TW200633256A - A group III-V compound semiconductor and a method for producing the same - Google Patents
A group III-V compound semiconductor and a method for producing the sameInfo
- Publication number
- TW200633256A TW200633256A TW094133377A TW94133377A TW200633256A TW 200633256 A TW200633256 A TW 200633256A TW 094133377 A TW094133377 A TW 094133377A TW 94133377 A TW94133377 A TW 94133377A TW 200633256 A TW200633256 A TW 200633256A
- Authority
- TW
- Taiwan
- Prior art keywords
- compound semiconductor
- group iii
- quantum well
- type layer
- producing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004281053 | 2004-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200633256A true TW200633256A (en) | 2006-09-16 |
Family
ID=36083233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094133377A TW200633256A (en) | 2004-09-28 | 2005-09-26 | A group III-V compound semiconductor and a method for producing the same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090200538A1 (zh) |
| KR (1) | KR20070054722A (zh) |
| CN (1) | CN100511737C (zh) |
| DE (1) | DE112005002319T5 (zh) |
| GB (1) | GB2432974A (zh) |
| TW (1) | TW200633256A (zh) |
| WO (1) | WO2006035852A2 (zh) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5249100B2 (ja) * | 2008-03-31 | 2013-07-31 | 日本碍子株式会社 | エピタキシャル基板の製造方法 |
| JP4539752B2 (ja) * | 2008-04-09 | 2010-09-08 | 住友電気工業株式会社 | 量子井戸構造の形成方法および半導体発光素子の製造方法 |
| JP2010199236A (ja) * | 2009-02-24 | 2010-09-09 | Sumitomo Electric Ind Ltd | 発光素子の製造方法および発光素子 |
| KR101754900B1 (ko) * | 2010-04-09 | 2017-07-06 | 엘지이노텍 주식회사 | 발광 소자 |
| US8519431B2 (en) | 2011-03-08 | 2013-08-27 | Micron Technology, Inc. | Thyristors |
| KR101238878B1 (ko) * | 2011-04-11 | 2013-03-04 | 고려대학교 산학협력단 | 고효율 무분극 질화갈륨계 발광 소자 및 그 제조 방법 |
| GR1007933B (el) | 2011-08-11 | 2013-07-04 | Γεωργιος Αλεξανδρου Μαυροειδης | Στεγανο φρεατιο εξωτερικου χωρου για τη διελευση καλωδιων |
| JP2015018840A (ja) * | 2013-07-08 | 2015-01-29 | 株式会社東芝 | 半導体発光素子 |
| FR3028671B1 (fr) * | 2014-11-19 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente a puits quantiques dopes et procede de fabrication associe |
| DE102015109793A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| CN107346728A (zh) * | 2016-05-05 | 2017-11-14 | 上海芯晨科技有限公司 | 一种大尺寸硅衬底iii族氮化物外延生长方法 |
| JP7041461B2 (ja) * | 2016-10-27 | 2022-03-24 | 株式会社サイオクス | 半絶縁性結晶、ｎ型半導体結晶およびｐ型半導体結晶 |
| US10971652B2 (en) * | 2017-01-26 | 2021-04-06 | Epistar Corporation | Semiconductor device comprising electron blocking layers |
| US11056434B2 (en) | 2017-01-26 | 2021-07-06 | Epistar Corporation | Semiconductor device having specified p-type dopant concentration profile |
| US10109479B1 (en) * | 2017-07-31 | 2018-10-23 | Atomera Incorporated | Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice |
| US10950750B2 (en) * | 2019-03-06 | 2021-03-16 | Bolb Inc. | Heterostructure and light-emitting device employing the same |
| CN113707775B (zh) * | 2019-03-06 | 2022-06-03 | 博尔博公司 | 异质结构以及采用异质结构的发光器件 |
| US10916680B2 (en) * | 2019-03-06 | 2021-02-09 | Bolb Inc. | Heterostructure and light-emitting device employing the same |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| US6900465B2 (en) * | 1994-12-02 | 2005-05-31 | Nichia Corporation | Nitride semiconductor light-emitting device |
| US6346720B1 (en) * | 1995-02-03 | 2002-02-12 | Sumitomo Chemical Company, Limited | Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
| JP3304787B2 (ja) * | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
| JP3929008B2 (ja) * | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
| JP2001298214A (ja) * | 2000-02-10 | 2001-10-26 | Sharp Corp | 半導体発光素子およびその製造方法 |
| US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
| US6906352B2 (en) * | 2001-01-16 | 2005-06-14 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
| US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
| US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| TW492202B (en) * | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
| US6720570B2 (en) * | 2002-04-17 | 2004-04-13 | Tekcore Co., Ltd. | Gallium nitride-based semiconductor light emitting device |
| KR100568701B1 (ko) * | 2002-06-19 | 2006-04-07 | 니폰덴신뎅와 가부시키가이샤 | 반도체 발광 소자 |
| JP2004356522A (ja) * | 2003-05-30 | 2004-12-16 | Sumitomo Chem Co Ltd | ３−５族化合物半導体、その製造方法及びその用途 |
| JP4400507B2 (ja) * | 2005-04-28 | 2010-01-20 | ブラザー工業株式会社 | 液滴噴射装置 |
-
2005
- 2005-09-21 DE DE112005002319T patent/DE112005002319T5/de not_active Withdrawn
- 2005-09-21 US US11/663,638 patent/US20090200538A1/en not_active Abandoned
- 2005-09-21 KR KR1020077008481A patent/KR20070054722A/ko not_active Application Discontinuation
- 2005-09-21 GB GB0705310A patent/GB2432974A/en not_active Withdrawn
- 2005-09-21 CN CNB2005800321355A patent/CN100511737C/zh not_active Expired - Fee Related
- 2005-09-21 WO PCT/JP2005/017916 patent/WO2006035852A2/en active Application Filing
- 2005-09-26 TW TW094133377A patent/TW200633256A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006035852A2 (en) | 2006-04-06 |
| DE112005002319T5 (de) | 2007-08-23 |
| CN101027787A (zh) | 2007-08-29 |
| GB0705310D0 (en) | 2007-04-25 |
| US20090200538A1 (en) | 2009-08-13 |
| WO2006035852A3 (en) | 2006-06-29 |
| WO2006035852A8 (en) | 2007-06-21 |
| KR20070054722A (ko) | 2007-05-29 |
| GB2432974A (en) | 2007-06-06 |
| CN100511737C (zh) | 2009-07-08 |
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