ATE520143T1 - Sputter-target mit langsamsputter-schicht unter targetmaterial - Google Patents
Sputter-target mit langsamsputter-schicht unter targetmaterialInfo
- Publication number
- ATE520143T1 ATE520143T1 AT06785376T AT06785376T ATE520143T1 AT E520143 T1 ATE520143 T1 AT E520143T1 AT 06785376 T AT06785376 T AT 06785376T AT 06785376 T AT06785376 T AT 06785376T AT E520143 T1 ATE520143 T1 AT E520143T1
- Authority
- AT
- Austria
- Prior art keywords
- target
- sputter
- slow
- sputtering
- layer under
- Prior art date
Links
- 239000013077 target material Substances 0.000 title abstract 4
- 239000000463 material Substances 0.000 abstract 5
- 238000004544 sputter deposition Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005477 sputtering target Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/158,407 US20060289304A1 (en) | 2005-06-22 | 2005-06-22 | Sputtering target with slow-sputter layer under target material |
PCT/US2006/024371 WO2007002330A1 (en) | 2005-06-22 | 2006-06-21 | Sputtering target with slow-sputter layer under target material |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE520143T1 true ATE520143T1 (de) | 2011-08-15 |
Family
ID=37311923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06785376T ATE520143T1 (de) | 2005-06-22 | 2006-06-21 | Sputter-target mit langsamsputter-schicht unter targetmaterial |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060289304A1 (de) |
EP (1) | EP1913624B1 (de) |
AT (1) | ATE520143T1 (de) |
CA (1) | CA2611345A1 (de) |
ES (1) | ES2370259T3 (de) |
PL (1) | PL1913624T3 (de) |
WO (1) | WO2007002330A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0713450D0 (en) * | 2007-07-12 | 2007-08-22 | Materia Nova | Magnetron co-sputtering device |
GB2461094B (en) * | 2008-06-20 | 2012-08-22 | Mantis Deposition Ltd | Deposition of materials |
US20100025229A1 (en) * | 2008-07-30 | 2010-02-04 | Guardian Industries Corp. | Apparatus and method for sputtering target debris reduction |
TWI641292B (zh) | 2008-08-04 | 2018-11-11 | Agc北美平面玻璃公司 | 電漿源 |
US20100044222A1 (en) * | 2008-08-21 | 2010-02-25 | Guardian Industries Corp., | Sputtering target including magnetic field uniformity enhancing sputtering target backing tube |
DE102010038796B4 (de) * | 2010-08-02 | 2014-02-20 | Von Ardenne Anlagentechnik Gmbh | Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung |
JP6037734B2 (ja) * | 2012-09-07 | 2016-12-07 | 三菱重工工作機械株式会社 | 常温接合装置および常温接合方法 |
KR102177208B1 (ko) * | 2013-07-25 | 2020-11-11 | 삼성디스플레이 주식회사 | 스퍼터링 시스템과, 이를 이용한 디스플레이 장치의 제조 방법 |
KR102272311B1 (ko) | 2014-12-05 | 2021-07-06 | 에이쥐씨 글래스 유럽 | 중공형 음극 플라즈마 소스 |
US10755901B2 (en) | 2014-12-05 | 2020-08-25 | Agc Flat Glass North America, Inc. | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
CN113001114B (zh) * | 2021-03-01 | 2023-12-29 | 宁波江丰电子材料股份有限公司 | 一种旋转靶材溅射面的车削方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2933835A1 (de) * | 1979-08-21 | 1981-03-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum befestigen von in scheiben- oder plattenform vorliegenden targetmaterialien auf kuehlteller fuer aufstaeubanlagen |
US4356073A (en) * | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
US5427665A (en) * | 1990-07-11 | 1995-06-27 | Leybold Aktiengesellschaft | Process and apparatus for reactive coating of a substrate |
EP0543931A4 (en) * | 1990-08-10 | 1993-09-08 | Viratec Thin Films, Inc. | Shielding for arc suppression in rotating magnetron sputtering systems |
US5364518A (en) * | 1991-05-28 | 1994-11-15 | Leybold Aktiengesellschaft | Magnetron cathode for a rotating target |
JPH0586462A (ja) * | 1991-06-28 | 1993-04-06 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
WO1997008359A1 (fr) * | 1995-08-23 | 1997-03-06 | Asahi Glass Company Ltd. | Cible, son procede de production et procede de formation d'une couche tres refringente |
JPH1129858A (ja) * | 1997-07-14 | 1999-02-02 | Mitsubishi Chem Corp | スパッタリングターゲット |
DE60023176T2 (de) * | 1999-12-03 | 2006-06-14 | Bekaert Sa Nv | Sputtertarget und verfahren zur herstellung eines solchen targets |
KR20030024868A (ko) * | 2000-08-17 | 2003-03-26 | 토소우 에스엠디, 인크 | 수명-종료-표시를 갖는 고순도 스퍼터 타켓과 이의 제조방법 |
WO2002020866A1 (fr) * | 2000-09-08 | 2002-03-14 | Asahi Glass Company, Limited | Cible cylindrique et procede de fabrication de ladite cible |
AU9304201A (en) | 2000-09-25 | 2002-04-08 | Cardinal Cg Co | Improved sputtering target and methods of making and using same |
US20040115362A1 (en) * | 2002-01-14 | 2004-06-17 | Klause Hartig | Photocatalytic sputtering targets and methods for the production and use thereof |
US20040074770A1 (en) * | 2002-07-02 | 2004-04-22 | George Wityak | Rotary target |
AU2003284294A1 (en) * | 2002-10-21 | 2004-05-13 | Cabot Corporation | Method of forming a sputtering target assembly and assembly made therefrom |
US7014741B2 (en) * | 2003-02-21 | 2006-03-21 | Von Ardenne Anlagentechnik Gmbh | Cylindrical magnetron with self cleaning target |
US20050051422A1 (en) * | 2003-02-21 | 2005-03-10 | Rietzel James G. | Cylindrical magnetron with self cleaning target |
-
2005
- 2005-06-22 US US11/158,407 patent/US20060289304A1/en not_active Abandoned
-
2006
- 2006-06-21 CA CA002611345A patent/CA2611345A1/en not_active Abandoned
- 2006-06-21 AT AT06785376T patent/ATE520143T1/de not_active IP Right Cessation
- 2006-06-21 EP EP06785376A patent/EP1913624B1/de not_active Not-in-force
- 2006-06-21 ES ES06785376T patent/ES2370259T3/es active Active
- 2006-06-21 PL PL06785376T patent/PL1913624T3/pl unknown
- 2006-06-21 WO PCT/US2006/024371 patent/WO2007002330A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1913624B1 (de) | 2011-08-10 |
PL1913624T3 (pl) | 2012-01-31 |
EP1913624A1 (de) | 2008-04-23 |
US20060289304A1 (en) | 2006-12-28 |
CA2611345A1 (en) | 2007-01-04 |
WO2007002330A1 (en) | 2007-01-04 |
ES2370259T3 (es) | 2011-12-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |