CN103855062A - 一种新型的用于晶圆二氧化硅背封膜生长过程的硅片承载装置和生长方法 - Google Patents
一种新型的用于晶圆二氧化硅背封膜生长过程的硅片承载装置和生长方法 Download PDFInfo
- Publication number
- CN103855062A CN103855062A CN201210506237.8A CN201210506237A CN103855062A CN 103855062 A CN103855062 A CN 103855062A CN 201210506237 A CN201210506237 A CN 201210506237A CN 103855062 A CN103855062 A CN 103855062A
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- China
- Prior art keywords
- silicon wafer
- silicon
- wafer carrying
- carrying device
- silicon dioxide
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210506237.8A CN103855062A (zh) | 2012-11-30 | 2012-11-30 | 一种新型的用于晶圆二氧化硅背封膜生长过程的硅片承载装置和生长方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210506237.8A CN103855062A (zh) | 2012-11-30 | 2012-11-30 | 一种新型的用于晶圆二氧化硅背封膜生长过程的硅片承载装置和生长方法 |
Publications (1)
Publication Number | Publication Date |
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CN103855062A true CN103855062A (zh) | 2014-06-11 |
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Family Applications (1)
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CN201210506237.8A Pending CN103855062A (zh) | 2012-11-30 | 2012-11-30 | 一种新型的用于晶圆二氧化硅背封膜生长过程的硅片承载装置和生长方法 |
Country Status (1)
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CN (1) | CN103855062A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363134A (zh) * | 2020-03-05 | 2021-09-07 | 上海新微技术研发中心有限公司 | 沉积氧化硅薄膜的方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63260017A (ja) * | 1987-04-16 | 1988-10-27 | Nec Corp | 半導体基板の支持ボ−ド |
CN1104264A (zh) * | 1994-09-02 | 1995-06-28 | 复旦大学 | 热壁密装低温低压淀积二氧化硅薄膜技术 |
CN101339901A (zh) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | 一种晶圆表面氧化膜去除工艺和装置 |
CN102064233A (zh) * | 2010-10-29 | 2011-05-18 | 常州亿晶光电科技有限公司 | 面接触式石英舟 |
CN102244142A (zh) * | 2011-06-24 | 2011-11-16 | 苏州凯西石英电子有限公司 | 一种太阳能电池生产用的石英舟及其插片与倒片方法 |
CN102522334A (zh) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | 采用高温氧化制程制备igbt用单晶硅晶圆背封材料的工艺 |
CN202977388U (zh) * | 2012-11-30 | 2013-06-05 | 有研半导体材料股份有限公司 | 一种新型的用于晶圆二氧化硅背封膜生长过程的硅片承载装置 |
-
2012
- 2012-11-30 CN CN201210506237.8A patent/CN103855062A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63260017A (ja) * | 1987-04-16 | 1988-10-27 | Nec Corp | 半導体基板の支持ボ−ド |
CN1104264A (zh) * | 1994-09-02 | 1995-06-28 | 复旦大学 | 热壁密装低温低压淀积二氧化硅薄膜技术 |
CN101339901A (zh) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | 一种晶圆表面氧化膜去除工艺和装置 |
CN102064233A (zh) * | 2010-10-29 | 2011-05-18 | 常州亿晶光电科技有限公司 | 面接触式石英舟 |
CN102244142A (zh) * | 2011-06-24 | 2011-11-16 | 苏州凯西石英电子有限公司 | 一种太阳能电池生产用的石英舟及其插片与倒片方法 |
CN102522334A (zh) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | 采用高温氧化制程制备igbt用单晶硅晶圆背封材料的工艺 |
CN202977388U (zh) * | 2012-11-30 | 2013-06-05 | 有研半导体材料股份有限公司 | 一种新型的用于晶圆二氧化硅背封膜生长过程的硅片承载装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363134A (zh) * | 2020-03-05 | 2021-09-07 | 上海新微技术研发中心有限公司 | 沉积氧化硅薄膜的方法 |
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C06 | Publication | ||
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C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: GRINM Semiconductor Materials Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: GRINM SEMICONDUCTOR MATERIALS CO., LTD. TO: GRINM ADVANCED MATERIALS CO., LTD. |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Applicant after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: YOUYAN NEW MATERIAL CO., LTD. |
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RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140611 |