TW200618322A - Thin-film photoelectric converter - Google Patents
Thin-film photoelectric converterInfo
- Publication number
- TW200618322A TW200618322A TW094114827A TW94114827A TW200618322A TW 200618322 A TW200618322 A TW 200618322A TW 094114827 A TW094114827 A TW 094114827A TW 94114827 A TW94114827 A TW 94114827A TW 200618322 A TW200618322 A TW 200618322A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor layer
- amorphous
- conductive film
- transparent conductive
- preferably composed
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004142305 | 2004-05-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200618322A true TW200618322A (en) | 2006-06-01 |
Family
ID=35320482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094114827A TW200618322A (en) | 2004-05-12 | 2005-05-09 | Thin-film photoelectric converter |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2005109526A1 (zh) |
TW (1) | TW200618322A (zh) |
WO (1) | WO2005109526A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI413267B (zh) * | 2009-01-30 | 2013-10-21 | Ulvac Inc | 光電轉換裝置之製造方法、光電轉換裝置、光電轉換裝置之製造系統、及光電轉換裝置製造系統之使用方法 |
TWI464890B (zh) * | 2008-05-30 | 2014-12-11 | Semiconductor Energy Lab | 光電轉換裝置和其製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4971755B2 (ja) * | 2006-11-14 | 2012-07-11 | 株式会社カネカ | 薄膜光電変換装置とその製造方法 |
US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
JP2009004702A (ja) * | 2007-06-25 | 2009-01-08 | Sharp Corp | 光電変換装置の製造方法 |
JP5406617B2 (ja) * | 2009-07-22 | 2014-02-05 | 株式会社カネカ | 薄膜光電変換装置およびその製造方法 |
JP2013084721A (ja) * | 2011-10-07 | 2013-05-09 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS632385A (ja) * | 1986-06-23 | 1988-01-07 | Hitachi Ltd | 多層構造p型シリコン膜および太陽電池 |
JPH034569A (ja) * | 1989-05-31 | 1991-01-10 | Tonen Corp | 非晶質太陽電池 |
JP3649948B2 (ja) * | 1991-04-08 | 2005-05-18 | 三洋電機株式会社 | 光起電力装置及びその製造方法 |
JPH05275725A (ja) * | 1992-03-26 | 1993-10-22 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
JP2550888B2 (ja) * | 1993-10-22 | 1996-11-06 | 株式会社日立製作所 | 太陽電池 |
JPH10200139A (ja) * | 1997-01-13 | 1998-07-31 | Mitsubishi Heavy Ind Ltd | 非晶質半導体太陽電池 |
JP2002134769A (ja) * | 2000-10-19 | 2002-05-10 | Mitsubishi Heavy Ind Ltd | 結晶系太陽電池及びその製造方法 |
JP2004087932A (ja) * | 2002-08-28 | 2004-03-18 | Mitsubishi Heavy Ind Ltd | 光起電力素子の製造方法及び光起電力素子 |
-
2005
- 2005-04-26 JP JP2006512957A patent/JPWO2005109526A1/ja active Pending
- 2005-04-26 WO PCT/JP2005/007872 patent/WO2005109526A1/ja active Application Filing
- 2005-05-09 TW TW094114827A patent/TW200618322A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI464890B (zh) * | 2008-05-30 | 2014-12-11 | Semiconductor Energy Lab | 光電轉換裝置和其製造方法 |
TWI413267B (zh) * | 2009-01-30 | 2013-10-21 | Ulvac Inc | 光電轉換裝置之製造方法、光電轉換裝置、光電轉換裝置之製造系統、及光電轉換裝置製造系統之使用方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005109526A1 (ja) | 2008-03-21 |
WO2005109526A1 (ja) | 2005-11-17 |
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