CN113363134A - 沉积氧化硅薄膜的方法 - Google Patents
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 42
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Abstract
本申请提供一种沉积氧化硅薄膜的方法,包括:将表面形成有沟槽的基片放置于低压化学沉积机台的反应腔中;向所述反应腔中通入四乙氧基硅烷(TEOS)气体,维持所述反应腔内的温度为预定温度,并维持所述反应腔内的压力在400毫托(mtorr)以上,使所述四乙氧基硅烷(TEOS)气体分解从而在所述基片的表面沉积二氧化硅薄膜。
Description
技术领域
本申请涉及半导体制造领域,尤其涉及一种沉积氧化硅薄膜的方法。
背景技术
四乙氧基硅烷(TEOS)二氧化硅是一种使用四乙氧基硅烷(TEOS)材料,运用炉管低压化学气相沉积(LPCVD)方法制备的氧化硅薄膜,四乙氧基硅烷(TEOS)二氧化硅薄膜广泛应用于垂直双扩散金属氧化物半导体场效应晶体管(VDMOS),互补型金属氧化物半导体场效应晶体管(CMOS)等器件的制造工艺中。但随着技术的发展,越来越多的四乙氧基硅烷(TEOS)二氧化硅用于半导体晶圆级硅基传感器的制备。
此外,在传统工艺中,对深沟槽进行填充时,使用等离子增强化学气相沉积(PECVD)或者高密度等离子增强化学气相沉积(HDPCVD)等方法来形成氧化物薄膜。
应该注意,上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明,并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。
发明内容
本申请的发明人发现:一方面,在使用PECVD或HDPCVD等传统工艺对深沟槽进行填充时,由于沉积温度只有约400℃,沉积的氧化物薄膜比较疏松,密度较低,氧化物薄膜的质量低于采用低压化学沉积(LPCVD)机台在700℃条件下沉积的氧化硅薄膜的质量;另一方面,炉管低压化学气相沉积虽然可以沉积得到高质量的氧化硅薄膜,但是对沟槽的填充能力不足,空洞尺寸比例较大,导致产品稳定性出现异常,最终导致晶圆良率偏低,甚至晶圆废片,因此,难以使用炉管低压化学气相沉积的方法对深沟槽进行填充。发明人发现:如何能既提高氧化硅薄膜对深沟槽的填充能力又提高氧化硅薄膜的质量,成为一个问题。
本申请实施例提供一种沉积氧化硅薄膜的方法,在使用低压化学沉积机台在基片表面沉积四乙氧基硅烷(TEOS)二氧化硅的过程中,维持反应腔内的压力在400毫托(mtorr)以上,由此,能够大幅提高四乙氧基硅烷(TEOS)二氧化硅薄膜对于深沟槽的填充能力。由此,既能够制备高质量的二氧化硅薄膜,又能够提高二氧化硅薄膜对于深沟槽的填充能力。
根据本申请实施例的一个方面,提供一种沉积氧化硅薄膜的方法,包括:
将表面形成有沟槽的基片放置于低压化学沉积机台的反应腔中;
向所述反应腔中通入四乙氧基硅烷(TEOS)气体,维持所述反应腔内的温度为预定温度,并维持所述反应腔内的压力在400毫托(mtorr)以上,使所述四乙氧基硅烷(TEOS)气体分解从而在所述基片的表面沉积二氧化硅薄膜。
根据本申请实施例的另一个方面,其中,所述反应腔内的压力在800毫托(mtorr)以上。
根据本申请实施例的另一个方面,其中,所述预定温度为650℃~750℃。
根据本申请实施例的另一个方面,其中,所述四乙氧基硅烷(TEOS)气体的流量为20~1000标准立方厘米每分钟(sccm)。
根据本申请实施例的另一个方面,其中,还向所述反应腔中通入氧气(O2),氧气的流量为0~200标准立方厘米每分钟(sccm)。
根据本申请实施例的另一个方面,其中,还向所述反应腔中通入氮气(N2),氮气的流量为0~1000标准立方厘米每分钟(sccm)。
本申请的有益效果在于:在使用低压化学沉积机台在基片表面沉积四乙氧基硅烷(TEOS)二氧化硅的过程中,维持反应腔内的压力在400毫托(mtorr)以上,由此,既能够制备高质量的二氧化硅薄膜,又能够提高二氧化硅薄膜对于深沟槽的填充能力。
参照后文的说明和附图,详细公开了本申请的特定实施方式,指明了本申请的原理可以被采用的方式。应该理解,本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内,本申请的实施方式包括许多改变、修改和等同。
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用,与其它实施方式中的特征相组合,或替代其它实施方式中的特征。
应该强调,术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在,但并不排除一个或更多个其它特征、整件、步骤或组件的存在或附加。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解,其构成了说明书的一部分,用于例示本申请的实施方式,并与文字描述一起来阐释本申请的原理。显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。在附图中:
图1是本申请实施例1的沉积氧化硅薄膜的方的一个示意图;
图2是沉积压力为400毫托情况下的电子显微镜示意图;
图3是沉积压力为400毫托情况下的电子显微镜示意图。
具体实施方式
参照附图,通过下面的说明书,本申请的前述以及其它特征将变得明显。在说明书和附图中,具体公开了本申请的特定实施方式,其表明了其中可以采用本申请的原则的部分实施方式,应了解的是,本申请不限于所描述的实施方式,相反,本申请包括落入所附权利要求的范围内的全部修改、变型以及等同物。
实施例1
本申请实施例1提供一种球面结构的制作方法。该方法用于在表面形成有沟槽的基片表面沉积二氧化硅薄膜。
图1是本申请实施例1的沉积氧化硅薄膜的方法的一个示意图,该方法包括:
步骤101、将表面形成有沟槽的基片放置于低压化学沉积机台的反应腔中;
步骤102、向反应腔中通入四乙氧基硅烷(TEOS)气体,维持反应腔内的温度为预定温度,并维持反应腔内的压力在400毫托(mtorr)以上,使四乙氧基硅烷(TEOS)气体分解从而在基片的表面沉积二氧化硅薄膜。
根据本实施例,在使用低压化学沉积机台在基片表面沉积四乙氧基硅烷(TEOS)二氧化硅的过程中,维持反应腔内的压力在400毫托(mtorr)以上,由此,既能够制备高质量的二氧化硅薄膜,又能够提高二氧化硅薄膜对于深沟槽的填充能力。
本申请的发明人通过研究发现,在低压化学沉积(LPCVD)的方法中,通过调整反应腔内的压力,能够改变二氧化硅薄膜对于沟槽的填充能力,其中,反应腔内的压力在400毫托(mtorr)以上时,能够明显地提高二氧化硅薄膜对于沟槽的填充能力。此外,在一个优选的实施例中,反应腔内的压力例如可以在800毫托(mtorr)以上,例如1000毫托。
在本实施例中,基片可以是半导体制造领域中常用的衬底,例如硅晶圆、绝缘体上的硅(Silicon-On-Insulator,SOI)晶圆、锗硅晶圆、锗晶圆或氮化镓(Gallium Nitride,GaN)晶圆等,也可以是玻璃衬底、蓝宝石衬底等,本实施例不限于上述的举例。
在本实施例中,基片表面可以具有沟槽,该沟槽的深度例如可以是0.1~100微米,该沟槽的直径(或宽度)例如可以是0.01~5微米。此外,本申请对于沟槽的形成方式不做限定,例如,可以通过对基片表面的光刻胶进行曝光、显影等方式形成蚀刻掩模,然后利用干法刻蚀的方式刻蚀基片表面,从而形成沟槽。
在本实施例中,低压化学沉积(LPCVD)机台例如可以是炉管低压化学沉积机台,具体地,例如是TELα-8se LPCVD机台。
在本实施例中,在步骤102中,反应腔内的预定温度例如可以是650℃~750℃。
在本实施例中,在步骤102中,四乙氧基硅烷(TEOS)气体的流量为20~1000标准立方厘米每分钟(sccm),例如,150sccm。
在本实施例中,在步骤102中,还可以向反应腔中通入氧气(O2),氧气的流量为0~200标准立方厘米每分钟(sccm),例如,5sccm。
在本实施例中,在步骤102中,还可以向反应腔中通入氮气(N2),氮气的流量为0~1000标准立方厘米每分钟(sccm),例如,50sccm。
在本实施例中,在步骤102中,基片可以被承载在承载舟上,承载舟可以转动,从而使二氧化硅的厚度均匀,承载舟的转速可以是0~5圈每分钟(RPM),例如,1RPM。
此外,在步骤102中,氧化硅薄膜的沉积厚度例如是10nm~2000nm,具体的厚度随沉积的时间而定。
通过步骤102,能够在基片的表面形成四乙氧基硅烷(TEOS)二氧化硅薄膜,并且,该四乙氧基硅烷(TEOS)二氧化硅薄膜能够对于基片表面的沟槽具有良好的填充能力。
下面,根据一个具体实例,来说明本申请的沉积氧化硅薄膜的方法。
在该具体实例中,沉积氧化硅薄膜的方法包括如下步骤:
1)准备若干片已在表面刻蚀好特定图形的硅片作为基片,硅片的特定图形具有沟槽,沟槽深0.1~100微米,沟槽的宽度(即,直径)0.01~5微米,例如,沟槽深15微米,沟槽的宽度1.2微米均可;
2)按照正常工序,在低压化学沉积(LPCVD)机台(例如,TELα-8se LPCVD机台)的上货仓内进行基片上货,触发机台按钮开始生产,即,开始沉积氧化硅;
3)氧化硅沉积过程中,低压化学沉积(LPCVD)机台反应腔内的温度为650~750℃,例如700℃;沉积压力分别使用150,220,400,800mtorr共4种条件(沉积压力50~1000mtorr均可)分别针对不同的基片进行氧化硅的沉积;气体TEOS流量为20~1000sccm,例如150sccm;O2流量0~200sccm,例如,5sccm;N2流量为0~1000sccm,例如,50sccm;承载舟的转速0~5RPM,例如,1RPM;TEOS氧化硅沉积薄膜的厚度为10nm~2000nm,具体的厚度可以随沉积的时间而定。
4)将不同沉积压力条件下的基片取出切片,在电子显微镜下确认沟槽的填充效果;
5)经确认发现,沉积压力是影响氧化硅的沟槽填充能力的最重要因素,温度,气体,舟转速对沟槽填充效果影响较少。
图2是沉积压力为400毫托情况下的电子显微镜示意图,图3是沉积压力为400毫托情况下的电子显微镜示意图。如图2所示,在沉积了氧化硅21的情况下,空洞的直径尺寸(即,宽度)b和沟槽直径尺寸(即,宽度)c的比值被定义为空洞比例值,即b/c;沟槽的封口位置22相对于基片表面的图形上表面23(即,硅基水平面)的相对高度为a。在图2中,a为217纳米,b/c为18.99%。在图3中,a为-184,即,沟槽的封口位置22位于基片表面的图形上表面23的下方。此外,在图3中,b/c为16.63。在图2和图3中,白色矩形框所示的区域为沟槽封闭的区域附近。
下面的表1列出了沉积压力分别为150,220,400,800mtorr条件下的a,b,c和b/c的值。
根据表1可知,在本申请实施例中,沉积压力400mtorr以上时,氧化硅薄膜对沟槽填充有明显的改善效果,空洞比例从33.37%减少到18.99%以下。沉积800mtorr以上的沉积压力可以明显改善空洞封口位置,可以使封口位置从位于硅基水平面以上,改善至硅基水平面以下,即,a的取值成为负值。
以上结合具体的实施方式对本申请进行了描述,但本领域技术人员应该清楚,这些描述都是示例性的,并不是对本申请保护范围的限制。本领域技术人员可以根据本申请的精神和原理对本申请做出各种变型和修改,这些变型和修改也在本申请的范围内。
Claims (6)
1.一种沉积氧化硅薄膜的方法,包括:
将表面形成有沟槽的基片放置于低压化学沉积机台的反应腔中;
向所述反应腔中通入四乙氧基硅烷(TEOS)气体,维持所述反应腔内的温度为预定温度,并维持所述反应腔内的压力在400毫托(mtorr)以上,使所述四乙氧基硅烷(TEOS)气体分解从而在所述基片的表面沉积二氧化硅薄膜。
2.如权利要求1所述的方法,其中,
所述反应腔内的压力在800毫托(mtorr)以上。
3.如权利要求1所述的方法,其中,
所述预定温度为650℃~750℃。
4.如权利要求1所述的方法,其中,
所述四乙氧基硅烷(TEOS)气体的流量为20~1000标准立方厘米每分钟(sccm)。
5.如权利要求1所述的方法,其中,
还向所述反应腔中通入氧气(O2),氧气的流量为0~200标准立方厘米每分钟(sccm)。
6.如权利要求1所述的方法,其中,
还向所述反应腔中通入氮气(N2),氮气的流量为0~1000标准立方厘米每分钟(sccm)。
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