TW200633022A - Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device - Google Patents
Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor deviceInfo
- Publication number
- TW200633022A TW200633022A TW095104007A TW95104007A TW200633022A TW 200633022 A TW200633022 A TW 200633022A TW 095104007 A TW095104007 A TW 095104007A TW 95104007 A TW95104007 A TW 95104007A TW 200633022 A TW200633022 A TW 200633022A
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- semiconductor substrate
- semiconductor device
- epitaxial
- epitaxial semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000005247 gettering Methods 0.000 abstract 2
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/00002—Operational features of endoscopes
- A61B1/00011—Operational features of endoscopes characterised by signal transmission
- A61B1/00016—Operational features of endoscopes characterised by signal transmission using wireless means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/00002—Operational features of endoscopes
- A61B1/00025—Operational features of endoscopes characterised by power management
- A61B1/00027—Operational features of endoscopes characterised by power management characterised by power supply
- A61B1/00032—Operational features of endoscopes characterised by power management characterised by power supply internally powered
- A61B1/00034—Operational features of endoscopes characterised by power management characterised by power supply internally powered rechargeable
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/005—Flexible endoscopes
- A61B1/0051—Flexible endoscopes with controlled bending of insertion part
- A61B1/0052—Constructional details of control elements, e.g. handles
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/005—Flexible endoscopes
- A61B1/01—Guiding arrangements therefore
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/042—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by a proximal camera, e.g. a CCD camera
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/06—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor with illuminating arrangements
- A61B1/0661—Endoscope light sources
- A61B1/0684—Endoscope light sources using light emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02535—Group 14 semiconducting materials including tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Surgery (AREA)
- Optics & Photonics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Radiology & Medical Imaging (AREA)
- Veterinary Medicine (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Animal Behavior & Ethology (AREA)
- Biophysics (AREA)
- Public Health (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050011459A KR100632463B1 (ko) | 2005-02-07 | 2005-02-07 | 에피택셜 반도체 기판의 제조 방법과 이를 이용한 이미지센서의 제조 방법, 에피택셜 반도체 기판 및 이를 이용한이미지 센서 |
US11/192,085 US7776723B2 (en) | 2005-02-07 | 2005-07-29 | Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200633022A true TW200633022A (en) | 2006-09-16 |
TWI316268B TWI316268B (en) | 2009-10-21 |
Family
ID=36779071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095104007A TWI316268B (en) | 2005-02-07 | 2006-02-07 | Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US7776723B2 (zh) |
KR (1) | KR100632463B1 (zh) |
CN (1) | CN1828836B (zh) |
TW (1) | TWI316268B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI489524B (zh) * | 2007-10-12 | 2015-06-21 | Tokyo Electron Ltd | 形成多晶矽膜之方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008053042A1 (en) * | 2006-11-02 | 2008-05-08 | Interuniversitair Microelektronica Centrum | Removal of impurities from semiconductor device layers |
KR100837280B1 (ko) * | 2007-03-12 | 2008-06-11 | 삼성전자주식회사 | 게터링 영역을 포함하는 반도체 소자 및 그 형성 방법 |
US8008166B2 (en) | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
JP5499455B2 (ja) * | 2007-10-22 | 2014-05-21 | 株式会社デンソー | SOI(Silicononinsulator)構造の半導体装置およびその製造方法 |
DE102008062040B4 (de) * | 2007-12-13 | 2015-06-03 | Sumco Corporation | Epitaxiewafer und Verfahren zu dessen Herstellung |
US20090189159A1 (en) * | 2008-01-28 | 2009-07-30 | Atmel Corporation | Gettering layer on substrate |
US8101508B2 (en) | 2008-03-05 | 2012-01-24 | Sumco Corporation | Silicon substrate and manufacturing method thereof |
US20090242939A1 (en) * | 2008-03-25 | 2009-10-01 | Sumco Corporation | Wafer for backside illumination type solid imaging device, production method thereof and backside illumination solid imaging device |
JP2009283533A (ja) * | 2008-05-20 | 2009-12-03 | Sumco Corp | 裏面照射型固体撮像素子用ウェーハ、その製造方法及び裏面照射型固体撮像素子 |
FR2933684B1 (fr) * | 2008-07-09 | 2011-05-06 | Commissariat Energie Atomique | Procede de purification d'un substrat en silicium cristallin et procede d'elaboration d'une cellule photovoltaique |
JP5347520B2 (ja) * | 2009-01-20 | 2013-11-20 | ソニー株式会社 | 固体撮像装置の製造方法 |
KR101544511B1 (ko) | 2009-04-21 | 2015-08-13 | 삼성전자주식회사 | 게터링 영역들을 갖는 이미지 센서의 제조 방법 |
WO2012102755A1 (en) * | 2011-01-28 | 2012-08-02 | Applied Materials, Inc. | Carbon addition for low resistivity in situ doped silicon epitaxy |
KR101224568B1 (ko) | 2012-01-13 | 2013-01-21 | 주식회사 엘지실트론 | 에피택셜 웨이퍼의 제조방법 |
KR101323001B1 (ko) * | 2012-02-29 | 2013-10-29 | 주식회사 엘지실트론 | 이미지 센서 및 이의 제조 방법 |
CN103035488A (zh) * | 2012-11-07 | 2013-04-10 | 上海华虹Nec电子有限公司 | 沟槽形半导体结构的形成方法 |
TWI541864B (zh) | 2012-12-06 | 2016-07-11 | 世創電子材料公司 | 磊晶晶圓及其製造方法 |
US10204803B2 (en) * | 2013-09-17 | 2019-02-12 | Deca Technologies Inc. | Two step method of rapid curing a semiconductor polymer layer |
JP6056772B2 (ja) * | 2014-01-07 | 2017-01-11 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
KR20150134543A (ko) * | 2014-05-22 | 2015-12-02 | 삼성전자주식회사 | 소자 제조용 기판 및 반도체 소자 |
JP2016009730A (ja) * | 2014-06-23 | 2016-01-18 | 株式会社東芝 | 半導体装置の製造方法 |
EP3113224B1 (en) * | 2015-06-12 | 2020-07-08 | Canon Kabushiki Kaisha | Imaging apparatus, method of manufacturing the same, and camera |
CN105679783B (zh) * | 2016-02-24 | 2019-05-03 | 上海华虹宏力半导体制造有限公司 | 图像传感器及其形成方法 |
CN106298457A (zh) * | 2016-09-22 | 2017-01-04 | 东莞市联洲知识产权运营管理有限公司 | 一种SiGe/Si外延片生长方法 |
CN106504978A (zh) * | 2016-10-17 | 2017-03-15 | 上海华力微电子有限公司 | 一种用于提高衬底金属捕获能力的cis硅片处理方法 |
CN107973269A (zh) * | 2017-12-18 | 2018-05-01 | 中国电子科技集团公司第四十六研究所 | 一种mems器件用多层结构硅片的制作方法 |
CN109192743A (zh) * | 2018-09-04 | 2019-01-11 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN109346489A (zh) * | 2018-09-20 | 2019-02-15 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
WO2022104074A1 (en) * | 2020-11-13 | 2022-05-19 | The Regents Of The University Of California | Epitaxy-enabled substrate transfer |
CN114156383B (zh) * | 2021-12-03 | 2024-06-21 | 扬州乾照光电有限公司 | 半导体器件及其制作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0237771A (ja) | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | Soi基板 |
JP3384506B2 (ja) | 1993-03-30 | 2003-03-10 | ソニー株式会社 | 半導体基板の製造方法 |
US6228453B1 (en) * | 1995-06-07 | 2001-05-08 | Lanxide Technology Company, Lp | Composite materials comprising two jonal functions and methods for making the same |
US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
JPH11204771A (ja) | 1998-01-07 | 1999-07-30 | Sony Corp | 半導体基板の製造方法及び固体撮像装置の製造方法 |
JPH11297976A (ja) | 1998-04-07 | 1999-10-29 | Sony Corp | エピタキシャル半導体基板およびその製造方法ならびに半導体装置の製造方法ならびに固体撮像装置の製造方法 |
KR100347141B1 (ko) | 2000-01-05 | 2002-08-03 | 주식회사 하이닉스반도체 | 에피택셜 실리콘 웨이퍼 제조 방법 |
WO2002052643A2 (en) * | 2000-12-27 | 2002-07-04 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
US6858480B2 (en) * | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP2002353434A (ja) | 2001-05-22 | 2002-12-06 | Sony Corp | 固体撮像装置の製造方法 |
JP2004165225A (ja) | 2002-11-08 | 2004-06-10 | Sony Corp | 半導体基板の製造方法、固体撮像装置の製造方法及び固体撮像装置用の選別方法 |
US7816236B2 (en) * | 2005-02-04 | 2010-10-19 | Asm America Inc. | Selective deposition of silicon-containing films |
-
2005
- 2005-02-07 KR KR1020050011459A patent/KR100632463B1/ko not_active IP Right Cessation
- 2005-07-29 US US11/192,085 patent/US7776723B2/en not_active Expired - Fee Related
-
2006
- 2006-02-07 TW TW095104007A patent/TWI316268B/zh not_active IP Right Cessation
- 2006-02-07 CN CN2006100067280A patent/CN1828836B/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI489524B (zh) * | 2007-10-12 | 2015-06-21 | Tokyo Electron Ltd | 形成多晶矽膜之方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI316268B (en) | 2009-10-21 |
US7776723B2 (en) | 2010-08-17 |
KR20060090516A (ko) | 2006-08-11 |
KR100632463B1 (ko) | 2006-10-11 |
CN1828836A (zh) | 2006-09-06 |
US20060175613A1 (en) | 2006-08-10 |
CN1828836B (zh) | 2011-04-20 |
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