TW200643130A - Method for preparing a polishing slurry having high dispersion stability - Google Patents
Method for preparing a polishing slurry having high dispersion stabilityInfo
- Publication number
- TW200643130A TW200643130A TW095110532A TW95110532A TW200643130A TW 200643130 A TW200643130 A TW 200643130A TW 095110532 A TW095110532 A TW 095110532A TW 95110532 A TW95110532 A TW 95110532A TW 200643130 A TW200643130 A TW 200643130A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- preparing
- polishing slurry
- dispersion stability
- high dispersion
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 7
- 239000006185 dispersion Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000002002 slurry Substances 0.000 title abstract 3
- 239000002245 particle Substances 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 125000000129 anionic group Chemical group 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20050025496 | 2005-03-28 | ||
KR20050076021 | 2005-08-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200643130A true TW200643130A (en) | 2006-12-16 |
TWI387626B TWI387626B (zh) | 2013-03-01 |
Family
ID=37033780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095110532A TWI387626B (zh) | 2005-03-28 | 2006-03-27 | 製備具有高分散穩定度之拋光泥漿的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060213126A1 (zh) |
JP (1) | JP5198738B2 (zh) |
KR (1) | KR101134590B1 (zh) |
CN (1) | CN1840602B (zh) |
DE (1) | DE102006013728A1 (zh) |
TW (1) | TWI387626B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007062572A1 (de) * | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
DE102008008183A1 (de) * | 2008-02-08 | 2009-08-13 | Evonik Degussa Gmbh | Ceroxidpartikel enthaltende Dispersion und deren Verwendung zum Polieren von Gläsern |
DE102008008184A1 (de) * | 2008-02-08 | 2009-08-13 | Evonik Degussa Gmbh | Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion |
JP5819036B2 (ja) * | 2008-03-25 | 2015-11-18 | 三井金属鉱業株式会社 | セリウム系研摩材スラリー |
DE102008002321A1 (de) * | 2008-06-10 | 2009-12-17 | Evonik Degussa Gmbh | Ceroxid und partikuläres Additiv enthaltende Dispersion |
JP5261065B2 (ja) * | 2008-08-08 | 2013-08-14 | シャープ株式会社 | 半導体装置の製造方法 |
CN101671525B (zh) * | 2009-09-01 | 2013-04-10 | 湖南皓志新材料股份有限公司 | 一种改善稀土抛光粉悬浮性的方法 |
JP2011218494A (ja) * | 2010-04-09 | 2011-11-04 | Mitsui Mining & Smelting Co Ltd | 研摩スラリー及びその研摩方法 |
JP5957292B2 (ja) * | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
KR101406763B1 (ko) * | 2012-12-04 | 2014-06-19 | 주식회사 케이씨텍 | 슬러리 조성물 및 첨가제 조성물 |
US9956669B2 (en) * | 2013-03-12 | 2018-05-01 | Kyushu University, National University Corporation | Polishing pad and polishing method |
JP6233296B2 (ja) | 2014-12-26 | 2017-11-22 | 株式会社Sumco | 砥粒の評価方法、および、シリコンウェーハの製造方法 |
CN109807692A (zh) * | 2017-11-21 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 一种研磨液、制备研磨液的方法和化学机械研磨方法 |
JP2022545469A (ja) * | 2019-08-21 | 2022-10-27 | アプライド マテリアルズ インコーポレイテッド | 研磨パッドの付加製造 |
CN115141548B (zh) * | 2021-03-15 | 2023-12-05 | 拓米(成都)应用技术研究院有限公司 | 一种高悬浮性氧化铈抛光液及其抛光工艺和应用 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
JPH10154672A (ja) * | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
EP0850887B1 (en) * | 1996-12-26 | 2000-03-22 | Hoya Corporation | Method for manufacturing glass product by press forming |
JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
KR100797218B1 (ko) * | 1998-12-25 | 2008-01-23 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
JP2000252245A (ja) * | 1999-03-01 | 2000-09-14 | Hitachi Chem Co Ltd | Cmp研磨液 |
JP2000248263A (ja) * | 1999-03-01 | 2000-09-12 | Hitachi Chem Co Ltd | Cmp研磨液 |
JP2001007061A (ja) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2001007060A (ja) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP4555936B2 (ja) * | 1999-07-21 | 2010-10-06 | 日立化成工業株式会社 | Cmp研磨液 |
TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
JP3525824B2 (ja) * | 1999-09-17 | 2004-05-10 | 日立化成工業株式会社 | Cmp研磨液 |
JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
US6964923B1 (en) | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
WO2003016424A1 (en) * | 2001-08-20 | 2003-02-27 | Samsung Corning Co., Ltd. | Polishing slurry comprising silica-coated ceria |
KR100442873B1 (ko) * | 2002-02-28 | 2004-08-02 | 삼성전자주식회사 | 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법 |
KR100477939B1 (ko) * | 2002-04-15 | 2005-03-18 | 주식회사 엘지화학 | 단결정 산화세륨 분말의 제조방법 |
JP2003064351A (ja) * | 2002-06-04 | 2003-03-05 | Hitachi Chem Co Ltd | Cmp研磨液 |
JP2004335897A (ja) * | 2003-05-09 | 2004-11-25 | Jsr Corp | 化学機械研磨用水系分散体 |
KR101090913B1 (ko) * | 2004-08-11 | 2011-12-08 | 주식회사 동진쎄미켐 | 화학 기계적 연마를 위한 산화세륨 연마입자 분산액 및 그제조방법 |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7291280B2 (en) * | 2004-12-28 | 2007-11-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride |
WO2006086265A2 (en) * | 2005-02-07 | 2006-08-17 | Applied Materials, Inc. | Method and composition for polishing a substrate |
-
2006
- 2006-03-24 US US11/389,396 patent/US20060213126A1/en not_active Abandoned
- 2006-03-24 DE DE102006013728A patent/DE102006013728A1/de not_active Ceased
- 2006-03-24 KR KR1020060026820A patent/KR101134590B1/ko not_active IP Right Cessation
- 2006-03-27 TW TW095110532A patent/TWI387626B/zh not_active IP Right Cessation
- 2006-03-28 JP JP2006087220A patent/JP5198738B2/ja not_active Expired - Fee Related
- 2006-03-28 CN CN2006100584840A patent/CN1840602B/zh not_active Expired - Fee Related
-
2009
- 2009-05-13 US US12/464,955 patent/US20090229189A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP5198738B2 (ja) | 2013-05-15 |
TWI387626B (zh) | 2013-03-01 |
US20090229189A1 (en) | 2009-09-17 |
DE102006013728A1 (de) | 2006-10-19 |
CN1840602B (zh) | 2011-05-04 |
US20060213126A1 (en) | 2006-09-28 |
KR20060103858A (ko) | 2006-10-04 |
CN1840602A (zh) | 2006-10-04 |
KR101134590B1 (ko) | 2012-04-09 |
JP2006279050A (ja) | 2006-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |