DE60314634D1 - Titandioxid-beschichtungen hergestellt durch plasma-cvd bei atmosphärendruck - Google Patents

Titandioxid-beschichtungen hergestellt durch plasma-cvd bei atmosphärendruck

Info

Publication number
DE60314634D1
DE60314634D1 DE60314634T DE60314634T DE60314634D1 DE 60314634 D1 DE60314634 D1 DE 60314634D1 DE 60314634 T DE60314634 T DE 60314634T DE 60314634 T DE60314634 T DE 60314634T DE 60314634 D1 DE60314634 D1 DE 60314634D1
Authority
DE
Germany
Prior art keywords
atmospheric pressure
titanium dioxide
plasma cvd
coatings made
dioxide coatings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60314634T
Other languages
English (en)
Other versions
DE60314634T2 (de
Inventor
David William Sheel
Martyn Pemple
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Publication of DE60314634D1 publication Critical patent/DE60314634D1/de
Application granted granted Critical
Publication of DE60314634T2 publication Critical patent/DE60314634T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/4697—Generating plasma using glow discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Absorbent Articles And Supports Therefor (AREA)
  • Orthopedics, Nursing, And Contraception (AREA)
  • Materials For Medical Uses (AREA)
DE60314634T 2002-07-30 2003-07-30 Titandioxid-beschichtungen hergestellt durch plasma-cvd bei atmosphärendruck Expired - Lifetime DE60314634T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0217553.7A GB0217553D0 (en) 2002-07-30 2002-07-30 Titania coatings by CVD at atmospheric pressure
GB0217553 2002-07-30
PCT/EP2003/009314 WO2004013376A2 (en) 2002-07-30 2003-07-30 Titania coatings by plasma cvd at atmospheric pressure

Publications (2)

Publication Number Publication Date
DE60314634D1 true DE60314634D1 (de) 2007-08-09
DE60314634T2 DE60314634T2 (de) 2008-03-06

Family

ID=9941313

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60314634T Expired - Lifetime DE60314634T2 (de) 2002-07-30 2003-07-30 Titandioxid-beschichtungen hergestellt durch plasma-cvd bei atmosphärendruck

Country Status (11)

Country Link
US (1) US7597940B2 (de)
EP (1) EP1525336B1 (de)
JP (1) JP4417840B2 (de)
KR (1) KR101043792B1 (de)
CN (1) CN1675403B (de)
AT (1) ATE365816T1 (de)
AU (1) AU2003260448A1 (de)
DE (1) DE60314634T2 (de)
ES (1) ES2289331T3 (de)
GB (1) GB0217553D0 (de)
WO (1) WO2004013376A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007538159A (ja) * 2004-05-20 2007-12-27 ダウ グローバル テクノロジーズ インコーポレイティド 金属酸化物のプラズマ強化化学蒸着
EP1765740B1 (de) 2004-07-12 2007-11-07 Cardinal CG Company Wartungsarme beschichtungen
DE102004036063A1 (de) * 2004-07-24 2006-02-16 Krones Ag Vorrichtung und Verfahren zur Plasmabeschichtung/Sterilisation
US7323400B2 (en) * 2004-08-30 2008-01-29 Micron Technology, Inc. Plasma processing, deposition and ALD methods
FR2887872B1 (fr) * 2005-07-01 2008-09-05 Saint Gobain Procede et installation pour le traitement d'un substrat verrier chaud par un plasma a pression atmospherique
EP2013150B1 (de) 2006-04-11 2018-02-28 Cardinal CG Company Fotokatalytische beschichtungen mit verbesserten wartungsarmen eigenschaften
KR100772493B1 (ko) * 2006-05-24 2007-11-01 한국과학기술원 순환유동층 반응기에서 대기압 플라즈마 화학증착을 이용한미세입자의 타이타니아 박막 제조방법
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
FR2911130B1 (fr) * 2007-01-05 2009-11-27 Saint Gobain Procede de depot de couche mince et produit obtenu
WO2008147184A2 (en) * 2007-05-25 2008-12-04 Fujifilm Manufacturing Europe B.V. Atmospheric pressure glow discharge plasma method and system using heated substrate
DE102007025151A1 (de) * 2007-05-29 2008-09-04 Innovent E.V. Verfahren zum Beschichten eines Substrats
DE102007025152B4 (de) * 2007-05-29 2012-02-09 Innovent E.V. Verfahren zum Beschichten eines Substrats
EP2167703A4 (de) * 2007-06-15 2011-03-16 Nanogram Corp Reaktivstromabscheidung und synthese von anorganischen folien
DE102007043650A1 (de) * 2007-09-13 2009-04-02 Siemens Ag Verfahren zur Verbesserung der Eigenschaften von Beschichtungen
US7820309B2 (en) 2007-09-14 2010-10-26 Cardinal Cg Company Low-maintenance coatings, and methods for producing low-maintenance coatings
DE102008029681A1 (de) * 2008-06-23 2009-12-24 Plasma Treat Gmbh Verfahren und Vorrichtung zum Aufbringen einer Schicht, insbesondere einer selbstreinigend und/oder antimikrobiell wirkenden photokatalytischen Schicht, auf eine Oberfläche
EP2145978A1 (de) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage zum Auftragen von Schichten auf ein Substrat
EP2145979A1 (de) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage zum gleichzeitigen Auftragen von Schichten auf beide Seiten eines Substrats
JP6328882B2 (ja) * 2010-11-04 2018-05-23 日産化学工業株式会社 プラズマアニール方法及びその装置
FR2971519A1 (fr) * 2011-02-16 2012-08-17 Saint Gobain Procede d’obtention d’un materiau photocatalytique
CN104258835A (zh) * 2014-09-23 2015-01-07 江苏普瑞姆纳米科技有限公司 一种负载型二氧化钛光催化剂的制备方法
GB201523160D0 (en) * 2015-12-31 2016-02-17 Pilkington Group Ltd High strength glass containers
US10570056B2 (en) * 2016-09-01 2020-02-25 Khalifa University of Science and Technology Superhydrophilic and antifogging non-porous TiO2 films for glass and methods of providing the same
US10604442B2 (en) 2016-11-17 2020-03-31 Cardinal Cg Company Static-dissipative coating technology
KR102218446B1 (ko) * 2017-12-26 2021-02-22 주식회사 포스코 초저철손 방향성 전기강판 제조방법
DE102018202438B4 (de) * 2018-02-19 2022-11-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Verbinden eines Trägermaterials mit einem weiteren Material

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935073A (en) * 1981-11-27 1990-06-19 Sri International Process for applying coatings of zirconium and/or titantuim and a less noble metal to metal substrates and for converting the zirconium and/or titanium to an oxide, nitride, carbide, boride or silicide
EP0431951B1 (de) * 1989-12-07 1998-10-07 Research Development Corporation Of Japan Verfahren und Gerät zur Plasmabehandlung unter atmosphärischem Druck
DE4137606C1 (de) * 1991-11-15 1992-07-30 Schott Glaswerke, 6500 Mainz, De
US5156882A (en) * 1991-12-30 1992-10-20 General Electric Company Method of preparing UV absorbant and abrasion-resistant transparent plastic articles
US6251758B1 (en) * 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
JPH08253322A (ja) * 1995-03-10 1996-10-01 Res Dev Corp Of Japan 酸化チタン薄膜の製造方法
JPH09111460A (ja) * 1995-10-11 1997-04-28 Anelva Corp チタン系導電性薄膜の作製方法
JP3139369B2 (ja) * 1996-04-19 2001-02-26 日本電気株式会社 薄膜キャパシタの形成方法
US5993916A (en) * 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
GB9616983D0 (en) * 1996-08-13 1996-09-25 Pilkington Plc Method for depositing tin oxide and titanium oxide coatings on flat glass and the resulting coated glass
US7096692B2 (en) * 1997-03-14 2006-08-29 Ppg Industries Ohio, Inc. Visible-light-responsive photoactive coating, coated article, and method of making same
US5980983A (en) * 1997-04-17 1999-11-09 The President And Fellows Of Harvard University Liquid precursors for formation of metal oxides
US6110544A (en) * 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
US6015597A (en) * 1997-11-26 2000-01-18 3M Innovative Properties Company Method for coating diamond-like networks onto particles
US6432479B2 (en) * 1997-12-02 2002-08-13 Applied Materials, Inc. Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
US6294466B1 (en) * 1998-05-01 2001-09-25 Applied Materials, Inc. HDP-CVD apparatus and process for depositing titanium films for semiconductor devices
KR100326269B1 (ko) * 1998-12-24 2002-05-09 박종섭 반도체소자의고유전체캐패시터제조방법
JP2000313962A (ja) * 1999-04-26 2000-11-14 Sekisui Chem Co Ltd 放電プラズマを用いたＴｉＯ２薄膜の形成方法
US6338738B1 (en) * 1999-08-31 2002-01-15 Edwards Lifesciences Corp. Device and method for stabilizing cardiac tissue
JP3676983B2 (ja) * 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
KR100815038B1 (ko) * 2000-12-12 2008-03-18 코니카 미놀타 홀딩스 가부시키가이샤 박막 형성 방법, 박막을 갖는 물품, 광학 필름, 유전체피복 전극 및 플라즈마 방전 처리 장치
KR100390831B1 (ko) * 2000-12-18 2003-07-10 주식회사 하이닉스반도체 플라즈마 원자층 증착법에 의한 탄탈륨옥사이드 유전막형성 방법
JP2002322558A (ja) * 2001-04-25 2002-11-08 Konica Corp 薄膜形成方法、光学フィルム、偏光板及び画像表示装置
US6841006B2 (en) * 2001-08-23 2005-01-11 Applied Materials, Inc. Atmospheric substrate processing apparatus for depositing multiple layers on a substrate

Also Published As

Publication number Publication date
WO2004013376A3 (en) 2004-05-06
ATE365816T1 (de) 2007-07-15
JP4417840B2 (ja) 2010-02-17
AU2003260448A1 (en) 2004-02-23
KR20050030215A (ko) 2005-03-29
EP1525336B1 (de) 2007-06-27
US7597940B2 (en) 2009-10-06
DE60314634T2 (de) 2008-03-06
CN1675403A (zh) 2005-09-28
JP2006503686A (ja) 2006-02-02
ES2289331T3 (es) 2008-02-01
EP1525336A2 (de) 2005-04-27
US20060141290A1 (en) 2006-06-29
GB0217553D0 (en) 2002-09-11
KR101043792B1 (ko) 2011-06-27
WO2004013376A2 (en) 2004-02-12
CN1675403B (zh) 2010-12-08
AU2003260448A8 (en) 2004-02-23

Similar Documents

Publication Publication Date Title
DE60314634D1 (de) Titandioxid-beschichtungen hergestellt durch plasma-cvd bei atmosphärendruck
DE602006008190D1 (de) Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd
ATE458839T1 (de) Verfahren für leicht zu reinigende substrate und artikel daraus
TW200625443A (en) Film formation apparatus and method for semiconductor process
SG152183A1 (en) High quality silicon oxide films by remote plasma cvd from disilane precursors
AU2003273872A1 (en) Coated object
WO2008024566A3 (en) Overall defect reduction for pecvd films
WO2003065424A3 (en) Apparatus for cyclical deposition of thin films
ATE377580T1 (de) Wartungsarme beschichtungen
WO2006010451A3 (de) Vakuumbeschichtungsanlage und verfahren zur vakuumbeschichtung
EP1860690A3 (de) Verfahren zur Herstellung von Siliciumoxidfolien aus Organoaminosilanvorläufern
WO2004059707A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride film
TW200633056A (en) Improved deposition rate plasma enhanced chemical vapor process
EG26885A (en) A transparent glass substrate equipped with multilayer thin film included in glazing for protection from solar radiation
TW200511371A (en) A silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film
MX336541B (es) Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.
ATE319867T1 (de) Sperrbeschichtung
TW200732395A (en) High optical purity copolymer film
DK1845290T3 (da) Tætning i höjtryksanordninger
TW200719411A (en) Method of direct deposition of polycrystalline silicon
WO2009005862A3 (en) Novel methods for making and using halosilylgermanes
WO2008013665A3 (en) Methods and apparatus for the vaporization and delivery of solution precursors for atomic layer deposition
ATE327354T1 (de) Pecvd von siliciumdioxidfilmen von optischer qualität
EP3922750A3 (de) Verfahren zur ablagerung
EP4137617A4 (de) Siliciumeinkristallsubstrat zur dampfabscheidung, dampfabscheidungssubstrat und herstellungsverfahren dafür

Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN

8364 No opposition during term of opposition