CN104091843B - 一种背钝化太阳能电池及其制备方法 - Google Patents

一种背钝化太阳能电池及其制备方法 Download PDF

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CN104091843B
CN104091843B CN201410340213.9A CN201410340213A CN104091843B CN 104091843 B CN104091843 B CN 104091843B CN 201410340213 A CN201410340213 A CN 201410340213A CN 104091843 B CN104091843 B CN 104091843B
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王志刚
陆俊宇
汪燕玲
易辉
连维飞
魏青竹
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Suzhou Talesun Solar Technologies Co Ltd
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Abstract

本发明涉及一种背钝化太阳能电池及其制备方法,它包括硅衬底层、形成于硅衬底层上表面的发射极层、位于发射极层上表面的减反膜层、多个正面银电极、位于硅衬底层底面的背面钝化膜、覆盖于背面钝化膜底面的背面铝层、多个背面银电极、贯穿背面钝化膜和背面铝层的多个接触区,所述接触区的上表面与硅衬底层底面相接触,所述接触区为银质线段形状且排布成相互平行的多行,每行中的接触区相互平行且间隔分布,相邻行内的接触区交错分布,一方面能够节约银的耗量,另一方面减少了背面铝层与硅衬底的接触区面积,提高了电池光电转化效率。本发明背钝化太阳能电池的制备方法,相对于激光或腐蚀剂等工艺,减少了设备投入和工艺步骤。

Description

一种背钝化太阳能电池及其制备方法
技术领域
本发明属于光伏晶体硅太阳能电池领域,具体涉及一种背钝化太阳能电池及其制备方法。
背景技术
太阳能是人类取之不尽用之不竭的可再生能源,也是清洁能源,不产生任何的环境污染。在太阳能的有效利用当中,太阳能光电利用是近些年来发展最快、最具活力的研究领域。晶体硅太阳能电池主要是以半导体材料为基础,其工作原理是利用光电材料吸收光能后发生光电转换反应直接把光能转化成电能的装置。
光电转化效率和生产成本是制约晶体硅太阳能电池大规模使用的两个重要方面。影响光电转化效率的因素很多,均可归结为太阳光子的利用率和表面复合情况。提高太阳光的利用率可通过减少光的反射来实现:光线照射到电池正表面,一部分光在硅片表面被反射掉,另外的部分可投射进入硅片内部,为了充分利用太阳光,可在硅片表面形成绒面和增加减反射膜,以减少光线在硅片表面的反射损失。进入硅片内部的光子在传播过程中不断被吸收,但还是有相当一部分到达了硅片的基地及背表面,而这些地方的高复合速率是影响太阳能电池效率的主要因素。因此,被钝化的研究显得十分重要。钝化可分为表面钝化和体钝化,它能消除硅片表面和内部的缺陷,如悬挂键、杂质、断键等,通过钝化可以降低载流子复合,提高少子寿命,起到提高电池效率的作用。
目前背钝化电池背面金属化主要有两种方式:1、全部印刷银,印刷图形形成主栅和细栅,背面也可作为受光面发电,被称为双面电池;2、用激光或腐蚀剂作用在特定区域背面钝化膜上,去掉局部钝化膜,形成圆形孔或线性沟槽图形,然后印刷金属浆料烧结完成金属化,在圆孔或区沟槽域印刷的金属通常是铝,烧结过程中与硅衬底作用形成铝硅合金,成为背面金属与硅基衬底的导电通道。上述的两种金属化方式存在着不足之处:对于第一种方式,银属于贵金属,双面电池全部使用银,增加了银耗量,相应成本也增加,而且双面电池形成的背面电阻相对于单面电池更大;对于第二种方式,采用激光或腐蚀剂工艺的背钝化电池,则增加了设备投入和工艺步骤。
发明内容
本发明目的是为了克服现有技术的不足而提供一种不需要采用激光或腐蚀剂工艺、银耗量较小的背钝化太阳能电池。
为达到上述目的,本发明采用的技术方案是:一种背钝化太阳能电池,它包括硅衬底层、形成于硅衬底层上表面的发射极层、位于发射极层上表面的减反膜层、贯穿于减反膜层中且与发射极层上表面相接触的多个正面银电极、位于硅衬底层底面的背面钝化膜、覆盖于背面钝化膜底面的背面铝层、贯穿于背面钝化膜和背面铝层中且与硅衬底层底面相接触的多个背面银电极、贯穿背面钝化膜和背面铝层的多个接触区,所述接触区的上表面与硅衬底层底面相接触,所述接触区为银质线段形状且排布成相互平行的多行,每行中的接触区相互平行且间隔分布,相邻行内的接触区交错分布。
优化地,所述的背面钝化膜与硅衬底层间形成有背面场层,所述背面银电极与背面场层底面相接触,所述接触区的上表面与背面场层底面相接触。
进一步地,所述的接触区延伸方向与背面银电极延伸方向相平行。
进一步地,所述的接触区的长度为1~5毫米,宽度为20~80微米。
进一步地,所述背面钝化膜的成分为Al2O3、SiO2或SiNx
本发明还提供一种背钝化太阳能电池的制备方法,包括以下步骤:
(a)、在硅衬底层上表面形成绒面,并进行磷扩散形成发射极层;
(b)、在硅衬底层底面形成背面钝化膜;
(c)、在步骤(b)中所述背面钝化膜底面印刷背面银电极和线段状银质接触区,在背面钝化膜底面的其它区域印刷背面铝层;
(d)、在步骤(a)中所述发射极层的上表面印刷正面银电极,在发射极层上表面的其它区域形成减反膜层(3);
(e)、将经过步骤(d)处理后的硅衬底进行烧结使得银质接触区、背面银电极穿透背面钝化膜与硅衬底形成局域接触。
优化地,所述的磷扩散采用三氯氧磷进行。
由于上述技术方案运用,本发明与现有技术相比具有下列优点:本发明背钝化太阳能电池,通过在背面钝化膜和背面铝层内贯穿多个接触区,使得接触区的上表面与硅衬底层底面相接触,一方面接触区为银质线段形状且排布成相互平行的多行,能够节约银的耗量;另一方面每行中的接触区相互平行且间隔分布,相邻行内的接触区交错分布,使得接触区呈三角分布,具有更好的收集电流效果,减少了背面铝层与硅衬底的接触区面积,提高了电池光电转化效率。本发明背钝化太阳能电池的制备方法,相对于激光或腐蚀剂等工艺,减少了设备投入和工艺步骤,利于大规模生产。
附图说明
附图1为本发明背钝化太阳能电池的截面示意图;
附图2为本发明背钝化太阳能电池的背面示意图;
其中,1、硅衬底层;2、发射极层;3、减反膜层;4、正面银电极;5、背面钝化膜;6背面铝层;7、接触区;8、背面银电极;9、背面场层。
具体实施方式
下面将结合附图对本发明优选实施方案进行详细说明:
实施例1
本实施例提供一种背钝化太阳能电池,如图1和图2所示,主要包括硅衬底层1、发射极层2、减反膜层3、正面银电极4、背面钝化膜5和接触区7。
其中,发射极层2形成于硅衬底层1的上表面,其由三氯氧磷扩散形成,掺杂磷元素,可以极大地影响电池性能,通过提高发射极的掺杂浓度以降低电池的接触电阻;减反膜层3覆盖于发射极层2的上表面,用于减少太阳光的反射,提高光子的利用率;正面银电极4有多个,其贯穿于减反膜层3中并与发射极层2的上表面相接触;背面钝化膜5位于硅衬底层1的底面,由绝缘材料制成,优选为Al2O3、SiO2或SiNx;背面铝层6覆盖在背面钝化膜5的底面,用于汇集电流;背面银电极8也有多个,贯穿于背面钝化膜5和背面铝层6中并且与硅衬底层1的底面相接触;接触区7有若干个,贯穿背面钝化膜5和背面铝层6从而它的上表面与硅衬底层1的底面相接触,接触区7为银质线段形状且排布成相互平行的多行,每行中的接触区7相互平行且间隔分布,相邻行内的接触区7交错分布(即相邻行内的相邻接触区7交错分布成三角形)。这样一方面能够节约银的耗量,另一方面使得接触区7具有更好的收集电流效果,减少了背面铝层6与硅衬底层1的接触区面积,提高了电池光电转化效率。
在本实施例中,接触区7的延伸方向与背面银电极8延伸方向相平行,且接触区7的长度为0~0.5毫米,宽度为0~200微米;同一行中相邻接触区7中心的距离为0~3毫米,间距则为0~1毫米。
实施例2
本实施例提供一种背钝化太阳能电池,其结构与实施例1中背钝化太阳能电池的结构大致相同,不同的是背面钝化膜5与硅衬底层1间形成有背面场层9,其通过掺杂硼元素形成,这样背面银电极8与背面场层9底面相接触,接触区7的上表面与背面场层9底面相接触(如图1所示)。
实施例3
本实施例提供一种背钝化太阳能电池的制备方法,具体为:先在硅衬底层上表面形成绒面,并采用三氯氧磷在800~900℃下进行磷扩散形成发射极层;随后在硅衬底层底面采用等离子增强化学气相沉积(PECVD)或单原子层沉积(ALD)技术形成背面钝化膜,形成背面钝化膜能够提高太阳能电池的光电转化效率,钝化膜的厚度优选为17~26纳米,以便形成较好的背面接触,尽量降低由填充因子所带来的效率损失;接着在上述背面钝化膜底面印刷背面银电极和线段状银质接触区,在背面钝化膜底面的其它区域印刷背面铝层;同时、随后或者在这之前在发射极层的上表面印刷正面银电极,在发射极层上表面的其它区域形成减反膜层;最后将印刷完毕的硅衬底在700~1000℃下进行烧结使得银质接触区、背面银电极穿透背面钝化膜与硅衬底形成局域接触。由于在烧结过程中,银会穿透背面钝化膜(即钝化介质层)与硅衬底层形成接触,由实施例2中背钝化太阳能电池的结构可知,接触区的银为交错分布的线段,并能与硅衬底层形成接触导通收集电流;而背面金属层(即铝层)不能穿透钝化介质层,只起到连接银接触线段传导电流的作用。同时形成的背面银电极可作为汇集电流和组件串联的焊接位置。
本实施例中背钝化太阳能电池的制备方法,通过传统丝网印刷和烧结工艺形成交错分布的银接触区、铝层及银电极,相对于激光或腐蚀剂等工艺减少了设备投入和工艺步骤,对于P型或N型晶硅太阳能电池都适用;而且与背面印刷连续、平行银栅线的双面电池工艺相比,效率提升了0.05%以上,银耗量减少了2%;与背面采用激光(或腐蚀剂)工艺的背钝化电池相比效率虽然略微低了0.02%,但是减少了设备投入和工艺步骤,成本上更具优势。利用本方法制备的背钝化太阳能电池,形成交错分布的银线段接触区,节约了银耗量,减少了银线段接触区与硅衬底层的接触面积,减少了背表面的表面复合,提升了光电转化效率。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围,凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。

Claims (5)

1.一种背钝化太阳能电池,其特征在于:它包括硅衬底层(1)、形成于硅衬底层(1)上表面的发射极层(2)、位于发射极层(2)上表面的减反膜层(3)、贯穿于减反膜层(3)中且与发射极层(2)上表面相接触的多个正面银电极(4)、位于硅衬底层(1)底面的背面钝化膜(5)、覆盖于背面钝化膜(5)底面的背面铝层(6)、贯穿于背面钝化膜(5)和背面铝层(6)中且与硅衬底层(1)底面相接触的多个背面银电极(8)、贯穿背面钝化膜(5)和背面铝层(6)的多个接触区(7),所述接触区(7)的上表面与硅衬底层(1)底面相接触,所述接触区(7)为银质线段形状且排布成相互平行的多行,每行中的接触区(7)相互平行且间隔分布,相邻行内的接触区(7)交错分布;所述的背面钝化膜(5)与硅衬底层(1)间形成有背面场层(9),所述背面银电极(8)与背面场层(9)底面相接触,所述接触区(7)的上表面与背面场层(9)底面相接触;所述背面钝化膜(5)的成分为Al2O3、SiO2或SiNx
2.根据权利要求1所述的背钝化太阳能电池,其特征在于:所述的接触区(7)延伸方向与背面银电极(8)延伸方向相平行。
3.根据权利要求1所述的背钝化太阳能电池,其特征在于:所述的接触区(7)的长度为0~0.5毫米,宽度为0~200微米。
4.一种权利要求1所述背钝化太阳能电池的制备方法,其特征在于,包括以下步骤:
(a)、在硅衬底层上表面形成绒面,并进行磷扩散形成发射极层;
(b)、在硅衬底层底面通过掺杂硼元素形成背面场层,再在其表面形成背面钝化膜;
(c)、在步骤(b)中所述背面钝化膜底面印刷背面银电极和线段状银质接触区,在背面钝化膜底面的其它区域印刷背面铝层;
(d)、在步骤(a)中所述发射极层的上表面印刷正面银电极,在发射极层上表面的其它区域形成减反膜层(3);
(e)、将经过步骤(d)处理后的硅衬底进行烧结使得银质接触区、背面银电极穿透背面钝化膜与硅衬底形成局域接触。
5.根据权利要求4所述的背钝化太阳能电池制备方法,其特征在于:所述的磷扩散采用三氯氧磷进行。
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