TW200617193A - Sputtering Targets, sputtering target backing plate assembly and film deposition system - Google Patents

Sputtering Targets, sputtering target backing plate assembly and film deposition system

Info

Publication number
TW200617193A
TW200617193A TW094138344A TW94138344A TW200617193A TW 200617193 A TW200617193 A TW 200617193A TW 094138344 A TW094138344 A TW 094138344A TW 94138344 A TW94138344 A TW 94138344A TW 200617193 A TW200617193 A TW 200617193A
Authority
TW
Taiwan
Prior art keywords
sputtering
target
backing plate
plate assembly
film deposition
Prior art date
Application number
TW094138344A
Other languages
English (en)
Other versions
TWI308597B (en
Inventor
Hirohito Miyashita
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of TW200617193A publication Critical patent/TW200617193A/zh
Application granted granted Critical
Publication of TWI308597B publication Critical patent/TWI308597B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094138344A 2004-11-17 2005-11-02 Sputtering target, sputtering target backing plate assembly and film deposition system TWI308597B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004332532 2004-11-17

Publications (2)

Publication Number Publication Date
TW200617193A true TW200617193A (en) 2006-06-01
TWI308597B TWI308597B (en) 2009-04-11

Family

ID=36406955

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138344A TWI308597B (en) 2004-11-17 2005-11-02 Sputtering target, sputtering target backing plate assembly and film deposition system

Country Status (8)

Country Link
US (1) US9685307B2 (zh)
EP (2) EP1813693B1 (zh)
JP (1) JP4629051B2 (zh)
KR (1) KR100876573B1 (zh)
CN (3) CN102230158B (zh)
DE (1) DE602005021535D1 (zh)
TW (1) TWI308597B (zh)
WO (1) WO2006054409A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695076B (zh) * 2015-05-21 2020-06-01 日商Ｊｘ金屬股份有限公司 濺鍍靶
TWI832292B (zh) * 2022-06-17 2024-02-11 南臺學校財團法人南臺科技大學 簇式多孔隙金屬氧化物的製造方法

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CN100396812C (zh) * 2001-12-19 2008-06-25 日矿金属株式会社 连接磁性靶和背衬板的方法以及磁性靶
CN101479400B (zh) * 2006-06-29 2011-06-22 Jx日矿日石金属株式会社 溅射靶/背衬板接合体
US9677170B2 (en) * 2007-02-09 2017-06-13 Jx Nippon Mining & Metals Corporation Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same
JP2009144186A (ja) * 2007-12-12 2009-07-02 Takeuchi Kogyo:Kk スパッタリング用ターゲット部材およびその製造法
JP5676429B2 (ja) 2008-04-21 2015-02-25 ハネウェル・インターナショナル・インコーポレーテッド Ｄｃマグネトロンスパッタリングシステムの設計および使用
KR20140129250A (ko) 2009-11-20 2014-11-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃-백킹 플레이트 접합체 및 그 제조 방법
WO2011078148A1 (ja) 2009-12-24 2011-06-30 Jx日鉱日石金属株式会社 ガドリニウム製スパッタリングターゲット及び同ターゲットの製造方法
US8992747B2 (en) * 2010-03-12 2015-03-31 Applied Materials, Inc. Apparatus and method for improved darkspace gap design in RF sputtering chamber
US10006117B2 (en) 2010-10-27 2018-06-26 Jx Nippon Mining & Metals Corporation Sputtering target-backing plate assembly and method for producing same
KR101627012B1 (ko) * 2011-01-26 2016-06-03 제이엑스금속주식회사 스퍼터링 타깃
JPWO2013047199A1 (ja) 2011-09-30 2015-03-26 Jx日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法
US8685214B1 (en) 2011-09-30 2014-04-01 WD Media, LLC Magnetic shunting pads for optimizing target erosion in sputtering processes
CN105008582A (zh) * 2013-01-04 2015-10-28 东曹Smd有限公司 具有增强的表面轮廓和改善的性能的硅溅射靶及其制造方法
US9761420B2 (en) * 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
CN106536787B (zh) 2014-07-31 2019-02-22 捷客斯金属株式会社 将防腐蚀性金属与Mo或Mo合金扩散接合而得到的背衬板、以及具备该背衬板的溅射靶-背衬板组件
JP6498527B2 (ja) * 2015-05-21 2019-04-10 Ｊｘ金属株式会社 スパッタリングターゲット
CN108779554B (zh) 2016-03-09 2020-12-01 捷客斯金属株式会社 能够使点燃稳定的溅射靶
JP6271798B2 (ja) * 2016-07-13 2018-01-31 住友化学株式会社 スパッタリングターゲットの製造方法
JP6764335B2 (ja) * 2016-12-26 2020-09-30 三菱マテリアル電子化成株式会社 シリコンターゲット材
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
US11424111B2 (en) * 2020-06-25 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited Sputtering target assembly to prevent overetch of backing plate and methods of using the same
CN112663015B (zh) * 2020-12-14 2022-10-14 上海超导科技股份有限公司 靶材凹坑测试装置及其反馈控制走靶方法

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JPH0715144B2 (ja) 1985-08-08 1995-02-22 松下電器産業株式会社 スパツタリングタ−ゲツト材
DE3912381A1 (de) * 1988-04-15 1989-10-26 Sharp Kk Auffaengereinheit
DE59009549D1 (de) * 1989-06-05 1995-09-28 Balzers Hochvakuum Verfahren zum Kühlen von Targets sowie Kühleinrichtung für Targets.
WO1992004482A1 (en) * 1990-08-30 1992-03-19 Materials Research Corporation Pretextured cathode sputtering target and method of preparation thereof and sputtering therewith
KR100231397B1 (ko) * 1991-01-28 1999-11-15 튜그룰 야사르 음극 스퍼터링용 타겟
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JPH06140330A (ja) * 1992-10-05 1994-05-20 Nippon Steel Corp スパッタリング装置
JPH11193457A (ja) * 1997-12-26 1999-07-21 Japan Energy Corp 磁性体スパッタリングターゲット
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
DE19819933A1 (de) * 1998-05-05 1999-11-11 Leybold Systems Gmbh Target für eine Kathodenzerstäubungsvorrichtung zur Herstellung dünner Schichten
US6086735A (en) * 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
JP2001011617A (ja) * 1999-07-01 2001-01-16 Nikko Materials Co Ltd スパッタリングターゲット
EP1087033A1 (en) * 1999-09-23 2001-03-28 Praxair Technology, Inc. Extended life sputter targets
US6497797B1 (en) * 2000-08-21 2002-12-24 Honeywell International Inc. Methods of forming sputtering targets, and sputtering targets formed thereby
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP3905295B2 (ja) * 2000-10-02 2007-04-18 日鉱金属株式会社 高純度コバルトターゲットと銅合金製バッキングプレートとの拡散接合ターゲット組立体及びその製造方法
JP3905301B2 (ja) * 2000-10-31 2007-04-18 日鉱金属株式会社 タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法
WO2002040733A1 (fr) * 2000-11-17 2002-05-23 Nikko Materials Company, Limited Cible de pulverisation produisant peu de particules, plaque support ou appareil de pulverisation, et procede de pulverisation produisant peu de particules
EP1341948A1 (de) * 2000-11-27 2003-09-10 Unaxis Trading AG Target mit dickenprofilierung für rf magnetron
US6599405B2 (en) * 2001-05-30 2003-07-29 Praxair S.T. Technology, Inc. Recessed sputter target
US6638402B2 (en) * 2001-06-05 2003-10-28 Praxair S.T. Technology, Inc. Ring-type sputtering target
JP2003027225A (ja) * 2001-07-13 2003-01-29 Canon Inc スパッタリングターゲットおよびスパッタリング装置
CN100396812C (zh) * 2001-12-19 2008-06-25 日矿金属株式会社 连接磁性靶和背衬板的方法以及磁性靶
US20030178301A1 (en) * 2001-12-21 2003-09-25 Lynn David Mark Planar magnetron targets having target material affixed to non-planar backing plates
JP4007010B2 (ja) * 2002-02-04 2007-11-14 ヤマハ株式会社 スパッタリングターゲット
US20040009087A1 (en) * 2002-07-10 2004-01-15 Wuwen Yi Physical vapor deposition targets, and methods of forming physical vapor deposition targets
JP2004084007A (ja) 2002-08-27 2004-03-18 Nec Kyushu Ltd スパッタ装置
US6811657B2 (en) * 2003-01-27 2004-11-02 Micron Technology, Inc. Device for measuring the profile of a metal film sputter deposition target, and system and method employing same
US6702930B1 (en) * 2003-05-08 2004-03-09 Seagate Technology Llc Method and means for enhancing utilization of sputtering targets
KR20060033013A (ko) * 2003-07-14 2006-04-18 토소우 에스엠디, 인크 저 전도 백킹 플레이트를 갖는 스퍼터링 타겟 조립체 및 그제조 방법
WO2005064036A1 (ja) * 2003-12-25 2005-07-14 Nikko Materials Co., Ltd. 銅又は銅合金ターゲット/銅合金バッキングプレート組立体
CN1910304A (zh) * 2004-02-03 2007-02-07 霍尼韦尔国际公司 物理气相沉积靶构造
CN101479400B (zh) * 2006-06-29 2011-06-22 Jx日矿日石金属株式会社 溅射靶/背衬板接合体
US9677170B2 (en) * 2007-02-09 2017-06-13 Jx Nippon Mining & Metals Corporation Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695076B (zh) * 2015-05-21 2020-06-01 日商Ｊｘ金屬股份有限公司 濺鍍靶
TWI832292B (zh) * 2022-06-17 2024-02-11 南臺學校財團法人南臺科技大學 簇式多孔隙金屬氧化物的製造方法

Also Published As

Publication number Publication date
JPWO2006054409A1 (ja) 2008-08-07
KR100876573B1 (ko) 2008-12-31
CN102230158B (zh) 2014-04-30
KR20070063600A (ko) 2007-06-19
US9685307B2 (en) 2017-06-20
CN102230158A (zh) 2011-11-02
TWI308597B (en) 2009-04-11
US20080116066A1 (en) 2008-05-22
JP4629051B2 (ja) 2011-02-09
EP2236644A2 (en) 2010-10-06
EP1813693A4 (en) 2008-09-24
EP1813693A1 (en) 2007-08-01
DE602005021535D1 (de) 2010-07-08
CN102061450A (zh) 2011-05-18
EP1813693B1 (en) 2010-05-26
CN101065511A (zh) 2007-10-31
WO2006054409A1 (ja) 2006-05-26
EP2236644A3 (en) 2012-01-04

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