TW200623276A - Method for forming self-aligned dual fully silicided gates in cmos devices - Google Patents
Method for forming self-aligned dual fully silicided gates in cmos devicesInfo
- Publication number
- TW200623276A TW200623276A TW094141589A TW94141589A TW200623276A TW 200623276 A TW200623276 A TW 200623276A TW 094141589 A TW094141589 A TW 094141589A TW 94141589 A TW94141589 A TW 94141589A TW 200623276 A TW200623276 A TW 200623276A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- type
- fully silicided
- source
- well region
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 230000009977 dual effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910021332 silicide Inorganic materials 0.000 abstract 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/904,885 US7122472B2 (en) | 2004-12-02 | 2004-12-02 | Method for forming self-aligned dual fully silicided gates in CMOS devices |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200623276A true TW200623276A (en) | 2006-07-01 |
Family
ID=36565726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094141589A TW200623276A (en) | 2004-12-02 | 2005-11-25 | Method for forming self-aligned dual fully silicided gates in cmos devices |
Country Status (7)
Country | Link |
---|---|
US (1) | US7122472B2 (zh) |
EP (1) | EP1831925A4 (zh) |
JP (1) | JP2008522443A (zh) |
KR (1) | KR20070085699A (zh) |
CN (1) | CN101069282B (zh) |
TW (1) | TW200623276A (zh) |
WO (1) | WO2006060574A2 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4791722B2 (ja) * | 2004-09-21 | 2011-10-12 | 株式会社東芝 | 半導体装置の製造方法 |
KR100719340B1 (ko) * | 2005-01-14 | 2007-05-17 | 삼성전자주식회사 | 듀얼 게이트 전극을 갖는 반도체 소자 및 그 형성 방법 |
FR2881575B1 (fr) * | 2005-01-28 | 2007-06-01 | St Microelectronics Crolles 2 | Transistor mos a grille totalement siliciuree |
US7148097B2 (en) * | 2005-03-07 | 2006-12-12 | Texas Instruments Incorporated | Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors |
JP2006294800A (ja) * | 2005-04-08 | 2006-10-26 | Toshiba Corp | 半導体装置の製造方法 |
US7151023B1 (en) * | 2005-08-01 | 2006-12-19 | International Business Machines Corporation | Metal gate MOSFET by full semiconductor metal alloy conversion |
KR100685904B1 (ko) * | 2005-10-04 | 2007-02-26 | 동부일렉트로닉스 주식회사 | 풀리 실리사이드 게이트 및 그것을 가진 반도체 소자의제조 방법 |
JP4287421B2 (ja) * | 2005-10-13 | 2009-07-01 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US20070123042A1 (en) * | 2005-11-28 | 2007-05-31 | International Business Machines Corporation | Methods to form heterogeneous silicides/germanides in cmos technology |
US7410854B2 (en) * | 2006-10-05 | 2008-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making FUSI gate and resulting structure |
US20080093682A1 (en) * | 2006-10-18 | 2008-04-24 | Liang-Gi Yao | Polysilicon levels for silicided structures including MOSFET gate electrodes and 3D devices |
US20080146012A1 (en) * | 2006-12-15 | 2008-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Novel method to adjust work function by plasma assisted metal incorporated dielectric |
KR100836763B1 (ko) * | 2006-12-28 | 2008-06-10 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
US20080206973A1 (en) * | 2007-02-26 | 2008-08-28 | Texas Instrument Inc. | Process method to optimize fully silicided gate (FUSI) thru PAI implant |
US7737015B2 (en) * | 2007-02-27 | 2010-06-15 | Texas Instruments Incorporated | Formation of fully silicided gate with oxide barrier on the source/drain silicide regions |
KR100860471B1 (ko) * | 2007-04-02 | 2008-09-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그의 제조방법 |
US20090053883A1 (en) * | 2007-08-24 | 2009-02-26 | Texas Instruments Incorporated | Method of setting a work function of a fully silicided semiconductor device, and related device |
US7749847B2 (en) * | 2008-02-14 | 2010-07-06 | International Business Machines Corporation | CMOS integration scheme employing a silicide electrode and a silicide-germanide alloy electrode |
US7749898B2 (en) * | 2008-06-24 | 2010-07-06 | Globalfoundries Inc. | Silicide interconnect structure |
US20100019327A1 (en) * | 2008-07-22 | 2010-01-28 | Eun Jong Shin | Semiconductor Device and Method of Fabricating the Same |
US9401431B2 (en) * | 2009-04-21 | 2016-07-26 | Cbrite Inc. | Double self-aligned metal oxide TFT |
US8378428B2 (en) * | 2010-09-29 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure of a semiconductor device |
US8779551B2 (en) * | 2012-06-06 | 2014-07-15 | International Business Machines Corporation | Gated diode structure for eliminating RIE damage from cap removal |
CN106486424B (zh) * | 2015-08-26 | 2019-11-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2980057B2 (ja) * | 1997-04-30 | 1999-11-22 | 日本電気株式会社 | 半導体装置の製造方法 |
US6090653A (en) * | 1998-03-30 | 2000-07-18 | Texas Instruments | Method of manufacturing CMOS transistors |
US6100173A (en) * | 1998-07-15 | 2000-08-08 | Advanced Micro Devices, Inc. | Forming a self-aligned silicide gate conductor to a greater thickness than junction silicide structures using a dual-salicidation process |
US6153485A (en) * | 1998-11-09 | 2000-11-28 | Chartered Semiconductor Manufacturing Ltd. | Salicide formation on narrow poly lines by pulling back of spacer |
US6277683B1 (en) * | 2000-02-28 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layer |
US6562718B1 (en) * | 2000-12-06 | 2003-05-13 | Advanced Micro Devices, Inc. | Process for forming fully silicided gates |
US6528402B2 (en) * | 2001-02-23 | 2003-03-04 | Vanguard International Semiconductor Corporation | Dual salicidation process |
US6524939B2 (en) * | 2001-02-23 | 2003-02-25 | Vanguard International Semiconductor Corporation | Dual salicidation process |
US6534405B1 (en) * | 2001-10-01 | 2003-03-18 | Taiwan Semiconductor Manufacturing Company | Method of forming a MOSFET device featuring a dual salicide process |
JP2005519468A (ja) * | 2002-02-28 | 2005-06-30 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 半導体デバイス中の異なるシリコン含有領域上に、異なるシリサイド部分を形成する方法 |
US6689676B1 (en) * | 2002-07-26 | 2004-02-10 | Motorola, Inc. | Method for forming a semiconductor device structure in a semiconductor layer |
US6589836B1 (en) * | 2002-10-03 | 2003-07-08 | Taiwan Semiconductor Manufacturing Company | One step dual salicide formation for ultra shallow junction applications |
JP4197607B2 (ja) * | 2002-11-06 | 2008-12-17 | 株式会社東芝 | 絶縁ゲート型電界効果トランジスタを含む半導体装置の製造方法 |
US6846734B2 (en) * | 2002-11-20 | 2005-01-25 | International Business Machines Corporation | Method and process to make multiple-threshold metal gates CMOS technology |
JP4209206B2 (ja) * | 2003-01-14 | 2009-01-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6905922B2 (en) * | 2003-10-03 | 2005-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual fully-silicided gate MOSFETs |
US7396767B2 (en) * | 2004-07-16 | 2008-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure including silicide regions and method of making same |
-
2004
- 2004-12-02 US US10/904,885 patent/US7122472B2/en not_active Expired - Fee Related
-
2005
- 2005-11-25 TW TW094141589A patent/TW200623276A/zh unknown
- 2005-12-01 WO PCT/US2005/043473 patent/WO2006060574A2/en active Application Filing
- 2005-12-01 CN CN2005800414218A patent/CN101069282B/zh not_active Expired - Fee Related
- 2005-12-01 JP JP2007544509A patent/JP2008522443A/ja active Pending
- 2005-12-01 KR KR1020077012543A patent/KR20070085699A/ko not_active Application Discontinuation
- 2005-12-01 EP EP05852637A patent/EP1831925A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN101069282A (zh) | 2007-11-07 |
EP1831925A2 (en) | 2007-09-12 |
JP2008522443A (ja) | 2008-06-26 |
US20060121663A1 (en) | 2006-06-08 |
CN101069282B (zh) | 2012-05-30 |
WO2006060574A2 (en) | 2006-06-08 |
US7122472B2 (en) | 2006-10-17 |
KR20070085699A (ko) | 2007-08-27 |
WO2006060574A3 (en) | 2006-07-20 |
EP1831925A4 (en) | 2009-06-24 |
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