WO2009034858A1 - 集積化タンデム型薄膜シリコン太陽電池モジュール及びその製造方法 - Google Patents

集積化タンデム型薄膜シリコン太陽電池モジュール及びその製造方法 Download PDF

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Publication number
WO2009034858A1
WO2009034858A1 PCT/JP2008/065529 JP2008065529W WO2009034858A1 WO 2009034858 A1 WO2009034858 A1 WO 2009034858A1 JP 2008065529 W JP2008065529 W JP 2008065529W WO 2009034858 A1 WO2009034858 A1 WO 2009034858A1
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Prior art keywords
manufacturing
solar cell
thin film
type thin
cell module
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Application number
PCT/JP2008/065529
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English (en)
French (fr)
Inventor
Masayoshi Murata
Original Assignee
Masayoshi Murata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Masayoshi Murata filed Critical Masayoshi Murata
Priority to US12/733,573 priority Critical patent/US20110041889A1/en
Priority to EP08830437A priority patent/EP2200090A1/en
Priority to CN200880106201A priority patent/CN101803036A/zh
Publication of WO2009034858A1 publication Critical patent/WO2009034858A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　中間層を有する構造のタンデム型薄膜シリコン太陽電池モジュールにおいて問題となる該中間層を介した電流リークが抑制され、且つ、発電に寄与しない無効面積の拡大が抑制された高い光変換効率を有するタンデム型薄膜シリコン太陽電池のモジュール及びその製造方法を提供することを目的とする。 　中間層と接続溝の間に分離溝を設け、該分離溝は結晶質シリコン膜で埋め込まれるとともに、該分離溝と該接続溝の間には前記中間層の分離部材が存在しないという構造を有することを特徴とする。
PCT/JP2008/065529 2007-09-10 2008-08-29 集積化タンデム型薄膜シリコン太陽電池モジュール及びその製造方法 WO2009034858A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/733,573 US20110041889A1 (en) 2007-09-10 2008-08-29 Integrated tandem-type thin film solar cell module and method for manufacturing the same
EP08830437A EP2200090A1 (en) 2007-09-10 2008-08-29 Integrated tandem-type thin film silicon solar cell module and method for manufacturing the same
CN200880106201A CN101803036A (zh) 2007-09-10 2008-08-29 集成化串联型薄膜硅太阳能电池模块及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007233750A JP2009065076A (ja) 2007-09-10 2007-09-10 集積化タンデム型薄膜シリコン太陽電池モジュール及びその製造方法
JP2007-233750 2007-09-10

Publications (1)

Publication Number Publication Date
WO2009034858A1 true WO2009034858A1 (ja) 2009-03-19

Family

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PCT/JP2008/065529 WO2009034858A1 (ja) 2007-09-10 2008-08-29 集積化タンデム型薄膜シリコン太陽電池モジュール及びその製造方法

Country Status (5)

Country Link
US (1) US20110041889A1 (ja)
EP (1) EP2200090A1 (ja)
JP (1) JP2009065076A (ja)
CN (1) CN101803036A (ja)
WO (1) WO2009034858A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239281A (ja) * 2008-03-27 2009-10-15 Schott Solar Gmbh 光起電モジュールの酸化亜鉛製の前側電極層をパターン加工するための方法
CN101901853A (zh) * 2009-05-26 2010-12-01 韩国铁钢株式会社 集成薄膜太阳能电池及其制造方法
WO2015151422A1 (ja) * 2014-03-31 2015-10-08 国立研究開発法人科学技術振興機構 太陽電池および太陽電池の製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010278148A (ja) * 2009-05-27 2010-12-09 Mitsubishi Electric Corp 光起電力装置およびその製造方法
KR101667631B1 (ko) * 2009-12-18 2016-10-20 엘지디스플레이 주식회사 박막 태양전지 및 그의 제조 방법
JP5168428B2 (ja) * 2010-03-18 2013-03-21 富士電機株式会社 薄膜太陽電池の製造方法
TWI451580B (zh) * 2011-09-26 2014-09-01 Ind Tech Res Inst 薄膜太陽能電池之製法
CN102832287B (zh) * 2011-11-10 2015-11-25 郭磊 一种半导体直流光电变压器
US9391226B2 (en) 2011-11-10 2016-07-12 Lei Guo Semiconductor DC transformer
CN102427094B (zh) * 2011-11-10 2013-08-28 郭磊 一种半导体直流光电变压器
KR101332297B1 (ko) * 2011-11-24 2013-11-22 인텔렉추얼디스커버리 주식회사 탄뎀형 집적 광기전력 모듈 및 이의 제조방법
US9130102B2 (en) * 2012-05-22 2015-09-08 Intellectual Discovery Co., Ltd. Integrated thin film photovoltaic module and manufacturing method thereof
CN103617888B (zh) * 2013-11-14 2016-12-07 中国电子科技集团公司第四十一研究所 一种微波薄膜电容集成方法
CN104103703B (zh) * 2014-06-23 2016-06-01 深圳先进技术研究院 薄膜太阳能电池模组及其制备方法
CN104124288B (zh) * 2014-06-23 2016-11-02 深圳先进技术研究院 薄膜太阳能电池模组及其制备方法
CN106206950A (zh) * 2015-05-25 2016-12-07 松下电器产业株式会社 太阳能电池以及太阳能电池模块
CN105489678B (zh) * 2015-12-11 2017-03-22 奥特斯维能源（太仓）有限公司 一种优化光伏组件封装损失的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157484A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JP2003273383A (ja) * 2002-03-15 2003-09-26 Sharp Corp 太陽電池素子およびその製造方法
JP2006313872A (ja) * 2005-04-06 2006-11-16 Mitsubishi Heavy Ind Ltd 多接合薄膜太陽電池

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157484A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JP2003273383A (ja) * 2002-03-15 2003-09-26 Sharp Corp 太陽電池素子およびその製造方法
JP2006313872A (ja) * 2005-04-06 2006-11-16 Mitsubishi Heavy Ind Ltd 多接合薄膜太陽電池

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239281A (ja) * 2008-03-27 2009-10-15 Schott Solar Gmbh 光起電モジュールの酸化亜鉛製の前側電極層をパターン加工するための方法
CN101901853A (zh) * 2009-05-26 2010-12-01 韩国铁钢株式会社 集成薄膜太阳能电池及其制造方法
CN101901853B (zh) * 2009-05-26 2012-07-25 韩国铁钢株式会社 集成薄膜太阳能电池及其制造方法
WO2015151422A1 (ja) * 2014-03-31 2015-10-08 国立研究開発法人科学技術振興機構 太陽電池および太陽電池の製造方法
JPWO2015151422A1 (ja) * 2014-03-31 2017-04-13 国立研究開発法人科学技術振興機構 太陽電池および太陽電池の製造方法

Also Published As

Publication number Publication date
EP2200090A1 (en) 2010-06-23
JP2009065076A (ja) 2009-03-26
CN101803036A (zh) 2010-08-11
US20110041889A1 (en) 2011-02-24

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