TW200633064A - Method of manufacturing a silicon dioxide layer - Google Patents
Method of manufacturing a silicon dioxide layerInfo
- Publication number
- TW200633064A TW200633064A TW094131751A TW94131751A TW200633064A TW 200633064 A TW200633064 A TW 200633064A TW 094131751 A TW094131751 A TW 094131751A TW 94131751 A TW94131751 A TW 94131751A TW 200633064 A TW200633064 A TW 200633064A
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon dioxide
- dioxide layer
- manufacturing
- teos
- flow
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 9
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 4
- 239000000377 silicon dioxide Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 2
- 239000003085 diluting agent Substances 0.000 abstract 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2004/011616 WO2006029651A1 (en) | 2004-09-16 | 2004-09-16 | Method of manufacturing a silicon dioxide layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200633064A true TW200633064A (en) | 2006-09-16 |
| TWI298912B TWI298912B (en) | 2008-07-11 |
Family
ID=34959489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094131751A TWI298912B (en) | 2004-09-16 | 2005-09-15 | Method of manufacturing a silicon dioxide layer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7645486B2 (zh) |
| EP (1) | EP1789999B1 (zh) |
| JP (1) | JP4796066B2 (zh) |
| CN (1) | CN100474529C (zh) |
| TW (1) | TWI298912B (zh) |
| WO (1) | WO2006029651A1 (zh) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101529578B (zh) | 2006-10-27 | 2012-01-11 | 硅绝缘体技术有限公司 | 用于转移在具有空位团的基片中形成的薄层的改进方法 |
| FR2913528B1 (fr) | 2007-03-06 | 2009-07-03 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche d'oxyde enterree pour la realisation de composants electroniques ou analogues. |
| US20080248629A1 (en) * | 2007-04-06 | 2008-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate |
| FR2926674B1 (fr) * | 2008-01-21 | 2010-03-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable |
| JP2009260313A (ja) | 2008-03-26 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| JP5391599B2 (ja) * | 2008-07-14 | 2014-01-15 | オムロン株式会社 | 基板接合方法及び電子部品 |
| JP2011029594A (ja) * | 2009-06-22 | 2011-02-10 | Shin Etsu Handotai Co Ltd | Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ |
| CN102011105B (zh) * | 2010-10-12 | 2014-06-04 | 上海宏力半导体制造有限公司 | 低压淀积氧化硅工艺方法 |
| FR2968121B1 (fr) | 2010-11-30 | 2012-12-21 | Soitec Silicon On Insulator | Procede de transfert d'une couche a haute temperature |
| CN102270578A (zh) * | 2011-08-01 | 2011-12-07 | 无锡中微晶园电子有限公司 | 掺杂衬底上的超薄SiO2生长工艺 |
| CN102931063B (zh) * | 2011-08-10 | 2016-05-11 | 无锡华润上华半导体有限公司 | 双栅介质层的制作方法 |
| CN102674373B (zh) * | 2012-05-28 | 2014-01-29 | 上海华力微电子有限公司 | 利用正硅酸乙酯制备二氧化硅的设备及方法 |
| US9095319B2 (en) | 2013-03-13 | 2015-08-04 | Medtronic Vascular, Inc. | Suturing device and method for sealing an opening in a blood vessel or other biological structure |
| US9265488B2 (en) | 2013-03-13 | 2016-02-23 | Medtronic Vascular, Inc. | Suturing device and method for sealing an opening in a blood vessel or other biological structure |
| CN103526181B (zh) * | 2013-10-18 | 2016-06-22 | 四川飞阳科技有限公司 | Lpcvd自动补水系统 |
| CN104561928A (zh) * | 2014-12-24 | 2015-04-29 | 浙江大学 | 一种在玻璃基底上沉积二氧化硅薄膜的方法 |
| US9570289B2 (en) | 2015-03-06 | 2017-02-14 | Lam Research Corporation | Method and apparatus to minimize seam effect during TEOS oxide film deposition |
| CN109860507B (zh) * | 2018-12-03 | 2022-01-28 | 中国计量大学 | 一种泡沫导电网/二氧化硅制备装置及控制方法 |
| CN113363134A (zh) * | 2020-03-05 | 2021-09-07 | 上海新微技术研发中心有限公司 | 沉积氧化硅薄膜的方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4230773A (en) * | 1978-12-04 | 1980-10-28 | International Business Machines Corporation | Decreasing the porosity and surface roughness of ceramic substrates |
| US5028566A (en) * | 1987-04-10 | 1991-07-02 | Air Products And Chemicals, Inc. | Method of forming silicon dioxide glass films |
| US5219774A (en) * | 1988-05-17 | 1993-06-15 | Xicor, Inc. | Deposited tunneling oxide |
| IT1227245B (it) * | 1988-09-29 | 1991-03-27 | Sgs Thomson Microelectronics | Strato dielettrico di prima interconnessione per dispositivi elettronici a semiconduttore |
| JPH0697158A (ja) * | 1991-09-12 | 1994-04-08 | Semiconductor Energy Lab Co Ltd | 光気相反応方法 |
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| US5486267A (en) * | 1994-02-28 | 1996-01-23 | International Business Machines Corporation | Method for applying photoresist |
| US5491104A (en) * | 1994-09-30 | 1996-02-13 | Industrial Technology Research Institute | Method for fabricating DRAM cells having fin-type stacked storage capacitors |
| JP2822910B2 (ja) * | 1995-03-17 | 1998-11-11 | 日本電気株式会社 | 半導体装置の層間絶縁膜の形成方法 |
| US5869406A (en) * | 1995-09-28 | 1999-02-09 | Mosel Vitelic, Inc. | Method for forming insulating layers between polysilicon layers |
| KR100203134B1 (ko) * | 1996-06-27 | 1999-06-15 | 김영환 | 반도체 소자의 층간절연막 평탄화방법 |
| US5849644A (en) * | 1996-08-13 | 1998-12-15 | Micron Technology, Inc. | Semiconductor processing methods of chemical vapor depositing SiO2 on a substrate |
| JP3257624B2 (ja) * | 1996-11-15 | 2002-02-18 | キヤノン株式会社 | 半導体部材の製造方法 |
| US5952771A (en) * | 1997-01-07 | 1999-09-14 | Micron Technology, Inc. | Micropoint switch for use with field emission display and method for making same |
| US5933739A (en) * | 1997-09-11 | 1999-08-03 | Vlsi Technology, Inc. | Self-aligned silicidation structure and method of formation thereof |
| US6232234B1 (en) * | 1999-03-24 | 2001-05-15 | Applied Materials, Inc. | Method of reducing in film particle number in semiconductor manufacture |
| KR100297733B1 (ko) * | 1999-06-24 | 2001-09-22 | 윤종용 | 하부막질 의존성을 제거한 오존-ｔｅｏｓ 산화막 증착방법 및 다중 온도로 증착이 가능한 증착장치 |
| US6218315B1 (en) * | 2000-02-24 | 2001-04-17 | International Business Machines Corporation | HTO (high temperature oxide) deposition for capacitor dielectrics |
| US6281140B1 (en) * | 2000-06-12 | 2001-08-28 | Taiwan Semiconductor Manufacturing Company | Method of reducing the roughness of a gate insulator layer after exposure of the gate insulator layer to a threshold voltage implantation procedure |
| JP3916383B2 (ja) * | 2000-07-18 | 2007-05-16 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| US6511924B2 (en) * | 2001-04-20 | 2003-01-28 | Applied Materials, Inc. | Method of forming a silicon oxide layer on a substrate |
| US6858537B2 (en) * | 2001-09-11 | 2005-02-22 | Hrl Laboratories, Llc | Process for smoothing a rough surface on a substrate by dry etching |
| FR2835095B1 (fr) | 2002-01-22 | 2005-03-18 | Procede de preparation d'ensembles a semi-conducteurs separables, notamment pour former des substrats pour l'electronique, l'optoelectrique et l'optique | |
| KR100444492B1 (ko) * | 2002-05-16 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 제조 방법 |
| FR2888663B1 (fr) * | 2005-07-13 | 2008-04-18 | Soitec Silicon On Insulator | Procede de diminution de la rugosite d'une couche epaisse d'isolant |
-
2004
- 2004-09-16 EP EP04765971.9A patent/EP1789999B1/en active Active
- 2004-09-16 JP JP2007531606A patent/JP4796066B2/ja active Active
- 2004-09-16 CN CNB2004800440133A patent/CN100474529C/zh active Active
- 2004-09-16 WO PCT/EP2004/011616 patent/WO2006029651A1/en active Application Filing
-
2005
- 2005-09-15 TW TW094131751A patent/TWI298912B/zh active
-
2007
- 2007-02-22 US US11/677,696 patent/US7645486B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP4796066B2 (ja) | 2011-10-19 |
| WO2006029651A9 (en) | 2007-06-28 |
| TWI298912B (en) | 2008-07-11 |
| JP2008513600A (ja) | 2008-05-01 |
| EP1789999A1 (en) | 2007-05-30 |
| CN101023517A (zh) | 2007-08-22 |
| EP1789999B1 (en) | 2017-06-07 |
| US20070134887A1 (en) | 2007-06-14 |
| WO2006029651A1 (en) | 2006-03-23 |
| CN100474529C (zh) | 2009-04-01 |
| US7645486B2 (en) | 2010-01-12 |
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