem, Ltd. | Cmp slurry and method for polishing semiconductor wafer using the same |
US20070176141A1 (en) * | 2006-01-30 | 2007-08-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
JP5204960B2 (ja) | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
JP2009123880A (ja) * | 2007-11-14 | 2009-06-04 | Showa Denko Kk | 研磨組成物 |
CN102084465A (zh) * | 2008-02-01 | 2011-06-01 | 福吉米株式会社 | 研磨用组合物以及使用其的研磨方法 |
JP4784614B2 (ja) * | 2008-02-25 | 2011-10-05 | Jsr株式会社 | 化学機械研磨用水系分散体 |
SG189534A1 (en) * | 2010-11-08 | 2013-06-28 | Fujimi Inc | Composition for polishing and method of polishing semiconductor substrate using same |
US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
US20140154884A1 (en) * | 2011-05-24 | 2014-06-05 | Kuraray Co., Ltd. | Erosion inhibitor for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method |
EP2662885A1 (en) * | 2012-05-07 | 2013-11-13 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle |
JP5927059B2 (ja) * | 2012-06-19 | 2016-05-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた基板の製造方法 |
JP2014041978A (ja) * | 2012-08-23 | 2014-03-06 | Fujimi Inc | 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法 |
US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
US9199354B2 (en) | 2012-10-29 | 2015-12-01 | Wayne O. Duescher | Flexible diaphragm post-type floating and rigid abrading workholder |
US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
US9604339B2 (en) | 2012-10-29 | 2017-03-28 | Wayne O. Duescher | Vacuum-grooved membrane wafer polishing workholder |
US8998678B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Spider arm driven flexible chamber abrading workholder |
US9233452B2 (en) | 2012-10-29 | 2016-01-12 | Wayne O. Duescher | Vacuum-grooved membrane abrasive polishing wafer workholder |
US9011207B2 (en) | 2012-10-29 | 2015-04-21 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
JP2014216464A (ja) | 2013-04-25 | 2014-11-17 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物および基板研磨方法 |
JP2016522855A (ja) * | 2013-05-15 | 2016-08-04 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | N−ビニル−ホモポリマーおよびn−ビニルコポリマーからなる群から選択される1種または複数のポリマーを含む化学機械研磨組成物 |
CN105209563A (zh) * | 2013-05-15 | 2015-12-30 | 巴斯夫欧洲公司 | 化学机械抛光(cmp)组合物在抛光含有至少一种iii-v 族材料的基材或层中的用途 |
JP5736430B2 (ja) * | 2013-10-02 | 2015-06-17 | 山口精研工業株式会社 | サファイア基板用研磨液組成物、及びサファイア基板の研磨方法 |
JP6581198B2 (ja) * | 2015-01-12 | 2019-09-25 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 化学機械平坦化組成物用の複合研磨粒子及びその使用方法 |
US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
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US3574823A (en) * | 1968-08-05 | 1971-04-13 | Colgate Palmolive Co | Dentifrice containing visible agglomerated particles of polishing agents |
FR2414071A1 (fr) | 1978-01-05 | 1979-08-03 | Essilor Int | Materiau de polissage, notamment pour lentille ophtalmique en matiere organique |
JPS6243482A (ja) * | 1985-08-21 | 1987-02-25 | Sanyo Chem Ind Ltd | 研磨加工液 |
JP2714411B2 (ja) * | 1988-12-12 | 1998-02-16 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研摩用組成物 |
US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
JPH063342A (ja) * | 1992-06-17 | 1994-01-11 | Toyo Electric Mfg Co Ltd | 有機材料の発生ガス分析装置 |
JP2738291B2 (ja) * | 1994-02-14 | 1998-04-08 | 日本電気株式会社 | 機械・化学研磨方法および研磨装置 |
JP3278532B2 (ja) * | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
KR970042941A (ko) | 1995-12-29 | 1997-07-26 | 베일리 웨인 피 | 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물 |
EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
US6420269B2 (en) * | 1996-02-07 | 2002-07-16 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same |
JPH09270402A (ja) * | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
JPH10102040A (ja) * | 1996-09-30 | 1998-04-21 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
US5876490A (en) * | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
JPH10204416A (ja) * | 1997-01-21 | 1998-08-04 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
US6248143B1 (en) * | 1998-01-27 | 2001-06-19 | Showa Denko Kabushiki Kaisha | Composition for polishing glass and polishing method |
KR100581649B1 (ko) * | 1998-06-10 | 2006-05-23 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 금속 cmp에서 광택화를 위한 조성물 및 방법 |
JP2000109802A (ja) * | 1998-10-08 | 2000-04-18 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
KR20050118314A (ko) * | 1999-06-18 | 2005-12-16 | 히다치 가세고교 가부시끼가이샤 | Cmp연마제, 이것을 사용한 기판의 연마방법과반도체장치의 제조방법 및 cmp연마제용 첨가제 |
JP2001052718A (ja) * | 1999-08-12 | 2001-02-23 | Fuji Electric Co Ltd | 触媒の製造方法と該触媒を用いた燃料電池 |
US6299795B1 (en) * | 2000-01-18 | 2001-10-09 | Praxair S.T. Technology, Inc. | Polishing slurry |
US6416685B1 (en) * | 2000-04-11 | 2002-07-09 | Honeywell International Inc. | Chemical mechanical planarization of low dielectric constant materials |
-
2000
- 2000-06-15 KR KR1020057022591A patent/KR20050118314A/ko not_active Application Discontinuation
- 2000-06-15 JP JP2001505048A patent/JP4729834B2/ja not_active Expired - Lifetime
- 2000-06-15 EP EP00937240A patent/EP1205965B1/en not_active Expired - Lifetime
- 2000-06-15 DE DE60031857T patent/DE60031857T2/de not_active Expired - Lifetime
- 2000-06-15 WO PCT/JP2000/003891 patent/WO2000079577A1/ja active IP Right Grant
- 2000-06-15 KR KR1020017016019A patent/KR100796070B1/ko active IP Right Grant
- 2000-06-15 EP EP06009641A patent/EP1691401B1/en not_active Expired - Lifetime
- 2000-06-15 US US10/018,188 patent/US7410409B1/en not_active Expired - Fee Related
- 2000-06-16 TW TW095126934A patent/TWI292781B/zh not_active IP Right Cessation
- 2000-06-16 TW TW089111804A patent/TWI265958B/zh not_active IP Right Cessation
-
2007
- 2007-03-23 US US11/727,071 patent/US20070169421A1/en not_active Abandoned
-
2009
- 2009-06-15 US US12/484,973 patent/US8002860B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI496855B (zh) * | 2012-07-11 | 2015-08-21 | Cabot Microelectronics Corp | 用於氮化矽材料之選擇性拋光之組合物及方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1205965A1 (en) | 2002-05-15 |
TWI292781B (en) | 2008-01-21 |
DE60031857D1 (de) | 2006-12-28 |
EP1205965B1 (en) | 2006-11-15 |
EP1691401A3 (en) | 2006-10-25 |
US20090253355A1 (en) | 2009-10-08 |
KR20050118314A (ko) | 2005-12-16 |
WO2000079577A1 (fr) | 2000-12-28 |
EP1691401B1 (en) | 2012-06-13 |
JP4729834B2 (ja) | 2011-07-20 |
US7410409B1 (en) | 2008-08-12 |
DE60031857T2 (de) | 2007-09-13 |
EP1205965A4 (en) | 2002-10-24 |
US8002860B2 (en) | 2011-08-23 |
KR20020015697A (ko) | 2002-02-28 |
US20070169421A1 (en) | 2007-07-26 |
KR100796070B1 (ko) | 2008-01-21 |
TWI265958B (en) | 2006-11-11 |
EP1691401A2 (en) | 2006-08-16 |
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