TW200615393A - Raw material liquid for metal organic chemical vapor deposition and method of producing hf-si containing complex oxide film using the raw material liquid - Google Patents

Raw material liquid for metal organic chemical vapor deposition and method of producing hf-si containing complex oxide film using the raw material liquid

Info

Publication number
TW200615393A
TW200615393A TW094130173A TW94130173A TW200615393A TW 200615393 A TW200615393 A TW 200615393A TW 094130173 A TW094130173 A TW 094130173A TW 94130173 A TW94130173 A TW 94130173A TW 200615393 A TW200615393 A TW 200615393A
Authority
TW
Taiwan
Prior art keywords
raw material
material liquid
organic
compound
producing
Prior art date
Application number
TW094130173A
Other languages
English (en)
Inventor
Atsushi Itsuki
Akio Yanagisawa
Nobuyuki Soyama
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005250945A external-priority patent/JP2006100812A/ja
Priority claimed from JP2005250917A external-priority patent/JP4363383B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of TW200615393A publication Critical patent/TW200615393A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW094130173A 2004-09-02 2005-09-02 Raw material liquid for metal organic chemical vapor deposition and method of producing hf-si containing complex oxide film using the raw material liquid TW200615393A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004255097 2004-09-02
JP2004255098 2004-09-02
JP2005250945A JP2006100812A (ja) 2004-09-02 2005-08-31 有機金属化学気相成長法用原料液及び該原料液を用いたＨｆ−Ｓｉ含有複合酸化物膜の製造方法
JP2005250917A JP4363383B2 (ja) 2004-09-02 2005-08-31 有機金属化学気相成長法用原料液及び該原料液を用いたＨｆ−Ｓｉ含有複合酸化物膜の製造方法

Publications (1)

Publication Number Publication Date
TW200615393A true TW200615393A (en) 2006-05-16

Family

ID=36000161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130173A TW200615393A (en) 2004-09-02 2005-09-02 Raw material liquid for metal organic chemical vapor deposition and method of producing hf-si containing complex oxide film using the raw material liquid

Country Status (4)

Country Link
US (1) US20080299312A1 (zh)
KR (1) KR20070051309A (zh)
TW (1) TW200615393A (zh)
WO (1) WO2006025515A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081337B2 (en) * 2017-03-15 2021-08-03 Versum Materials U.S., LLC Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
US11631580B2 (en) 2017-03-15 2023-04-18 Versum Materials Us, Llc Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
US11193206B2 (en) * 2017-03-15 2021-12-07 Versum Materials Us, Llc Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
KR102643460B1 (ko) * 2021-03-31 2024-03-05 오션브릿지 주식회사 박막 성장 억제용 화합물 및 이를 이용한 박막 형성방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002053960A (ja) * 2000-08-04 2002-02-19 Kojundo Chem Lab Co Ltd ジルコニウムおよびハフニウムシリケート膜形成用ｃｖｄ原料組成物とその製法ならびにそれを用いたシリケート膜の製法
JP3409290B2 (ja) * 2000-09-18 2003-05-26 株式会社トリケミカル研究所 ゲート酸化膜形成材料
US6486080B2 (en) * 2000-11-30 2002-11-26 Chartered Semiconductor Manufacturing Ltd. Method to form zirconium oxide and hafnium oxide for high dielectric constant materials
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
JP2003124460A (ja) * 2001-10-15 2003-04-25 Atsushi Ogura ゲート酸化膜、素子、ゲート酸化膜形成方法、ゲート酸化膜形成材料
JP3698163B1 (ja) * 2003-09-19 2005-09-21 三菱マテリアル株式会社 ハフニウム含有膜形成材料及び該材料から作製されたハフニウム含有薄膜の製造方法

Also Published As

Publication number Publication date
KR20070051309A (ko) 2007-05-17
US20080299312A1 (en) 2008-12-04
WO2006025515A1 (ja) 2006-03-09

Similar Documents

Publication Publication Date Title
JP2769307B2 (ja) 二酸化ケイ素の非常に低い温度の化学蒸着法
Ovanesyan et al. Low-temperature conformal atomic layer deposition of SiN x films using Si2Cl6 and NH3 plasma
EP0883698B1 (fr) PROCEDE DE FORMATION DE REVETEMENTS DE Ti1-xAlxN
TW200610765A (en) Raw material for forming thin film and method for producing the same
WO2006057709A3 (en) Method for deposition of metal layers from metal carbonyl precursors
WO2006083909A3 (en) Method of making substitutionally carbon-highly doped crystalline si-layers by cvd
WO2010043716A3 (fr) Procede de croissance controlee de film de graphene
DE60230741D1 (de) Substrat mit photokatalytischer beschichtung
WO2007117797A3 (en) Method of forming a metal carbide or metal carbonitride film having improved adhesion
TW200743677A (en) Process for preparing a nano-carbon material
WO2005060632A3 (en) High-throughput ex-situ method for rare-earth-barium-copper-oxide (rebco) film growth
DE602005002635D1 (de) Verfahren zur abscheidung von galliumoxidbeschichtungen auf flachglas
TW200615393A (en) Raw material liquid for metal organic chemical vapor deposition and method of producing hf-si containing complex oxide film using the raw material liquid
TW200540291A (en) Precursors for deposition of silicon nitride, silicon oxynitride and metal silicon oxynitrides
CN108059484A (zh) 半导体晶体生长用石英坩埚镀氮化硼膜的方法
JP4265409B2 (ja) Ｓｉ−Ｓｉ結合を有する有機Ｓｉ含有化合物を用いたＳｉ含有薄膜の形成方法
CN108493105A (zh) 二氧化硅薄膜及其制备方法
WO2002046242A3 (en) Volatile organometallic complexes of lowered reactivity suitable for use in chemical vapor deposition of metal oxide films
WO2003048411A1 (en) Method for forming thin film, substrate having transparent electroconductive film and photoelectric conversion device using the substrate
MY147893A (en) Method of forming a zinc oxide coated article
TWI379017B (zh)
JPH06191891A (ja) ガラス物品の表面にバリヤー層を形成させる方法
WO2018166802A2 (de) Beschichtetes produkt und verfahren zur herstellung
CN107604440A (zh) 一种抑制石英容器对磷化铟熔体污染的方法
JP4107923B2 (ja) イットリウム含有複合酸化物薄膜の製造方法