TW200634476A - Tunable reference voltage generator - Google Patents

Tunable reference voltage generator

Info

Publication number
TW200634476A
TW200634476A TW094140218A TW94140218A TW200634476A TW 200634476 A TW200634476 A TW 200634476A TW 094140218 A TW094140218 A TW 094140218A TW 94140218 A TW94140218 A TW 94140218A TW 200634476 A TW200634476 A TW 200634476A
Authority
TW
Taiwan
Prior art keywords
reference voltage
feedback
voltage
signal
feedback voltage
Prior art date
Application number
TW094140218A
Other languages
English (en)
Inventor
Jong-Hyoung Lim
Kwang-Il Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200634476A publication Critical patent/TW200634476A/zh

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Liquid Crystal Display Device Control (AREA)
TW094140218A 2004-11-17 2005-11-16 Tunable reference voltage generator TW200634476A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040093995A KR100684063B1 (ko) 2004-11-17 2004-11-17 조절가능한 기준전압 발생회로

Publications (1)

Publication Number Publication Date
TW200634476A true TW200634476A (en) 2006-10-01

Family

ID=36371606

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094140218A TW200634476A (en) 2004-11-17 2005-11-16 Tunable reference voltage generator

Country Status (4)

Country Link
US (1) US20060103451A1 (zh)
KR (1) KR100684063B1 (zh)
DE (1) DE102005056510A1 (zh)
TW (1) TW200634476A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3922261B2 (ja) * 2004-03-08 2007-05-30 セイコーエプソン株式会社 データドライバ及び表示装置
JP4861047B2 (ja) * 2006-04-24 2012-01-25 株式会社東芝 電圧発生回路及びこれを備える半導体記憶装置
KR101472586B1 (ko) * 2007-11-13 2014-12-15 엘지전자 주식회사 영상표시기기의 전압 보정회로 및 그 방법
US8786359B2 (en) * 2007-12-12 2014-07-22 Sandisk Technologies Inc. Current mirror device and method
US7821330B2 (en) * 2008-03-11 2010-10-26 International Business Machines Corporation Method and apparatus for extending the lifetime of a semiconductor chip
JP2011053957A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
US8924765B2 (en) * 2011-07-03 2014-12-30 Ambiq Micro, Inc. Method and apparatus for low jitter distributed clock calibration
US8493137B2 (en) * 2011-09-16 2013-07-23 Elpida Memory, Inc. PSRR in a voltage reference circuit
WO2014111916A1 (en) * 2013-01-17 2014-07-24 Microsemi Corp. - Analog Mixed Signal Group, Ltd. On-chip port current control arrangement
US10541679B1 (en) * 2018-10-25 2020-01-21 Avago Technologies International Sales Pte. Limited Pulse amplifier
CN111739576B (zh) * 2020-06-30 2022-06-03 西安易朴通讯技术有限公司 电源偏压调整装置、供电装置及电子设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577897B2 (ja) * 1986-10-31 1997-02-05 日本テキサス・インスツルメンツ 株式会社 定電圧電源回路
US5281906A (en) * 1991-10-29 1994-01-25 Lattice Semiconductor Corporation Tunable voltage reference circuit to provide an output voltage with a predetermined temperature coefficient independent of variation in supply voltage
JP3365804B2 (ja) * 1993-01-12 2003-01-14 株式会社日立製作所 通信回線駆動回路、及びインタフェース用ｌｓｉ、並びに通信端末装置
JP3586073B2 (ja) * 1997-07-29 2004-11-10 株式会社東芝 基準電圧発生回路
JP3497708B2 (ja) * 1997-10-09 2004-02-16 株式会社東芝 半導体集積回路
JP3779056B2 (ja) * 1998-01-30 2006-05-24 富士通株式会社 電圧発生回路、及び、ｄ／ａ変換回路
US6324103B2 (en) * 1998-11-11 2001-11-27 Hitachi, Ltd. Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device
US6229364B1 (en) * 1999-03-23 2001-05-08 Infineon Technologies North America Corp. Frequency range trimming for a delay line
US6281734B1 (en) * 1999-12-31 2001-08-28 Stmicroelectronics, Inc. Reference voltage adjustment
US20020114465A1 (en) * 2000-01-05 2002-08-22 Shen-Orr D. Chaim Digital content delivery system and method
JP3738280B2 (ja) * 2000-01-31 2006-01-25 富士通株式会社 内部電源電圧生成回路
JP4767386B2 (ja) * 2000-02-28 2011-09-07 富士通セミコンダクター株式会社 内部電圧発生回路
JP4043703B2 (ja) * 2000-09-04 2008-02-06 株式会社ルネサステクノロジ 半導体装置、マイクロコンピュータ、及びフラッシュメモリ
KR20020046490A (ko) * 2000-12-14 2002-06-21 박종섭 안정화된 기준전압 발생회로
JP5034139B2 (ja) * 2001-02-07 2012-09-26 富士通セミコンダクター株式会社 電圧発生回路および半導体記憶装置
US6542026B2 (en) * 2001-08-15 2003-04-01 Sun Microsystems, Inc. Apparatus for on-chip reference voltage generator for receivers in high speed single-ended data link
KR100553681B1 (ko) * 2003-03-06 2006-02-24 삼성전자주식회사 전압 레귤레이터 회로 및 그것을 이용한 불 휘발성 반도체메모리 장치
KR100545711B1 (ko) * 2003-07-29 2006-01-24 주식회사 하이닉스반도체 퓨즈트리밍을 이용하여 다양한 레벨의 기준전압을 출력할수 있는 기준전압 발생회로

Also Published As

Publication number Publication date
DE102005056510A1 (de) 2006-06-01
KR100684063B1 (ko) 2007-02-16
KR20060053583A (ko) 2006-05-22
US20060103451A1 (en) 2006-05-18

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